FOD8173TR2 [ONSEMI]

3.3 V/5 V,20 Mbit/s,逻辑门极光耦合器,采用拉伸体 SOP 6 引脚;
FOD8173TR2
型号: FOD8173TR2
厂家: ONSEMI    ONSEMI
描述:

3.3 V/5 V,20 Mbit/s,逻辑门极光耦合器,采用拉伸体 SOP 6 引脚

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FOD8173,  
FOD8173Tꢀ  
3.3 V/5 V, 20 Mbit/sec, Logic  
Gate Optocoupler in  
Stretched Body SOP 6-Pin  
www.onsemi.com  
Description  
The FOD8173 series packaged in a stretched body 6−pin small  
outline plastic package, consists of an aluminum gallium arsenide  
(AlGaAs) light emitting diode and a CMOS detector IC comprises an  
integrated photodiode, a high speed transimpedance amplifier and a  
voltage comparator with a totem−pole output driver. The electrical and  
switching characteristics are guaranteed over the extended industrial  
Stretched  
SOP 6 PINS  
temperature range of −40°C to 100°C and a V range of 3 V to 5.5 V.  
DD  
MARKING DIAGRAM  
Features  
ON  
8173  
VXXYYP  
FOD8173T − 8 mm Creepage and Clearance Distance, and 0.4 mm  
insulation distance to achieve reliable and high voltage insulation  
High Noise Immunity characterized by common mode transient  
immunity (CMTI)  
20 kV/ms Minimum CMTI  
3.3 V and 5 V CMOS Compatibility  
ON  
8173  
V
XX  
YY  
P
= Corporate Name  
= Device Number  
= DIN EN/IEC60747−5−5 Option  
= Two Digit Year Code  
= Digit Work Week  
Specifications Guaranteed Over 3 V to 5.5 V supply voltage and −40  
to 100°C extended industrial temperature range  
High Speed  
= Assembly Package Code  
PIN CONNECTIONS  
20 Mbit/sec Date Rate (NRZ)  
55 ns max. Propagation Delay  
20 ns max. Pulse Width Distortion  
Safety and regulatory pending approvals  
UL1577, 5,000 VAC  
for 1 min.  
RMS  
DIN−EN/IEC60747−5−5, 1,140 V peak working  
insulation voltage for FOD8173T  
Typical Applications  
TRUTH TABLE  
Microprocessor System Interface  
SPI, I2C  
LED  
V
O
Off  
On  
High  
Low  
Industrial Field Bus Communications  
DeviceNet, CAN, RS485  
Programmable Logic Control  
Isolated Data Acquisition System  
Voltage Level Translator  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 9 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
August, 2018 − Rev.1  
FOD8173/D  
FOD8173, FOD8173T  
SAFETY AND INSULATIONS RATING  
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Table 1.  
Parameter  
Characteristics  
FOD8173  
I–IV  
FOD8173T  
I–IV  
< 150 VRMS  
Installation Classifications per  
DIN VDE 0110/1.89 Table 1, For  
Rated ains Voltage  
< 300 VRMS  
< 450 VRMS  
< 600 VRMS  
I–IV  
I–IV  
I–III  
I–IV  
I–III  
I–III  
Climatic Classification  
40/100/21  
2
40/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
175  
Table 2.  
Symbol  
Characteristics  
FOD8173 FOD8173T  
Parameter  
Unit  
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100%  
Production Test with tm = 1 s, Partial Discharge < 5 pC  
1,671  
1,426  
2,137  
1,824  
Vpeak  
Vpeak  
V
PR  
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and  
Sample Test with tm = 10 s, Partial Discharge < 5 pC  
V
M
M
Maximum Working Insulation Voltage  
Highest Allowable Over−Voltage  
External Creepage  
891  
1,140  
8,000  
w 8.0  
w 8.0  
w 0.4  
Vpeak  
Vpeak  
mm  
IOR  
V
6,000  
w 8.0  
w 7.0  
w 0.4  
IOT  
External Clearance  
mm  
DTI  
Distance Through Insulation (Insulation Thickness)  
mm  
Safety Limit Values – Maximum Values Allowed in the Event of a Failure,  
T
Case Temperature  
Input Current  
Output Power  
150  
200  
300  
150  
200  
300  
°C  
mA  
mW  
S
I
S,INPUT  
P
S,OUTPUT  
9
9
R
Insulation Resistance at T , VIO = 500 V  
>10  
>10  
W
IO  
S
www.onsemi.com  
2
FOD8173, FOD8173T  
Table 3. ABSOLUTE MAXIMUM RATINGS (TA = 255C unless otherwise specified)  
Symbol  
Parameter  
Value  
Units  
°C  
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
−40 to +125  
−40 to +100  
−40 to +125  
260 for 10sec  
STG  
T
OPR  
°C  
T
J
°C  
T
SOL  
Lead Solder Temperature (Refer to Reflow Temperature Profile)  
°C  
Input Characteristics  
I
Average Forward Input Current  
Reverse Input Voltage  
20  
5.0  
40  
mA  
V
F
V
R
P
Input Power Dissipation (Note 1)  
mW  
DI  
Output Characteristics  
V
Supply Voltage  
0 to 6.0  
V
V
DD  
V
Output Voltage  
−0.5 to VDD + 0.5  
O
I
Average Output Current  
Output Power Dissipation (Note 1)  
10  
70  
mA  
mW  
O
P
DO  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating  
conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not  
recommend exceeding them or designing to Absolute Maximum Ratings.  
Table 4.  
Symbol  
Parameter  
Min.  
Max.  
Unit  
T
Ambient Operating Temperature  
−40  
3.0  
0
+100  
5.5  
0.8  
7
°C  
V
A
V
DD  
Supply Voltages (Note 2)  
Logic Low Input Voltage  
Logic Low Output Current  
Logic High Input Current  
V
V
FL  
OL  
FH  
I
I
0
mA  
mA  
5.0  
16  
Table 5. ISOLATION CHARACTERISTICS  
(Apply over all recommended conditions, typical value is measured at TA = 25°C)  
Symbol  
Parameter  
Conditions  
Min.  
5,000  
Typ.  
Max.  
Units  
TA = 25°C, R.H. < 50%, t = 1.0min,  
II−O v 20μA  
V
ISO  
Input−Output Isolation Voltage  
V
ACRMS  
(Notes 3, 4)  
11  
R
C
Isolation Resistance  
Isolation Capacitance  
VI−O = 500V (Note 3)  
10  
W
ISO  
ISO  
VI−O = 0V, freq=1.0Mhz (Note 3)  
1.0  
pF  
1. No derating required to 100°C.  
2. 0.1 mF bypass capacitor must be connected between 4 and 6.  
3. Device is considered a two terminal device: Pins 1, 2 and 3 are shorted together and Pins 4, 5, and 6 are shorted together.  
4. 5,000 VAC for 1 minute duration is equivalent to 6,000 VAC for 1 second duration.  
RMS  
RMS  
www.onsemi.com  
3
FOD8173, FOD8173T  
Table 6. ELECTRICAL CHARACTERISTICS  
(Apply over all recommended conditions, T = −40°C to +100°C, 3.0V V 5.5V, unless otherwise specified.  
A
DD  
Typical value is measured at T = 25°C and V = 3.3V.)  
A
DD  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
INPUT CHARACTERISTICS  
Forward Voltage  
V
I = 10 mA  
1.0  
5.0  
1.35  
18  
1.80  
V
V
F
F
Input Reverse Breakdown  
Voltage  
BV  
I
R
= 10 mA  
R
Threshold Input Current  
I
2.8  
5.0  
mA  
FHL  
OUTPUT CHARACTERISTICS  
0.0027  
0.27  
0.01  
0.8  
I
I
= 20 uA, I = 10 mA  
F
O
V
Logic Low Output Voltage  
Logic High Output Voltage  
V
V
OL  
= 4 mA, I = 10 mA  
O
F
V
= 3.3 V, I = −20 mA, I = 0 mA  
V
V
− 0.1  
3.3  
3.1  
DD  
DD  
O
F
DD  
V
= 3.3 V, I = −4 mA, I = 0 mA  
− 0.5  
− 0.1  
− 0.5  
O
F
DD  
V
OH  
V
V
5.0  
4.9  
V
V
= 5.0 V, I =−20 mA, I = 0 mA  
O F  
DD  
DD  
= 5.0 V, I =−4 mA, I = 0 mA  
DD  
DD  
O
F
3.3  
4.0  
3.3  
4.0  
4.8  
5.0  
4.8  
5.0  
I = 10 mA, V = 3.3 V  
F
DD  
Logic Low Output Supply  
Current  
I
DDL  
I = 10 mA, V = 5.0 V  
F
DD  
mA  
I = 0 mA, V = 3.3 V  
F
DD  
Logic High Output Supply  
Current  
I
DDH  
I = 0 mA, V = 5.0 V  
F
DD  
Table 7. SWITCHING CHARACTERISTICS  
Apply over all recommended conditions, (T = −40°C to +100°C, 3.0V V 5.5V, I = 5 mA), unless otherwise specified.  
A
DD  
F
Typical value is measured at T = 25°C and V = 3.3V.  
A
DD  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
Date Rate  
(Note 5)  
20  
Mbit/sec  
t
Pulse Width  
50  
ns  
ns  
PW  
Propagation Delay Time to  
Logic Low Output  
t
C = 15pF  
25  
25  
55  
55  
20  
PHL  
PLH  
L
Propagation Delay Time to  
Logic High Output  
t
C = 15pF  
L
ns  
ns  
Pulse Width Distortion,  
PWD  
C = 15pF  
L
5.5  
| t  
PHL  
− t  
PLH  
|
t
Output Rise Time (10% − 90%) C = 15pF  
7.0  
7.0  
ns  
ns  
R
L
t
Output Fall Time (90% − 10%) C = 15pF  
L
F
Common Mode Transient  
Immunity at Output High  
I = 0mA, V > 0.8V  
,
F
O
DD  
|CM |  
20  
20  
40  
40  
kV/ms  
kV/ms  
H
V
CM  
= 1000V, T = 25°C (Note 6)  
A
Common Mode Transient  
Immunity at Output Low  
I = 5mA, V < 0.8V,  
F
O
|CM |  
L
V
CM  
= 1000V, T = 25°C (Note 6)  
A
5. Data rate is based on 10 MHz, 50% NRZ pattern with a 50 nsec minimum bit time.  
6. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode  
impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable  
negative dVcm/dt on the trailing edge of the common pulse signal, Vcm, to assure that the output will remain low.  
www.onsemi.com  
4
FOD8173, FOD8173T  
TYPICAL CHARACTERISTICS  
Figure 1. Input Forward Current vs. Forward Voltage  
Figure 2. Input Threshold Current vs. Ambient  
Temperature  
Figure 3. Logic Low Input Supply Current vs.  
Ambient Temperature  
Figure 4. Logic Low Input Supply Current vs. Input  
Frequency (VDD = 3.3 V)  
Figure 5. Logic Low Input Supply Current vs. Input  
Frequency (VDD = 5 V)  
Figure 6. Logic High Input Supply Current vs.  
Ambient Temperature  
www.onsemi.com  
5
FOD8173, FOD8173T  
Figure 7. Propagation Delay vs. Ambient Temperature  
Figure 8. Pulse Width Distortion vs. Ambient  
Temperature  
Figure 9. Pulse Width Distortion vs. Input Forward  
Current  
Figure 10. Propagation Delay vs. Input Forward  
Current  
Figure 11. Rise, Fall Time vs. Ambient Temperature  
Figure 12. Rise, Fall Time vs. Input Forward Current  
www.onsemi.com  
6
FOD8173, FOD8173T  
SCHEMATICS  
Figure 13. Test Circuit for Propagation Delay Time, Rise Time and Fall Time  
Figure 14. Test Circuit for Instantaneous Common Mode Rejection Voltage  
www.onsemi.com  
7
FOD8173, FOD8173T  
REFLOW PROFILE  
Figure 15. Reflow Profile  
Table 8. REFLOW PROFILE  
Profile Feature  
Pb−Free Assembly Profile  
150°C  
Temperature Min. (Tsmin)  
Temperature Max. (Tsmax)  
Time (tS) from (Tsmin to Tsmax)  
Ramp−up Rate (tL to tP)  
200°C  
60 − 120 seconds  
3°C/second max  
217°C  
Liquidous Temperature (TL)  
Time (tL) Maintained Above (TL)  
Peak Body Package Temperature  
Time (tP) within 5°C of 260°C  
Ramp−down Rate (TP to TL)  
Time 25°C to Peak Temperature  
60 − 150 seconds  
260°C + 0°C / −5°C  
30 seconds  
6°C / second max.  
8 minutes max.  
www.onsemi.com  
8
FOD8173, FOD8173T  
Table 9. ORDERING INFORMATION  
Part Number  
Package  
Packing Method  
Tube (100 units per tube)  
FOD8173  
Stretched Body SOP 6−Pin  
Stretched Body SOP 6−Pin  
FOD8173R2  
Tape and Reel (1,000 units per reel)  
Tube (100 units per tube)  
Stretched Body SOP 6−Pin,  
DIN EN/IEC60747−5−5 Option (pending)  
FOD8173V  
Stretched Body SOP 6−Pin,  
DIN EN/ IEC60747−5−5 Option (pending)  
FOD8173R2V  
Tape and Reel (1,000 units per reel)  
FOD8173T  
Stretched Body SOP 6−Pin, Wide Lead  
Stretched Body SOP 6−Pin, Wide Lead  
Tube (100 units per tube)  
FOD8173TR2  
Tape and Reel (1,000 units per reel)  
Stretched Body SOP 6−Pin, Wide Lead,  
DIN EN/IEC60747−5−5 Option (pending)  
FOD8173TV  
Tube (100 units per tube)  
Stretched Body SOP 6−Pin, Wide Lead,  
DIN EN/ IEC60747−5−5 Option (pending)  
FOD8173TR2V  
Tape and Reel (1,000 units per reel)  
www.onsemi.com  
9
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC6 W  
CASE 751EM  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13749G  
SOIC6 W  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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