FOD050LR2 [ONSEMI]

SO-8L,1 Mbit/s,LVTTL/LVCMOS 3.3 V 高速晶体管光耦合器;
FOD050LR2
型号: FOD050LR2
厂家: ONSEMI    ONSEMI
描述:

SO-8L,1 Mbit/s,LVTTL/LVCMOS 3.3 V 高速晶体管光耦合器

局域网 输出元件 晶体管 光电
文件: 总12页 (文件大小:304K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
3.3 V and 5 V High Speed  
Transistor Optocouplers  
FOD050L, FOD053L  
Description  
SOIC8  
CASE 751DZ  
The FOD050L and FOD053L optocouplers consist of an AlGaAs  
LED optically coupled to a high speed photodetector transistor. These  
devices are specified for operation at 3.3 V and 5 V supply voltages.  
A separate connection for the bias of the photodiode improves the  
speed by several orders of magnitude over conventional  
phototransistor optocouplers by reducing the basecollector  
capacitance of the input transistor.  
MARKING DIAGRAM  
1
2
6
ON  
X
50L  
YY  
An internal noise shield provides superior common mode rejection  
of CM = 50 kV/ms (typical) and CM = 35 kV/ms (typical).  
H
L
V
S
Features  
Low Power Consumption  
High Speed  
5
3
4
Available in SingleChannel 8Pin SOIC (FOD050L) or  
DualChannel 8Pin SOIC (FOD053L)  
1.  
2.  
3.  
ON = onsemi Logo  
50L = Device Number (50L or 53L)  
= DIN EN/IEC6074755 Option  
(only appears on component with this option  
V
Superior CMR CM = 50 kV/ms (typical) and CM = 35 kV/ms  
H
L
(typical)  
4.  
5.  
X
YY  
= OneDigit Year Code, e.g. ‘5’  
= Two Digit Work Week, Ranging  
from ‘01’ to ‘53’  
Guaranteed Performance over Temperature: 0°C to 70°C  
Safety and Regulatory Approvals:  
6.  
S
= Assembly Package Code  
UL1577, 2,500 VAC  
for 1 Minute  
RMS  
DINEN/IEC6074755, 565 V Peak Working Insulation  
Voltage  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 10 of  
this data sheet.  
Applications  
Line Receivers  
Pulse Transformer Replacement  
HighSpeed Logic Ground Isolation: LVTTL/LVCMOS  
Wide Bandwidth Analog Coupling  
TRUTH TABLE  
LED  
On  
V
O
LOW  
HIGH  
Off  
© Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
March, 2022 Rev. 6  
FOD053L/D  
FOD050L, FOD053L  
Schematics  
VCC  
+
VCC  
1
8
1
8
N/C  
VF1  
_
V01  
VB  
+
2
7
6
5
2
3
4
7
6
5
VF  
_
_
V02  
3
VO  
VF2  
GND  
N/C  
GND  
+
4
FOD053L  
FOD050L  
Figure 1. Schematics  
SAFETY AND INSULATION RATINGS  
As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with  
the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
Installation Classification per DIN VDE 0110/1.89 Table 1,  
For Rated Mains Voltage  
< 150 V  
< 300 V  
IIV  
IIII  
RMS  
RMS  
Climatic Classification  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Value  
Unit  
V
PR  
InputtoOutput Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test  
with tm = 10 s, Partial Discharge < 5 pC  
904  
Vpeak  
InputtoOutput Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test  
with tm = 1 s, Partial Discharge < 5 pC  
1060  
Vpeak  
Vpeak  
Vpeak  
mm  
mm  
mm  
°C  
Maximum Working Insulation Voltage  
Highest Allowable OverVoltage  
External Creepage  
565  
4000  
4  
V
IORM  
V
IOTM  
4  
External Clearance  
0.4  
150  
200  
DTI  
TS  
Distance Through Insulation (Insulation Thickness)  
Case Temperature (Note 1)  
Input Current (Note 1)  
mA  
I
S,INPUT  
Output Power (Note 1)  
300  
mW  
W
P
S,OUTPUT  
Insulation Resistance at TS, VIO = 500 V (Note 1)  
> 109  
R
IO  
1. Safety limit values – maximum values allowed in the event of a failure.  
www.onsemi.com  
2
 
FOD050L, FOD053L  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Value  
40 to +125  
Unit  
°C  
T
STG  
Storage Temperature  
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
40 to +85  
°C  
T
OPR  
T
J
40 to +125  
°C  
260 for 10 seconds  
°C  
T
SOL  
EMITTER  
IF (avg)  
DC/Average Forward Input Current  
Each Channel  
Each Channel  
25  
50  
mA  
mA  
Peak Forward Input Current (50% duty cycle, 1 ms P.W.)  
IF (pk)  
Peak Transient Input Current (1 ms P.W., 300 pps)  
IF (trans)  
VR  
Each Channel  
Each Channel  
1.0  
5
A
V
Reverse Input Voltage  
Input Power Dissipation (No derating required up to 85°C)  
PD  
DETECTOR  
IO (avg)  
Each Channel  
45  
mW  
Average Output Current  
Peak Output Current  
Each Channel  
Each Channel  
FOD050L only  
8
16  
5
mA  
mA  
V
IO (pk)  
EmitterBase Reverse Voltage  
V
EBR  
Supply Voltage  
0.5 to 7  
0.5 to 7  
5
V
V
V
CC  
VO  
IB  
Output Voltage  
Base Current  
FOD050L only  
Each Channel  
mA  
Output Power Dissipation (No derating required up to 85°C)  
PD  
100  
mW  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
www.onsemi.com  
3
FOD050L, FOD053L  
ELECTRICAL CHARACTERISTICS  
(T = 0°C to 70°C, unless otherwise specified.)  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Symbol  
Parameter  
Test Conditions  
Device  
Min.  
Typ.  
Max.  
Unit  
EMITTER  
IF = 16 mA, TA = 25°C  
1.45  
1.7  
1.8  
VF  
Input Forward Voltage  
All  
All  
V
V
IF = 16 mA  
Input Reverse Breakdown  
Voltage  
IR = 10 mA  
5.0  
B
VR  
DETECTOR  
IF = 0 mA, VO = VCC = 3.3 V & 5 V,  
TA = 25°C  
Logic High Output Current  
Logic Low Supply Current  
All  
0.001  
1
mA  
mA  
I
OH  
I
CCL  
IF = 16 mA, VO = Open, VCC = 3.3 V & 5 V  
FOD050L  
FOD053L  
200  
400  
IF1 = IF2 = 16 mA, VO = Open, VCC = 3.3 V  
& 5 V  
Logic High Supply Current  
mA  
I
IF = 0 mA, VO = Open, VCC = 3.3 V & 5 V,  
TA = 25°C  
CCH  
FOD050L  
FOD053L  
0.3  
10  
IF = 0 mA, VO = Open, VCC = 3.3 V & 5 V  
TRANSFER CHARACTERISTICS  
Symbol  
COUPLED  
CTR  
Parameter  
Test Conditions  
Device  
Min.  
Typ.  
Max.  
Unit  
%
V
Current Transfer Ratio  
(Note 2)  
IF = 16 mA, VO = 0.4 V, VCC = 3.3 V & 5 V,  
15  
All  
All  
50  
TA = 25°C  
Logic Low Output Voltage  
V
OL  
IF = 16 mA, IO = 3 mA, VCC = 3.3 V & 5 V,  
0.3  
TA = 25°C  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Current Transfer Ratio is defined as a ratio of output collector current, IO, to the forward LED input current, IF, times 100%.  
www.onsemi.com  
4
 
FOD050L, FOD053L  
ELECTRICAL CHARACTERISTICS (Continued)  
(T = 0°C to 70°C, unless otherwise specified.)  
A
SWITCHING CHARACTERISTICS (V = 3.3 V & 5 V)  
CC  
Symbol  
Parameter  
Test Conditions  
RL = 1.9 kW, IF = 16 mA (Note 3)  
(Figure 10)  
Min.  
Typ.  
Max.  
1.0  
Unit  
25°C  
25°C  
Propagation Delay Time to  
Logic LOW  
T
ms  
PHL  
PLH  
2.0  
RL = 1.9 kW, IF = 16 mA (Note 3)  
(Figure 10)  
1.0  
T
Propagation Delay Time to  
Logic HIGH  
ms  
2.0  
|CMH|  
|CML|  
Common Mode Transient  
Immunity at Logic HIGH  
IF = 0 mA, VCM = 1,000 VPP, RL = 4.1 kW, TA = 25°C  
5,000  
5,000  
5,000  
5,000  
50,000  
50,000  
35,000  
35,000  
V/ms  
V/ms  
V/ms  
V/ms  
(Notes 4, 5) (Figure 11)  
IF = 0 mA, VCM = 1,000 VPP, RL = 1.9 kW, TA = 25°C  
(Notes 3, 5) (Figure 11)  
Common Mode Transient  
Immunity at Logic LOW  
IF = 16 mA, VCM = 1,000VPP, RL = 4.1 kW, TA = 25°C  
(Notes 4, 5) (Figure 11)  
IF = 16 mA, VCM = 1,000 VPP, RL = 1.9 kW, TA = 25°C  
(Notes 3, 5) (Figure 11)  
ISOLATION CHARACTERISTICS  
Symbol  
Characteristics  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Relative humidity = 45%, TA = 25°C,  
t = 5 s, VIO = 3000 VDC (Note 6)  
InputOutput Insulation Leakage Current  
1.0  
mA  
I
IO  
Withstand Insulation Test Voltage  
f = 60 Hz, TA = 25°C, t = 60 s (Note 6)  
VIO = 500 VDC (Note 6)  
f = 1 MHz (Note 6)  
2500  
V
V
RMS  
ISO  
11  
12  
10  
10  
W
Resistance (Input to Output)  
Capacitance (Input to Output)  
R
C
IO  
IO  
0.2  
pF  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. The 1.9 kW load represents 1 TTL unit load of 1.6 mA and 5.6 kΩ pullup resistor.  
4. The 4.1 kW load represents 1 LSTTL unit load of 0.36 mA and 6.1 kΩ pullup resistor.  
5. Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm / dt on the leading edge of the common mode  
pulse signal VCM, to assure that the output will remain in a logic high state (i.e., VO > 2.0 V). Common mode transient immunity in logic low  
level is the maximum tolerable (negative) dVcm / dt on the trailing edge of the common mode pulse signal, VCM, to assure that the output will  
remain in a logic low state (i.e., VO < 0.8 V).  
6. Device is considered a two terminal device: pins 1, 2, 3 and 4 are shorted together and pins 5, 6, 7 and 8 are shorted together.  
www.onsemi.com  
5
 
FOD050L, FOD053L  
TYPICAL PERFORMANCE CURVES  
1.3  
100  
10  
V
V
= 0.4 V  
Normalized to  
O
I
= 16 mA, T = 25_C  
= 3.3 V & 5 V  
F
A
CC  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
T
= 70_C  
A
T
= 85_C  
A
T
A
= 85_C  
T
= 70_C  
T
A
= 40_C  
A
A
T
= 25_C  
A
1
T
= 25_C  
A
T
= 0_C  
A
T
= 0_C  
0.1  
0.01  
0.001  
T
= 40_C  
A
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
1.7  
0
5
10  
15  
20  
25  
I
– FORWARD CURRENT (mA)  
V
– FORWARD VOLTAGE (V)  
F
F
Figure 2. LED Forward Current vs. Forward Voltage  
Figure 3. Current Transfer Ratio vs. Forward  
Current  
1.6  
12  
I
V
V
=16 mA  
T
V
=25 _C  
=
3.3 V & 5 V  
CC  
F
A
NormalizedtoT  
=25 _C  
A
=0.4 V  
O
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
3.3  
=
V & 5 V  
CC  
10  
8
I
=25 mA  
F
20 mA  
15 mA  
10 mA  
5 mA  
6
4
2
0
0.0  
40  
20  
0
20  
40  
60  
80  
100  
0
2
4
6
8
10  
12  
14  
16  
V
– OUTPUT VOLTAGE (V)  
T
– AMBIENT TEMPERATURE (_C)  
O
A
Figure 4. Current Transfer Ratio vs. Ambient  
Temperature  
Figure 5. Output Current vs. Output Voltage  
120  
100  
80  
60  
40  
20  
0
10  
T
A
=25 _C  
V
I
=
=
V
0
=
3.3 V & 5 V  
CC  
O
F
V
= 3.3 V & 5 V  
CC  
1
0.1  
0.01  
40  
20  
0
20  
40  
60  
80  
100  
0
2
4
6
8
10  
12  
14  
16  
I
– INPUT FORWARD CURRENT (mA)  
T
– AMBIENT TEMPERATURE (_C)  
F
A
Figure 6. Logic High Output Current vs. Ambient  
Temperature  
Figure 7. Supply Current vs. Input Forward Current  
www.onsemi.com  
6
FOD050L, FOD053L  
TYPICAL PERFORMANCE CURVES (Continued)  
10  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.3 V  
& 5 V  
V
I
=
3.3 V  
&5 V  
V
T
=
CC  
CC  
=25 _C  
=16 mA  
A
F
t
,R =4.1k W  
L
PLH  
t
,I =16 mA  
F
PLH  
t
t
,I =10 mA  
F
PLH  
1
,I =10 mA  
F
PHL  
t
,R =1.9 k W  
,R  
PLH  
L
t
,I =16 mA  
F
PHL  
t
,R =1.9 kW & 4.1 kW  
L
PHL  
0.1  
2
L
3
5
1
10  
40  
20  
0
20  
40  
60  
80  
100  
T
– AMBIENT TEMPERATURE (_C)  
R
– LOAD RESISTANCE (kW)  
A
Figure 8. Propagation Delay vs. Ambient Temperature  
Figure 9. Propagation Delay vs. Load Resistance  
www.onsemi.com  
7
FOD050L, FOD053L  
TEST CIRCUITS  
Noise  
Shield  
Noise  
Shield  
Pulse  
+
VCC  
IF  
VCC  
V01  
Generator  
+3.3 V  
+3.3 V  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
tr = 5ns  
ZO = 50  
Pulse  
W
RL  
Generator  
tr = 5ns  
ZO= 50 W  
VF1  
IF  
+
VB  
10% DUTY CYCLE  
VO  
RL  
I/f < 100 mS  
10% D.C.  
I/f < 100 ms  
VF  
CL = 1.5 pF  
VO  
V02  
VO  
IF  
VF2  
+
0.1 mF  
MONITOR  
0.1 mF  
IF Monitor  
GND  
Rm  
Rm  
CL = 1.5 pF  
GND  
Test Circuit for FOD050L  
Test Circuit for FOD053L  
IF  
0
3.3 V  
VO  
50%  
50%  
VOL  
TPHL  
TPLH  
Figure 10. Switching Time Test Circuit  
IF  
Noise  
Shield  
Noise  
Shield  
VCC  
VCC  
V01  
+
+3.3 V  
+3.3 V  
VO  
1
2
3
4
8
1
2
3
4
8
7
6
5
IF  
RL  
VF1  
+
VB  
RL  
7
6
5
A
VF  
A
VO  
V02  
B
0.1 mF  
VO  
0.1 mF  
B
VFF  
VF2  
+
VFF  
GND  
GND  
VCM  
Pulse Gen  
+  
VCM  
+−  
Pulse Gen  
Test Circuit for FOD050L  
Test Circuit for FOD053L  
VCM 1000 V  
0 V  
90% 90%  
10%  
tr  
10%  
tf  
VO  
3.3 V  
VOL  
Switch at A : IF = 0 mA  
VO  
Switch at A : IF = 16 mA  
Figure 11. Common Mode Immunity Test Circuit  
www.onsemi.com  
8
FOD050L, FOD053L  
REFLOW PROFILE  
Max. Rampup Rate = 3°C/s  
Max. Rampdown Rate = 6°C/s  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
Tsmax  
t
L
Preheat Area  
Tsmin  
t
s
60  
40  
20  
0
120  
240  
360  
Time 25°C to Peak  
Time (s)  
Figure 12. Reflow Profile  
Profile Freature  
Temperature Minimum (Tsmin)  
Temperature Maximum (Tsmax)  
Time (t ) from (Tsmin to Tsmax)  
PbFree Assembly Profile  
150°C  
200°C  
60 120 s  
S
Rampup Rate (t to t )  
3°C/s max.  
217°C  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60 150 s  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
260°C + 0°C / 5°C  
30 s  
P
Rampdown Rate (T to T )  
6°C/s max.  
8 minutes max.  
P
L
Time 25°C to Peak Temperature  
www.onsemi.com  
9
FOD050L, FOD053L  
ORDERING INFORMATION  
Part Number (Note 7)  
FOD050L  
Package  
Packing Method  
SOIC8 (PbFree)  
Tube (50 Units per Tube)  
FOD050LR2  
SOIC8 (PbFree)  
Tape and Reel (1000 Units per Reel)  
Tube (50 Units per Tube)  
FOD050LV  
SOIC8 (PbFree), DIN EN/IEC6074755 Option  
SOIC8 (PbFree), DIN EN/IEC6074755 Option  
FOD050LR2V  
Tape and Reel (1000 Units per Reel)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
7. The product orderable part number system listed in this table also applies to the FOD053L product.  
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.  
www.onsemi.com  
10  
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC8  
CASE 751DZ  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13733G  
SOIC8  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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FAIRCHILD

FOD050LSD

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050LSDV

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050LSV

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050LT

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050LTV

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050LV

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050L_06

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050L_08

LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD050L_09

FOD050L, FOD250L: Single Channel FOD053L: Dual Channel LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers
FAIRCHILD

FOD053L

HIGH SPEED TRANSISTOR OPTOCOUPLERS
FAIRCHILD