FPAM30LH60 [ONSEMI]
PFC 智能功率模块,600V,30A;型号: | FPAM30LH60 |
厂家: | ONSEMI |
描述: | PFC 智能功率模块,600V,30A 功率因数校正 |
文件: | 总13页 (文件大小:854K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2014 年 7 月
FPAM30LH60
®
用于两相交错式功率因数校正的 PFC SPM 2 系列
特性
概述
FPAM30LH60 是 PFC SPM® 2 模块,为消费、医药和工
业应用提供非常全面的高性能交错式功率因数校正输入功
率平台。这些模块综合优化了内置 IGBT 的栅极驱动以最
小化电磁干扰和能量损耗。同时也提供多重模组保护特
性,集成欠压闭锁,过流保护,热量监测和故障报告。这
些模块内的全波整流器和高性能输出二极管,为额外节省
空间和方便安装起到了重要作用。
• 通过 UL 第 E209204 号认证 (UL1557)
• 600 V - 30 A 两相交错式功率因数校正,包含栅极驱动
和保护的控制 IC
• 采用 DBC (Al2O3) 基板实现非常低的热阻
• 全波桥式整流器和高性能输出二极管
• 针对 20 kHz 开关频率进行优化
• 内置负温度系数热敏电阻可实现温度监测
• 绝缘等级:2500 Vrms/ 分钟
应用
•
两相交错式功率因数校正转换器
相关资料
• 即将发布
图 1. 封装概览
封装标识与定购信息
器件
器件标识
封装
包装类型
数量
FPAM30LH60
FPAM30LH60
S32EA-032
Rail
8
©2012 飞兆半导体公司
1
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FPAM30LH60 Rev. C3
集成的驱动、保护和系统控制功能
•
•
•
•
对于 IGBT:栅极驱动电路、过流保护 (OCP)、控制电源欠压锁定 (UVLO)保护
故障信号:对应 OC 和 UV 故障
内置热敏电阻:温度监控
输入接口:高电平有效接口,可用于 3.3 / 5 V 逻辑电平,施密特触发脉冲输入
引脚布局
(1)CSC
(2)COM
(3)VFO
(24)P
(25)P
(26)PY
(27)n.c.
(28)PX
(4)INX
(5)INY
(6)COM
(7)n.c.
(8)VCC
(9)VCC
Case temperature(T
detecting point
C
)
(10)COM
(11)RTH
(12)VTH
(29)X
(30)Y
(31)NP
(13)NR
(14)NR
(15)n.c.
(16)n.c.
(17)n.c.
(18)R
(19)R
(20)n.c.
(21)n.c.
(32)PR
(22)S
(23)S
Dimension unit: millimeter
图 2. 俯视图
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
引脚描述
引脚号
1
引脚名
CSC
COM
VFO
INX
INY
N.C
VCC
RTH
VTH
NR
引脚描述
过流检测的信号输入
公共电源接地
2,6,10
3
故障输出
4
X IGBT 驱动的 PWM 输入
Y IGBT 驱动的 PWM 输入
5
7
无连接
8,9
适用于 IGBT 驱动的 IC 的公共电源电压
11
供热敏电阻使用的串联电阻器
热敏电阻偏压
12
13,14
15,16,17
18,19
20,21
22,23
24,25
26
整流二极管的直流负端
无连接
N.C
R
R 相的交流输入
N.C
S
无连接
S 相的交流输入
P
二极管的输出
二极管的输入
无连接
PY
27
N.C
PX
28
二极管的输入
X 相 IGBT 的输出
Y 相 IGBT 的输出
IGBT 的直流负端
29
X
30
Y
31
NP
32
PR
整流二极管的直流正端
内部等效电路
(11)RTH
(24)(25)P
THERMISTOR
(12)VTH
(26)PY
(28)PX
(1)CSC
(3)VFO
CSC
VFO
(29)X
(30)Y
(4)INX
(5)INY
INX
OUT X
INY
(32)PR
(8)(9)VCC
VCC
(18)(19)R
(22)(23)S
(2)(6)(10)
COM
OUT Y
COM
(31)NP
(13)(14)NR
图 3. 内部框图
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
绝对最大额定值 (TJ = 25°C,除非另有说明。 )
转换器部分
符号
Vi
参数
工作条件
额定值
264
单位
Vrms
V
施加在 R - S 之间
输入电源电压
输出电压
VPN
施加在 X - NP, Y - NP, P - PX, P - PY
施加在 X - NP, Y - NP, P - PX, P - PY
X - NP, Y - NP 之间的击穿电压
P - PX, P - PY 之间的击穿电压
450
VPN (浪涌)
VCES
500
V
输出电源电压 (浪涌)
600
V
集电极 - 发射极之间电压
VRRM
600
V
快速恢复二极管的重复峰值反向电压
整流器的重复峰值反向电压
VRRMR
PR - R, PR - S,
900
V
R - NR, S - NR 之间的击穿电压
*IF
TC = 25°C, TJ < 125°C
30
300
30
A
A
A
A
A
A
快速恢复二极管的正向电流
快速恢复二极管的峰值浪涌电流
正向整流电流
*IFSM
*IFR
非重复性,60 Hz 单一正弦半波
TC = 25°C, TJ < 125°C
*IFSMR
± *IC
非重复性,60 Hz 单一正弦半波
TC = 25°C, TJ < 125°C
300
30
整流器的峰值浪涌电流
单个 IGBT 的集电极电流
单个 IGBT 的集电极电流 (峰值)
± *ICP
TC = 25°C, TJ < 125°C,
60
脉冲宽度小于 1 ms
*PC
TJ
TC = 25°C 单个 IGBT
(注 1)
107
W
集电极功耗
工作结温
-40 ~ 125
°C
注:
®
1. PFC SPM 产品集成的功率芯片的最大额定结温是 125°C。
2. 标记为 “ * “ 的为计算值或设计因素。
控制部分
符号
VCC
VIN
参数
工作条件
额定值
20
单位
V
施加在 VCC - COM 之间
控制电源电压
施加在 INX, INY - COM 之间
施加在 VFO - COM 之间
-0.3 ~ VCC + 0.3
-0.3 ~ VCC + 0.3
1
V
输入信号电压
VFO
IFO
V
故障输出电源电压
故障输出电流
V
FO 引脚处的灌电流
mA
V
VSC
施加在 CSC - COM 之间
-0.3 ~ VCC + 0.3
电流感测输入电压
整个系统
符号
TSTG
VISO
参数
工作条件
额定值
-40 ~ 125
2500
单位
°C
存储温度
绝缘电压
60 Hz,正弦波形,交流 1 分钟,连接陶瓷基
板到引脚
Vrms
热阻
符号
参数
条件
工作条件下的单个 IGBT
工作条件下的单个二极管
工作条件下的单个整流器
最小值 典型值 最大值 单位
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)R
-
-
-
-
-
-
0.93
1.42
0.74
°C/W
°C/W
°C/W
结点 - 壳体的热阻
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
电气特性 (TJ = 25°C,除非另有说明。)
转换器部分
符号
VCE(SAT)
VFF
参数
工作条件
VCC = 15 V, VIN = 5 V, IC =30 A
IF = 30 A
最小值 典型值 最大值 单位
IGBT 饱和电压
-
-
-
-
-
-
-
-
-
-
1.7
1.9
1.10
11
2.2
V
V
2.4
快速恢复二极管正向电压
整流器正向电压
开关特性
VFR
IFR = 30 A
1.25
V
IRR
VPN = 400 V, VCC = 15 V, IC = 15 A,
-
A
V
IN = 0 V 5 V,感性负载 (注 3), 单 个
tRR
41
-
ns
ns
ns
ns
ns
A
IGBT
tON
700
852
104
102
-
-
tOFF
-
tC(ON)
tC(OFF)
ICES
-
-
VCES = 600 V
250
集电极 - 发射极间漏电流
注:
3. t 和 t
包括模块内部驱动 IC 的传输延迟时间。t
和 t
指在内部给定的栅极驱动条件下, IGBT 本身的开关时间。详细信息,请参见图 4。
C(OFF)
ON
OFF
C(ON)
100% IC
100% IC
tRR
IRR
VCE
IC
90% IC
10% IC
10% VCE
10% VCE
10% IC
VIN
tON
tOFF
tC(OFF)
tC(ON)
(a) turn-on
(b) turn-off
图 4. 开关时间的定义
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
控制部分
符号
参数
工作条件
最小值 典型值 最大值 单位
IQCC
V
CC 静态电源电流
VCC = 15 V, INX, INY - COM = 0 V, VCC
和
-
-
2.65
mA
COM 间的电源电流
IPCC
VCC = 15 V, fPWM = 20 kHz, Duty = 50% 应用
-
-
6.0
mA
工作 VCC 电源电流
于单个 IGBT 的 一个 PWM 信号输入 VCC
COM 间的电源电流
和
VFOH
VFOL
VSC = 0 V, VFO 电路:10 k 至 5 V 上拉
VSC = 1 V, VFO 电路:10 k 至 5 V 上拉
4.5
-
-
-
-
V
V
V
故障输出电压
0.5
0.55
VSC(Ref) CSC 引脚的过流保护触发电 VCC = 15 V
平电压
0.45
0.50
UVCCD
UVCCR
tFOD
10.5
11.0
30
2.6
-
-
-
13.0
V
V
电源电路欠压保护
检测电平
复位电平
13.5
-
-
-
s
V
故障输出脉宽
导通阈值电压
关断阈值电压
热敏电阻的阻值
VIN(ON)
VIN(OFF)
RTH
施加在 INX, INY - COM 之间
施加在 INX, INY - COM 之间
-
-
0.8
-
V
-
47
k
当 TTH = 25°C (注 4,图 5)
当 TTH = 100°C (注 4,图 5)
-
2.9
-
k
注:
4. T 为热敏电阻自身的温度。若需得到壳体温度 ( T ),请根据具体应用进行实验。
TH
C
R-T Curve
200
150
100
50
4
3
2
1
95
100
105
110
115
120
125
Temperature TTH[oC]
0
0
25
50
75
100
125
Temperature TTH[oC]
图 5. 内置热敏电阻的 R-T 曲线
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
推荐工作条件 (TJ = 25°C,除非另有说明。)
符号
参数
工作条件
最小值 典型值 最大值 单位
Vi
Ii
施加在 R - S 之间
TC < 100°C, Vi = 220 V, VO = 360 V,
PWM = 20 kHz 单个 IGBT
187
-
-
-
253
21
Vrms
Arms
输入电源电压
输入电流
f
VPN
VCC
施加在 X - NP, Y - NP, P - PX, P - PY
施加在 VCC - COM 之间
-
13.5
-1
-
-
15.0
-
400
V
V
电源电压
16.5
控制电源电压
电源波动
dVCC/dt
IFO
1
1
-
V / s
mA
kHz
V
FO 引脚处的灌电流
-
故障输出电流
PWM 输入频率
fPWM
-40°C < TJ < 125°C 单个 IGBT
-
20
机械特性和额定值
参数
工作条件
最小值 典型值 最大值 单位
安装螺钉:M4
建议 0.98 N•m
建议 10 kg•cm
0.78
0.98
10
-
1.17
12
N•m
kg•cm
m
安装扭矩
8
0
-
见图 6
+150
-
器件平面度
重量
32
g
图 6. 平面度测量位置
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
保护功能时序图
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVCCR
a1
a6
UVCCD
a2
Control
Supply Voltage
a3
a4
a7
Output Current
a5
Fault Output Signal
a1 : 控制电源电压上升:当电压上升到 UVCCR 后,等到下一个开通信号时,对应的电路才开始动作。
a2 : 正常工作:IGBT 导通并加载负载电流。
a3 : 欠压检测 (UVCCD)。
a4 : 不论控制输入的条件, IGBT 都关断。
a5 : 故障输出工作启动。
a6 : 欠压复位 (UVCCR)。
a7 : 正常工作:IGBT 导通并加载负载电流。
图 7. 欠压保护
(与外部的过流检测电路)
c1 : 正常工作:IGBT 导通并加载负载电流。
Input Voltage (VIN)
c6
c7
c2 : 过流检测 (OC 触发)
c3 : IGBT 栅极硬中断。
c4 : IGBT 关断。
Internal IGBT
Gate-Emitter Voltage
c4
c3
c2
c5 : 故障输出计时器启动。
c6 : 输入 “LOW”:IGBT 关断状态。
OC
c7 : 输入 “HIGH”:IGBT 导通状态,但是在故障输出有效的时间
内, IGBT 不导通。
c1
c8 : IGBT 关断状态。
c8
Output Current
Input signal to CSC
pin for Protection
SET
RESET
c5
Fault Output Signal
图 8. 过流保护
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
+5 V
Input signal for over
current protection
Current sensing
RT
RTH
VTH
P
THERMISTOR
PX
PY
+5 V
RSCF
CSCF
CSC
RFO
X
Y
VFO
INX
L
V
DC
CF
L
OUT X
OUT Y
PR
RF
CF
V
AC
INY
R
S
RF
+15 V
VCC
COM
DX
DY
NR
NP
图 9. 典型应用电路
注:
1. 为了避免故障,每个输入端的连线必须尽可能的短 (小于 2 ~ 3 cm)。
2. V 输出是漏极开路型。该信号线应当采用一个能把 I 上升到 1 mA 的电阻上拉至 MCU 或控制电源的正极。
FO
FO
3. 输入信号为高电平有效。在 IC 中,有一个 5 kΩ 的电阻将每一个输入信号线下拉接地。应采用 RC 耦合电路,以避免输入信号波动。 R C 常数应当在 50~150ns 范围内选择
F
F
(推荐 R = 100 Ω , C = 1 nF)。
F
F
4. 为避免保护功能出错,应尽可能缩短 R
和 C
周围的连线。
SCF
SCF
5. 在短路保护电路中,R
, C
时间常数应在 1.5 ~ 2 μs 范围内进行选择。
SCF
SCF
®
6. 每个电容都应尽可能地靠近 PFC SPM 产品的引脚安装。
7. 在各种家用电器设备中,几乎都用到了继电器。在这些情况下, MCU / 控制器和继电器之间应留有足够的距离。
8. 内部负温度系数热敏电阻能用来监控壳体温度,以及保护器件免于过热工作。根据应用选择一个适当的电阻 R
9. 建议将反向并联二极管 D D ) 与每个 IGBT 相连接。
。
T
X
Y
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
封装轮廓详图
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和
/ 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/dwg/MO/MOD32BA.pdf
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
©2012 飞兆半导体公司
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FPAM30LH60 Rev. C3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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