FODM352R2 [ONSEMI]
Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package;
| 型号： | FODM352R2 |
| 厂家： | 
ONSEMI |
| 描述： | Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package |
| 文件： | 总8页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FODM352
Product Preview
Photodarlington
Optocoupler with a
Base-Emitter Resistor in a
4-Pin Full Pitch Mini-Flat
Package
www.onsemi.com
Description
The FODM352 consists of one gallium arsenide (GaAs) infrared
light emitting diode, optically coupled to a photodarlington output
with a base−emitter resistor, in a compact, mini−flat, 4−pin package.
The input−output isolation voltage, V , is rated at 3,750 VAC
.
ISO
RMS
MFP4
CASE 100AP
Features
• Current Transfer Ratio Min 1000% at I = 1 mA,
F
MARKING DIAGRAM
Pin 1
V
CE
= 2 V, T = 25°C
A
• Safety and Regulatory Approvals:
− UL1577, 3750 VAC for 1 min
RMS
− DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
• Applicable to Infrared Reflow, 260°C
ON
352
VXYYR
Typical Applications
• Power Supply Regulators
• Digital Logic Inputs
352
V
X
YY
R
= Specific Device Code
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Work Week
• Microprocessor Inputs
• Programmable Controllers
= Assembly Package Code
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 3
of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2019 − Rev. P0
FODM352/D
FODM352
Table 1. SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
< 150 V
< 300 V
I–IV
I–III
RMS
RMS
Climatic Classification
55/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample
904
V
peak
V
PR
IORM
PR
Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Produc-
1060
V
peak
IORM
PR
tion Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
6,000
w 5
w 5
w 0.4
150
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
T
S
I
Input Current (Note 1)
200
mA
mW
W
S,INPUT
P
Output Power (Note 1)
300
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
> 10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2) TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Units
°C
T
Storage Temperature
Operating Temperature
Junction Temperature
−55 to +150
−55 to +110
−55 to +125
260 for 10 sec
STG
OPR
T
°C
T
J
°C
T
SOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
°C
EMITTER
I
Continuous Forward Current
Reverse Input Voltage
50
6
mA
V
F(average)
V
R
PD
Power Dissipation (Note 3)
70
mW
LED
DETECTOR
I
Continuous Collector Current
Collector−Emitter Voltage
150
300
0.1
mA
V
C(average)
V
CEO
V
ECO
Emitter−Collector Voltage
V
PD
Collector Power Dissipation (Note 3)
150
mW
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
www.onsemi.com
2
FODM352
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise specified
A
Symbol
Parameter
Conditions
Min
Typ
1.2
30
Max
Units
EMITTER
I
V
F
Forward Voltage
F = 10 mA
R = 4 V
V = 0 V, f = 1 kHz
1.4
10
V
I
R
Reverse Current
V
mA
pF
C
Terminal Capacitance
250
T
DETECTOR
BV
Collector−Emitter Breakdown Voltage
Emitter−Collector Breakdown Voltage
Collector Dark Current
I
I
= 0.1 mA, I = 0 mA
300
0.1
V
V
CEO
ECO
C
F
BV
= 10 mA, I = 0 mA
E
F
I
V
= 200 V, I = 0 mA
200
nA
CEO
CE
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. TRANSFER CHARACTERISTICS T = 25°C unless otherwise specified
A
Symbol
Parameter
Collector Current
Conditions
I = 1 mA, V = 2 V
Min
10
Typ
Max
Units
mA
%
I
C
F
CE
CTR
Current Transfer Ratio
I = 1 mA, V = 2 V
1000
5000
F
CE
V
Collector−Emitter Saturation Voltage
I = 20 mA, I = 100 mA
1.2
V
CE(SAT)
F
C
Table 5. SWITCHING CHARACTERISTICS T = 25°C unless otherwise specified
A
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
R
Output Rise Time (10% −90%)
I = 20 mA, V = 2 V,
L
20
100
ms
F
CC
R = 100 W
t
F
Output Fall Time (90% −10%)
I = 20 mA, V = 2 V,
L
100
300
ms
F
CC
R = 100 W
Table 6. ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
Input−Output Isolation Voltage
Freq = 60 Hz, t = 1.0 min,
3,750
VAC
RMS
ISO
I
v 10 mA (Notes 4, 5)
I−O
10
R
C
Isolation Resistance
Isolation Capacitance
V
= 500 V (Note 4)
5 x 10
W
ISO
ISO
I−O
Frequency = 1 MHz
0.6
1.0
pF
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VAC
for 1 minute duration is equivalent to 4,500 VAC
for 1 second duration.
RMS
RMS
ORDERING INFORMATION
Part Number
Package
SOP 4−Pin
SOP 4−Pin
Packing Method
FODM352
Tube (100 units)
FODM352R2
Tape and Reel (2500 units)
Tube (100 units)
FODM352V
SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval)
SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval)
FODM352R2V
Tape and Reel (2500 units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
3
FODM352
TYPICAL CHARACTERISTICS
Figure 1. LED Power Dissipation vs. Ambient
Figure 2. Collector Power Dissipation vs.
Ambient Temperature
Temperature
Figure 3. Collector Emitter Saturation Voltage
vs. Forward Current
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Current Transfer Ratio vs. Forward
Current
Figure 6. Collector Current vs. Collector
Emitter Voltage
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4
FODM352
TYPICAL CHARACTERISTICS
Figure 7. Relative Current Transfer Ratio vs.
Figure 8. Collector Emitter Saturation Voltage
vs. Ambient Temperature
Ambient Temperature
Figure 9. Collector Dark Current vs. Ambient
Temperature
Figure 10. Response Time vs. Load
Resistance
Figure 11. Test Circuit for Switching Time
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5
FODM352
REFLOW PROFILE
Figure 12. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
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6
FODM352
PACKAGE DIMENSIONS
MFP4 3.85X4.4, 2.54P
CASE 100AP
ISSUE O
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7
FODM352
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◊
FODM352/D
相关型号：
FODM352R2V
Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package
ONSEMI
FODM352V
Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package
ONSEMI
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