FQB22P10TM [ONSEMI]
P 沟道 QFET® MOSFET -100V，-22A，125mΩ;
| 型号： | FQB22P10TM |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 QFET® MOSFET -100V，-22A，125mΩ 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：1079K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2013
FQB22P10
P-Channel QFET® MOSFET
-100 V, -22 A, 125 mΩ
Features
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
•
-22 A, -100 V, RDS(on) = 125 mΩ (Max) @VGS = -10 V,
ID = -11 A
•
•
•
•
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 160 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB22P10TM
-100
Unit
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
-22
A
D
C
- Continuous (T = 100°C)
-15.6
-88
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
±30
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
710
mJ
A
-22
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
mJ
V/ns
W
AR
dv/dt
-6.0
Power Dissipation (T = 25°C) *
3.75
P
A
D
Power Dissipation (T = 25°C)
125
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.83
W/°C
°C
T , T
-55 to +175
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
FQB22P10TM
Unit
RJC
Thermal Resistance, Junction to Case, Max.
1.2
62.5
40
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
oC/W
RJA
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
D2-PAK
330mm
24mm
800
FQB22P10TM
FQB22P10
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-100
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= -250 µA, Referenced to 25°C
-0.1
V/°C
D
/
∆T
I
V
V
V
V
= -100 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -80 V, T = 125°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-2.0
--
--
-4.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -11 A
0.096 0.125
D
g
= -40 V, I = -11 A
Forward Transconductance
--
13.5
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1170
460
160
1500
600
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
200
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
17
170
60
45
350
130
230
50
ns
ns
d(on)
V
= -50 V, I = -22 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
110
40
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -80 V, I = -22 A,
DS
D
7.0
21
--
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-22
-88
-4.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -22 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -22 A,
110
0.6
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, I = -22A, V = -25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -22A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Essentially independent of operating temperature
2
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
www.fairchildsemi.com
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
.5 V
101
100
Bottom:
1
10
175℃
25℃
-55℃
0
10
※
Notes :
※
Notes :
μ
1. V = -40V
DS μ
1. 250 s Pulse Test
2. TC = 25
2. 250 s Pulse Test
℃
-1
10
-1
10
0
10
1
10
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
VGS = - 10V
101
100
VGS = - 20V
25℃
※
Notes :
1. V = 0V
GS μ
2. 250 s Pulse Test
※
℃
Note: T = 25
J
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-VSD , Source-DrainVoltage [V]
0
10
20
30
40
50
60
70
80
90
100
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = -20V
VDS = -50V
10
8
C
iss
VDS = -80V
C
oss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
6
C
rss
4
2
※
Note : ID = -22 A
40
0
0
10
0
10
20
30
50
-1
0
10
1
10
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes:
1. V = 0 V
0.9
0.8
※
Notes :
2. IDG=S -250
A
μ
1. VGS = -10 V
2. ID = -11 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
101
100
100 µs
1 ms
10 ms
DC
※
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .2
0 .1
℃
/W M a x .
=
1 .2
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
1 0 -1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
4
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
www.fairchildsemi.com
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
V
GS
90%
VDS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
V
DUT
GS
IAS
t p
BVDSS
5
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
www.fairchildsemi.com
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
VDD
(N-Channel)
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
I SD
IRM
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
©2000 Fairchild Semiconductor Corporation
FQB22P10 Rev. C3
6
www.fairchildsemi.com
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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