FPF1039UCX [ONSEMI]
低导通电阻，摆率控制负载开关;
| 型号： | FPF1039UCX |
| 厂家： | 
ONSEMI |
| 描述： | 低导通电阻，摆率控制负载开关 开关 |
| 文件： | 总16页 (文件大小：1606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
FPF1039
Low On-Resistance, Slew-Rate-Controlled Load Switch
Features
Description
.
.
1.2 V to 5.5 V Input Voltage Operating Range
Typical RON
The FPF1039 advanced load-management switch target
applications requiring a highly integrated solution for
disconnecting loads powered from DC power rail (<6 V)
with stringent shutdown current targets and high load
capacitances (up to 200 µF). The FPF1039 consists of
slew-rate controlled low-impedance MOSFET switch
(21 mΩ typical) and other integrated analog features.
The slew-rate controlled turn-on characteristic prevents
inrush current and the resulting excessive voltage droop
on power rails.
:
20 mΩ at VIN=5.5 V
21 mΩ at VIN=4.5 V
37 mΩ at VIN=1.8 V
75 mΩ at VIN=1.2 V
.
.
.
.
.
.
Slew Rate / Inrush Control with tR: 2.7 ms (Typical)
3.5 A Maximum Continuous Current Capability
Output Capacitor Discharge Function
This device has exceptionally low shutdown current
drain (<1 µA maximum) that facilitates compliance in
low standby power applications. The input voltage range
operates from 1.2 V to 5.5 V DC to support a wide range
of applications in consumer, optical, medical, storage,
portable, and industrial device power management.
Low <1 µA Shutdown Current
ESD Protected: Above 8 kV HBM, 1.5 kV CDM
GPIO / CMOS-Compatible Enable Circuitry
Switch control is managed by a logic input (active HIGH)
capable of interfacing directly with low-voltage control
signal / GPIO with no external pull-up required. The
device is packaged in advanced fully “green” 1mm
x1.5 mm Wafer-Level Chip-Scale Packaging (WLCSP);
providing excellent thermal conductivity, small footprint,
and low electrical resistance for wider application usage.
Applications
.
.
.
.
.
.
.
HDD, Storage, and Solid-State Memory Devices
Portable Media Devices, UMPC, Tablets, MIDs
Wireless LAN Cards and Modules
SLR Digital Cameras
Portable Medical Devices
GPS and Navigation Equipment
Industrial Handheld and Enterprise Equipment
Ordering Information
Switch
RON
Top
Input
Output
ON Pin
Activity
Part Number
tR
Package
Mark (Typical) Buffer Discharge
at 4.5 VIN
6-Bump, WLCSP, 1.0 mm
x 1.5 mm, 0.5 mm Pitch
FPF1039UCX
QF
21 mΩ
CMOS
65Ω
Active HIGH 2.7 ms
Active HIGH 2.7 ms
6-Bump, WLCSP with
Backside Laminate,
1.0 mm x 1.5 mm,
0.5 mm Pitch
FPF1039BUCX
QF
21 mΩ
CMOS
65Ω
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
Application Diagram
VIN
VIN
VOUT
VOUT
FPF1039
OFF
CIN
ON
ON
GND
VIN:1.2V – 5.5V
COUT: 0 – 200µF
Figure 1. Typical Application
Functional Block Diagram
VIN
VOUT
FPF1039
CONTROL
LOGIC
ON
Turn-On Slew Rate
Controlled Driver
R
ESD Protection
Output Discharge
Figure 2. Functional Block Diagram
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
2
Pin Configuration
VOUT
VIN
VIN
VIN
VIN
VOUT
A1
A2
B2
C2
A2
B2
C2
A1
B1
C1
VOUT
GND
VOUT
B1
C1
ON
ON
GND
Figure 3. Top View
Figure 4. Bottom View
Pin Definitions
Pin #
Name
Description
A1, B1
A2, B2
C1
VOUT
VIN
Switch Output
Supply Input: Input to the Power Switch
Ground
GND
ON
C2
ON/OFF Control, Active High - GPIO Compatible
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Min.
Max. Unit
VIN
ISW
PD
VIN, VOUT, VON to GND
-0.3
6.0
3.5
V
A
Maximum Continuous Switch Current
Power Dissipation at TA=25°C
Storage Junction Temperature
Operating Temperature Range
1.2
W
°C
°C
TSTG
TA
-65
-40
+150
+85
85(1)
110(2)
Thermal Resistance, Junction-to-Ambient
°C/W
kV
JA
Human Body Model, JESD22-A114
Charged Device Model, JESD22-C101
8.0
1.5
ESD
Electrostatic Discharge Capability
Notes:
1. Measured using 2S2P JEDEC std. PCB.
2. Measured using 2S2P JEDEC PCB COLD PLATE method.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VIN
Parameters
Min.
1.2
Max.
5.5
Unit
V
Input Voltage
Ambient Operating Temperature
TA
-40
+85
°C
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
4
Electrical Characteristics
Unless otherwise noted, VIN=1.2 to 5.5V and TA=-40 to +85°C; typical values are at VIN=4.5V and TA=25°C.
Symbol
Parameters
Conditions
Min.
Typ. Max. Units
Basic Operation
VIN
IQ(OFF)
ISD
Input Voltage
1.2
5.5
1.0
1.0
8.0
24
V
Off Supply Current
Shutdown Current
Quiescent Current
VON=GND, VOUT=Open
VON=GND, VOUT=GND
IOUT=0 mA
μA
μA
μA
0.2
5.5
20
21
24
28
37
75
IQ
VIN=5.5 V, IOUT=1 A(3)
VIN=4.5 V, IOUT=1 A, TA=25°C
VIN=3.3 V, IOUT=500 mA(3)
VIN=2.5 V, IOUT=500 mA(3)
VIN=1.8 V, IOUT=250 mA(3)
VIN=1.2 V, IOUT=250 mA, TA=25°C
25
29
RON
On Resistance
mΩ
Ω
35
45
100
VIN=4.5 V, VON=0 V, IFORCE=20 mA,
TA=25°C
RPD
Output Discharge RPULL DOWN
65
85
VIH
VIL
ION
On Input Logic HIGH Voltage
On Input Logic LOW Voltage
On Input Leakage
1.0
V
V
0.4
1.5
μA
Dynamic Characteristics
tDON
tR
Turn-On Delay(4)
VOUT Rise Time(4)
Turn-On Time(6)
Turn-Off Delay(4,5)
VOUT Fall Time(4,5)
Turn-Off (5,7)
1.7
2.7
ms
ms
ms
ms
ms
ms
VIN=4.5 V, RL=5 Ω, CL=100 µF,
TA=25°C
tON
4.4
tDOFF
tF
0.5
VIN=4.5 V, RL=150 Ω, CL=100 µF,
10.0
10.5
TA=25°C (5)
tOFF
Notes:
3. This parameter is guaranteed by design and characterization; not production tested.
4. tDON/tDOFF/tR/tF are defined in Figure 32.
5. Output discharge enabled during off-state.
6. tON=tR + tDON
7. tOFF=tF + tDOFF
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
5
Typical Characteristics
Figure 5. Shutdown Current vs. Temperature
Figure 6. Shutdown Current vs. Supply Voltage
Figure 7. Off Supply Current vs. Temperature
(VOUT = 0 V)
Figure 8. Off Supply Current vs. Supply Voltage
(VOUT = 0 V)
Figure 9. Quiescent Current vs. Temperature
Figure 10.Quiescent Current vs. Supply Voltage
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
6
Typical Characteristics (Continued)
Figure 11. Quiescent Current vs. On Voltage
(VIN = 4.5 V)
Figure 12. Quiescent Current vs. On Voltage
(VIN = 5.5 V)
Figure 13. Output Discharge Resistor RPD
vs. Temperature
Figure 14. Output Discharge Resistor RPD
vs. Supply Voltage
90
VIN = 1.2V
80
70
60
50
40
30
20
10
0
VIN = 4.5V
VIN = 5.5V
ON = VIN
IOUT=0.25A@1.2V
IOUT=1A@4.5V&5.5V
-40
-15
10
35
60
85
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. RON vs. Temperature
Figure 16. RON vs. Supply Voltage
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
7
Typical Characteristics (Continued)
Figure 17. On Pin Threshold Low vs. Temperature
Figure 18. On Pin Threshold Low vs. VIN
Figure 19. On Pin Threshold High vs. Temperature
Figure 20. On Pin Threshold High vs. VIN
Figure 21. On Pin Threshold vs. Supply Voltage
Figure 22. ISW vs. (VIN-VOUT) — SOA
Figure 23. tR/tF vs. Temperature
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
8
Typical Characteristics (Continued)
3.5
Tr
3.0
2.5
2.0
Tdon
1.5
1.0
0.5
0.0
VIN = 4.5V
CL = 100uF
RL = 5 Ohm
-40
-15
10
35
60
85
TJ, JUNCTION TEMPERATURE (°C)
Figure 24. tR/tDON vs. Temperature
Figure 25. tR vs. Supply Voltage
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
+85C
+25C
-40C
VON
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Time (ms)
Figure 27. Turn-On Response
(VIN=4.5 V, CIN=10 µF, CL=1 µF, RL=50 )
Figure 26. tR vs. Supply Voltage
4.5
4
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
+85C
3.5
3
+25C
-40C
2.5
2
+25C
1.5
1
VON
VON
0.5
0
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
0
5
10
15
20
25
30
35
Time (ms)
Time (ms)
Figure 28. Turn-On Response
(VIN=4.5 V, CIN=10 µF, CL=100 µF, RL=5 )
Figure 29. Turn-Off Response
(VIN=4.5 V, CIN=10 µF, CL=100 µF, without External RL)
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
9
Typical Characteristics (Continued)
100
10.000
10
100mF
1.000
500
50
1
10mF
0.100
5
0.1
1mF
0.010
0.01
0.001
0.001
1
10
100
1000
10000
0.1
1
10
CLOAD (mF)
100
1000
RLOAD ()
Figure 31. Fall Time as a Function of External
Capacitive Load (RL=5 , 50 , and 500 )
Figure 30. Fall Time as a Function of External
Resistive Load (CL=1 µF, 10 µF, and 100 µF)
90%
10%
90%
10%
V
OUT
tR
t
F
4.5V
50%
50%
V
ON
90%
10%
V
OUT
t
DON
tDOFF
Figure 32. Timing Diagram
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
10
Application Information
Input Capacitor
This IntelliMAX™ switch doesn’t require an input
capacitor. To reduce device inrush current, a 0.1 µF
ceramic capacitor, CIN, is recommended close to the
VIN pin. A higher value of CIN can be used to reduce the
voltage drop experienced as the switch is turned on into
a large capacitive load.
At maximum operational voltage (VIN=5.5 V), device
inrush current might be higher than expected. Spike
current should be taken into account if VIN>5 V and the
output capacitor is much larger than the input capacitor.
Input current can be calculated as:
V
(t)
dV
OUT
dt
(t)
OUT
I
(t)
(C
C )
(3)
IN
LOAD IN
R
LOAD
where switch and wire resistances are neglected and
capacitors are assumed ideal.
Output Capacitor
While this switch works without an output capacitor: if
parasitic board inductance forces VOUT below GND
when switching off; a 0.1 µF capacitor, COUT, should be
placed between VOUT and GND.
Estimating VOUT(t)=VIN/10 and using experimental
formula for slew rate (dVOUT(t)/dt), spike current can be
written as:
V
Fall Time
IN
0.05V 0.255
IN
IN
max
I
C
C
(4)
IN
LOAD
10R
LOAD
Device output fall time can be calculated based on RC
constant of the external components as follows:
where supply voltage VIN is in volts, capacitances are
in micro farads, and resistance is in ohms.
tF RL CL 2.2
(1)
Example: If VIN=5.5V, CLOAD=100 µF, CIN=10 µF, and
RLOAD=50 ; calculate the spike current by:
where tF is 90% to 10% fall time, RL is output load,
and CL is output capacitor.
5.5
max( I )
(100 10)(0.05 5.5 0.255 )A 1.8A
(5)
IN
The same equation works for a device with a pull-down
output resistor. RL is replaced by a parallel connected
pull-down and an external output resistor combination as:
10 50
Maximum spike current is 1.8 A, while average ramp-
up current is:
RL RPD
RL RPD
V
(t)
dV (t)
IN
dt
OUT
tF
CL 2.2
I
(t)
(C
C )
IN
LOAD IN
(2)
R
LOAD
(6)
2.75 /50 100 0.0022 0.275 A
where tF is 90% to 10% fall time, RL is output load,
RPD=65 is output pull-down resistor, and CL is the
output capacitor.
Output Discharge
FPF1039 contains a 65 Ω on-chip pull-down resistor for
quick output discharge. The resistor is activated when
the switch is turned off.
Resistive Output Load
If resistive output load is missing, the IntelliMAX switch
without a pull-down output resistor does not discharge
the output voltage. Output voltage drop depends, in that
case, mainly on external device leaks.
Recommended Layout
For best thermal performance and minimal inductance
and parasitic effects, it is recommended to keep input
and output traces short and capacitors as close to the
device as possible. Figure 34 is a recommended layout
for this device to achieve optimum performance.
Application Specifics
Vout
Vin
ON
+
CLOAD
FPF1039
RLOAD
VIN
CIN
OFF ON
GND
Figure 33. Device Setup
Figure 34. Recommended Land Pattern, Layout
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
11
Physical Dimensions
0.03 C
F
(Ø0.250)
Cu Pad
E
A
2X
(Ø0.350)
SOLDER MASK
OPENING
B
D
A1
(1.00)
(0.50)
BALL A1
INDEX AREA
0.03 C
2X
TOP VIEW
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
0.06
C
E
0.332±0.018
0.250±0.025
0.625
0.539
0.05
C
C
D
SEATING PLANE
SIDE VIEWS
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
0.005
C A B
Ø0.315 +/- .025
6X
C. DIMENSIONS AND TOLERANCE
PER ASMEY14.5M, 1994.
0.50
0.50
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
C
1.00
B
A
(Y) ±0.018
F
E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS
±43 MICRONS (539-625 MICRONS).
1
2
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
(X) ±0.018
BOTTOM VIEW
G. DRAWING FILNAME: MKT-UC006AFrev2.
Figure 35. 6 Ball, 1.0 x 1.5 mm Wafer-Level Chip-Scale Packaging (WLCSP)
© 2010 Fairchild Semiconductor Corporation
FPF1039 • Rev. 1.5
www.fairchildsemi.com
12
Nominal Values
Bump
Pitch
Overall Package
Silicon
Thickness
Solder Bump
Height
Solder Bump
Diameter
Height
0.5 mm
0.582 mm
0.332 mm
0.250 mm
0.315 mm
Product-Specific Dimensions
Product
D
E
X
Y
FPF1039UCX
1.46 mm ±0.03
1.46 mm ±0.03
0.96 mm ±0.03
0.96 mm ±0.03
0.230 mm
0.230 mm
0.230 mm
0.230 mm
FPF1039BUCX
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
13
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1039 • Rev. 1.5
14
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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