FOD073L [ONSEMI]
双通道低输入电流高增益分离式达灵顿光耦合器;
| 型号： | FOD073L |
| 厂家： | 
ONSEMI |
| 描述： | 双通道低输入电流高增益分离式达灵顿光耦合器 局域网 输出元件 光电 |
| 文件： | 总13页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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April 2009
FOD073L
LVTTL/LVCMOS Compatible Low Input Current
High Gain Split Darlington Optocoupler
Features
Description
■ Low power consumption
■ Low input current: 0.5mA
■ Dual channel 8-pin SOIC package
■ High CTR: 400% minimum
■ High CMR: 10kV/µs
The FOD073L optocoupler consists of an AlGaAs LED
optically coupled to a high gain split darlington photo-
detector. This device is specified to operate at a 3.3V
supply voltage.
An integrated emitter – base resistor provides superior
stability over temperature.
■ Guaranteed performance over temperature
0°C to 70°C
The combination of a very low input current of 0.5mA
and a high current transfer ratio of 2000% (typical)
makes this device particularly useful for input interface to
MOS, CMOS, LSTTL and EIA RS232C, while output
compatibility is ensured to LVCMOS as well as high
fan-out LVTTL requirements.
■ U.L. recognized (File # E90700)
■ LVTTL/LVCMOS Compatible output
Applications
■ Digital logic ground isolation – LVTTL/LVCMOS
■ Telephone ring detector
An internal noise shield provides exceptional common
mode rejection of 10kV/µs.
■ EIA-RS-232C line receiver
■ High common mode noise line receiver
■ µP bus isolation
■ Current loop receiver
Schematic
Package Outline
VCC
+
1
8
VF1
_
V01
2
3
7
6
5
_
V02
Truth Table
VF2
LED
ON
V
O
LOW
GND
+
4
OFF
HIGH
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
Absolute Maximum Ratings (No derating required up to 85°C)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
°C
T
Storage Temperature
Operating Temperature
Lead Solder Temperature
-40 to +125
-40 to +85
STG
T
°C
OPR
T
260 for 10 sec
°C
SOL
(Wave solder only. See reflow profile for surface mount devices)
EMITTER
I (avg)
DC/Average Forward Input Current
Each Channel
20
40
mA
mA
F
I (pk)
Peak Forward Input Current
(50% duty cycle, 1ms P.W.)
Each Channel
F
I (trans)
Peak Transient Input Current (≤1µs P. W., 300 pps)
Reverse Input Voltage
Each Channel
Each Channel
Each Channel
1.0
5
A
V
F
V
P
R
D
Input Power Dissipation
35
mW
DETECTOR
(avg)
I
Average Output Current
Each Channel
60
0.5
mA
V
O
V
Emitter-Base Reverse Voltage (FOD070L, FOD270L) Each Channel
EB
V
, V
Supply Voltage, Output Voltage
Output power dissipation
Each Channel
Each Channel
-0.5 to 7
100
V
CC
O
P
mW
D
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
2
Electrical Characteristics (T = 0 to 70°C unless otherwise specified)
A
Individual Component Characteristics
Symbol Parameter
EMITTER
Test Conditions
Min.
Typ.*
Max.
Unit
V
V
Input Forward Voltage
T =25°C
1.35
1.7
F
A
I = 1.6mA (Each Channel)
1.75
F
BV
Input Reverse
T =25°C, I = 10µA
5.0
V
R
A
R
Breakdown Voltage
(Each Channel)
DETECTOR
I
Logic High Output Current
Logic Low Supply Current
Logic High Supply Current
I = 0 mA, V = V = 3.3V
(Each Channel)
0.05
0.8
25
3
µA
mA
µA
OH
F
O
CC
I
I
F1
= I = 1.6mA,
CCL
CCH
F2
V
= V = Open, V = 3.3V
O1
O2 CC
I
I
= I = 0mA,
0.01
2
F1
F2
V
= V = Open, V = 3.3V
O1
O2 CC
Transfer Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
CTR
COUPLED
I = 0.5mA, V = 0.4V, V = 3.3V
400
7000
%
F
O
CC
Current Transfer Ratio
(Note 1)
V
Logic Low Output Voltage
I = 1.6mA, I = 8mA, V = 3.3V
0.07
0.07
0.3
0.4
V
OL
F
O
CC
I = 5mA, I = 15mA, V = 3.3V
F
O
CC
Switching Characteristics (V = 3.3 V)
CC
Symbol Parameter
Test Conditions
Min.
Typ.*
Max. Unit
T
Propagation Delay
Time to Logic LOW
R = 4.7kΩ, I = 0.5mA
(Fig. 9)
5
30
µs
PHL
L
F
T
Propagation Delay
Time to Logic HIGH
R = 4.7kΩ, I = 0.5mA
(Fig. 9)
25
90
µs
PLH
L
F
|CM | Common Mode Transient I = 0 mA, |V | = 10 V , T = 25°C,
1,000
10,000
10,000
V/µs
V/µs
H
F
CM
P-P
A
Immunity at Logic HIGH R = 2.2kΩ (Note 2) (Fig. 10)
L
|CM | Common Mode Transient I = 1.6mA, |V | = 10 V , R = 2.2kΩ, 1,000
L
F
CM
P-P
L
Immunity at Logic LOW
T = 25°C (Note 2) (Fig. 10)
A
*All typicals at T = 25°C
A
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
3
Electrical Characteristics (Continued) (T = 0 to 70°C unless otherwise specified)
A
Isolation Characteristics
Symbol
Characteristics
Test Conditions
Min. Typ.* Max. Unit
I
Input-Output Insulation
Leakage Current
Relative humidity = 45%, T = 25°C,
1.0
µA
I-O
A
t = 5 s, V = 3000 VDC (Note 3)
I-O
V
Withstand Insulation Test
Voltage
R
≤ 50%, T = 25°C, I ≤ 2µA,
2500
V
RMS
ISO
H
A
I-O
t = 1 min. (Note 3)
12
R
C
I
Resistance (Input to Output)
V
= 500 VDC (Note 3)
10
Ω
I-O
I-O
I-I
I-O
Capacitance (Input to Output) f = 1 MHz (Notes 3, 4)
0.7
pF
µA
Input-Input Insulation
Leakage Current
RH ≤ 45%, V = 500 VDC (Note 5)
0.005
I-I
11
R
Input-Input Resistance
Input-Input Capacitance
V
= 500 VDC (Note 5)
10
Ω
I-I
I-I
C
f = 1 MHz (Note 5)
0.03
pF
I-I
*All typicals at T = 25°C
A
Notes:
1. Current Transfer Ratio is defined as a ratio of output collector current, I , to the forward LED input current, I , times
O
F
100%.
2. Common mode transient immunity in logic high level is the maximum tolerable (positive) dV /dt on the leading
CM
edge of the common mode pulse signal, V , to assure that the output will remain in a logic high state
CM
(i.e., V > 2.0V). Common mode transient immunity in logic low level is the maximum tolerable (negative) dV /dt
O
CM
on the trailing edge of the common mode pulse signal, V , to assure that the output will remain in a logic low state
CM
(i.e., V <0.8 V).
O
3. Device is considered a two terminal device: Pins 1, 2, 3 and 4 are shorted together and Pins 5, 6, 7 and 8 are
shorted together.
4. CI-O is measured by shorting pins 1 and 2 or pins 3 and 4 together and pins 5 through 8 shorted together.
5. Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 2 Current Transfer Ratio vs. Input Forward Current
Fig. 1 Input Forward Current vs Forward Voltage
100
10
3500
3000
V
V
= 0.4V
O
= 3.3V
CC
T
= 85°C
A
T
= 25°C
A
T
= 85°C
A
T
= 70°C
= 25°C
A
2500
2000
1500
T
A
T
= -40°C
A
T
= 70°C
A
1
T
= 25°C
A
T
= 0°C
A
T
= 0°C
A
0.1
1000
500
0
T
= -40°C
A
0.01
0.001
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0.1
1
10
VF - FORWARD VOLTAGE (V)
IF - FORWARD CURRENT (mA)
Fig. 3 DC Transfer Characterstics
Fig. 4 Supply Current vs Input Forward Current
10
140
120
100
80
T
V
= 25°C
T
= 25°C
A
A
= 3.3V
V
= 3.3V
CC
CC
I
= 5mA
F
I
= 4.5mA
F
4mA
1
3.5mA
3mA
2.5mA
60
40
20
0
2mA
1.5mA
1mA
0.1
0.5mA
0.01
0.1
0.0
0.2
0.4
0.6
V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
I
F
- Input Forward Current (mA)
- OUTPUT VOLTAGE (V)
O
Fig. 5 Output Current vs Input Forward Current
Fig. 6 Propagation Delay vs. Ambient Temperature
70
60
50
V
= 3.3V
CC
IF = 0.5mA
= 4.7kΩ
R
L
100
10
1/f = 100µs
Duty Cycle = 10%
T
= 70°C, 85°C
A
T
= -40°C
A
40
30
20
T
A
= 0°C
A
T
= 25°C
t
PLH
1
V
V
= 0.4V
O
10
0
= 3.3V
t
PHL
CC
T
= 25°C
A
0.1
0.1
1
10
-40
-20
0
20
40
60
80
100
T
- Ambient Temperature (°C)
A
I
F
- Forward Current (mA)
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 7 Propagation Delay To Logic Low vs Pulse Period
Fig. 8 Propagation Delay vs. Input Forward Current
28
26
24
22
20
18
16
100
12
10
T
V
R
= 25°C
T
V
= 25°C
A
A
= 3.3V
= 3.3V
CC
CC
= 4.7kΩ
I = 0.5mA
= 4.7kΩ
L
1/f = 100µs
Duty Cycle = 10%
R
L
Duty Cycle = 50µs
t
PLH
8
6
10
4
2
0
1
t
PHL
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
T - Pulse Period (ms)
I - Input Forward Current (mA)
F
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
6
Noise
Shield
Pulse
+
IF
VCC
Generator
+3.3 V
VO
1
2
3
4
8
7
6
5
tr = 5ns
ZO = 50
IF
V
RL
VF1
-
0.1 µF
V01
3.3 V
CL = 15 pF*
VO
V02
-
IF
MONITOR
VF2
50%
50%
TPLH
GND
VOL
Rm
+
TPHL
*Includes Probe and Fixture Capacitance
Fig. 9 Switching Time Test Circuit
Noise
Shield
VCC
V01
+
+3.3 V
1
8
7
6
5
IF
VF1
-
RL
VCM 10 V
90% 90%
VO
2
3
4
A
10%
10%
tf
0.1 µF
0 V
B
V02
-
tr
VFF
VF2
+
GND
VO
3.3 V
Switch at A : I F= 0 mA
VO
VCM
-
VOL
+
Switch at B : I F= 1.6 mA
Pulse Gen
Fig. 10 Common Mode Immunity Test Circuit
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
7
Ordering Information
Order Entry
Option
No Suffix
R2
Identifier
Description
FOD073L
Shipped in tubes (50 units per tube)
FOD073LR2
Tape and reel (2,500 units per reel)
Marking Information
2
73L
1
5
X YY S
4
3
Definitions
1
2
3
4
5
Fairchild logo
Device number
One digit year code, e.g., ‘3’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
8
Carrier Tape Specifications
8.0 ± 0.10
2.0 ± 0.05
3.50 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 MAX
4.0 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
8.3 ± 0.10
5.20 ± 0.20
Ø1.5 ± 0.1
0.1 MAX
6.40 ± 0.20
User Direction of Feed
Dimensions in mm
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
9
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
©2004 Fairchild Semiconductor Corporation
FOD073L Rev. 1.0
www.fairchildsemi.com
10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
FOD073L_09
LVTTL/LVCMOS Compatible Low Input Current High Gain Split Darlington Optocoupler
FAIRCHILD
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