FQA10N80C-F109 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，800 V，10 A，1.1 Ω，TO-3P;
| 型号： | FQA10N80C-F109 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，800 V，10 A，1.1 Ω，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：1561K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FQA10N80C-F109
®
N-Channel QFET MOSFET
800 V, 10 A, 1.1 Ω
Features
Description
•
•
•
•
•
10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
Low Gate Charge (Typ. 44 nC)
Low Crss (Typ. 15 pF)
This N-Channel enhancement mode power MOSFET is pro-
duced using ON Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
100% Avalanche Tested
RoHS compliant
D
G
G
D
TO-3PN
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FQA10N80C-F109
Unit
V
Drain to Source Voltage
Drain Current
800
10
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
A
ID
6.32
40
A
IDM
Drain Current
(Note 1)
A
VGSS
EAS
IAR
Gate to Source Voltage
30
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
920
mJ
A
10
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
24
mJ
V/ns
W
4.0
(TC = 25oC)
- Derate above 25oC
240
PD
Power Dissipation
1.92
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Unit
oC/W
oC/W
FQA10N80C-F109
RθJC
RθJA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
0.52
40
©2006 Semiconductor Components Industries, LLC.
September-2017,Rev.3
Publication Order Number:
FQA10N80C-F109/D
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA10N80C-F109
FQA10N80C
TO-3PN
Tube
N/A
N/A
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
800
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C
0.98
V/°C
/
ΔTJ Coefficient
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 5.0 A
VDS = 50 V, ID = 5.0 A
Gate Threshold Voltage
3.0
--
--
5.0
1.1
--
V
Ω
S
Static Drain-Source
On-Resistance
0.93
5.8
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
2150
180
15
2800
230
20
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
50
130
90
110
270
190
170
58
ns
ns
V
DD = 400 V, ID = 10.0 A,
G = 25 Ω
R
ns
(Note4)
(Note 4)
80
ns
Qg
45
nC
nC
nC
V
DS = 640 V, ID = 10.0 A,
Qgs
Qgd
VGS = 10 V
13.5
17
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
10.0
40.0
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 10.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 10.0 A,
730
10.9
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 17.3 mH, I = 10 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 8.4 A, di/dt ≤ 200 A/μs, V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
www.onsemi.com
2
Typical Characteristics
V
Top: 15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
101
101
o
Bottom: 5.5V
150 C
-55oC
25oC
100
100
※Notes :
1. 250μs Pulse Test
2. TC = 25℃
※Notes :
1. VDS = 50V
2. 250μs Pulse Test
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
101
2.0
1.5
1.0
0.5
VGS = 10V
VGS = 20V
100
150℃
25℃
※Notes :
1. VGS = 0V
2. 250μs Pulse Test
※Note: T = 25℃
J
-1
10
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
VDS = 160V
VDS = 400V
C
rss = Cds
gd
10
8
C
iss
VDS = 640V
6
C
oss
※Notes :
1. VGS = 0 V
2. f =1 MHz
4
C
2
rss
※Note: ID = 10A
0
0
10
-1
100
101
0
10
20
30
40
50
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID= 250 μA
0.9
0.8
※Notes :
1. V = 10 V
2. IDG=S 5.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
12
10
8
Operation in This Area
is Limited by R DS(on)
102
101
100
10 μs
100 μs
1 ms
10 ms
DC
6
4
-1
10
※Notes :
1. TC = 25 oC
2
2. T = 150 oC
J
3. Single Pulse
-2
0
25
10
100
101
103
2
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
100
D = 0.5
※
N otes :
1. Zθ JC(t) = 0.52 ℃ /W M ax.
2. D uty Factor, D =t1/t2
0 .2
10-1
3. TJM
- TC = P DM * Zθ JC(t)
0 .1
0 .0 5
PDM
t1
0 .0 2
t2
0 .0 1
sin gle pu lse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
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4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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