FQA28N50 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，500 V，28.4 A，160 mΩ，TO-3P;
| 型号： | FQA28N50 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，500 V，28.4 A，160 mΩ，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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August 2014
FQA28N50
N-Channel QFET MOSFET
®
500 V, 28.4 A, 160 mΩ
Features
Description
•
28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID
14.2 A
=
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.
•
•
•
•
Low Gate Charge (Typ. 110 nC)
Low Crss (Typ. 60 pF)
100% Avalanche Tested
RoHS compliant
D
G
G
D
TO-3PN
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQA28N50
500
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
28.4
A
18
A
IDM
(Note 1)
Drain Current
113.6
30
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
1300
28.4
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
31
mJ
V/ns
W
dv/dt
PD
4.5
310
- Derate above 25°C
2.5
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
-55 to +150
300
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
Max.
0.4
--
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
0.24
--
40
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA28N50
TO-3PN
Tube
N/A
N/A
30 units
FQA28N50
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
500
--
--
--
--
V
/
Breakdown Voltage Temperature Coeffi-
cient
I
D = 250 μA, Referenced to 25°C
0.5
V/°C
IDSS
VDS = 500 V, VGS = 0 V
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
3.0
--
--
0.126
28
5.0
0.16
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 14.2 A
gFS
VDS = 50 V, ID = 14.2 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
4300
640
60
5600
830
80
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
100
290
250
175
110
26
210
590
510
360
140
--
ns
ns
VDD = 250 V, ID = 28.4 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 400 V, ID = 28.4 A,
Qgs
Qgd
VGS = 10 V
52
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
28.4
113.6
1.4
--
A
A
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 28.4 A
GS = 0 V, IS = 28.4 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
440
5.7
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes :
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 2.9 mH, I = 28.4 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 28.4 A, di/dt ≤ 200 A/μs, V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
2
Typical Characteristics
102
101
100
102
V
Top: 15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
150℃
25℃
101
-55℃
※Notes :
1. 250μs Pulse Test
※Notes :
1. VDS = 50V
2. 250μs Pulse Test
100
2. T = 25℃
C
-1
10
-1
10
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
102
101
100
0.4
0.3
0.2
0.1
0.0
VGS = 10V
VGS = 20V
150℃
25℃
※Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0
20
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
9000
7500
6000
4500
3000
1500
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
VDS = 100V
VDS = 250V
gd
VDS = 400V
C
iss
C
oss
6
4
※Notes :
1. VGS = 0 V
2. f =1MHz
C
rss
2
※ Note : ID = 28.4 A
0
0
20
40
60
80
100
120
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes:
0.9
0.8
1. V = 0 V
2. IDG=S 250 μA
※Notes :
1. V = 10 V
2. IDG=S 14.2 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
10 μs
100 μs
1 ms
10 ms
101
DC
100
※ Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
-1
0
25
10
100
101
102
103
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
:
1 0 -1
0 .2
=
0 .4 ℃ /W M a x.
3 . T JM
-
T C
=
P D
* Z θ JC(t)
M
0 .1
0 .0 5
0 .0 2
PDM
1 0 -2
t1
0 .0 1
s in g le p u ls e
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
6
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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