FOD3120SD [ONSEMI]
高抗扰度，2.5A 输出电流，门极驱动器光耦合器;
| 型号： | FOD3120SD |
| 厂家： | 
ONSEMI |
| 描述： | 高抗扰度，2.5A 输出电流，门极驱动器光耦合器 驱动 输出元件 光电 驱动器 |
| 文件： | 总19页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Gate Drive Optocoupler,
High Noise Immunity,
2.5 A Output Current
8
8
1
1
PDIP8 GW
CASE 709AC
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
FOD3120
Description
8
8
The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler,
capable of driving most medium power IGBT/MOSFET. It is ideally
suited for fast switching driving of power IGBT and MOSFETs used
in motor control inverter applications, and high performance power
system.
1
1
PDIP8 GW
CASE 709AD
PDIP8 6.6x3.81, 2.54P
CASE 646BW
MARKING DIAGRAM
It utilizes onsemi’s coplanar packaging technology,
®
OPTOPLANAR , and optimized IC design to achieve high noise
immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
3120
VXXYYB
3120 = Device Number
= DIN_EN/IEC60747−5−5 Option (only
appears on component ordered with this option)
V
Features
• High Noise Immunity Characterized by 35 kV/ms
Minimum Common Mode Rejection
• 2.5 A Peak Output Current Driving Capability
for Most 1200 V/20 A IGBT
XX
YY
B
= Two Digit Year Code
= Two Digit Work Week
= Assembly Package Code
• Use of P−Channel MOSFETs at Output Stage Enables Output
Voltage Swing Close to the Supply Rail
• Wide Supply Voltage Range from 15 V to 30 V
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
8
7
6
NC
ANODE
CATHODE
NC
V
DD
• Fast Switching Speed
♦ 400 ns maximum Propagation Delay
♦ 100 ns maximum Pulse Width Distortion
• Under Voltage LockOut (UVLO) with Hysteresis
• Extended Industrial Temperate Range,
−40°C to 100°C Temperature Range
V
O2
V
O1
V
SS
5
• Safety and Regulatory Approvals
Note: A 0.1 mF bypass capacitor must be
♦ UL1577, 5000 V
for 1 min.
RMS
connected between pins 5 and 8.
♦ DIN EN/IEC60747−5−5
• R
of 1 W (typ.) Offers Lower Power Dissipation
DS(ON)
ORDERING INFORMATION
• >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
• 1414 V Peak Working Insulation Voltage (V
• This is a Pb−Free Device
)
IORM
Applications
• Industrial Inverter
• Uninterruptible Power Supply
• Induction Heating
• Isolated IGBT/Power MOSFET Gate Drive
Related Resources
• FOD3150, 1 A Output Current, Gate Drive Optocoupler Datasheet
• https://www.onsemi.com/products/optoelectronics/
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
August, 2021 − Rev. 3
FOD3120/D
FOD3120
Table 1. TRUTH TABLE
LED
Off
V
O
V
DD
– V “Positive Going” (Turn−on)
V
– V “Negative Going” (Turn−off)
SS
DD SS
0 V to 30 V
0 V to 11.5 V
0 V to 30 V
0 V to 10 V
10 V to 12 V
12 V to 30 V
Low
Low
On
On
On
11.5 V to 13.5 V
13.5 V to 30 V
Transition
High
Table 2. PIN DEFINITIONS
Pin #
Name
Description
1
2
3
4
NC
Anode
Cathode
NC
Not Connected
LED Anode
LED Cathode
Not Connected
5
6
7
8
Negative Supply Voltage
V
V
V
SS
O2
O1
DD
Output Voltage 2 (internally connected to V
Output Voltage 1
)
O1
Positive Supply Voltage
V
Table 3. SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
I–IV
I–IV
I–III
I–III
I–III
Max.
Unit
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
< 300 V
< 450 V
< 600 V
RMS
RMS
RMS
RMS
< 1000 V
(Option T, TS)
RMS
Climatic Classification
40/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
PR
Input to Output Test Voltage, Method A, VIORM x 1.6 = VPR
,
2262
Vpeak
Vpeak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input to Output Test Voltage, Method B, VIORM x 1.875 = VPR
,
2651
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
1414
6000
8.0
Vpeak
Vpeak
mm
mm
mm
mm
°C
IORM
V
IOTM
External Clearance
7.4
External Clearance (for Option T or TS, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
10.16
0.5
DTI
T
S
175
400
700
I
Input Current (Note 1)
mA
S,INPUT
P
Output Power (Duty Factor ≤ 2.7 %) (Note 1)
mW
W
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
10
IO
S
IO
1. Safety limit value − maximum values allowed in the event of a failure.
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2
FOD3120
Table 4. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Value
Units
°C
T
STG
Storage Temperature
Operating Temperature
Junction Temperature
−55 to +125
−40 to +100
−40 to +125
260 for 10 s
T
OPR
°C
TJ
°C
T
SOL
Lead Wave Solder Temperature
°C
(refer to page 13 for reflow solder profile)
I
Average Input Current
25
1
mA
A
F(AVG)
I
Peak Transient Forward Current (Note 2)
Operating Frequency (Note 3)
Reverse Input Voltage
F(Peak)
f
50
kHz
V
VR
5
I
Peak Output Current (Note 4)
Supply Voltage
3.0
A
O(PEAK)
V
DD
– V
0 to 35
0 to 30
0 to VDD
500
45
V
SS
T
A
≥ 90°C
V
Peak Output Voltage
V
O(PEAK)
t
, t
Input Signal Rise and Fall Time
Input Power Dissipation (Note 5, Note 7)
Output Power Dissipation (Note 6, Note 7)
ns
R(IN) F(IN)
PDI
mW
mW
PDO
250
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Pulse Width, PW ≤ 1 ms, 300 pps
3. Exponential Waveform, I
≤ ⎮2.5 A⎮ (≤0.3 ms)
O(PEAK)
4. Maximum pulse width = 10 ms, maximum duty cycle = 1.1%
5. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C
6. No derating required across temperature range.
7. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Ambient Operating Temperature
Value
−40 to +100
15 to 30
7 to 16
Units
°C
T
A
V
DD
– V
Power Supply
V
SS
I
Input Current (ON)
Input Voltage (OFF)
mA
V
F(ON)
V
F(OFF)
0 to 0.8
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at T = 25°C
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
V
ISO
Input−Output Isolation Voltage
TA = 25°C, R.H.< 50 %, t = 1.0 min.,
I−O
5000
V
RMS
I
≤ 10 mA, 50 Hz (Note 8, Note 9)
11
R
C
Isolation Resistance
Isolation Capacitance
V
V
= 500 V (Note 8)
10
W
ISO
ISO
I−O
= 0 V, Frequency = 1.0 MHz (Note 8)
1
pF
I−O
8. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
9. 5000 VRMS for 1 minute duration is equivalent to 6000 VACRMS for 1 second duration.
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FOD3120
Table 7. ELECTRICAL CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
Parameter
Conditions
Min.
Typ.
1.5
Max.
Units
V
VF
Input Forward Voltage
I = 10 mA
1.2
5
1.8
F
D(V /T ) Temperature Coefficient
−1.8
mV/°C
F
A
of Forward Voltage
BV
Input Reverse Breakdown
Voltage
I
R
= 10 mA
V
R
C
Input Capacitance
f = 1 MHz, V = 0 V
60
pF
A
IN
F
I
High Level Output Current
(Note 3)
V
O
V
O
V
O
V
O
= V – 3 V
−1.0
−2.0
−2.5
−2.5
2.5
OH
DD
= V – 6 V
−2.0
DD
I
OL
Low Level Output Current
(Note 3)
= V + 3 V
1.0
2.0
A
V
V
SS
= V + 6 V
2.0
2.5
SS
V
OH
High Level Output Voltage
Low Level Output Voltage
I = 10 mA, I = −2.5 A
V
V
– 6.25 V
– 0.25 V
V
– 2.5 V
– 0.1 V
+ 2.5 V
+ 0.1 V
2.8
F
O
DD
DD
DD
SS
SS
I = 10 mA, I = −100 mA
V
V
V
F
O
DD
V
OL
I = 0 mA, I = 2.5 A
V
V
+ 6.25 V
+ 0.25 V
3.8
F
O
SS
I = 0 mA, I = 100 mA
F
O
SS
I
High Level Supply Current
Low Level Supply Current
V
O
V
O
= Open, I = 7 to 16 mA
mA
mA
mA
DDH
F
I
= Open, V = 0 to 0.8 V
2.8
3.8
DDL
F
I
Threshold Input Current Low to
High
I
O
= 0 mA, V > 5 V
2.3
5.0
FLH
O
V
FHL
Threshold Input Voltage High to
Low
I
O
= 0 mA, V < 5 V
0.8
V
O
V
V
Under Voltage Lockout
Threshold
I = 10mA, V > 5 V
11.5
10.0
12.7
11.2
1.5
13.5
12.0
V
V
V
UVLO+
F
O
I = 10 mA, V < 5 V
UVLO−
F
O
UVLO
Under Voltage Lockout
Threshold Hysteresis
HYS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
tPHL
Parameter
Conditions
Min.
150
150
Typ.
275
255
20
Max.
400
400
100
250
Units
ns
Propagation Delay Time to Logic Low Output
Propagation Delay Time to Logic High Output
I = 7 mA to 16 mA,
F
Rg = 10 W, Cg = 10 nF,
tPLH
ns
f = 10 kHz, Duty Cycle = 50 %
PWD
Pulse Width Distortion, | tPHL – tPLH
|
ns
PDD
(Skew)
Propagation Delay Difference Between Any
Two Parts or Channels, (tPHL – tPLH) (Note 10)
−250
ns
tR
Output Rise Time (10% – 90%)
Output Fall Time (90% – 10%)
UVLO Turn On Delay
60
60
ns
ns
tF
tUVLO ON
tUVLO OFF
| CMH |
I = 10 mA , V > 5 V
1.6
0.4
50
ms
F
O
UVLO Turn Off Delay
I = 10 mA , V < 5 V
ms
F
O
Common Mode Transient Immunity at Output T = 25°C, V = 30 V,
High
35
35
kV/ms
A
F
DD
I = 7 to 16 mA, V
= 2000 V
CM
(Note 11)
| CML |
Common Mode Transient Immunity at Output T = 25°C, V = 30 V, V = 0 V,
Low
50
kV/ms
A
CM
DD
F
V
= 2000 V (Note 12)
10.The difference between tPHL and tPLH between any two FOD3120 parts under same test conditions.
11. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., V > 15.0 V).
O
12.Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., V < 1.0 V).
O
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FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS
0.00
0.5
V
V
= 15 V to 30 V
= 0 V
f = 250 Hz
Duty Cycle = 0.1%
DD
SS
0.0
−0.05
−0.10
−0.15
−0.20
−0.25
−0.30
I = 7 mA to 16 mA
I = 7 mA to 16 mA
F
F
−0.5
I
O
= −100 mA
V
DD
V
SS
= 15 V to 30 V
= 0 V
−1.0
−1.5
−2.0
−2.5
−3.0
T = −40°C
A
T = 25°C
A
T = 100°C
A
0.0
0.5
1.0
1.5
2.0
2.5
100
2.5
−40 −20
0
20
40
60
80 100
T , AMBIENT TEMPERATURE (°C)
I
, OUTPUT HIGH CURRENT (A)
A
OH
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
Figure 1. Output High Voltage Drop vs. Output
High Current
5
8
f = 100 Hz
Duty Cycle = 0.5%
I = 7 mA to 16 mA
R = 10 W to GND
f = 200 Hz
Duty Cycle = 0.2%
I = 7 mA to 16 mA
R = 5 W to GND
4
3
2
1
0
F
F
6
g
g
V
V
= 30 V
= 15 V
DD
V
V
= 30 V
= 15 V
DD
4
2
0
DD
DD
−40 −20
0
20
40
60
80
−40 −20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 4. Output High Current vs. Ambient
Temperature
Figure 3. Output High Current vs. Ambient
Temperature
0.25
0.20
0.15
0.10
0.05
0.00
4
f = 250 Hz
Duty Cycle = 99.9%
V
V
I
= 15 V to 30 V
= 0 V
DD
SS
T = 100°C
A
V
V
V
= −3.0 V to 0.8 V
= 15 V to 30 V
= 0 V
= −3 V to 0.8 V
F(OFF)
F(OFF)
3
2
1
0
I
= 100 mA
DD
SS
O
T = 25°C
A
T = −40°C
A
0.0
0.5
I
1.0
1.5
2.0
−40 −20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
, OUTPUT LOW CURRENT (A)
A
OL
Figure 6. Output Low Voltage vs. Ambient
Temperature
Figure 5. Output Low Voltage vs. Output
Low Current
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FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
5
8
6
4
2
0
f = 200 Hz
Duty Cycle = 99.8%
f = 100 Hz
Duty Cycle = 99.5%
4
3
2
1
0
I = 7 mA to 16 mA
I = 7 mA to 16 mA
F
F
R = 5 W to V
g
R = 10 W to V
g
DD
DD
V
= 30 V
= 15 V
DD
V
= 30 V
= 15 V
DD
V
DD
V
DD
−40 −20
0
20
40
60
−40 −20
0
20
40
60
80
100
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Output Low Current vs. Ambient
Temperature
Figure 8. Output Low Current vs. Ambient
Temperature
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
3.6
3.2
2.8
2.4
2.0
I = 10 mA (for I
)
F
DDH
)
V
V
= 30 V
= 0 V
DD
I = 0 mA (for I
F
DDL
SS
V
SS
= 0 V, T = 25°C
A
I = 0 mA (for I
)
F
DDL
I = 10 mA (for I
F
)
DDH
I
DDH
I
DDH
I
I
DDL
DDL
−40 −20
0
20
40
60
80
100
15
20
25
30
T , AMBIENT TEMPERATURE (°C)
A
V, SUPPLY VOLTAGE (V)
Figure 10. Supply Current vs. Supply
Voltage
Figure 9. Supply Current vs. Ambient
Temperature
400
350
300
250
200
150
100
4.0
I = 10 mA
F
V
V
= 15 V to 30 V
= 0 V
DD
T = 25°C
A
SS
3.5
3.0
2.5
2.0
1.5
1.0
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
Output = Open
t
PHL
t
PLH
30
−40 −20
0
20
40
60
80
100
18
21
24
27
15
T , AMBIENT TEMPERATURE (°C)
A
V
DD
, SUPPLY VOLTAGE (V)
Figure 12. Propagation Delay vs. Supply
Voltage
Figure 11. Low to High Input Current Threshold
vs. Ambient Temperature
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FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
500
400
300
200
100
I = 10 mA
V
= 30 V, V = 0 V
SS
F
DD
V
DD
= 30 V, V = 0 V
T = 25°C
SS
A
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
400
300
200
100
t
PHL
t
PHL
t
PLH
t
PLH
6
8
10
12
14
16
−40 −20
0
20
40
60
80
100
I , FORWARD LED CURRENT (mA)
F
T , AMBIENT TEMPERATURE (°C)
A
Figure 13. Propagation Delay vs. LED Forward
Current
Figure 14. Propagation Delay vs. Ambient
Temperature
500
500
400
300
200
100
I = 10 mA
I = 10 mA
F
F
V
DD
= 30 V, V = 0 V
V = 30 V, V = 0 V
DD SS
SS
Cg = 10 nF, T = 25°C
Duty Cycle = 50%
f = 10 kHz
Rg = 10 W, T = 25°C
Duty Cycle = 50%
f = 10 kHz
A
A
400
300
200
100
t
PHL
t
PHL
t
PLH
t
PLH
0
10
20
30
40
50
0
20
40
60
80
100
R , SERIES LOAD RESISTANCE (W)
g
C , LOAD CAPACITANCE (nF)
g
Figure 16. Propagation Delay vs. Load
Capacitance
Figure 15. Propagation Delay vs. Series Load
Resistance
35
100
T = 25°C
DD
A
V
30
25
20
15
10
5
= 30 V
10
1
T = 100°C
A
T = −40°C
A
0.1
T = 25°C
A
0.01
0.001
0
0.8
5
0.6
1.0
1.2
1.4
1.6
1.8
0
1
2
3
4
V , FORWARD VOLTAGE (V)
F
I , FORWARD LED CURRENT (mA)
F
Figure 18. Input Forward Current vs. Forward
Voltage
Figure 17. Transfer Characteristics
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FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
14
12
10
8
(12.75, 12.80)
(11.25, 11.30)
6
4
2
(11.20, 0.00)
10
(12.70, 0.00)
15
0
0
5
20
(V − V , SUPPLY VOLTAGE (V)
DD
SS)
Figure 19. Under Voltage Lockout
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FOD3120
TEST CIRCUIT
Power Supply
+
V
= 15 V to 30 V
DD
+
C2
47 mF
C1
0.1 mF
Pulse Generator
1
2
3
4
8
7
6
PW = 4.99 ms
Period = 5 ms
Pulse−In
R
= 50 W
OUT
Iol
R2
100 W
Power Supply
V = 6 V
+
+
C4
47 mF
C3
0.1 mF
D1
VOL
LED−IFmon
5
R1
100 W
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8 %
V
= 15 V to 30 V
DD
VSS = 0 V
V
= −3.0 V to 0.8 V
F(OFF)
Figure 20. IOL Test Circuit
Power Supply
+
V
= 15 V to 30 V
+
DD
C2
47 mF
C1
0.1 mF
Pulse Generator
1
8
7
PW = 10 ms
Period = 5 ms
Pulse−In
R
= 50 W
OUT
+
–
2
3
4
Power Supply
V = 6 V
+
C4
47 mF
C3
0.1 mF
Ioh
R2
100 W
6
D1
VOH
LED−IFmon
Current
Probe
5
To Scope
R1
100 W
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2 %
= 15 V to 30 V
= 0 V
V
V
DD
SS
I
= 7 mA to 16 mA
F
Figure 21. IOH Test Circuit
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FOD3120
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
= 15 to 30 V
= 30 V
I
= 7 to 16 mA
DD
F
V
O
100 mA
Figure 22. VOH Test Circuit
1
2
3
4
8
7
100 mA
+
–
0.1 mF
V
DD
V
6
5
O
Figure 23. VOL Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
I
= 7 to 16 mA
DD
F
V
O
Figure 24. IDDH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 30 V
V
= −0.3 to 0.8 V
DD
F
V
O
Figure 25. IDDL Test Circuit
www.onsemi.com
10
FOD3120
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
DD
IF
V
> 5 V
O
Figure 26. IFLH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 15 to 30 V
V
= −0.3 to 0.8 V
DD
F
V
O
Figure 27. VFHL Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
15 V or 30 V
Ramp
I
= 10 mA
F
V
DD
V
= 5 V
O
Figure 28. UVLO Test Circuit
www.onsemi.com
11
FOD3120
1
2
3
4
8
7
6
5
0.1 mF
V
O
+
–
V
= 15 to 30 V
DD
+
–
Rg = 10 W
Probe
50 W
F = 10 kHz
DC = 50 %
Cg = 10 nF
IF
tr
tf
90 %
50 %
10 %
VOUT
tPLH
tPHL
Figure 29. tPHL, tPLH, tR and tF Test Circuit and Waveforms
1
2
3
4
8
7
6
5
I
F
A
B
0.1 mF
+
–
V
= 30V
DD
+
–
V
5 V
O
+ –
V
= 2,000 V
CM
V
CM
0 V
Dt
V
V
V
OH
O
O
Switch at A: I = 10 mA
F
V
OL
Switch at B: I = 0 mA
F
Figure 30. CMR Test Circuit and Waveforms
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12
FOD3120
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
240
tP
220
200
Tsmax
Tsmin
tL
Preheat Area
180
160
140
120
100
80
t
s
60
40
20
0
120
Time 25°C to Peak
Time (seconds)
240
360
Figure 31. Reflow Profile
Table 9. REFLOW PROFILE
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60−120 s
S
Ramp−up Rate (t to t )
3°C/s max.
217°C
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60−150 s
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
260°C +0°C / −5°C
30 s
P
Ramp−down Rate (T to T )
6°C/s max.
8 min. max.
P
L
Time 25°C to Peak Temperature
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13
FOD3120
ORDERING INFORMATION
Part Number
FOD3120
†
Package
Shipping
DIP 8−Pin
50 / Tube
50 / Tube
FOD3120S
SMT 8−Pin (Lead Bend)
SMT 8−Pin (Lead Bend)
FOD3120SD
1000 / Tape & Reel
50 / Tube
FOD3120V
DIP 8−Pin, DIN EN/IEC60747−5−5 option
FOD3120SV
SMT 8−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
SMT 8−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
DIP 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
50 / Tube
FOD3120SDV
FOD3120TV
1000 / Tape & Reel
50 / Tube
FOD3120TSV
FOD3120TSR2V
50 / Tube
700 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
www.onsemi.com
14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13445G
PDIP8 6.6X3.81, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
DATE 18 SEP 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13446G
PDIP8 9.655X6.6, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AC
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13447G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AD
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13448G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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