FNE41060 [ONSEMI]

智能功率模块，600V，10A;


型号：	FNE41060
厂家：	ONSEMI
描述：	智能功率模块，600V，10A
文件：	总17页 (文件大小：1033K)
中文：	中文翻译
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September 2010

Motion-SPM

FNE41060

Smart Power Module

Features

General Description

It is an advanced motion-smart power module (Motion-SPM^TM

)

•

600V-10A 3-phase IGBT inverter bridge including control ICs

for gate driving and protection

that Fairchild has newly developed and designed to provide

very compact and high performance ac motor drives mainly tar-

geting low-power inverter-driven application like air conditioner

and washing machine. It combines optimized circuit protection

and drive matched to low-loss IGBTs. System reliability is fur-

ther enhanced by the integrated under-voltage lock-out protec-

tion, short-circuit protection, and temperature monitoring. The

high speed built-in HVIC provides opto-coupler-less single-sup-

ply IGBT gate driving capability that further reduce the overall

size of the inverter system design. Each phase current of

inverter can be monitored separately due to the divided nega-

tive dc terminals.

Easy PCB layout due to built-in bootstrap diode and V_Sout-

put

Divided negative dc-link terminals for inverter current sensing

applications

•

Single-grounded power supply due to built-in HVIC

Built-in thermistor for over-temperature monitoring

Isolation rating of 2000Vrms/min.

Applications

Additional Information

For further infomation, please see AN-9070 and FEB306-001 in

http://www.fairchildsemi.com

•

AC 100V ~ 253V three-phase inverter drive for small power

ac motor drives

•

Home appliances applications like air conditioner and wash-

ing machine

Figure 1.

FNE41060 Rev. C

www.fairchildsemi.com

Integrated Power Functions

•

600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

•

For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

•

For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

•

Fault signaling: Corresponding to UV (Low-side supply) and SC faults

Input interface: 3.3/5V CMOS compatible, Schmitt trigger input

Pin Configuration

Top View

Figure 2.

www.fairchildsemi.com

FNE41060 Rev. C

Pin Descriptions

Pin Number

Pin Name

Pin Description

N.C.

No Connection

Positive DC–Link Input

Output for U Phase

Output for V Phase

Output for W Phase

N_U

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

N_V

N_W

Negative DC–Link Input for W Phase

C_SC

Capacitor (Low-pass Filter) for Short-Current Detection Input

Fault Output

V_FO

IN_(WL)

IN_(VL)

IN_(UL)

COM

V_CC(L)

V_CC(H)

IN_(WH)

IN_(VH)

IN_(UH)

V_S(W)

V_B(W)

V_S(V)

V_B(V)

V_S(U)

V_B(U)

Signal Input for Low-side W Phase

Signal Input for Low-side V Phase

Signal Input for Low-side U Phase

Common Supply Ground

Low-Side Common Bias Voltage for IC and IGBTs Driving

High-Side Common Bias Voltage for IC and IGBTs Driving

Signal Input for High-side W Phase

Signal Input for High-side V Phase

Signal Input for High-side U Phase

High-side Bias Voltage Ground for W Phase IGBT Driving

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

High-side Bias Voltage for U Phase IGBT Driving

www.fairchildsemi.com

FNE41060 Rev. C

Internal Equivalent Circuit and Input/Output Pins

N.C. (1)

N.C. (2)

P (3)

(26) V_B(U)

UVB

(25) V_S(U)

UVS

OUT(UH)

(24) V_B(V)

U(4)

UVS

VVB

VVS

(23) V_S(V)

(22) V_B(W)

(21) V_S(W)

WVB

WVS

OUT(VH)

VVS

(20) IN_(UH)

(19) IN_(VH)

IN(UH)

IN(VH)

IN(WH)

VCC

V (5)

(18) IN_(WH)

(17) V_CC(H)

OUT(WH)

WVS

COM

W(6)

(16) V_CC(L)

(15) COM

VCC

OUT(UL)

OUT(VL)

COM

N_U(7)

N_V(8)

N_W(9)

(14) IN_(UL)

(13) IN_(VL)

IN(UL)

IN(VL)

IN(WL)

(12) IN_(WL)

(11) V_FO

VFO

(10) C_SC

C(SC)

OUT(WL)

Note:

1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.

2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.

3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

Figure 3.

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FNE41060 Rev. C

Absolute Maximum Ratings (T_J= 25°C, Unless Otherwise Specified)

Inverter Part

Symbol

V_PN

Parameter

Conditions

Applied between P- N_U, N_V, N_W

Rating

Units

Supply Voltage

450

500

600

V_PN(Surge)

V_CES

I_O,25

Supply Voltage (Surge)

Collector-emitter Voltage

Output Phase Current

T_C= 25°C, T_J＜ 150°C (Note 1)

T_C= 100°C, T_J＜ 150°C (Note 1)

T_C= 25°C, T_J＜ 150°C, Under 1ms Pulse Width

T_C= 25°C per One Chip

I_O,100

I_pk

Output Phase Current

Output Peak Phase Current

Collector Dissipation

P_C

°C

T_J

Operating Junction Temperature

(Note 2)

-40 ~ 150

Note:

1. Sinusoidal PWM at V =300V, V =V =15V, T ＜ 150°℃, F =20kHz, MI=0.9, PF=0.8

2. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.

Control Part

Symbol

V_CC

Parameter

Conditions

Rating

Units

Control Supply Voltage

Applied between V_CC(H), V_CC(L)- COM

V_BS

High-side Control Bias

Voltage

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V)

V_B(W)- V_S(W)

V_IN

Input Signal Voltage

Applied between IN_(UH), IN_(VH), IN_(WH), IN_(UL)

IN_(VL), IN_(WL)- COM

-0.3~V_CC+0.3

V_FO

I_FO

Fault Output Supply Voltage

Fault Output Current

Applied between V_FO- COM

Sink Current at V_FOPin

-0.3~V_CC+0.3

V_SC

Current Sensing Input Voltage

Applied between C_SC- COM

-0.3~V_CC+0.3

Bootstrap Diode Part

Symbol

Parameter

Conditions

Rating

600

Units

V_RRM

I_F

Maximum Repetitive Reverse Voltage

Forward Current

T_C= 25°C

0.5

I_FP

T_J

Forward Current (Peak)

T_C= 25°C, Under 1ms Pulse Width

Operating Junction Temperature

-40 ~ 150

°C

Total System

Symbol

Parameter

Conditions

Rating

Units

V_PN(PROT)Self Protection Supply Voltage Limit

(Short Circuit Protection Capability)

V_CC= V_BS= 13.5 ~ 16.5V

T_J= 150°C, Non-repetitive, less than 2ms

400

T_STG

V_ISO

Storage Temperature

Isolation Voltage

-40 ~ 125

2000

°C

60Hz, Sinusoidal, AC 1 minute, Connection

Pins to heat sink plate

V_rms

Thermal Resistance

Symbol

Parameter

Conditions

Min. Typ. Max. Units

R_th(j-c)Q

R_th(j-c)F

Junction to Case Thermal

Resistance

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

3.8

4.8

°C/W

Note:

3. For the measurement point of case temperature(T ), please refer to Figure 2.

www.fairchildsemi.com

FNE41060 Rev. C

Electrical Characteristics (T_J= 25°C, Unless Otherwise Specified)

Inverter Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

V_CE(SAT)

Collector-Emitter Saturation V_CC= V_BS= 15V

I_C= 5A, T_J= 25°C

1.5

2.0

Voltage

V_IN= 5V

V_F

FWD Forward Voltage

Switching Times

V_IN= 0V

I_F= 5A, T_J= 25°C

1.5

0.75

0.20

0.70

0.15

0.65

0.15

0.65

0.15

2.0

1.25

0.45

1.20

0.40

t_ON

t_C(ON)

t_OFF

t_C(OFF)

t_rr

V_PN= 300V, V_CC= V_BS= 15V, I_C= 5A

T_J= 25°C

V_IN= 0V « 5V, Inductive Load

(Note 4)

0.45

t_ON

V_PN= 300V, V_CC= V_BS= 15V, I_C= 5A

T_J= 25°C

V_IN= 0V « 5V, Inductive Load

(Note 4)

0.35

1.15

0.40

1.15

0.40

t_C(ON)

t_OFF

t_C(OFF)

t_rr

I_CES

Collector-Emitter

Leakage Current

V_CE= V_CES

Note:

and t

include the propagation delay time of the internal drive IC. t

and t

are the switching time of IGBT itself under the given gate driving condition internally.

C(OFF)

OFF

C(ON)

For the detailed information, please see Figure 4.

100% I_C100% I_C

t_rr

V_CE

I_C

V_CE

V_IN

t_ON

t_OFF

t_C(ON)

t_C(OFF)

10% I_C

V_IN(ON)

V_IN(OFF)

10% V_CE

10% I_C

10% V_CE

90% I_C

(b) turn-off

(a) turn-on

Figure 4. Switching Time Definition

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FNE41060 Rev. C

Switching Loss (Typical)

Inductive Load, V_PN=300V, V_CC=15V, T_J=25℃

Inductive Load, V_PN=300V, V_CC=15V, T_J=150℃

400

350

300

250

200

150

100

400

350

300

250

200

150

100

IGBTTurn-ON, E_on

IGBTTurn-OFF, E_off

IGBTTurn-ON, E_on

IGBTTurn-OFF, E_off

FRDTurn-OFF, E

rec

FRDTurn-OFF, E

rec

COLLECTOR CURRENT, I_c[AMPERES]

Figure 5. Switching Loss Characteristics

Control Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

I_QCCH

I_QCCL

I_PCCH

Quiescent V_CCSupply V_CC(H)= 15V, IN_(UH,VH,WH)= 0V

V_CC(H)- COM

V_CC(L)- COM

0.10

2.65

0.15

Current

V_CC(L)= 15V, IN_{(UL,VL, WL)}= 0V

Operating V_CCSupply V_CC(H)

= 15V, f_PWM= 20kHz, V_CC(H)- COM

Current

duty=50%, applied to one PWM

signal input for High-side

I_PCCL

V_CC(L)

15V, f_PWM

20kHz, V_CC(L)- COM

3.65

duty=50%, applied to one PWM

signal input for Low-side

I_QBS

I_PBS

Quiescent V_BSSupply V_BS= 15V, IN_{(UH, VH, WH)}= 0V

Current

V_B(U)- V_S(U), V_B(V)

V_S(V), V_B(W)- V_S(W)

0.30

2.00

Operating V_BSSupply V_CC= V_BS= 15V, f_PWM= 20kHz, V_B(U)- V_S(U), V_B(V)

Current

duty=50%, applied to one PWM V_S(V), V_B(W)- V_S(W)

signal input for High-side

V_FOH

V_FOL

Fault Output Voltage

V_SC= 0V, V_FOCircuit: 4.7kW to 5V Pull-up

V_SC= 1V, V_FOCircuit: 4.7kW to 5V Pull-up

4.5

0.5

0.55

13.0

13.5

12.5

13.0

V_SC(ref)Short Circuit Trip Level V_CC= 15V (Note 5)

0.45

10.5

11.0

10.0

10.5

0.5

UV_CCD

UV_CCR

UV_BSD

UV_BSR

t_FOD

Detection Level

Reset Level

Supply Circuit

Under-Voltage

Protection

Detection Level

Reset Level

Fault-out Pulse Width

V_IN(ON)ON Threshold Voltage Applied between IN_(UH), IN_(VH), IN_(WH), IN_(UL), IN_(VL)

2.6

IN_(WL)- COM

V_IN(OFF)OFF Threshold Voltage

0.8

Note:

5. Short-circuit current protection is functioning only at the low-sides.

www.fairchildsemi.com

FNE41060 Rev. C

Bootstrap Diode Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

V_F

t_rr

Forward Voltage

I_F= 0.1A, T_C= 25°C

2.5

Reverse Recovery Time

Built in Bootstrap Diode V_F-I_FCharacteristic

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

T_C=25℃

10 11 12 13 14 15

V_F[V]

Note:

6. Built in bootstrap diode includes around 15Ωresistance characteristic.

Figure 6. Built in Bootstrap Diode Characteristic

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FNE41060 Rev. C

Recommended Operating Conditions

Value

Symbol

Parameter

Conditions

Units

Min. Typ. Max.

V_PN

V_CC

V_BS

Supply Voltage

Applied between P - N_U, N_V, N_W

300

400

16.5

18.5

Control Supply Voltage

High-side Bias Voltage

Applied between V_CC(H), V_CC(L)-COM

Applied between V_B(U)-V_S(U), V_B(V)-V_S(V),V_B(W)-V_S(W)

13.5

13.0

-1

dV_CC/dt, Control supply variation

dV_BS/dt

V/ms

t_dead

Blanking Time for

Preventing Arm-short

For Each Input Signal

1.5

f_PWM

V_SEN

PWM Input Signal

-40°C ＜ T_J＜ 150°C

kHz

Voltage for Current

Sensing

Applied between N_U, N_V, N_W- COM

(Including surge voltage)

-4

P_WIN(ON)Minimun Input Pulse

(Note 7)

0.5

Width

P_WIN(OFF)

Note:

7. SPM might not make response if input pulse width is less than the recommanded value.

Allowable Maximum Output Current

f_SW=5kHz

f_SW=15kHz

V_DC=300V, V_CC=V_BS=15V

T ＜ 150℃ , T ≤ 125℃

M.I.=0.9, P.F.=0.8

Sinusoidal PWM

90 100 110 120 130 140

Case Temperature, T_C[℃]

Note:

8. The allowable output current value may be different from the actual application.

Figure 7. Allowable Maximum Output Current

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FNE41060

SPM26-AAA

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FNE41060 Rev. C

Mechanical Characteristics and Ratings

Limits

Parameter

Conditions

Units

Min.

Typ.

Max.

+120

0.8

Device Flatness

Note Figure 8

N•m

kg•cm

Mounting Torque

Mounting Screw: - M3

Recommended 0.7N•m

Recommended 7.1kg•cm

0.6

6.2

0.7

7.1

8.1

Note Figure 9

Weight

Figure 8. Flatness Measurement Position

Pre - Screwing : 1→2

Final Screwing : 2→1

Note:

9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.

10. Avoid one side tightening stress. Fig.9 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged.

The Pre-Screwing torque is set to 20~30% of maximum torque rating.

Figure 9. Mounting Screws Torque Order

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FNE41060 Rev. C

Time Charts of SPMs Protective Function

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_CCR

UV_CCD

Control

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UV_CCR, the circuits start to operate when next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UV_CCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UV_CCR).

a7 : Normal operation: IGBT ON and carrying current.

Figure 10. Under-Voltage Protection (Low-side)

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_BSR

Control

Supply Voltage

UV_BSD

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UV_BSR, the circuits start to operate when next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UV_BSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UV_BSR

)

b6 : Normal operation: IGBT ON and carrying current

Figure 11. Under-Voltage Protection (High-side)

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FNE41060 Rev. C

Lower arms

control input

Protection

Circuit state

SET

RESET

Internal IGBT

Gate-Emitter Voltage

Output Current

SC Reference Voltage

Sensing Voltage

of the shunt

resistance

CR circuit time

constant delay

Fault Output Signal

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Input “L” : IGBT OFF state.

c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c7 : IGBT OFF state

Figure 12. Short-Circuit Current Protection (Low-side Operation only)

Input/Output Interface Circuit

5V-Line (MCU or Control power)

R_PF=10kΩ

SPM

IN_(UH)IN_(VH)

IN_(WH)

IN_(UL)IN_(VL)

IN_(WL)

MCU

V_FO

COM

Note:

1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s

printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig-

nal voltage drop at input terminal.

2) The logic input is compatible with standard CMOS outputs.

Figure 13. Recommended CPU I/O Interface Circuit

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FNE41060 Rev. C

HVIC

VB(U)

(26) V_B(U)

P (3)

U (4)

C_BS

C_BSC

(25) V_S(U)

(20) IN_(UH)

VS(U)

OUT(UH)

VS(U)

R_S

IN(UH)

VB(V)

Gating UH

Gating VH

Gating WH

(24) V_B(V)

C_BSC

(23) V_S(V)

(19) IN_(VH)

VS(V)

R_S

OUT(VH)

VS(V)

IN(VH)

V (5)

(22) V_B(W)

(21) V_S(W)

VB(W)

VS(W)

C_BSC

R_S

(18) IN_(WH)

(17) V_CC(H)

IN(WH)

VCC

C_DCS

V_DC

OUT(WH)

VS(W)

15V line

W (6)

C_PS

C_SPC15

C_SP15

(15) COM

(16) V_CC(L)

COM

5V line

LVIC

VCC

VFO

OUT(UL)

OUT(VL)

OUT(WL)

R_PF

R_SU

N_U(7)

N_V(8)

N_W(9)

C_SPC05

C_SP05

R_S

(11) V_FO

Fault

C_PF

C_BPF

R_S

(14) IN_(UL)

(13) IN_(VL)

(12) IN_(WL)

R_SV

Gating UL

Gating VL

Gating WL

IN(UL)

IN(VL)

R_S

IN(WL)

COM

CSC

C_SC

(10) C_SC

(1) N.C.

(2) N.C.

C_PSC_PSC_PS

R_SW

R_F

U-Phase Current

V-Phase Current

W-Phase Current

Input Signal for

Short-Circuit Protection

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3) V output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I up to 1mA. Please refer

to Figure14.

4) C

of around 7 times larger than bootstrap capacitor C is recommended.

SP15

5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention

of input signal oscillation. R C time constant should be selected in the range 50~150ns. (Recommended R =100Ω, C =1nF)

6) To prevent errors of the protection function, the wiring around R and C should be as short as possible.

7) In the short-circuit protection circuit, please select the R C time constant in the range 1.5~2ms.

8) Each capacitor should be mounted as close to the pins of the SPM as possible.

9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive

capacitor of around 0.1~0.22mF between the P&GND pins is recommended.

10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W)

12) Please choose the electrolytic capacitor with good temperature characteristic in C . Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and

frequency characteristics in C

BSC

13) For the detailed information, please refer to the AN-9070 and FEB306-001.

Figure 14. Typical Application Circuit

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FNE41060 Rev. C

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FNE41060 Rev. C

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Rev. I38

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FNE41060 [ONSEMI]

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