FOD819300 [ONSEMI]
FOD819 4-Pin DIP High Speed Phototransistor Optocouplers;
| 型号： | FOD819300 |
| 厂家： | 
ONSEMI |
| 描述： | FOD819 4-Pin DIP High Speed Phototransistor Optocouplers |
| 文件： | 总11页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FOD819 Series
FOD819 4-Pin DIP High
Speed Phototransistor
Optocouplers
Description
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The FOD819 consists of a gallium arsenide (GaAs) infra− red
emitting diode, driving a high speed photo detector with integrated
base−to−emitter resistor, R , in a 4−pin dual−in−line package. It is
BE
designed to be an improved replacement to the popular FOD817
Series when higher speed performance is required in isolated data
signal transmission.
Features
• High Speed Performance ~ 30 kHz
DIP 4 PINS
• Current Transfer Ratio: 100% to 600%
• Minimum BV
of 80 V Guaranteed
CEO
• Safety and Regulatory Approvals:
for 1 Minute
MARKING DIAGRAM
• UL1577, 5,000 VAC
RMS
• DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Typical Applications
• Digital Logic Inputs
• Microprocessor Inputs
• Power Supply Monitor
• Twisted Pair Line Receiver
• Telephone Line Receiver
ON
1. ON
2. 819
3. V
= Company Logo
= Device Number
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Digit Work Week
4
X
5. ZZ
6. Y
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2018 − Rev. 2
FOD819/D
FOD819 Series
Safety and Insulation Ratings
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Table 1. SAFETY AND INSULATION RATINGS
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
I–IV
I–III
RMS
RMS
< 300 V
Climatic Classification
55/115/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Table 2.
Symbol
Parameter
Value
Unit
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR
,
1360
Vpeak
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
1594
Vpeak
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
8000
≥ 7
VIORM
VIOTM
Vpeak
Vpeak
mm
mm
mm
mm
°C
≥ 7
External Clearance
≥ 10
≥ 0.4
175
400
External Clearance (for Option W, 0.4” Lead Spacing)
DTI
TS
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
IS,INPUT
PS,OUTPUT
RIO
mA
Output Power (Note 1)
700
mW
Ω
Insulation Resistance at TS, VIO = 500 V (Note 1)
> 1011
1. Safety limit values – maximum values allowed in the event of a failure.
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−55 to +125
−55 to +110
°C
°C
°C
°C
STG
T
OPR
T
J
−55 to +125
T
260 for 10 seconds
SOL
θ
Junction−to−Case Thermal Resistance
Total Device Power Dissipation
210
200
°C/W
JC
P
TOT
mW
EMITTER
I
Continuous Forward Current
Reverse Voltage
50
6
mA
V
F
V
R
Power Dissipation
70
1.7
mW
P
D
Derate Above 100°C
mW/°C
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2
FOD819 Series
Table 3. ABSOLUTE MAXIMUM RATINGS (continued)
Symbol Parameter
DETECTOR
Value
Unit
V
Collector−Emitter Voltage
Emitter−Collector Voltage
80
V
CEO
ECO
V
2
V
mA
I
C
Continuous Collector Current
Collector Power Dissipation
Derate Above 90°C
30
150
2.9
mW
P
C
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics
Table 4. INDIVIDUAL COMPONENT CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Test Conditions
Min.
Typ.
1.2
30
Max.
Unit
EMITTER
V
F
Forward Voltage
I = 1.5 mA
F
1.4
10
V
I
R
Reverse Current
V
R
= 4.0 V
μA
pF
C
Terminal Capacitance
V = 0, f = 1 kHz
t
DETECTOR
I
Collector Dark Current
V
= 40 V, I = 0
100
nA
V
CEO
CE
F
BV
Collector−Emitter Breakdown Voltage
Emitter−Collector Breakdown Voltage
I
C
= 0.1 mA, I = 0
80
150
7
CEO
ECO
F
BV
I = 0.1 mA, I = 0
E
2
V
F
DC TRANSFER CHARACTERISTICS
Current Transfer Ratio (Note 2)
CTR
I = 1.5 mA, V = 5 V
100
600
0.3
10
%
V
F
CE
Saturation Voltage
I = 1.5 mA, I = 0.2 mA
F C
V
I
CE(SAT)
C(OFF)
OFF−state collector current
V = 0.7 V, V = 40 V
μA
F
CE
AC TRANSFER CHARACTERISTICS
t
Rise Time (Saturated)
12
20
9
μs
μs
μs
μs
R
I = 1.5 mA, V = 5 V, R = 10 kΩ
F
L
(CNCote 3)
t
Fall Time (Saturated)
F
t
t
Propagation Delay Time High−to−Low
Propagation Delay Time Low−to−High
30
30
PHL
PLH
I = 1.5 mA, V = 5 V, R = 10 kΩ
F
L
(CNCote 3)
18
2. Current Transfer Ratio (CTR) = I / I x 100%.
C
F
3. Refer to test circuit setup.
Table 5. ISOLATION CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
5000
VACRMS
VISO
Input−Output Isolation Voltage (Note 4)
f = 60 Hz, t = 1 minutes,
I
≤ 2 μA
I−O
1 x 1011
0.6
Ω
RISO
CISO
Isolation Resistance
Isolation Capacitance
VI−O = 500 VDC
VI−O = 0, f = 1 MHz
1.0
pf
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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3
FOD819 Series
Typical Performance Curves
100
80
60
40
20
0
200
150
100
50
0
−40
−40
−20
0
20
40
60
80
100
120
−20
0
20
40
60
80
100
120
T
A - AMBIENT TEMPERATURE (°C)
TA - AMBIENT TEMPERATURE (°C)
Figure 1. LED Power Dissipation
vs. Ambient Temperature
Figure 2. Collector Power Dissipation
vs. Ambient Temperature
100
6
5
4
3
2
1
0
T
A = 25 °C
T
A = 110 °C
75 °C
IC = 0.5 mA
1 mA
3 mA
50 °C
10
1
5 mA
7 mA
25 °C
0 °C
-30 °C
-40 °C
-55 °C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
2.5
5.0
7.5
10.0
12.5
15.0
VF − FORWARD VOLTAGE (V)
IF − FORWARD CURRENT (mA)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Collector-Emitter Voltage
vs. Forward Current
500
180
160
140
120
100
80
VCE = 5 V
VCE = 5 V
IF = 1.5 mA
T
A = 25 °C
400
300
200
100
0
60
40
20
0
−40
1
10
100
−20
0
20
40
60
80
100
120
IF − FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (°C)
Figure 5. Current Transfer Ratio
vs. Forward Current
Figure 6. Relative Current Transfer Ratio
vs. Ambient Temperature
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4
FOD819 Series
40
30
20
10
0
0.30
0.25
0.20
0.15
0.10
0.05
PC (MAX)
T
A = 25 °C
IF = 30 mA
20 mA
10 mA
5 mA
IF = 8 mA, IC = 2.4 mA
IF = 1.5 mA, IC = 0.2 mA
1.5 mA
0.00
−40
0
2
4
6
8
10
120
120
−20
0
20
40
60
80
100
120
VCE − COLLECTOR−EMITTER VOLTAGE (V)
TA - AMBIENT TEMPERATURE (°C)
Figure 7. Collector Current
vs. Collector-Emitter Voltage
Figure 8. Collector-Emitter Saturation Voltage
vs. Ambient Temperature
100
10
100
VCC = 5 V
VCE = 40 V
IF = 1.5 mA
R
= 10 kΩ
L
Frequency = 1 kHz
1
tPHL
10
0.1
tPLH
0.01
0.001
1
−40
−40
−20
0
20
40
60
80
100
−20
0
20
40
60
80
100
120
T
A - AMBIENT TEMPERATURE (°C)
T
A - AMBIENT TEMPERATURE (°C)
Figure 9. Collector Dark Current
vs. Ambient Temperature
Figure 10. Propagation Delay
vs. Ambient Temperature
1000
100
10
100
10
1
VCC = 5 V
IF = 1.5 mA
= 10 kΩ
VCC = 5 V
IF = 2 mA
= 10 kΩ
R
L
R
L
Frequency = 1 kHz
Frequency = 10 kHz
tPLH
tR
tPHL
tF
1
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
120
T
A - AMBIENT TEMPERATURE (°C)
T
A - AMBIENT TEMPERATURE (°C)
Figure 11. Saturated Rise / Fall Time
vs. Ambient Temperature
Figure 12. Propagation Delay
vs. Ambient Temperature
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5
FOD819 Series
100
10
1
100
VCC = 5 V
IF = 2 mA
VCC = 5 V
IF = 1.5 mA
T
A = 25 °C
R
= 10 kΩ
L
Frequency = 10 kHz
Frequency = 1 KHz
tF
tPLH
tPHL
10
tR
1
−40
−20
0
20
40
60
80
100
120
1
10
100
T
A - AMBIENT TEMPERATURE (°C)
RL - LOAD RESISTANCE (kꢀ )
Figure 13. Collector Dark Current
vs. Ambient Temperature
Figure 14. Propagation Delay
vs. Ambient Temperature
Test Circuit
VCC
RL
PW = 1ms
Duty Cycle = 50%
VO
1
2
4
IF
tR
tF
VO
90%
IF Monitor
3
2V
10%
RM
tPHL
tPLH
Figure 15. Test Circuit for Response Time
Figure 16. Timing Diagram
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6
FOD819 Series
Reflow Profile
Figure 17. Reflow Profile
Table 6.
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (tS) from (Tsmin to Tsmax)
Ramp−up Rate (tL to tP)
200°C
60–120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
6°C / second max.
8 minutes max.
Table 7. ORDERING INFORMATION
Part Number
Package
Packing Method †
FOD819
DIP 4−Pin
Tube (100 units per tube)
FOD819S
SMT 4−Pin (Lead Bend)
SMT 4−Pin (Lead Bend)
Tube (100 units per tube)
FOD819SD
FOD819300
FOD8193S
FOD8193SD
FOD819300W
Tape and Reel (1,000 units per reel)
Tube (100 units per tube)
DIP 4−Pin, DIN EN/IEC60747−5−5 option
SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
DIP 4−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
Tube (100 units per tube)
Tape and Reel (1,000 units per reel)
Tube (100 units per tube)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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7
FOD819 Series
PACKAGE DIMENSIONS
PDIP4 4.6 x 6.5, 2.54P
CASE 646CD
ISSUE O
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8
FOD819 Series
PDIP4 4.6 x 6.5, 2.54P
CASE 646CA
ISSUE O
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9
FOD819 Series
PDIP4 GW
CASE 709AH
ISSUE A
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10
FOD819 Series
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FOD819/D
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