FOD8482 [ONSEMI]

Optically Isolated Intelligent Power Module (IPM) Driver in Stretched Body SOP 6-Pin;
FOD8482
型号: FOD8482
厂家: ONSEMI    ONSEMI
描述:

Optically Isolated Intelligent Power Module (IPM) Driver in Stretched Body SOP 6-Pin

输出元件 光电
文件: 总13页 (文件大小:1016K)
中文:  中文翻译
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FOD8480, FOD8482  
Optically Isolated  
Intelligent Power Module  
(IPM) Driver in Stretched  
Body SOP 6-Pin  
www.onsemi.com  
Description  
The FOD8480 and FOD8482 are low power optocouplers, which  
support isolated interface to Intelligent Power Module (IPM)  
communicating digital control signals from the controller to the IPM,  
without conducting ground loops or hazardous voltages.  
The FOD848x Series, packaged in a stretched body 6pin small  
outline plastic package, consists of an aluminum gallium arsenide  
(AlGaAs) light emitting diode and an integrated high gain photo  
detector. The detector has a detector threshold with hysteresis. The  
hysteresis provides differential mode noise immunity and eliminates  
the potential for output signal chatter. Its noninverting output is  
designed as totem pole, which does not require any pullup resistor.  
SOIC6  
SUFFIX  
CASE 751EL  
SOIC6 W  
SUFFIX  
CASE 751EM  
MARKING DIAGRAM  
The FOD8482 has a lower threshold input current, I  
, at 3.0 mA  
FLH  
maximum. For the complete FOD848x Series, the Electrical and  
Switching Characteristics are guaranteed over the extended industrial  
8480  
temperature range of 40°C to 100°C and a V  
range of 4.5 V to  
range allow compatibility with TTL,  
VYYWWP  
DD  
30 V. Low I and wide V  
F
DD  
LSTTL, and CMOS logic and result in lower power consumption  
compared to other high speed optocouplers.  
8480 or 8482 = Specific Device Number  
V
= DIN EN/IEC6074755 Option  
= Two Digit Year Code  
YY  
WW  
P
Features  
= Two Digit Work Week  
= Assembly Package Code  
Maximum Threshold Input Current, I  
FOD8480 – 5.5 mA  
,
FLH  
FOD8482 – 3.0 mA  
PIN CONNECTIONS  
FOD8480T and FOD8482T 8 mm Creepage and Clearance  
Distance, and 0.4 mm Insulation Distance to Achieve Reliable and  
High Voltage Insulation  
High Noise Immunity Characterized by Common Mode Transient  
Immunity (CMTI)  
20 kV/ms Minimum CMTI  
Wide Operating Voltage Range, 4.5 V to 30 V  
Specifications Guaranteed Over Extended Industrial Temperature  
Range, 40 to 100°C  
TRUTH TABLE  
Safety and Regulatory Approvals  
LED  
Vo  
UL1577, 5,000 VAC  
for 1 Min.  
RMS  
DINEN/IEC6074755, 1,140 V Peak Working Insulation  
Off  
On  
Low  
High  
Voltage  
Typical Applications  
Isolating Intelligent Power Module  
Isolating Industrial Communication Interface  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 10 of this data sheet.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
August, 2019 Rev. 1  
FOD8480/D  
FOD8480, FOD8482  
Table 1. SAFETY AND INSULATION RATINGS for Stretched Body SOP 6Pin  
As per DIN_EN/IEC6074755. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance  
with the safety ratings shall be ensured by means of protective circuits.  
FOD8480  
FOD8482  
FOD8480T  
FOD8482T  
Parameter  
Symbol  
Unit  
Installation Classifications per DIN VDE 0110/1.89 Table 1, for rated  
main voltage <150 Vrms  
IIV  
IIV  
for rated main voltage <300 Vrms  
for rated main voltage <450 Vrms  
for rated main voltage <600 Vrms  
Climatic Classification  
IIV  
IIII  
IIV  
IIV  
IIII  
IIII  
40/100/21  
2
40/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
175  
Input to Output Test Voltage, Method b, VIORM*1.875=V , 100% Pro-  
V
PR  
1,671  
2,137  
V
peak  
PR  
duction Test with t =1 sec,Partial Discharge <5 pC  
m
Input to Output Test Voltage, Method a, VIORM*1.6 = V , Type and  
V
PR  
1,426  
1,824  
V
peak  
PR  
Sample Test with t = 10 sec, Partial Discharge <5 pC  
m
Max Working Insulation Voltage  
Highest Allowable Over Voltage  
External Clearance  
V
891  
6,000  
7.0  
1,140  
8,000  
8.0  
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
W
External Creepage  
8.0  
8.0  
Insulation thickness  
0.4  
0.4  
9
9
Insulation Resistance at T ,V = 500 V  
R
IO  
10  
10  
S
IO  
Safety Limit ValuesMaximum Values allowed in the event of a failure,  
Case Temperature  
Input Current  
Output Power  
T
150  
200  
600  
150  
200  
600  
°C  
mA  
mW  
S
I
S,INPUT  
P
S,OUTPUT  
www.onsemi.com  
2
FOD8480, FOD8482  
Table 2. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Value  
Units  
°C  
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
40 to +125  
40 to +100  
40 to +125  
260 for 10 sec  
STG  
OPR  
T
°C  
T
J
°C  
T
SOL  
Lead Solder Temperature (Refer to Reflow Temperature Profile)  
°C  
INPUT CHARACTERISTICS  
I
Average Forward Input Current  
Reverse Input Voltage  
20  
5.0  
35  
mA  
V
F
V
R
PD  
Input Power Dissipation (Notes 1, 3)  
mW  
I
OUTPUT CHARACTERISTICS  
V
Supply Voltage  
0 to 35  
V
V
DD  
V
Output Voltage  
0.5 to V  
25  
O
DD  
I
Average Output Current  
Output Power Dissipation (Notes 2, 3)  
mA  
mW  
O
PD  
300  
O
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
Table 3. RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Ambient Operating Temperature  
Min  
40  
4.5  
0
Max  
+100  
30  
Unit  
°C  
T
A
V
DD  
Supply Voltages (Note 4)  
V
V
F(OFF)  
I
F(ON)  
Forward Input Voltage (OFF)  
Forward Input Current (ON) (Note 5)  
0.8  
V
6.6  
3.6  
10  
mA  
mA  
7.5  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
1. No derating required across operating temperature range.  
2. Derate linearly from 25°C at a rate of 2.87 mW/°C.  
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside  
these ratings.  
4. 0.1 mF bypass capacitor must be connected between Pin 4 and 6.  
5. For FOD8480, the initial switching threshold is 5.5 mA or less. It is recommended that 6.6 mA be used to permit at least a 20% CTR  
degradation guard band. For FOD8482, the initial switching threshold is 3.0 mA or less. It is recommended that 3.6 mA be used to permit  
at least a 20% CTR degradation guard band.  
Table 4. ISOLATION CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at T = 25°C)  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
VAC  
RMS  
V
ISO  
InputOutput Isolation Voltage  
T = 25°C, R.H. < 50%, t = 1.0 min,  
5,000  
A
IO  
I
2 mA (Notes 6, 7)  
11  
R
C
Isolation Resistance  
Isolation Capacitance  
V
= 500 V (Note 6)  
IO  
10  
W
ISO  
ISO  
V
IO  
= 0 V, freq = 1.0 MHz (Note 6)  
1.0  
pF  
6. Device is considered a two terminal device: Pins 1, 2 and 3 are shorted together and Pins 4, 5, and 6 are shorted together.  
7. 5,000 VAC for 1 minute duration is equivalent to 6,000 VAC for 1 second duration.  
RMS  
RMS  
www.onsemi.com  
3
 
FOD8480, FOD8482  
Table 5. ELECTRICAL CHARACTERISTICS (Apply over all recommended conditions, T = 40°C to +100°C, 4.5 V V 30 V,  
A
DD  
FOD8480: I  
= 6 mA to 10 mA, FOD8482: I  
= 4 mA to 7 mA, V  
= 0 to 0.8 V, unless otherwise specified. Typical value is  
F(ON)  
A
F(ON)  
F(OFF)  
measured at T = 25°C and V = 5 V.)  
DD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
INPUT CHARACTERISTICS  
V
Forward Voltage  
I = 6 mA  
1.4  
1.75  
V
V
F
F
BV  
Reverse Breakdown Voltage  
Input Capacitance  
I
R
= 10 mA  
5.0  
R
C
V = 0, f = 1 MHz  
F
60  
1.4  
2.2  
pF  
IN  
DV /DT  
Input Diode Temperature Coefficient I = 6 mA  
mV/°C  
mA  
mA  
mA  
F
A
F
I
Threshold Input Current  
Low to High  
FOD8480  
FOD8482  
5.5  
3.0  
FLH  
1.45  
0.3  
I
Input Current Hysteresis  
V
DD  
= 5 V  
HYS  
OUTPUT CHARACTERISTICS  
I
Logic High Output Supply  
Current  
V
V
V
V
V
V
V
V
= 5 V, I = 10 mA  
1.6  
1.8  
1.6  
1.8  
2.5  
2.5  
2.5  
2.5  
80  
80  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
DDH  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
F
= 30 V, I = 10 mA  
F
I
Logic Low Output Supply  
Current  
= 5 V, I = 0 mA  
F
DDL  
OSH  
= 30 V, I = 0 mA  
F
I
Logic High Short Circuit Output  
Current  
= 5.5 V, I = 10 mA, V = GND  
F O  
= 30 V, I = 10 mA, V = GND  
F
O
I
Logic Low Short Circuit Output  
Current  
= V = 5.5 V, V = 0 V  
80  
80  
OSL  
O
F
= V = 30 V, V = 0 V  
O
F
V
Logic High Output Voltage  
I
I
I
= 2.6 mA  
= 0.4 mA  
V
V
0.1 V 0.04  
DD  
OH  
OH  
OH  
OL  
DD  
DD  
0.1 V 0.01  
V
DD  
V
Logic Low Output Voltage  
= 6.4 mA, V = 0 V  
0.5  
V
OL  
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
Table 6. SWITCHING CHARACTERISTICS (Apply over all recommended conditions, T = 40°C to +100°C, 4.5V V 30 V,  
A
DD  
FOD8480: I  
= 6 mA to 10 mA, FOD8482: I  
= 4 mA to 7 mA, V  
= 0 to 0.8 V, unless otherwise specified. Typical value is  
F(ON)  
A
F(ON)  
F(OFF)  
measured at T = 25°C and V = 5 V.)  
DD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
1
Units  
Mbit/s  
ns  
Date Rate  
t
Propagation Delay Time to Logic  
Low Output  
With peaking capacitor, C = 15 pF  
130  
100  
300  
PHL  
L
t
Propagation Delay Time to Logic  
High Output  
With peaking capacitor, C = 15 pF  
300  
250  
150  
ns  
ns  
PLH  
L
PWD  
Pulse Width Distortion,  
With peaking capacitor, C = 15 pF  
L
|t  
t  
PLH  
|
PHL  
t
Propagation Delay Skew (Note 8)  
Output Rise Time (10% 90%)  
Output Fall Time (90% 10%)  
With peaking capacitor, C = 15 pF  
ns  
ns  
PSK  
L
t
R
15  
10  
40  
t
F
ns  
|CM |  
Common Mode Transient  
Immunity at Output High  
I = I ,  
F(ON)  
O
A
20  
20  
kV/ms  
H
F
V
> 2.0 V, V  
= 1000 V,  
CM  
T = 25°C (Note 9)  
|CM |  
Common Mode Transient  
Immunity at Output Low  
I = 0 mA,  
40  
kV/ms  
L
F
V
O
< 0.8 V, V  
= 1000 V,  
CM  
T = 25°C (Note 9)  
A
8. t  
is equal to the magnitude of the worst case difference in t  
and/or t  
that will be seen between any two units from the same  
PLH  
PSK  
PHL  
manufacturing date code that are operated at same case temperature ( 5°C), at same operating conditions, with equal loads (CL = 15 pF),  
and with an input rise time less than 5 ns.  
9. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode  
impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable  
positive dVcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low.  
www.onsemi.com  
4
 
FOD8480, FOD8482  
TYPICAL CHARACTERISTICS  
Figure 1. Typical Logic Low Output Voltage vs.  
Figure 2. Typical Logic High Output Current  
vs. Temperature  
Temperature  
Figure 3. Typical Output Voltage vs. Forward  
Input Current (FOD8480)  
Figure 4. Typical Output Voltage vs. Forward  
Input Current (FOD8482)  
Figure 5. Typical Input Diode Forward  
Characteristic  
Figure 6. Typical Propagation Delay vs.  
Temperature  
www.onsemi.com  
5
FOD8480, FOD8482  
TYPICAL CHARACTERISTICS  
Figure 7. Typical Logic High Output Voltage  
Figure 8. Typical Propagation Delay vs. Supply  
Voltage  
vs. Supply Voltage  
Figure 9. VOH vs. IOH Across Temperatures  
Figure 10. VOL vs. IOL Across Temperatures  
www.onsemi.com  
6
FOD8480, FOD8482  
Figure 11. Test Circuit for Propagation Delay, Rise Time and Fall Time  
www.onsemi.com  
7
FOD8480, FOD8482  
Figure 12. Test Circuit for Instantaneous CommonMode Rejection Voltage  
www.onsemi.com  
8
FOD8480, FOD8482  
Reflow Profile  
Maximum Rampup Rate = 3°C/s  
Maximum Rampdown Rate = 6°C/s  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
T
smax  
t
L
Preheat Area  
T
smin  
t
s
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
Profile Freature  
PbFree Assembly Profile  
150°C  
Temperature Minimum (Tsmin  
)
Temperature Maximum (Tsmax  
)
200°C  
Time (tS) from (Tsmin to Tsmax  
)
60 s to 120 s  
Rampup Rate (tLto tP)  
3°C/second maximum  
217°C  
Liquidous Temperature (TL)  
Time (tL) Maintained Above (TL)  
Peak Body Package Temperature  
Time (tP) within 5°C of 260°C  
60 s to 150 s  
260°C +0°C / 5°C  
30 s  
RampDown Rate (T to TL)  
6°C/s maximum  
8 minutes maximum  
P
Time 25°C to Peak Temperature  
Figure 13. Reflow Profile  
www.onsemi.com  
9
FOD8480, FOD8482  
ORDERING INFORMATION  
Part Number  
Package  
Packing Method  
Tube (100 units per tube)  
FOD8480  
Stretched Body SOP 6Pin  
Stretched Body SOP 6Pin  
FOD8480R2  
FOD8480V  
Tape and Reel (1,000 units per reel)  
Tube (100 units per tube)  
Stretched Body SOP 6Pin,  
DIN EN/IEC6074755 Option  
FOD8480R2V  
Stretched Body SOP 6Pin,  
DIN EN/ IEC6074755 Option  
Tape and Reel (1,000 units per reel)  
FOD8480T  
Stretched Body SOP 6Pin, Wide Lead  
Stretched Body SOP 6Pin, Wide Lead  
Tube (100 units per tube)  
FOD8480TR2  
FOD8480TV  
Tape and Reel (1,000 units per reel)  
Tube (100 units per tube)  
Stretched Body SOP 6Pin, Wide Lead,  
DIN EN/IEC6074755 Option  
FOD8480TR2V  
Stretched Body SOP 6Pin, Wide Lead,  
DIN EN/ IEC6074755 Option  
Tape and Reel (1,000 units per reel)  
*All packages are lead free per JEDEC: JSTD020B standard.  
www.onsemi.com  
10  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC6  
CASE 751EL  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13745G  
SOIC6  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC6 W  
CASE 751EM  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13749G  
SOIC6 W  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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