FQA6N90C-F109 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，900 V，6 A，2.3 Ω，TO-3P;
| 型号： | FQA6N90C-F109 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，900 V，6 A，2.3 Ω，TO-3P |
| 文件： | 总9页 (文件大小：2076K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQA6N90C-F109
®
N-Channel QFET MOSFET
Description
900 V, 6 A, 2.3 Ω
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Features
•
•
•
•
•
6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A
Low Gate Charge (Typ. 30 nC)
Low Crss (Typ. 11 pF)
100% Avalanche Tested
RoHS Compliant
D
G
G
D
TO-3PN
S
S
T
C
= 25°C unless otherwise noted.
Absolute Maximum Ratings
Symbol
Parameter
FQA6N90C-F109
Unit
V
VDSS
ID
Drain-Source Voltage
900
6.0
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
A
3.87
24.0
± 30
A
(Note 1)
IDM
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
650
mJ
A
6.0
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
19.8
4.0
mJ
V/ns
W
198
- Derate above 25°C
1.59
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Unit
°C/W
°C/W
°C/W
FQA6N90C-F109
0.63
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max
0.24
40
©2007 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FQA6N90C-F109/D
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA6N90C-F109
TO-3PN
Tube
N/A
N/A
30 units
FQA6N90C
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900
--
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
1.07
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.0 A
VDS = 50 V, ID = 3.0 A
3.0
--
--
5.0
2.3
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
1.93
5.5
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
1360
110
11
1770
145
15
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 450 V, ID = 6.0A,
RG = 25 Ω
--
--
--
--
--
--
--
ns
ns
35
90
55
60
30
9.0
12
80
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
190
120
130
ns
(Note 4)
(Note 4)
ns
Qg
VDS = 720 V, ID = 6.0A,
VGS = 10 V
nC
nC
nC
40
--
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6.0
24
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 6.0 A
--
V
VGS = 0 V, IS = 6.0 A,
630
6.9
ns
dIF / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
µC
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 34 mH, I = 6 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3.I ≤ 6 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
Top :
15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
1
10
101
150oC
Bottom : 5.5 V
0
10
25oC
-55oC
100
-1
10
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※Notes :
1. VDS = 50V
2. 250µ s Pulse Test
-1
10
-2
10
-1
100
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4.5
4.0
101
VGS = 10V
3.5
VGS = 20V
3.0
100
2.5
2.0
150℃
25℃
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※Note : T = 25℃
J
-1
1.5
10
0
3
6
9
12
15
18
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
gd
rss = Cds
VDS = 180V
gd
C
10
iss
VDS = 450V
1500
1000
500
0
VDS = 720V
8
C
oss
6
4
2
※Notes :
1. VGS = 0 V
2. f =1MHz
C
rss
※Note: ID = 6A
0
10
100
-1
1
10
0
5
10
15
20
25
30
35
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes:
1. VGS = 0 V
2. ID= 250 µ A
0.9
※Notes :
1. V = 10 V
2. IDG=S 3.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
102
8
6
4
2
0
Operation in This Area
is Limited by R DS(on)
10 us
100 us
1 ms
101
100
10 ms
DC
-1
10
※Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
-2
10
25
50
75
100
125
150
100
101
102
103
TC, Case Temperature [? ]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
D = 0 .5
0 .2
※
N otes
1. Z (t) = 0.63 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
:
10-1
0 .1
3. TJM - TC
= P DM * Zθ JC(t)
0 .0 5
0 .0 2
PDM
t1
0 .0 1
t2
s in g le p u lse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VGS
VDD
VDS (t)
DUT
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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