FODM8061V [ONSEMI]
高抗扰性，3.3V/5V, 10Mbit/sec 逻辑门极输出（开路集电极）光耦合器。;
| 型号： | FODM8061V |
| 厂家： | 
ONSEMI |
| 描述： | 高抗扰性，3.3V/5V, 10Mbit/sec 逻辑门极输出（开路集电极）光耦合器。 局域网 输出元件 光电 |
| 文件： | 总11页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
High Noise Immunity, 3.3ꢀV/5ꢀV,
10 Mbit/sec Logic Gate Output
(Open Collector) Optocoupler
MFP5 4.1X4.4, 2.54P
CASE 100AM
FODM8061
MARKING DIAGRAM
Description
The FODM8061 is a 3.3 V/5 V high−speed logic gate output (open
collector) optocoupler, which supports isolated communications
allowing digital signals to communicate between systems without
conducting ground loops or hazardous voltages. It utilizes onsemi’s
M8061
X
YY M
V
®
patented coplanar packaging technology, OPTOPLANAR , and
optimized IC design to achieve high noise immunity, characterized by
high common mode transient immunity specifications.
M8061 = Device Number
V
= DIN EN/IEC60747−5−5 Option
(Note: Only Appears on Parts Ordered
with This Option )
This optocoupler consists of an AlGaAS LED at the input,
optically coupled to a high speed integrated photo−detector logic gate.
The output of the detector IC is an open collector schottky−clamped
transistor. The coupled parameters are guaranteed over the wide
temperature range of −40°C to +110°C. A maximum input signal
of 5mA will provide a minimum output sink current of 13 mA
(fan out of 8).
X
YY
= One Digit Year Code, e.g., ‘9’
= Two Digit Work Week Ranging
from ‘01’ to ‘53’
M
= Assembly Package Code
FUNCTIONAL SCHEMATIC
Features
• High Noise Immunity Characterized by Common Mode Transient
Immunity (CMTI)
♦ 20 kV/ms Minimum CMTI
ANODE 1
6 VCC
• High Speed
VO
5
♦ 10 Mbit/sec Date Rate (NRZ)
♦ 80 ns Max. Propagation Delay
♦ 25 ns Max. Pulse Width Distortion
♦ 40 ns Max. Propagation Delay Skew
CATHODE 3
4 GND
• 3.3 V LVTTL/LVCMOS Compatibility
• Specifications Guaranteed over 3 V to 5.5 V Supply Voltage and
−40°C to +110°C Temperature Range
TRUTH TABLE
• Safety and Regulatory Approvals
♦ UL1577, 3750 VAC
for 1 min.
RMS
LED
Output
High
♦ DIN EN/IEC60747−5−5
Off
On
Applications
Low
• Microprocessor System Interface
2
♦ SPI, I C
• Industrial Fieldbus Communications
♦ DeviceNet, CAN, RS485
ORDERING INFORMATION
• Programmable Logic Control
See detailed ordering and shipping information on page 9 of
this data sheet.
• Isolated Data Acquisition System
• Voltage Level Translator
• Isolating MOSFET/IGBT Gate Drivers
Related resources
www.onsemi.com/products
www.onsemi.com/FODM611
www.onsemi.com/FODM8071
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2022 − Rev. 3
FODM8061/D
FODM8061
PIN DEFINITIONS
Number
Name
Function Description
1
3
4
5
6
ANODE
CATHODE
GND
Anode
Cathode
Output Ground
Output Voltage
Output Supply Voltage
V
O
V
CC
SAFETY AND INSULATION RATINGS FOR MINI−FLAT PACKAGE (SO5 PIN)
(As per IEC60747−5−5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.)
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Main Voltage <150 Vrms
For Rated Main Voltage <300 Vrms
Climatic Classification
Min
−
Typ
Max
−
Unit
−
−
I−IV
−
−
I−III
−
−
40/110/21
−
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
−
2
−
−
−
CTI
175
1060
−
V
PR
Input to Output Test Voltage, Method b,
−
V
x 1.875 = V , 100% Production Test with t = 1 s,
IORM
PR m
Partial Discharge <5 pC
V
PR
Input to Output Test Voltage, Method a,
848
−
−
V
x 1.5 = V , Type and Sample Test with t = 60 s,
IORM
PR m
Partial Discharge <5 pC
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
565
4000
5.0
−
−
−
−
−
−
−
−
−
−
−
−
V
IORM
peak
V
V
peak
IOTM
mm
mm
mm
°C
External Clearance
5.0
Insulation Thickness
0.5
T
Safety Limit Values, Maximum Values Allowed in the Event of a Failure,
Case Temperature
150
Case
9
R
Insulation Resistance at T , V = 500 V
10
−
−
W
IO
S
IO
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2
FODM8061
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
−40 to +125
−40 to +110
−40 to +125
260 for 10 s
50
Unit
°C
T
Storage Temperature
Operating Temperature
Junction Temperature
STG
OPR
T
°C
T
J
°C
T
SOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
Forward Current
°C
I
F
mA
V
V
R
Reverse Voltage
5.0
V
CC
Supply Voltage
0 to 7.0
V
V
O
Output Voltage
−0.5 to V +0.5
V
CC
I
Average Output Current
50
100
85
mA
mW
mW
O
PD
Input Power Dissipation (Note 1), (Note 2)
Output Power Dissipation (Note 1), (Note 2)
I
PD
O
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. No derate required to 110°C.
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
−40
3.0
0
Max
+110
5.5
0.8
15
Unit
T
A
Ambient Operating Temperature
Supply Voltages (Note 3)
Logic Low Input Voltage
°C
V
CC
, V
DD
V
V
FL
V
I
FH
Logic High Input Current (Note 4)
Logic Low Input Current
6.3
−
mA
mA
I
FL
250
5
N
Fan Out (at R = 1 kW)
−
TTL Loads
W
L
R
Output Pull−up Resistor
330
4k
L
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. 0.1 mF bypass capacitor must be connected between pins 4 and 6.
4. Recommended I is 9.3 mA for operation above T =100°C.
FH
A
ISOLATION CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VAC
V
ISO
Input−Output Isolation Voltage
f = 60 Hz, t = 1.0 min, I
£ 10 mA
3750
−
−
I−O
RMS
(Note 5), (Note 6)
12
R
C
Isolation Resistance
Isolation Capacitance
−
−
10
−
−
W
V
I−O
V
I−O
= 500 V (Note 5)
ISO
ISO
= 0 V f = 1.0 Mhz (Note 5)
0.6
pF
5. Device is considered a two terminal device: Pins 1 and 3 are shorted, and Pins 4, 5, and 6 are shorted together.
6. 3,750 VAC for 1 minute duration is equivalent to 4,500 VAC for 1 second duration.
RMS
RMS
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3
FODM8061
ELECTRICAL CHARACTERISTICS (Apply over all recommended conditions)
(T = −40°C to +110°C, 3.0 V £ V £ 5.5 V, unless otherwise noted)
A
CC
Symbol
Parameter
Test Condition
Min
Typ*
Max
Unit
INPUT CHARACTERISTICS
V
Forward Voltage
I = 10 mA (Figure 1)
1.05
5.0
−
1.45
−
1.8
−
V
V
F
F
BV
Input Reverse Breakdown Voltage
Threshold Input Current
I
R
= 10 mA
R
I
V
OL
= 0.6 V,
(sinking) = 13 mA
T < 85°C, (Figure 2)
3.4
4.2
5.0
7.5
mA
FHL
O
A
I
T
= 85°C to 110 °C
−
A
OUTPUT CHARACTERISTICS
V
I
Logic LOW Output Voltage
Logic HIGH Output Current
I = rated I , I (sinking) = 13 mA (Figure 3)
−
−
−
−
−
−
−
0.4
8.0
2.1
6.0
7.5
4.0
6.0
0.6
50.0
30.0
8.5
V
OL
F
FHL OL
I = 250 mA, V = 3.3 V, (Figure 4)
mA
OH
CCL
CCH
F
O
I = 250 mA, V = 5.0 V, (Figure 4)
mA
F
O
I
Logic LOW Output Supply Current
Logic HIGH Output Supply Current
I = 10 mA, V = 3.3 V, (Figure 5), (Figure 7)
mA
mA
mA
mA
F
CC
I = 10 mA, V = 5.0 V, (Figure 5), (Figure 7)
10.0
7.0
F
CC
I
I = 0 mA, V = 3.3 V, (Figure 6), (Figure 7)
F CC
I = 0 mA, V = 5.0 V, (Figure 6), (Figure 7)
9.0
F
CC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Typical value is measured at T = 25°C and V = 3.3 V.
A
CC
SWITCHING CHARACTERISTICS (Apply over all recommended conditions)
(T = −40°C to +110°C, 3.0 V £ V £ 5.5 V, I = 7.5 mA, unless otherwise noted)
A
CC
F
Symbol
Date Rate
Parameter
Test Condition
Min
−
Typ*
−
Max
10
Unit
Mbps
ns
R = 350 W
L
t
Propagation Delay Time to Logic
Low Output
R = 350 W, C = 15 pF, (Figure 8), (Figure 11)
−
43
80
PHL
L
L
t
Propagation Delay Time to Logic
High Output
R = 350 W, C = 15 pF, (Figure 8), (Figure 11)
−
50
80
ns
PLH
L
L
PWD
Pulse Width Distortion, |t
Propagation Delay Skew
− t
|
R = 350 W, C = 15 pF, (Figure 9)
−
−
7
25
40
−
ns
ns
PHL
PLH
L
L
t
R = 350 W, C = 15 pF, (Note 7)
−
PSK
L
L
t
R
Output Rise Time, (10% to 90%)
Output Fall Time, (90% to 10%)
R = 350 W, C = 15 pF, (Figure 10), (Figure 11)
−
20
10
40
ns
L
L
t
F
R = 350 W, C = 15 pF, (Figure 10), (Figure 11)
−
−
ns
L
L
|CM |
Common Mode Transient
Immunity at Output High
I = 0 mA, V > 0.8 x V , V = 1000 V
CC CM
20
−
kV/ms
H
F
O
(Note 8), (Figure 12)
I = 7.5 mA, V < 0.8 V, V = 1000 V
CM
|CM |
Common Mode Transient
Immunity at Output Low
20
40
−
kV/ms
L
F
O
(Note 8), (Figure 12)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Typical value is measured at T = 25°C and V = 3.3 V.
A
CC
7. t
is equal to the magnitude of the worst case difference in t
and/or t
that will be seen between any two units from the same
PLH
PSK
PHL
manufacturing date code that are operated at same case temperature ( 5°C), at same operating conditions, with equal loads (R = 350 W
L
and C = 15 pF), and with an input rise time less than 5 ns.
L
8. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode
impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable
negative dVcm/dt on the trailing edge of the common pulse signal, Vcm, to assure that the output will remain low.
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4
FODM8061
TYPICAL PERFORMANCE CURVES
100
10
6
I
OL
= 13 mA
5
4
3
2
1
T = 110°C
A
1
V
= 5.0 V
= 3.3 V
CC
T = −40°C
A
T = 25°C
A
0.1
V
CC
0.01
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100 120
100 120
−40 −20
0
20
40
60
80
100 120
V , FORWARD VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
F
A
Figure 1. Input LED Current vs. Forward Voltage
Figure 2. Threshold Input Current vs.
Ambient Temperature
0.60
20
15
10
5
I
I
= 13 mA
I
= 250 mA
V = 3.3 V
OL
F
= 5 mA
F
O
0.55
0.50
0.45
0.40
0.35
V
V
= 3.3 V
= 5.0 V
CC
V
V
= 3.3 V
= 5.0 V
CC
CC
CC
0
−40 −20
0
20
40
60
80
−40 −20
0
20
40
60
80
100 120
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 3. Low Level Output Voltage vs.
Ambient Temperature
Figure 4. Logic High Output Current vs.
Ambient Temperature
10
9
10
8
I
F
= 10 mA
I = 0 mA
F
8
V
V
= 5.0 V
= 3.3 V
CC
7
6
6
V
V
= 5.0 V
= 3.3 V
CC
CC
CC
4
2
0
5
4
3
2
−40 −20
0
20
40
60
80
−40 −20
0
20
40
60
80
100 120
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Typical Logic Low Output Supply
Current vs. Ambient Temperature
Figure 6. Typical Logic High Output Supply
Current vs. Ambient Temperature
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5
FODM8061
TYPICAL PERFORMANCE CURVES (CONTINUED)
10
8
10
Frequency = 5 MHz
Duty Cycle = 50%
I
= 0 mA (for I
), 10 mA (for I
)
F
CCH
CCL
T = 25°C
A
8
6
4
2
0
I
F
= 7.5 mA
R = 350 W
L
6
I
CCL
t
@V = 3.3 V
CC
PLH
t
@V = 3.3 V
CC
PHL
4
I
CCH
t
@V = 5.0 V
CC
PHL
2
t
@V = 5.0 V
CC
PLH
0
3.0
3.5
4.0
4.5
5.0
5.5
−40 −20
0
20
40
60
80
100 120
V
CC
, OUTPUT SUPPLY VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Typical Logic Output Supply Current vs.
Output Supply Voltage
Figure 8. Typical Propagation Delay vs.
Ambient Temperature
10
40
30
20
10
0
Frequency = 5 MHz
Duty Cycle = 50%
Frequency = 5 MHz
Duty Cycle = 50%
V
= 3.3 V
I
F
= 7.5 mA
I = 7.5 mA
8
6
4
2
0
CC
F
R = 350 W
L
R = 350 W
L
t
@V = 5.0 V
CC
R
t
R
@V = 3.3 V
CC
t @V = 3.3 V
F
CC
t @V = 5.0 V
V
= 5.0 V
60
F
CC
CC
−40 −20
0
20
40
80
100 120
−40 −20
0
20
40
60
80
100 120
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 9. Typical Pulse Width Distortion vs.
Ambient Temperature
Figure 10. Typical Rise and Fall Time vs.
Ambient Temperature
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6
FODM8061
SCHEMATICS
I
F
Pulse Gen.
5 MHz
1
3
6
t = tr = 5 ns
DC = 50%
f
0.1 mF
350 W
Bypass
5
V
Monitoring
O
Node
C
Input
Monitoring
Mode
L
4
R
M
(I = 7.5 mA)
F
Input
50%
t
t
r
f
90%
1.5 V
10%
Output
V
OL
t
t
PLH
PHL
Figure 11. Test Circuit for Propagation Delay Time,
Rise Time and Fall Time
I
F
V
1
3
6
5
4
CC
0.1 mF
Bypass
350 W
V
Node
Monitoring
O
SW
R
C
L
M
V
CM
Pulse Gen.
1 kV
V
CM
90%
10%
0 V
t
t
f
r
V
OH
V
(I = 0 mA)
F
O
O
0.8 V
CC
0.8 V
V
(I = 7.5 mA)
F
V
OL
Figure 12. Test Circuit for Instantaneous Common
Mode Rejection Voltage
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7
FODM8061
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
T
P
260
240
t
P
T
L
220
200
180
160
140
120
T
smax
t
L
Preheat Area
T
smin
t
s
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Figure 13. Reflow Profile
Table 1. REFLOW PROFILE
Profile Feature
Temperature Minimum (T
Pb−Free Assembly Profile
150°C
)
smin
Temperature Maximum (T
)
200°C
smax
Time (t ) from (T
to T )
smax
60 – 120 seconds
3°C/second max.
217°C
S
smin
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
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8
FODM8061
ORDERING INFORMATION
Part Number
†
Package
Shipping
FODM8061
MFP5 4.1X4.4, 2.54P
100 Units / Tube
2500 / Tape & Reel
100 Units / Tube
(Pb−Free)
FODM8061R2
FODM8061V
MFP5 4.1X4.4, 2.54P
(Pb−Free)
MFP5 4.1X4.4, 2.54P
IEC60747−5−5
(Pb−Free)
FODM8061R2V
MFP5 4.1X4.4, 2.54P
IEC60747−5−5
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP5 4.1X4.4, 2.54P
CASE 100AM
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13486G
MFP5 4.1X4.4, 2.54P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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TECHNICAL PUBLICATIONS:
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