FOD8320V [ONSEMI]
高抗扰性,2.5A 输出电流,门极驱动光耦合器,采用 Optoplanar® 宽体 SOP 5 引脚封装;型号: | FOD8320V |
厂家: | ONSEMI |
描述: | 高抗扰性,2.5A 输出电流,门极驱动光耦合器,采用 Optoplanar® 宽体 SOP 5 引脚封装 驱动 光电 |
文件: | 总19页 (文件大小:1107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2014 年 11 月
FOD8320
高抗噪能力、 2.5 A 输出电流、栅极驱动光电耦合器,采用
Optoplanar® 宽体 SOP 5 引脚
特性
描述
■ Fairchild 的 Optoplanar® 封装技术提供可靠的高电压隔
离、超过 10 mm 的爬电和间隙距离以及 0.5 mm 的内
部绝缘距离,同时还提供紧凑的尺寸
FOD8320 是一个 2.5 A 的输出电流栅极驱动光电耦合器,
可驱动中等功率的 IGBT/MOSFET。它非常适用于快速开
关驱动在电机控制逆变器应用以及高性能电源系统中使用
的功率 IGBT 和 MOSFET。
■ 用于中等功率 IGBT/MOSFET 的 2.5 A 输出电流驱动
能力
FOD8320 采用 Fairchild 的 Optoplanar® 共面封装技术和
优化的 IC 设计,实现了高绝缘电压和高抗噪能力。
– P 沟道 MOSFET 在输出级可实现接近供电轨的输出
电压摆幅
它是由与具有高速驱动器的集成电路进行光耦合的铝砷化
镓 (AlGaAs) 发光二极管 (LED) 组成,可实现推挽式
MOSFET 输出级。该器件包含在一个宽体 5 引脚小型塑料
封装中。
■ 35 kV/µs 最小共模抑制
■ 宽电源电压范围:15 V 至 30 V
■ 在整个工作温度范围内可快速开关:
– 400 ns 最大传播延迟
功能示意图
– 100 ns 最大脉宽失真度
■ 具有滞回的欠压闭锁 (UVLO)
■ 扩展工业温度范围:-40°C
■ 安全和法规认证:
至 100°C
V
V
V
1
3
6
5
4
ANODE
DD
– UL1577、 5,000 VRMS 1 分钟
– DIN EN/IEC60747-5-5, 1,414 V 峰值工作
绝缘电压
O
应用
CATHODE
SS
■ AC 和无刷 DC 电机驱动
■ 工业变频器
图 1. 原理图
■ 不间断电源
■ 感应加热
■ 隔离 IGBT/ 功率 MOSFET 栅极驱动
相关资源
■ FOD3120,高抗噪能力、 2.5 A 输出
电流、栅极驱动光电耦合器数据手册
■ www.fairchildsemi.com/products/opto/
图 2. 封装外形
©2010 飞兆半导体公司
FOD8320 Rev.1.0.7
www.fairchildsemi.com
真值表
V
V
– V “ 正向 ” (导通)
V
– V “ 正向 ” (关断)
LED
O
DD
SS
DD
SS
关
0 V 至 30 V
0 V 至 11.5 V
11.5 V 至 14.5 V
14.5 V 至 30 V
0 V 至 30 V
0 V 至 10 V
10 V 至 13 V
13 V 至 30 V
低
导通
导通
导通
低
转换
高
引脚配置
1
6
V
ANODE
DD
5
V
O
3
4
CATHODE
V
SS
图 3. 引脚配置
引脚定义
引脚号
名称
描述
1
3
4
5
6
阳极
阴极
VSS
VO
LED 阳极
LED 阴极
负极电源电压
输出电压
VDD
正向电源电压
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
2
安全性和绝缘标准
根据 DIN EN/IEC60747-5-5,此光电耦合器仅适用于安全极限数据之内的 “ 安全电气绝缘 ”。通过保护性电路确保各项
安全标准达标。
符号
参数
安装标准符合 DIN VDE 0110/1.89 表 1
用于额定市电电压 < 150 VRMS
用于额定市电电压 < 300 VRMS
用于额定市电电压 < 450 VRMS
用于额定市电电压 < 600 VRMS
气候分类
最小值
典型值 最大值 单位
I–IV
I–IV
I–IIII
I–III
40/100/21
2
污染等级 (DIN VDE 0110/1.89)
相比漏电起痕指数
CTI
175
输入至输出测试电压,方法 b, VIORM x 1.875 = VPR, 100%
生产测试, tm = 1 s,局部放电 < 5 pC
2651
Vpeak
Vpeak
VPR
输入至输出测试电压,方法 a, VIORM x 1.6 = VPR,类型和样
品测试, tm = 10 s,局部放电 < 5 pC
2262
VIORM
VIOTM
1414
8000
10.0
10.0
0.5
Vpeak
Vpeak
mm
最大工作绝缘电压
最高允许过电压
外部爬电距离
mm
外部绝缘间隙
mm
绝缘厚度
安全极限值 – 发生故障时允许的最大值
壳体温度
TS
IS,INPUT
PS,OUTPUT
RIO
150
200
600
109
°C
mA
mW
Ω
输入电流
输出功率
TS, VIO = 500 V 时的绝缘阻抗
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
3
绝对最大额定值
应力超过绝对最大额定值,可能会损坏器件。在超出推荐的工作条件和应力的情况下,该器件可能无法正常工作,所以
不建议让器件在这些条件下工作。此外,长期在高于推荐的工作条件下工作,会影响器件的可靠性。绝对最大额定值仅
为额定应力值。除非另有说明, TA = 25°C。
符号
TSTG
TOPR
TJ
参数
数值
单位
°C
存储温度
工作温度
结温
-40 至 +125
-40 至 +100
-40 至 +125
°C
°C
引脚焊接温度
TSOL
260, 10 s
°C
请参考第 15 页的回流焊温度曲线。
平均输入电流
IF(AVG)
F
25
50
mA
kHz
V
工作频率
VR
5.0
3.0
反向输入电压
峰值输出电流 (1)
IO(PEAK)
VDD
A
V
电源电压
0 至 35
0 至 VDD
500
VO(PEAK)
tR(IN), tF(IN)
PDI
V
峰值输出电压
ns
输入信号上升和下降时间
输入功耗 (2)(4)
45
mW
mW
输出功耗 (3)(4)
PDO
500
注意:
1. 最大脉宽 = 10 µs,最大占空比 = 0.2%。
2. 在整个工作温度范围内无需降额。
3. 线性降额,从额定值 5.2 mW/°C, 25°C 开始。
4. 不建议在这些条件下运行。如果所经受的条件超出额定值,器件可能出现永久损害。
推荐工作条件
推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件,以确保器件的最佳性能达到数据表中的规格。
飞兆不建议超出额定或依照绝对最大额定值进行设计。
符号
TA
参数
最小值
最大值
100
30
单位
°C
-40
16
7
工作环境温度
电源电压
VDD – VSS
IF(ON)
V
16
mA
V
输入电流 (ON)
输入电压 (OFF)
VF(OFF)
0
0.8
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
4
绝缘特性
应用于所有推荐的条件,典型值测量为 TA = 25°C。
符号
参数
工作条件
最小值 典型值 最大值 单位
TA = 25ºC, R.H. < 50%, t = 60 s,
I
VISO
5,000
VRMS
输入输出绝缘电压
I-O ≤ 20 µA, 50 Hz(5)(6)
RISO
CISO
VI-O = 500 V(5)
VI-O = 0 V, Frequency = 1.0 MHz(6)
1011
1
Ω
绝缘电阻
绝缘电容
pF
注意:
5. 器件属于双端器件:引脚 1 和 3 短接在一起,引脚 4、 5 和 6 短接在一起。
6. 5,000 VACRMS 持续 1 分钟相当于 6,000 VACRMS 持续 1 秒钟。
电气特性
应用于所有建议条件,典型值在 VDD = 30 V, VSS = 接地, TA = 25°C 时测得 (除非另有说明)。
符号
VF
参数
工作条件
最小值
典型值
1.5
最大值
单位
图
1.1
1.8
V
19
输入正向电压
IF = 10 mA
Δ(VF / TA)
BVR
-1.8
mV/°C
正向电压温度系数
反向击穿输入电压
输入电容
IR = 10 µA
5
V
pF
A
CIN
f = 1 MHz, VF = 0 V
VOH = VDD – 3 V
60
1.0
2.0
1.0
2.0
2.0
2.5
2.5
2.5
2.5
4, 6
4, 6, 22
7, 9
高电平输出电流 (1)
低电平输出电流 (1)
高电平输出电压 (7)(8)
低电平输出电压 (7)(8)
IOH
VOH = VDD – 6 V
A
VOL = VSS + 3 V
2.0
A
IOL
VOL = VSS + 6 V
A
7, 9, 21
4
IF = 10 mA, IO = -2.5 A
IF = 10 mA, IO = -100 mA
IF = 10 mA, IO = 2.5 A
IF = 0 mA, IO = 100 mA
VDD – 6.25 VDD – 2.5
VDD – 0.5 VDD – 0.1
V
VOH
4, 5, 23
7
VSS + 2.5 VSS + 6.25
V
VOL
VSS + 0.1
VSS + 0.5
8, 24
10, 11,
25
IDDH
IDDL
IFLH
2.9
3.8
mA
mA
mA
高电平电源电流
低电平电源电流
V
O 开路, IF = 7 至 16 mA
O 开路,VF = 0 至 0.8 mA
10, 11,
26
2.8
2.4
3.8
5.0
V
12, 18,
27
阈值输入电流 低电平至高
电平
I
O = 0 mA, VO > 5 V
VFHL
VUVLO+
VUVLO-
IO = 0 mA, VO < 5 V
IF = 10 mA, VO > 5 V
IF = 10 mA, VO < 5 V
0.8
11.5
10.0
V
V
V
V
28
阈值输入电压 高至低
12.7
11.2
1.5
14.5
13.0
20, 29
20, 29
欠压闭锁阈值
UVLOHYS
欠压闭锁阈值滞后
注意:
7. 在此测试中, VOH 在 dc 负载电流为 100 mA 时测得。驱动容性负载时, VOH 将随着 IOH 接近 0 A 而接近 VDD
。
8. 最大脉宽 = 1 ms,最大占空比 = 20%。
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
5
开关特性
应用于所有建议条件,典型值在 VDD = 30 V, VSS = 接地, TA = 25°C 时测得 (除非另有说明)。
符号
参数
工作条件
最小值 典型值 最大值
单位
图
13, 14,
15, 16,
17, 30
逻辑低输出的传播延迟时间 (9)
tPHL
150
150
285
400
400
ns
13, 14,
15, 16,
17, 30
逻辑高输出的传播延迟时 (10)
脉宽失真度 (11)
tPLH
260
25
ns
ns
IF = 7 mA 至 16 mA, Rg =
10 Ω,Cg = 10 nF,f = 10 kHz,
占空比 = 50%
PWD
PDD
(偏斜) 差 (12)
100
250
| tPHL – tPLH
|
任意两个器件之间的传播延迟
-250
输出上升时间
tR
tF
60
60
ns
ns
30
30
(10% 至 90%)
输出下降时间
(90% 至 10%)
tULVO ON
IF = 10 mA, VO > 5 V
IF = 10 mA, VO < 5 V
TA = 25°C, VDD = 30 V,
0.8
0.4
µs
µs
ULVO 导通延迟
ULVO 关断延迟
tULVO OFF
| CMH
|
I
V
F = 7 mA 至 16 mA,
35
35
50
50
kV/µs
kV/µs
31
31
输出高时的共模瞬态抑制性
输出低时的共模瞬态抑制性
CM = 2000 V(13)
TA = 25°C, VDD = 30 V, VF = 0 V,
CM = 2000 V(14)
| CML |
V
注意:
9. 传播延迟 tPHL 的测量是从输入脉冲下降沿的 50% 电平至 VO 信号下降沿的 50% 电平。
10. 传播延迟 tPLH 的测量是从输入脉冲上升沿的 50% 电平至 VO 信号上升沿的 50% 电平。
11. 在任何给定器件上, PWD 被定义为 | tPHL – tPLH |。
12. 在相同的工作条件下,负载相同的任意两个 FOD8320 器件之间 tPHL 和 tPLH 之差。
13. 输出高电平状态下的共模瞬态抑制性是共模脉冲信号后沿上的最大容许负 dVcm/dt, VCM,从而确保输出将保持高
电平状态 (即 VO > 15.0 V)。
14. 输出低电平状态下的共模瞬态抑制性是共模脉冲信号前沿上的最大容许正 dVcm/dt, VCM,从而确保输出将保持低
电平状态 (即 VO < 1.0 V)。
©2010 飞兆半导体公司
FOD8320 Rev.1.0.7
www.fairchildsemi.com
6
典型性能特征
0
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
T
= -40ºC
A
25ºC
100ºC
V
V
= 15 V to 30 V
= 0 V
= 7 mA to 16 mA
= -100 mA
DD
SS
V
V
= 15 V to 30 V
= 0 V
= 7 mA to 16 mA
DD
SS
-3.5
-4.0
I
I
F
O
I
F
f = 200 Hz 0.2% Duty Cycle
-40
-20
0
20
40
60
80
100
0
0.5 1.0
1.5
2.0
2.5
TA – AMBIENT TEMPERATURE (ºC
)
IOH – OUTPUT HIGH CURRENT (A)
Figure 4. Output High Voltage Drop
vs. Output High Current
Figure 5. Output High Voltage Drop
vs. Ambient Temperature
4
3
2
1
0
8
7
6
5
4
3
2
1
0
V
V
= 15 V to 30 V
= 0 V
= 0 mA
DD
SS
I
F
f = 200 Hz 99.8% Duty Cycle
T
A
= 100ºC
25ºC
V
V
= V
= V
– 6 V
– 3 V
O
DD
-40ºC
O
DD
V
V
= 15 V to 30 V
= 0 V
= 7 mA to 16 mA
DD
SS
I
F
f = 200 Hz 0.2% Duty Cycle
0
0.5
1.0
1.5
2.0
2.5
-40
-20
0
20
40
60
80
100
IOL – OUTPUT LOW CURRENT (A)
TA – AMBIENT TEMPERATURE (ºC
)
Figure 6. Output High Current
vs. Ambient Temperature
Figure 7. Output Low Voltage
vs. Output Low Current
0.25
8
6
4
2
0
V
DD
V
SS
= 15 V to 30 V
= 0 V
V
V
V
= 15 V to 30 V
= 0 V
= 0 V or 0.8 V
= 100 mA
DD
SS
F
I
F
= 0 A
0.20
0.15
0.10
0.05
0
f = 200 Hz 99.8% Duty Cycle
I
O
V
V
= V
+ 6V
SS
O
O
= V + 3V
SS
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (ºC
)
TA – AMBIENT TEMPERATURE (ºC)
Figure 8. Output Low Voltage
vs. Ambient Temperature
Figure 9. Output Low Current
vs. Ambient Temperature
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
7
典型性能特征 (续)
3.6
3.6
3.2
2.8
2.4
2.0
I
F
I
F
= 10 mA (for I
= 0 mA (for I
)
V
V
I
= 30 V
= 0 V
= 10 mA (for I
= 0 mA (for I
DDH
)
DD
SS
F
DDL
V
T
= 0 V
= 25ºC
)
SS
A
DDH
)
I
F
DDL
3.2
2.8
2.4
2.0
I
DDH
I
DDH
I
DDL
I
DDL
-40
-20
0
20
40
60
80
100
15
20
25
30
TA – AMBIENT TEMPERATURE (ºC
)
VDD – SUPPLY VOLTAGE (V)
Figure 10. Supply Current
vs. Ambient Temperature
Figure 11. Supply Current
vs. Supply Voltage
4
3.5
3.0
2.5
2.0
1.5
1.0
500
400
300
200
100
I
R
C
= 10 mA
V
V
= 15 V to 30 V
= 0 V
F
DD
SS
= 10 Ω
g
= 10 nF
= 25ºC
Output = Open
g
A
T
f = 10 kHz 50% Duty Cycle
t
PHL
t
PLH
-40
-20
0
20
40
60
80
100
15
18
21
24
27
30
TA – AMBIENT TEMPERATURE (ºC
)
VDD – SUPPLY VOLTAGE (V)
Figure 13. Propagation Delay
vs. Supply Voltage
Figure 12. Low to High Input Current Threshold
vs. Ambient Temperature
500
500
400
300
200
100
V
V
= 30 V
= 0 V
V
V
= 30 V
= 0 V
DD
SS
DD
SS
f = 10 kHz 50% Duty Cycle
R
C
I = 10 mA
F
= 10 Ω
= 10 nF
= 25ºC
f = 10 kHz 50% Duty Cycle
R
C
g
g
400
300
200
100
= 10 Ω
= 10 nF
g
g
T
A
t
t
PHL
PHL
t
PLH
t
PLH
6
8
10
12
14
16
-40
-20
0
20
40
60
80
100
IF – FORWARD LED CURRENT (mA)
TA – AMBIENT TEMPERATURE (ºC
)
Figure 15. Propagation Delay
vs. Ambient Temperature
Figure 14. Propagation Delay
vs. LED Forward Current
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
8
典型性能特征 (续)
500
500
400
300
200
100
V
V
= 30 V
= 0 V
= 10 mA
V
V
= 30 V
= 0 V
DD
SS
DD
SS
I
F
I = 10 mA
F
f = 10 kHz 50% Duty Cycle
C
f = 10 kHz 50% Duty Cycle
R
400
300
200
100
= 10 nF
= 25ºC
= 10
Ω
g
g
T
A
T
A
= 25ºC
t
PHL
t
PHL
t
PLH
t
PLH
0
10
20
30
40
50
0
20
40
60
80
100
Rg – SERIES LOAD RESISTANCE (Ω)
Cg – LOAD CAPACITANCE (nF)
Figure 16. Propagation Delay
vs. Series Load Resistance
Figure 17. Propagation Delay
vs. Load Capacitance
35
30
25
20
15
10
5
100
10
V
= 30 V
DD
= 25ºC
T
A
100ºC
-40ºC
25ºC
1
0.1
0.01
0.001
0
0
1
2
3
4
5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IF – FORWARD LED CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Input Forward Current
vs. Forward Voltage
14
I
F
= 10 mA
T
A
= 25ºC
12
10
8
V
= 11.56 V
V
= 13.12 V
UVLO
UVLO
6
4
2
0
0
5
10
15
20
V
–V – SUPPLY VOLTAGE (V)
DD SS
Figure 20. Under Voltage Lockout
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
9
测试电路
Power Supply
+
+
V
= 15 V to 30 V
+
DD
C2
47 µF
C1
0.1 µF
Pulse Generator
PW = 4.99 ms
Period = 5 ms
Pulse-In
R
= 50 Ω
OUT
1
6
5
4
I
OL
R2
100 Ω
Power Supply
V = 6 V
+
C4
47 µF
C3
0.1 µF
D1
VOL
3
LED-IFmon
To Scope
R1
100 Ω
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8%
V
V
= 15 V to 30 V
= 0 V
DD
SS
I
= 0 mA
F
图 21. IOL 测试电路
Power Supply
+
V
= 15 V to 30 V
+
DD
C2
47 µF
C1
0.1 µF
Pulse Generator
PW = 10 µs
Period = 5 ms
Pulse-In
R
= 50 Ω
OUT
+
–
1
6
Power Supply
V = 6 V
+
C4
47 µF
C3
0.1 µF
I
OH
R2
100 Ω
5
D1
VOH
Current
Probe
3
4
LED-IFmon
To Scope
R1
100 Ω
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2%
V
V
= 15 V to 30 V
= 0 V
DD
SS
I
F
= 7 mA to 16 mA
图 22. IOH 测试电路
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
10
测试电路 (续)
1
3
6
5
4
0.1 µF
+
–
V
V
= 15 V to 30 V
O
DD
I
= 7 mA to 16 mA
F
100 mA
图 23. VOH 测试电路
1
6
0.1 µF
100 mA
+
–
V
= 15 V to 30 V
DD
V
O
5
4
3
图 24. VOL 测试电路
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
11
测试电路 (续)
1
3
6
0.1 µF
+
–
V
= 30 V
DD
I
= 7 mA to 16 mA
V
O
5
F
4
图 25. IDDH 测试电路
1
6
5
4
0.1 µF
+
–
V
= 30 V
DD
+
–
V
V
= -3.0 V to 0.8 V
O
F
3
图 26. IDDL 测试电路
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
12
测试电路 (续)
1
3
6
5
4
0.1 µF
+
–
V
= 15 V to 30 V
DD
V
> 5 V
O
IF
图 27. IFLH 测试电路
1
3
6
5
4
0.1 µF
+
–
+
–
V
O
V
= 15 V to 30 V
DD
V
= –3.0 V to 0.8 V
F
图 28. IFHL 测试电路
1
3
6
5
4
0.1 µF
+
–
15 V or 30 V
V
= 5 V
I
= 10 mA
O
F
V
Ramp
DD
图 29. UVLO 测试电路
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
13
测试电路 (续)
1
3
6
5
4
0.1 µF
V
O
+
–
V
= 15 V to 30 V
+
–
DD
Rg = 10 Ω
Probe
50 Ω
f = 10 kHz
DC = 50%
Cg = 10 nF
I
F
t
R
t
F
90%
50%
10%
V
OUT
t
t
PHL
PLH
图 30. tPHL、 tPLH、 tR 和 tF 测试电路和波形
I
F
A
B
1
3
6
5
4
0.1 µF
+
–
+
–
V
5 V
O
V
= 30 V
DD
+ –
V
= 2,000 V
CM
V
CM
0V
V
Δt
V
O
OH
Switch at A: I = 10 mA
F
V
O
V
OL
Switch at B: I = 0 mA
F
图 31. CMR 测试电路与波形
©2010 飞兆半导体公司
FOD8320 Rev.1.0.7
www.fairchildsemi.com
14
回流焊数据
Maximum Ramp-up Rate = 3°C/s
Maximum Ramp-down Rate = 6°C/s
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
T
smax
t
L
Preheat Area
T
smin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
特征
无铅装配数据
150°C
最低温度 (Tsmin
)
200°C
最高温度 (Tsmax
)
时间 (tS) (Tsmin 至 Tsmax
斜升率 (tL 至 tP)
液态温度 (TL)
)
60 s 至 120 s
3°C/ 秒 (最大值)
217°C
保持在 (tL) 以上的时间 (tL)
体封装温度峰值
60 s 至 150 s
260°C +0°C / –5°C
30 s
时间 (tP) 在 260°C 中的 5°C 内
斜降率 (TP 至 TL)
6°C/s (最大值)
8 分钟 (最大值)
25°C 至峰值温度的时间
图 32. 回流焊数据
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
15
订购信息
器件编号
封装
包装方法
卷管 (每卷管 100 装)
FOD8320
宽体 SOP 5 引脚
宽体 SOP 5 引脚
FOD8320R2
FOD8320V
FOD8320R2V
卷带和卷盘 (每卷 1000 装)
卷管 (每卷管 100 装)
宽体 SOP 5 引脚, DIN EN/IEC60747-5-5 选项
宽体 SOP 5 引脚, DIN EN/IEC60747-5-5 选项
卷带和卷盘 (每卷 1000 装)
根据 JEDEC:J-STD-020B 标准, J-STD-020B 标准。
标识信息
1
3
2
V
8320
8
W
D X YY KK
6
5
4
7
定义
1
2
3
Fairchild 徽标
器件号,例如, “8320” 代表 FOD8320
DIN EN/IEC60747-5-5 选项 (只有组件订购附带此选项时
出现)
4
5
6
7
8
工厂代码,例如, “D”
上一个数字年份代码,例如, “C” 代表 2012
两位数工作周数,从 “01” 到 “53”
批量可追溯性代码
封装装配代码, W
©2010 飞兆半导体公司
www.fairchildsemi.com
FOD8320 Rev.1.0.7
16
0.20 C A-B
D
3.95
0.60
2X
1.27
4
6
1.38
1.27
A
6
4
4.60
11.38
11.80
11.60
9.20
1
3
0.10 C D
3
1
2X
0.33 C
PIN ONE
INDICATOR
2.54
2.54
0.25
C A-B D
B
5X
LAND PATTERN
RECOMMENDATION
0.51
0.31
5 TIPS
2.65
2.45
A
0.10 C
SEATING
PLANE
2.95 MAX
0.10 C
0.30
0.10
5X
C
NOTES: UNLESS OTHERWISE SPECIFIED
1.35
1.15
A) THIS PACKAGE DOES NOT
CONFORM TO ANY STANDARD.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
(R0.54)
C) DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS
GAUGE
D) DRAWING CONFORMS TO ASME
Y14.5M-1994
E) DRAWING FILE NAME:
MKT-M05AREV3
PLANE
0.25
0.19
8°
0°
0.74
0.44
0.25
(R1.29)
C
SEATING
PLANE
SCALE: 3.2:1
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