FPF1108 [ONSEMI]
高级负载管理开关;
| 型号： | FPF1108 |
| 厂家： | 
ONSEMI |
| 描述： | 高级负载管理开关 开关 PC 驱动 接口集成电路 驱动器 |
| 文件： | 总16页 (文件大小：1041K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2009
FPF1107 / FPF1108
Advance Load Management Switch
Features
Description
1.2V to 4V Input Voltage Operating Range
Typical RDS(ON)
The FPF1107/08 are low RDS P-channel MOSFET load
switches of the IntelliMAX™ family. Integrated slew-rate
control prevents inrush current from glitch supply rails
with capacitive loads common in power applications.
:
-
-
-
35mΩ at VIN=3.3V
55mΩ at VIN=1.8V
85mΩ at VIN=1.2V
The input voltage range operates from 1.2V to 4V to
fulfill today's lowest ultra-portable device supply
requirements. Switch control is by a logic input (ON-pin)
capable of interfacing directly with low-voltage CMOS
control signals and GPIOs in embedded processors.
Slew Rate Control with tR: 130µs
Output Discharge Function on FPF1108
Low <1µA Quiescent Current at VON=VIN
ESD Protected: Above 4000V HBM, 2000V CDM
GPIO/CMOS-Compatible Enable Circuitry
Applications
Mobile Devices and Smart Phones
Portable Media Devices
Digital Cameras
Advanced Notebook, UMPC, MID
Portable Medical Devices
GPS and Navigation Equipment
Ordering Information
Switch
(Typical)
At 1.8VIN
Part
Marking
Input
Output
ON Pin
Part
Number
Eco
Status
tR
Package
Buffer Discharge Activity
Active
HIGH
4-Ball, Wafer-Level
Chip-Scale Package
(WLCSP), 1.0 x 1.0mm,
0.5mm Pitch
FPF1107
FPF1108
QC
QD
55mΩ
55mΩ
CMOS
CMOS
NA
130µs Green
130µs Green
Active
HIGH
65Ω
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
Application Diagram
VIN
VOUT
To Load
CIN
COUT
FPF1107/FPF1108
OFF ON
ON
GND
Figure 1. Typical Application
Notes:
1. CIN=1μF, X5R, 0603, for example Murata GRM185R60J105KE26
2. COUT=1μF, X5R, 0805, for example Murata GRM216R61A105KA01
Block Diagram
FPF1107/8
Figure 2. Block Diagram (Output Discharge for FPF1108 Only)
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
2
Pin Configurations
Figure 3. 1 x 1mm WLCSP Bumps Facing Down
Figure 4. 1 x 1mm WLCSP Bumps Facing Up
A2
B2
A1
B1
VOUT
VIN
A1
B1
A2
B2
VIN
VOUT
GND
ON
ON
GND
Figure 5. Pin Assignments (Top View)
Figure 6. Pin Assignments (Bottom View)
Pin Definitions
Pin #
Name
Description
A1
A2
B1
B2
VOUT
VIN
Switch Output
Supply Input: Input to the Power Switch.
Ground
GND
ON
ON/OFF Control, Active HIGH
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VIN
ISW
PD
VIN, VOUT, VON to GND
-0.3
4.2
1.2
V
A
Maximum Continuous Switch Current
Power Dissipation at TA=25°C
Storage Junction Temperature
Operating Temperature Range
1.0
W
°C
°C
TSTG
TA
-65
-40
+150
+85
95
1S2P with 1 Thermal Via
1S2P without Thermal Via
Thermal Resistance, Junction-to-Ambient
°C/W
ΘJA
187
Human Body Model,
JESD22-A114
4
2
ESD
Electrostatic Discharge Capability
kV
Charged Device Model,
JESD22-C101
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VIN
Parameter
Min.
1.2
Max.
4.0
Unit
V
Supply Voltage
TA
Ambient Operating Temperature
-40
+85
°C
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
4
Electrical Characteristics
Unless otherwise noted, VIN=1.2 to 4.0V, TA=-40 to +85°C, typical values are at VIN=3.3V and TA=25°C.
Symbol
Parameter
Conditions
Min.
Typ. Max. Units
Basic Operation
VIN
Supply Voltage
1.2
4.0
1
V
IQ(OFF)
ISD(OFF)
Off Supply Current
Off Switch Current
VON=GND VOUT=Open, VIN=4V
VON=GND VOUT=GND
μA
μA
1
I
OUT=0mA, VON=VIN
1
IQ
Quiescent Current
μA
IOUT=0mA, VON < VIN
3
VIN=3.3V, IOUT=200mA, TA=25°C
VIN=1.8V, IOUT=200mA, TA=25°C
VIN=1.5V, IOUT=200mA, TA=25°C
VIN=1.2V, IOUT=200mA, TA=25°C
VIN=1.8V, IOUT=200mA, TA=85°C(3)
35
55
70
85
65
50
70
RON
On Resistance
mΩ
150
100
VIN=3.3V, VON=0V, IFORCE=20mA,
TA=25°C, FPF1108
RPD
Output Discharge RPULL DOWN
65
110
Ω
VIH
VIL
ION
On Input Logic High Voltage
On Input Logic Low Voltage
On Input Leakage
VIN=1.2V to 4.0V
VIN=1.2V to 4.0V
VON=VIN or GND
1.1
-1
V
V
0.35
1
μA
Dynamic Characteristics
tDON
Turn-On Delay(4)
VOUT Rise Time(4)
Turn-On Time(4,6)
Turn-On Delay(4)
VOUT Rise Time(4)
Turn-On Time(4,6)
80
130
210
70
μs
μs
μs
μs
μs
μs
VIN=3.3V, RL=10Ω, CL=0.1µF,
TA=25°C, FPF1107/8
tR
tON
tDON
95
VIN=3.3V, RL=500Ω, CL=0.1µF,
TA=25°C, FPF1107/8
tR
95
120
215
tON
165
FPF1107
tDOFF
tF
Turn-Off Delay(4)
VOUT Fall Time(4)
Turn-Off(4,7)
Turn-Off Delay(4)
VOUT Fall Time(4)
Turn-Off(4,7)
2.0
2.2
4.2
7.0
110
117
2.5
μs
μs
μs
μs
μs
μs
VIN=3.3V, RL=10Ω, CL=0.1µF,
TA=25°C
tOFF
tDOFF
tF
VIN=3.3V, RL=500Ω, CL=0.1µF,
TA=25°C
tOFF
FPF1108(5)
tDOFF
tF
Turn-Off Delay(4)
VOUT Fall Time(4)
Turn-Off(4,7)
Turn-Off Delay(4)
VOUT Fall Time(4)
Turn-Off(4,7)
2.0
1.9
2.5
μs
μs
μs
μs
μs
μs
VIN=3.3V, RL=10Ω, CL=0.1µF,
RPD=65Ω, TA=25°C
tOFF
3.9
tDOFF
tF
2.5
VIN=3.3V, RL=500Ω, CL=0.1µF,
RPD=65Ω, TA=25°C
10.6
13.1
tOFF
Notes:
3. This parameter is guaranteed by design and characterization; not production tested.
4. tDON/tDOFF/tR/tF are defined in Figure 7.
5. Output discharge path is enabled during off.
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF1107 / FPF1108 • Rev. 1.0.1
5
Timing Diagram
90%
90%
10%
50%
10%
V
OUT
tR
tF
3.3V
50%
V
ON
90%
10%
V
OUT
tDOFF
tDON
Notes:
6. ON=tR + tDON
7. tOFF=tF + tDOFF
t
.
.
Figure 7. Timing Diagram
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
6
Typical Performance Characteristics
0.30
0 .2 5
0 .2 0
0 .1 5
0 .1 0
0 .0 5
0 .0 0
VON = VOUT = 0V
V O N = V O U T = 0 V
0.25
0.20
0.15
0.10
0.05
0.00
VIN = 4.0V
VIN = 3.3V
VIN = 1.2V
85 °C
25 °C
-4 0 °C
-40
-15
10
35
60
85
1.0
1 .5
2 .0
2 .5
3.0
3 .5
4 .0
TJ, JUNCTION TEMPERATURE (°C)
S U PP L Y V O LT A G E (V )
Figure 8. Shutdown Current vs. Temperature
Figure 9. Shutdown Current vs. Supply Voltage
0.10
0.07
VON = 0V
VON
= 0V
0.09
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.08
0.07
0.06
0.05
VIN = 4.0V
0.04
0.03
0.02
85°C
VIN = 3.3V
VIN = 1.2V
-40°C
25°C
0.01
0.00
-40
-15
10
35
60
85
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TJ, JUNCTION TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Figure 10. Off Supply Current vs. Temperature
(FPF1107, VOUT is Floating)
Figure 11. Off Supply Current vs. Supply Voltage
(FPF1107, VOUT is Floating)
0.050
0.40
VON = VIN
VON = VIN
0.35
0.045
0.040
0.035
0.030
0.025
0.30
0.25
-40°C
0.20
0.15
VIN = 4.0V
0.020
0.015
VIN = 3.3V
0.10
0.010
0.005
0.000
VIN = 1.2V
25°C
0.05
85°C
0.00
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-40
-15
10
35
60
85
SUPPLY VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Quiescent Current vs. Temperature
(VON=VIN)
Figure 13. Quiescent Current vs. Supply Voltage
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
7
Typical Performance Characteristics
3.00
2.50
2.00
1.50
1.00
0.50
0.00
VON = 0.75 x VIN
2.50
2.00
1.50
1.00
0.50
0.00
VIN = 4.0V
VIN = 3.3V
+25°C
+85°C
-40°C
VIN = 1.2V
-40
-15
10
35
60
85
1.0
1.5
2.0
2.5
3.0
3.5
4.0
S U P P LY V OLTA GE (V )
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Quiescent Current vs. Temperature
(VON=0.75 x VIN)
Figure 15. Quiescent Current vs. Supply Voltage
at VON=1.2V
300
120
VON=VIN
IOUT=200mA
VON = VIN
IOUT = 200mA
)
250
VIN = 1.2V
100
80
60
40
20
0
Ω
200
150
VIN = 3.3V
VIN = 4.0V
ON RESI STANCE (m
100
25°C
85°C
50
0
-40°C
-40
-15
10
35
60
85
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TJ, JUNCTION TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Figure 16. RON vs. Temperature
Figure 17. RON vs. Supply Voltage
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
25°C
V
IH
V
IL
1.0
1.5
2.0
2.5
3.0
3.5
4.0
SUPPLY VOLTAGE (V)
Figure 18. ON-Pin Threshold vs. VIN
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
8
Typical Performance Characteristics
1000
100
10
100 0
VIN = 3.3V
VIN = 3.3V
μ
F
μ
CL = 0.1
RL = 10
C L = 0.1
F
R L = 10
Ω
Ω
t
R
tDON
100
10
1
t
F
tDOFF
1
-40
-15
10
35
60
85
-40
-15
10
35
60
85
TJ, JUN C TIO N TEM PERA TUR E (°C )
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. VOUT Rise and Fall Time vs. Temperature
Figure 20. VOUT Turn-On and Turn-Off Delay vs.
at RL=10Ω
Temperature at RL=10Ω
100
120
VIN = 3.3V
VIN = 3.3V
90
80
70
60
50
40
30
20
10
0
μ
CL = 0.1
RL = 500
F
μ
F
CL = 0.1
110
100
90
Ω
Ω
RL = 500
t
F
tDON
t R
80
70
tDOFF
60
50
-40
-15
10
35
60
85
-40
-15
10
35
60
85
TJ , JUNCTION TEMPERATURE (°C)
TJ , JUN CTION TEMPER ATU RE (°C)
Figure 21. VOUT Rise and Fall Time vs. Temperature
Figure 22. VOUT Turn-On and Turn-Off Delay
at RL=500Ω
vs. Temperature at RL=500Ω
160
140
120
t
R
100
80
60
t
DON
40
20
10
100
O UTPU T LO AD
1000
[
]
Figure 23. VOUT Turn-On and Turn-Off Delay
vs. Output Load at VIN=3.3V
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
9
Typical Performance Characteristics
Figure 24. Turn-On Response
Figure 25. Turn-Off Response
(VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=10Ω)
(VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=10Ω)
Figure 27. Turn-Off Response
(FPF1107 – No Output Pull-Down Resistor)
(VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=500Ω)
Figure 26. Turn-On Response
(VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=500Ω)
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
10
Application Information
Input Capacitor
Fall Time
The IntelliMAXTM switch doesn’t require input capacitor.
To reduce device inrush current effect, a 0.1µF ceramic
capacitor, CIN, is recommended close to the VIN pin. A
higher value of CIN can be used to further reduce the
voltage drop experienced as the switch is turned on into
a large capacitive load.
Device output fall time can be calculated based on RC
constant of external components as follows:
tF = RL ×CL ×2.2
(1)
where tF is 90% to 10% fall time, RL is output load and
CL is output capacitor.
Output Capacitor
The same equation works for a device with a pull-down
output resistor, then RL is replaced by a parallel
connected pull-down and external output resistor
combination, as follows:
The IntelliMAXTM switch works without an output
capacitor. However, if parasitic board inductance forces
VOUT below GND when switching off, a 0.1µF capacitor,
COUT, should be placed between VOUT and GND.
RL × RPD
tF
=
× CL × 2.2
(2)
RL + RPD
where tF is 90% to 10% fall time, RL is output load,
R
PD=65Ω is output pull-down resistor, and CL is the
output capacitor.
Resistive Output Load
If resistive output load is missing, the IntelliMAXTM
switch without pull-down output resistor is not
discharging output voltage. Output voltage drop
depends, in that case, mainly on external device leaks.
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
11
Recommended Land Pattern and Layout
For best thermal performance and minimal inductance
and parasitic effects, it is recommended to keep input
and output traces short and capacitors as close to the
device as possible. Below is a recommended layout
for this device to achieve optimum performance.
Figure 28. Recommended Land Pattern and Layout
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
12
Physical Dimensions
0.03 C
F
E
A
2X
0.50
0.50
(Ø0.250)
Cu Pad
B
D
PIN A1 AREA
(Ø0.350)
Solder Mask
0.03 C
2X
TOP VIEW
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
0.06 C
0.332±0.018
0.250±0.025
0.625
0.539
0.05 C
C
SEATING PLANE
D
SIDE VIEWS
0.005
C A B
NOTES:
0.50
0.50
Ø0.315±0.025
4X
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
B
(Y)±0.018
A
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
F
1
2
(X)±0.018
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS
±43 MICRONS (539-625 MICRONS).
BOTTOM VIEW
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
G. DRAWING FILENAME: MKT-UC004ABrev2.
Figure 29. 4 Ball, 1.0 x 1.0mm Wafer Level Chip Scale WLCSP Packaging
Product-Specific Dimensions
Product
D
E
X
Y
FPF1107
FPF1108
960µm ± 30µm
960um ± 30µm
960µm ± 30µm
960um ± 30µm
0.230mm
0.230mm
0.230mm
0.230mm
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
13
© 2009 Fairchild Semiconductor Corporation
FPF1107 / FPF1108 • Rev. 1.0.1
www.fairchildsemi.com
14
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