FOD4116S [ONSEMI]
三端双向可控硅开关驱动器输出光耦合器,6 引脚 DIP 600V 零交叉;型号: | FOD4116S |
厂家: | ONSEMI |
描述: | 三端双向可控硅开关驱动器输出光耦合器,6 引脚 DIP 600V 零交叉 开关 驱动 三端双向交流开关 输出元件 光电 可控硅开关 驱动器 |
文件: | 总16页 (文件大小:599K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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6 2016
FOD410、FOD4108、FOD4116、FOD4118
6 引脚DIP 无缓冲过零Triac 驱动器
产品特性
说明
FOD410、FOD4108、FOD4116 和FOD4118 器件包含
一个红外线发光二极管,该二极管耦合至采用两个反向并
联 SCR 形成的混合三端双向可控硅开关,形成能够驱动
分立式三端双向可控硅开关的三端双向可控硅开关功能。
FOD4116和FOD4118采用一个高效红外线发光二极管提
供增强的触发灵敏度。这些器件采用标准6 引脚双列直插
(DIP) 封装。
•
300 mA 通态电流
• 过零电压
• 高阻断电压
– 600 V (FOD410, FOD4116)
– 800 V (FOD4108, FOD4118)
• 高触发灵敏度
– 1.3 mA (FOD4116、FOD4118)
– 2 mA (FOD410、FOD4108)
• 高静态dv/dt (10,000V/µs)
• 安全和法规认证:
– UL1577, 5,000 VACRMS (1 分钟)
– DIN-EN/IEC60747-5-5
应用
• 固态继电器
• 工业控制
• 照明控制
• 静态功率开关
•
AC 电机启动器
功能示意图
封装外形
ANODE 1
6 MAIN TERM.
6
6
1
1
CATHODE
N/C
NC*
2
3
5
4
6
MAIN TERM.
1
Figure 2. Package Outlines
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
安全性和绝缘标准
根据DIN EN/IEC 60747-5-5,此光电耦合器仅适用于安全极限数据之内的“ 安全电气绝缘”。通过保护性电路确保各项
安全标准达标。
参数
特性
I–IV
< 150 VRMS
< 300 VRMS
基于0110/1.89 表1 的安装分类,提供额定电源电压
I–IV
55/100/21
2
气候分类
污染等级(DIN VDE 0110/1.89)
相比漏电起痕指数
175
符号
参数
数值
单位
输入至输出测试电压,方法A,VIORM x 1.6 = VPR,
型式和样品测试,tm = 10 s,局部放电< 5 pC
1360
Vpeak
VPR
输入至输出测试电压,方法B,VIORM x 1.875 = VPR,
100% 生产测试,tm = 1 s,局部放电< 5 pC
1594
Vpeak
VIORM
VIOTM
850
6000
7
Vpeak
Vpeak
mm
mm
mm
°C
最大工作绝缘电压
最高允许过电压
外部爬电距离
7
外部绝缘间隙
DTI
TS
0.4
175
绝缘穿透距离(绝缘厚度)
壳温(1)
输入电流(1)
IS,INPUT
PS,OUTPUT
RIO
400
mA
输出功率(1)
700
> 109
mW
TS、VIO = 500 V(1) 时的绝缘阻抗
注意:
1. 安全极限值– 发生故障时允许的最大值。
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
2
绝对最大额定值
应力超过绝对最大额定值,可能会损坏设备。在超出推荐的工作条件的情况下,该器件可能无法正常运行或操作,所以
不建议让器件在这些条件下长期工作。此外,过度暴露在高于推荐的工作条件下,会影响器件的可靠性。绝对最大额定
值仅是额定应力值。除非另有说明,TA = 25°C
器件
所有
所有
所有
所有
所有
所有
符号
TSTG
TOPR
TJ
参数
数值
单位
°C
-55 to +150
存储温度
°C
工作温度
-55 至+100
-55 至+125
10 秒260
500
°C
结温的关系
引脚焊接温度
TSOL
°C
mW
mW/°C
器件总功耗(25°C 时)
超过25°C 时降额
PD(TOTAL)
6.6
发射极
IF
30
6
A
V
连续正向电流
所有
所有
所有
所有
VR
反向电压的关系
50
mW
mW/°C
总功耗(25°C 环境温度时)
超过25°C 时降额
PD(EMITTER)
0.71
检测器
FOD410, FOD4116
600
800
3
VDRM
V
断态输出端电压
FOD4108, FOD4118
ITSM
ITM
A
mA
峰值非重复浪涌电流(单循环60 Hz 正弦波)
峰值通态电流
所有
所有
所有
所有
300
450
5.9
mW
总功耗(25°C 环境温度时)
超过25°C 时降额
PD (检测器)
mW/°C
©2014 飞兆半导体公司
www.fairchildsemi.com
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
3
电气特性
除非另有说明,TA = 25°C
独立元器件特性
符号
参数
测试条件
器件
最小值 典型值 最大值
单位
发射极
VF
IF = 20 mA
VR = 6 V
1.25
1.50
10
V
输入正向电压
反向漏电流
所有
所有
IR
0.0001
μA
检测器
FOD410,
FOD4116
VD = 600 V
IF = 0,
T
ID(RMS)
3
3
100
100
μA
峰值阻断电流,任一方向
A = 100°C(2)
FOD4108,
FOD4118
V
V
V
D = 800 V
D = 600 V
D = 800 V
FOD410,
FOD4116
IR(RMS)
TA = 100°C
μA
反向电流
FOD4108,
FOD4118
F = 0(3) (图15)
所有
dv/dt
10,000
V/μs
关断电压上升临界值
I
注意:
2. 必须在dv/dt 额定值范围内施加测试电压。
3. 这就是静态dv/dt。测试电路见图15。换向dv/dt 只与负载驱动晶闸管有关。
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
4
电气特性(续)
除非另有说明,TA = 25°C
传输特性
符号
参数
测试条件
器件
最小值 典型值 最大值 单位
FOD410,
FOD4108
0.65
0.65
2.2
2.0
1.3
IFT
mA
V
LED 触发电流
主端电压= 5 V(4)
FOD4116,
FOD4118
峰值通态电压,任一
方向
VTM
3
ITM = 300 mA (峰值)、IF = 额定值IFT
T = 3 V
所有
IH
IL
V
200
5
500
µA
维持电流,任一方向
闩锁电流
所有
所有
VT = 2.2 V
mA
FOD410,
FOD4116,
FOD4118
VRM = VDM = 424 VAC
VRM = VDM = 565 VAC
tON
60
52
µs
导通时间
关断时间
FOD4108
PF = 1.0,
IT = 300 mA
FOD410,
FOD4116,
FOD4118
V
RM = VDM = 424 VAC
tOFF
µs
VRM = VDM = 565 VAC
TJ = 25°C
FOD4108
10,000
5,000
V/µs
VD = 0.67 VDRM
di/dtcrq ≤15 A/ms
,
换流时的电压临界上
升率
dv/dtcrq
di/dtcr
所有
TJ = 80°C
V/µs
A/µs
8
通态电流临界上升率
所有
耦合输入/ 输出电压
dv(IO)/dt
IT = 0 A, VRM = VDM = 424 VAC
10,000
V/µs
上升
所有
临界值
注意:
4. 保证所有器件都能在IF 值小于或等于最大IFT 时触发。因此,推荐的工作IF 介于最大IFT(对于FOD410 和FOD4108
为2 mA,而对于FOD4116 和FOD4118 为1.3 mA)和绝对最大IF (60 mA)之间。
过零特性
符号
参数
测试条件
器件
最小值 典型值 最大值 单位
抑制电压(超过后器件
IF = 额定IFT
VINH
8
25
V
所有
无法触发的MT1-MT2
电压)
I
F = 额定IFT、额定VDRM、关断状态
IDRM2
20
200
µA
抑制状态下的漏电流
所有
绝缘特性
符号
参数
测试条件
器件
最小值 典型值 最大值 单位
VISO
f = 60 Hz, t = 1 Minute(5)
5,000
VACRMS
稳态隔离电压
所有
注意:
5. 隔离电压VISO 是内部器件介质击穿额定电压。对于该测试,引脚1、2 和3 共用,引脚4、5 和6 共用。5,000 VACRMS
持续1 分钟相当于6,000 VACRMS 持续1 秒钟。
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
5
典型应用
Figure 3 shows a typical circuit for when hot line switch-
ing is required. In this circuit the “hot” side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
R is calculated so that I is equal to the rated I of theꢀ
in F FT
part, 2 mA for FOD4ꢁ0 and FOD4ꢁ08, 1.3 mA forꢀ
FOD4ꢁ16 and FOD4ꢁ18. The 39 Ω resistor and 0.01 μFꢀ
capacitor are for snubbing of the triac and may or mayꢀ
not be necessary depending upon the particular triacꢀ
and load use.
Rin
360 Ω
1
2
6
5
HOT
VCC
FOD4ꢁ0
FOD4ꢁ08
FOD4ꢁ16
FOD4ꢁ18
FKPF12N80
39ꢀΩꢀ
3
4
240 VAC
0.01μF
330 Ω
LOAD
NEUTRAL
* For highly inductive loads (power factor < 0.5), change this value to 360 ohms.
Figure 3. Hot-Line Switching Application Circuit
©2014 飞兆半导体公司
www.fairchildsemi.com
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
6
典型性能特征
1.8
1.6
1.4
1.2
1.0
0.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 5.0 V
AK
Normalized to T = 25°C
A
-55°C
25°C
85°C
0.6
0.1
-60
-40
-20
T – AMBIENT TEMPERATURE (°C)
A
0
20
40
60
80
100
1
10
100
I
– FORWARD CURRENT (mA)
F
Figure 4. Forward Voltage (V )
F
Figure 5. Normalized LED Trigger Current (I
vs. Ambient Temperature (T )
A
)
FT
vs. Forward Current (I )
F
100
10
1
10000
1000
t
= t(I /I
FT 25°C)
D
D
F
= 400 V
τ
V
F = 60 Hz
P-P
Duty Factor
0.005
0.01
t
τ
0.02
DF =
t
0.05
0.1
0.2
0.5
100
10
10-6
10-5
10-4
10-3
10-2
10-1
100
101
1
10
/I – NORMALIZED I (mA)
100
t – LED PULSE DURATION (s)
I
FT
F
F
Figure 6. Peak LED Current
vs. Duty Factor, Tau
Figure 7. Trigger Delay Time
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1000
100
10
V
= 250 V
P-P
L
F = 60 Hz
Normalized to DC
T
= 100°C
A
T
= 25°C
A
1
0
200
400
600
800
1000
0
1
2
3
4
P
W
– PULSE WIDTH (μs)
V
TM
– ON-STATE VOLTAGE (V)
Figure 8. Pulse Trigger Current
Figure 9. On-State Voltage (V
)
)
TM
vs. On-State Current (I
TM
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
7
典型性能特性 (接上页)
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Normalized to T = 25°C
A
V
= 800 V, I (μA)
BD
D
Normalized to T = 25°C
A
1
0.1
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
T
A
– AMBIENT TEMPERATURE (°C)
Figure 10. Normalized Holding Current (I )
H
Figure 11. Normalized Off-State Current (I
)
DRM
vs. Ambient Temperature (T )
A
vs. Ambient Temperature (T )
A
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
I
V
= Rated I
FT
= 600 V
F
I
= Rated I
FT
Normalized to T = 25°C
F
DRM
Normalized to T = 25°C
A
A
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
T – AMBIENT TEMPERATURE (°C)
A
0
20
40
60
80
100
T
– AMBIENT TEMPERATURE (°C)
A
Figure 12. Normalized Inhibit Voltage (V
vs. Ambient Temperature (T )
)
Figure 13. Normalized Leakage in Inhibit State (I
vs. Ambient Temperature (T )
A
)
INH
DRM2
A
350
300
250
200
150
100
50
I
TP
= f(T )
A
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
Figure 14. Current Reduction
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
8
ZL
VCC 300ꢀȍ
5ꢀV
1
2
6
4
R1
R2
ꢀ)2'ꢁꢁꢂ
)2'ꢁꢁꢂꢃ
)2'ꢁꢁꢄꢅ
)2'ꢁꢁꢄꢃ
180ꢀȍ
C1
115Vac
7400
NOTE: Circuit supplies 25 mA drive to gate of triac
at Vin = 25 V and T < 70°C
A
TRIAC
CꢃꢀꢁX)ꢂ
0.1
IGTꢀꢁP$ꢂ
R2ꢀꢁȍꢂ
2400
1200
800
15
30
50
0.2
0.3
1000ꢀȍ
27ꢀȍ
2 W
VDRM/VRRM SELECT
10 W
WIREWOUND
6
4
X100 PROBE
1
DUT
DIFFERENTIAL
PREAMP
20ꢀkȍ 2W
0.047ꢀQ)
1000 V
0.33ꢀX) 1000 V
2
X100 PROBE
470 pF
dV
dt
VERNIER
1 0ȍꢀ
2W EACH
MOUNT DUT ON
TEMPERATURE CONTROLLED
Cu PLATE
0.001ꢀQ)
0.005ꢀQ)
0.01ꢀQ)
100ꢀȍ
2 W
1.2 0ȍ
2 W
82ꢀꢀȍ
2 W
POWER
TEST
0.047ꢀQ)
0.1ꢀQ)
1N914
RFP4N100
20 V
0.47ꢀQ)
56ꢀȍ
0-1000 V
10 mA
2 W
1N967A
18 V
f = 10 Hz
1/4 W
1ꢀNȍ
PW = 100 μs
50 PULSE
GENERATOR
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN
dY
Figure ꢃꢄ. Circuit for Staticꢀ Measurement of Power Thyristors
dt
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
9
240 VAC
R1
D1
1
2
6
5
VCC
FOD4ꢁ0
FOD4ꢁ08
FOD4ꢁ16
FOD4ꢁ18
Rin
SCR
SCR
360 Ω
3
4
R2
D2
LOAD
Figure 1ꢅ. Inverse-Parallel SCR Driver Circuit
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,
R1 and R2, are optional 330 Ω.
Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device
only.
Reflow Profile
245°C, 10 to 30 seconds
300
260°C peak
250
200
150
100
50
Time above 183°C, < 160 seconds
Ramp up = 2 to 10°C/second
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 26ꢂ°C (package surface temperature)
• Time of temperature higher than 18ꢃ°C for 160 seconds or less
• One time soldering reflow is recommendeG
Figure 1ꢆ. Reflow Profile
©2014 飞兆半导体公司
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
www.fairchildsemi.com
10
订购信息
部件编号
封装
封装方法
管状包装(50 单位)
管状包装(50 单位)
卷带包装(1000 单位)
管状包装(50 单位)
管状包装(50 单位)
卷带包装(1000 单位)
管状包装(50 单位)
FOD410
FOD410S
DIP 6 引脚
SMT 6 引脚(引脚弯曲)
SMT 6 引脚(引脚弯曲)
FOD410SD
FOD410V
DIP 6 引脚、DIN EN/IEC 60747-5-5 选项
FOD410SV
FOD410SDV
FOD410TV
SMT 6 引脚(弯曲引线)、DIN EN/IEC 60747-5-5 选项
SMT 6 引脚(弯曲引线)、DIN EN/IEC 60747-5-5 选项
DIP 6 引脚、0.4" 引脚间距、DIN EN/IEC 60747-5-5 选项
注意:
6. 该表中所列的可订购产品部件编号系统同样适用于FOD4108、FOD4116 和FOD4118 产品系列。
标识信息
1
2
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6
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5
3
4
图18. 顶标
表1. 顶标定义
1
2
3
4
5
6
飞兆徽标
器件编号
VDE 标记DIN EN/IEC60747-5-5 选项(只有组件订购附带此选项时出现)
一位数年份代码,如“6”
工作周数,范围从“01” 至“53”
装配封装码
©2014 飞兆半导体公司
www.fairchildsemi.com
FOD410、FOD4108、FOD4116、FOD4118 版本1.6.0
11
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