FOD8802B_技术文档

Dual Channel OptoHiTt

Series, High-Temperature

Phototransistor

Optocoupler in Small

Outline 8-Pin Package

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FOD8802 Series

Description

The FOD8802 dual channel optocoupler is a best−in−class

phototransistor, optocoupler utilizing ON Semiconductor

leading−edge proprietary process technology to achieve high

operating temperature performance, up to 125°C. It consists of two

aluminum gallium arsenide (AlGaAs) infrared light emitting diode

optically coupled to two phototransistors, in a small outline, 8−pin

SOIC package. It delivers consistent current transfer ratio at very low

input current over temperature. The AlGaAs light ouput degradation

performance is significantly better than the commodity optocoupler

products that uses the standard GaAs, extending lifetime and reducing

the guardband requirements to compensate for temperature drift. The

SOIC8

M SUFFIX

CASE 751DZ

MARKING DIAGRAM

input−output isolation voltage, Viso, is rated at 2500 VAC

.

RMS

Features

• Excellent CTR Linearity at High Temperature

• CTR at Very Low Input Current, I

F

• High Isolation Voltage Regulated by Safety Agency, UL1577,

1.

2.

3.

4.

5.

6.

ON = Corporate Name

2500 VAC

for 1 min.

RMS

8802x = Device Number

V = DIN EN/IEC60747−5−5 Option

X = One−Digit Year Code

YY = Digit Work Week

• Applicable to Infrared Ray Reflow, 260°C

• These are Pb−Free Devices

S = Assembly Package Code

Typical Applications

• Primarily Suited for DC−DC Converters

• For Ground Loop Isolation, Signal to Noise Isolation

• Communications – Adapters, Chargers

PIN CONNECTIONS

• Consumer – Appliances, Set Top Boxes

• Industrial – Power Supplies, Motor Control, Programmable Logic

Control

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 9 of this data sheet.

1

Publication Order Number:

April, 2020 − Rev. 0

FOD8802/D

FOD8802 Series

Table 1. SAFETY AND INSULATION RATINGS

As per DIN_EN/IEC60747−5−5. this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with

the safety ratings shall be ensured by means of protective circuits.

Parameter

Characteristics

< 150 V_RMS

< 300 V_RMS

I–IV

I–III

Installation Classifications per DIN VDE 0110/1.89 Table 1,

For Rated Mains Voltage

Climatic Classification

40/125/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

175

Symbol

Parameter

Value

Unit

VPR

Input−to−Output Test Voltage, Method A, V_IORMx 1.6 = V_PR, Type and Sample

Test with t_m= 10 s, Partial Discharge < 5 pC

904

Vpeak

Input−to−Output Test Voltage, Method B, V_IORMx 1.875 = V_PR, 100% Production

Test with t_m= 1 s, Partial Discharge < 5 pC

Vpeak

1060

Maximum Working Insulation Voltage

Highest Allowable Over−Voltage

External Creepage

565

4,000

w 4

w 0.4

150

VIORM

VIOTM

Vpeak

mm

External Clearance

mm

DTI

T_S

Distance Through Insulation (Insulation Thickness)

Case Temperature (Note 1)

mm

°C

Input Current (Note 1)

200

mA

IS,INPUT

PS,OUTPUT

Output Power (Note 1)

300

mW

9

W

RIO

Insulation Resistance at T_S, V_IO= 500 V (Note 1)

> 10

1. Safety limit values – maximum values allowed in the event of a failure.

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2

FOD8802 Series

Table 2. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

A

Symbol

Parameter

Value

Units

°C

T

STG

Storage Temperature

Operating Temperature

Junction Temperature

−40 to +150

−40 to +125

−50 to +150

260 for 10 sec

T

OPR

°C

T

J

°C

T

SOL

Lead Solder Temperature (Refer to Reflow Temperature Profile)

°C

EMITTER

I

Continuous Forward Current

Reverse Input Voltage

20

6

mA

V

F(average)

V

R

PD

Power Dissipation (Note 2)

40

mW

LED

DETECTOR

I

Continuous Collector Current

Collector−Emitter Voltage

30

75

7

mA

V

C(average)

V

CEO

V

ECO

Emitter−Collector Voltage

V

PD

Collector Power Dissipation (Note 2)

150

mW

C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside

these ratings.

Table 3. ELECTRICAL CHARACTERISTICS

Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified). All typical values are measured at T = 25°C.

A

Symbol

Parameter

Forward Voltage

Conditions

Min.

Typ.

1.35

−1.6

Max.

Units

V

F

I = 1 mA

1.0

1.8

V

F

/

DV DT

Forward Voltage Coefficient

I = 1 mA

F

mV/°C

F

A

I

Reverse Current

V

= 6 V

10

mA

pF

V

R

C

Terminal Capacitance

V = 0 V, f = 1 MHz

30

T

BV

I

Collector−Emitter Breakdown Voltage

I

= 0.5 mA, I = 0 mA

130

CEO

C

F

75

7

Emitter−Collector Breakdown Voltage

Collector Dark Current

= 100 mA, I = 0 mA

12

V

ECO

E

F

V

CE

V

CE

V

CE

V

CE

= 75 V, I = 0 mA, T = 25°C

100

50

nA

mA

pF

CEO

F

A

= 50 V, I = 0 mA

F

= 5 V, I = 0 mA

30

F

C

Capacitance

= 0 V, f = 1 MHz

8

CE

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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3

FOD8802 Series

Table 4. TRANSFER CHARACTERISTICS

Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified). T = 25°C unless otherwise specified.

A

Symbol

Parameter

Device

Conditions

I = 1.0 mA, V = 5 V @ T = 25°C

Min.

80

Typ.

120

125

138

195

202

215

300

312

330

108

104

92

Max.

160

Units

F

CE

A

I = 1.0 mA, V = 5 V

35

230

F

CE

FOD8802A

I = 1.6 mA, V = 5 V

40

F

CE

I = 3.0 mA, V = 5 V

45

F

CE

I = 1.0 mA, V = 5 V @ T = 25°C

130

65

260

360

F

CE

A

I = 1.0 mA, V = 5 V

Current Transfer Ratio

(collector−emiiter)

F

CE

CTR

FOD8802B

FOD8802C

FOD8802A

FOD8802B

%

CE

I = 1.6 mA, V = 5 V

70

F

CE

I = 3.0 mA, V = 5 V

75

F

CE

I = 1.0 mA, V = 5 V @ T = 25°C

200

100

110

115

65

400

560

F

CE

A

I = 1.0 mA, V = 5 V

F

CE

I = 1.6 mA, V = 5 V

F

CE

I = 3.0 mA, V = 5 V

F

CE

I = 1.0 mA, V = 0.4 V @ T = 25°C

150

245

380

F

CE

A

I = 1.0 mA, V = 0.4 V

30

F

CE

I = 1.6 mA, V = 0.4 V

25

F

CE

I = 3.0 mA, V = 0.4 V

20

F

CE

I = 1.0 mA, V = 0.4 V @ T = 25°C

90

168

155

132

238

F

CE

A

I = 1.0 mA, V = 0.4 V

45

Saturated Current

Transfer Ratio

F

CE

CTR

%

CE(SAT)

I = 1.6 mA, V = 0.4 V

40

F

CE

(collector−emiiter)

I = 3.0 mA, V = 0.4 V

35

F

CE

I = 1.0 mA, V = 0.4 V @ T = 25°C

140

75

F

CE

A

I = 1.0 mA, V = 0.4 V

F

CE

FOD8802C

I = 1.6 mA, V = 0.4 V

F

CE

65

55

215

177

0.17

I = 3.0 mA, V = 0.4 V

F

CE

I = 1.0 mA, I = 0.3 mA

0.40

F

C

I = 1.6 mA, I = 0.4 mA

0.16

0.15

0.17

0.16

0.18

0.17

0.40

FOD8802A

FOD8802B

FOD8802C

F

C

I = 3.0 mA, I = 0.6 mA

F

C

I = 1.0 mA, I = 0.45 mA

F

C

V

Saturation voltage

CE(SAT)

I = 1.6 mA, I = 0.6 mA

F C

V

I = 3.0 mA, I = 1.0 mA

F

C

I = 1.0 mA, I = 0.75 mA

F

C

I = 1.6 mA, I = 1.0 mA

F

C

I = 3.0 mA, I = 1.6 mA

F

C

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4

FOD8802 Series

Table 5. SWITCHING CHARACTERISTICS

Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified). All typical values are measured at T = 25°C.

A

Symbol

Parameter

Conditions

Min.

Typ.

6

Max.

Units

ms

I = 1.6 mA, V = 5 V, R = 0.75 kΩ

1

20

F

CC

L

t

Turn On Time

Turn Off Time

ON

I = 1.6 mA, V = 5 V, R = 4.7 kΩ

6

ms

F

CC

L

I = 1.6 mA, V = 5 V, R = 0.75 kΩ

1

6

20

ms

F

CC

L

t

OFF

I = 1.6 mA, V = 5 V, R = 4.7 kΩ

40

6

ms

F

CC

L

t_R

Output Rise Time (10% −90%)

Output Fall Time (90% −10%)

I = 1.6 mA, V = 5 V, R = 0.75 kΩ

ms

F

CC

L

t

F

I = 1.6 mA, V = 5 V, R = 0.75 kΩ

7

ms

F

CC

L

Common Mode Rejection Voltage

(Transient Immunity Output High)

I = 0 mA, V = 5 V, R = 4.7kΩ

F CC L

VCM = 500 V (Note 3)

CM

10

kV/ms

H

Common Mode Rejection Voltage

(Transient Immunity Output Low)

I = 1.6 mA, V = 5 V, R = 4.7 kΩ

F

CC

L

CM

L

VCM = 500 V (Note 3)

3. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode

impulse signal, Vcm, to assure that the output will remain high.

Table 6. ISOLATION CHARACTERISTICS

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VAC

V

ISO

Input−Output Isolation Voltage

Freq = 60 Hz, t = 1.0 min,

2,500

RMS

I

≤ 10 mA (Notes 4, 5)

I−O

11

R

C

Isolation Resistance

Isolation Capacitance

V

= 500 V (Note 4)

10

W

ISO

I−O

Frequency = 1 MHz

0.6

pF

4. Device is considered a two terminal device: Pins 1 and 2 are shorted together and Pins 3 and 4 are shorted together.

5. 2,500 VAC for 1 minute duration is equivalent to 3,000 VAC for 1 second duration.

RMS

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5

FOD8802 Series

TEST CIRCUIT

V_CC

R_L

I_F

t_R

t_F

V_O

I_FMonitor

90%

10%

R_M

t_ON

t_OFF

Figure 1. Switching Test Circuit and Waveform

+5 V

R_L= 4.7 kΩ

I_F

+

V_OMonitoring

Node

500 V

V_CM90%

10%

I_F

I_FMonitor

SW

t_R

t_F

V_OH

R_M

V_O(I_F= 0 A)

2 V

V_CM

0.8 V

V_O(I_F= 1.6 mA)

V_OL

Figure 2. Test Circuit for Instantaneous Common−Mode Rejection Voltage

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6

FOD8802 Series

TYPICAL PERFORMANCE CHARACTERISTICS

100

10

1

10

T

_A= 25 °C

V_CE= 5.0 V

V_CE= 0.4 V

1

T

_A= 125 °C

T

_A= 25 °C

T

_A= -40 °C

0.1

0.9

0.1

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1

I_F− FORWARD CURRENT (mA)

10

V_F− FORWARD VOLTAGE (V)

Figure 3. Forward Current vs. Forward Voltage

Figure 4. Collector Current vs. Forward Current

10

1000

V_CE= 5.0 V

T

_A= 25°C

T

_A= 25°C

NORMALIZED TO I_F= 1 mA

1

100

0.1

10

0.1

1

10

1

10

I_F− FORWARD CURRENT (mA)

Figure 5. Current Transfer Ratio vs. Forward

Current

Figure 6. Normalized CTR vs. Forward Current

1.4

V_CE= 5.0 V

1.2

1.0

0.8

0.6

0.4

0.2

I_F= 3.0 mA

I_F= 1.6 mA

1.0

I_F= 1.6 mA

I_F= 1.0 mA

0.8

I_F= 1.0 mA

0.6

0.4

V_CE= 0.4 V

0.2

−40 −20

0

20

40

60

80

100 120 140

−40 −20

0

20

40

60

80

100 120 140

T

_A- AMBIENT TEMPERATURE (°C)

T_A- AMBIENT TEMPERATURE (°C)

Figure 7. Normalized CTR vs. Ambient

Temperature

Figure 8. Normalized CTR vs. Ambient

Temperature

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7

FOD8802 Series

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

100

10

1

180

V_CE= 5.0 V

V

_CE= 5V I_F= 1mA

V

_CE= 5V I_F= 1.6mA

160

140

120

100

80

V

_CE= 5V I_F= 3mA

I_F= 3.0 mA

I_F= 1.6 mA

I_F= 1.0 mA

V

_CE= 0.4V I_F= 1.6mA

V

_CE= 0.4V I_F= 3mA

V_CE= 0.4V I_F= 1mA

0.1

−40

60

−40

−20

0

20

40

60

80

100

120

−20

0

20

40

60

80

100

120

T

_A- AMBIENT TEMPERATURE (°C)

T

_A- AMBIENT TEMPERATURE (°C)

Figure 9. Collector Current vs. Ambient

Temperature

Figure 10. Current Transfer Ratio vs. Ambient

Temperature

100000

0.35

V_CE= 75 V

I_F= 1 mA I_CE= 0.70 mA

I_F= 1.6 mA I_CE= 0.99 mA

10000

1000

100

10

0.30

0.25

0.20

0.15

0.10

0.05

0.00

I_F= 3.0 mA I_CE= 1.55 mA

1

0.1

0.01

−40

−20

0

20

40

60

80

100

120

−40

−20

0

20

40

60

80

100

120

T

_A- AMBIENT TEMPERATURE (°C)

T_A- AMBIENT TEMPERATURE (°C)

Figure 11. Collector Dark Current vs. Ambient

Temperature

Figure 12. Collector−Emitter Saturation

Voltage vs. Ambient Temperature

30

1000

100

10

T

_A= 25 °C

T

_A= 25 °C

V_CE= 5 V

I_F= 1.6 mA

f = 1 kHz

25

20

15

10

5

I_F= 20 mA

I_F= 15 mA

t_OFF

t_F

I_F= 10 mA

I_F= 5 mA

t_ON

t_R

I_F= 1 mA

4

0

1

0

1

2

3

5

1

10

R_L- LOAD RESISTANCE (kꢀ )

100

V_CE− COLLECTOR−EMITTER VOLTAGE (V)

Figure 13. Collector Current vs.

Collector−Emitter Voltage

Figure 14. Switching Time vs. Load Resistance

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8

FOD8802 Series

REFLOW PROFILE

Figure 15. Reflow Profile

Profile Feature

Pb−Free Assembly Profile

150°C

Temperature Min. (Tsmin)

Temperature Max. (Tsmax)

200°C

Time (t ) from (Tsmin to Tsmax)

60–120 seconds

3°C/second max.

217°C

S

Ramp−up Rate (t_Lto t_P)

Liquidous Temperature (T_L)

Time (t_L) Maintained Above (T_L)

Peak Body Package Temperature

Time (t_P) within 5°C of 260°C

Ramp−down Rate (T_Pto T_L)

Time 25°C to Peak Temperature

60–150 seconds

260°C +0°C / –5°C

30 seconds

6°C/second max.

8 minutes max.

ORDERING INFORMATION (Note 6)

Part Number

Package

Packing Method

Tube (100 units per tube)

FOD8802A

Small Outline 8−Pin

FOD8802AR2

FOD8802AV

Tape and Reel (2,500 units per reel)

Tube (100 units per tube)

DIN EN/IEC60747−5−5 Option (pending approval)

FOD8802AR2V

Small Outline 8−Pin

DIN EN/ IEC60747−5−5 Option (pending approval)

Tape and Reel (2,500 units per reel)

6. The product orderable part number system listed in this table also applies to the FOD8802A, FOD8802B, and FOD8802C products.

OptoHiT is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

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9

FOD8802 Series

PACKAGE DIMENSIONS

SOIC8

CASE 751DZ

ISSUE O

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10

FOD8802 Series

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

TECHNICAL SUPPORT

Email Requests to: orderlit@onsemi.com

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative

ON Semiconductor Website: www.onsemi.com

◊

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11


型号：	FOD8802B
厂家：	ONSEMI
描述：	Dual Channel OptoHiT™ Series, High-Temperature Phototransistor Optocoupler In Small Outline 8-Pin Package
文件：	总11页 (文件大小：311K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FOD8802B [ONSEMI]

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