FQB25N33TM-F085 [ONSEMI]
N 沟道，QFET® MOSFET，330V，25A，230mΩ;
| 型号： | FQB25N33TM-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，QFET® MOSFET，330V，25A，230mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：1271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQB25N33TM-F085
330V N-Channel MOSFET
Features
General Description
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe, DMOS technology.
•
•
•
•
•
•
•
•
25A, 330V, RDS(on) = 0.23Ω @VGS = 10V
Low gate charge (typical 58nC)
Low Crss (typical 40pF)
Fast switching
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficient switched mode power
supplies, active power factor correction, electronic lamp
ballast based on half bridge topology.
100% avalanche tested
Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant
Absolute Maximum Ratings
Symbol
Parameter
Ratings
330
Units
V
VDSS
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
25
A
ID
16.0
100
A
IDM
Drain Current
(Note 1)
A
VGSS
EAS
IAR
Gate -Source Voltage
±30
V
Single Pulse Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
370
mJ
A
25
EAR
dv/dt
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25oC) *
Power Dissipation (TC = 25oC)
37
mJ
V/ns
W
4.5
3.1
PD
250
W
- Derate above 25oC
2.0
W/oC
oC
TJ, TSTG Operating and Storage Temperature
-55 to +150
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
TL
300
oC
Thermal Characteristics
Symbol
Parameter
Ratings
0.5
Units
oC/W
oC/W
oC/W
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
40
RθJA
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Semiconductor Components Industries, LLC.
Septemeber-2017, Rev. 1
1
Publication Order Number:
FQB25N33TM-F085/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB25N33
FQB25N33TM-F085
D2-PAK
330mm
24mm
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
330
--
--
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC
0.34
V/oC
--
--
--
--
--
--
--
--
1
V
DS = 330V,VGS = 0V
IDSS
Zero Gate Voltage Drain Current
µA
VDS = 264V,TC =125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Forward
100
-100
nA
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
--
0.18
1
5.0
0.23
--
V
Ω
S
RDS(on) Drain to Source On Resistance
VGS = 10V, ID = 12.5A,
gFS
Forward Transonductance
V
DS = 50V, ID = 12.5A, (Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1510 2010
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
290
40
385
60
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
20
100
90
35
160
145
110
75
ns
ns
ns
ns
nC
nC
VDD = 165V, ID = 25A
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
R
GS = 25Ω
(Note 4, 5)
70
Qg(TOT) Total Gate Charge
VDS = 297V, ID = 25A,
GS = 15V,
58
V
Qgs
Gate to Source Gate Charge
11.2
--
Qgd
Gate to Drain Charge
--
21
--
nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
25
100
1.5
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS = 0, IS = 25A
--
V
275
3.6
ns
µC
V
GS = 0, IS = 25A,
dIF/dt = 100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1: Repetitive Rating : Pluse width Limited by maximum junction temperature
o
2: L = 1.79mH, I = 25A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
o
3: I ≤ 25A, di/dt ≤ 200A/µs, V
≤ BV
, Starting T = 25 C
SD
DD
DSS J
4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5: Essentially independent of operating temperature
www.onsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
VGS
Top :
15.0 V
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150oC
10
Bottom: 5.0 V
25oC
-55oC
1
1
* Notes :
1. VDS = 50V
* Notes :
1. 250µs Pulse Test
2. TC = 25oC
2. 250µs Pulse Test
0.1
0.1
2
4
6
8
10
1
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.45
0.40
100
10
VGS = 10V
0.35
1
150oC
0.30
0.25
0.1
25oC
0.01
0.20
VGS = 15V
1E-3
* Notes :
1. VGS = 0V
0.15
* Note : TJ = 25oC
50
2. 250µs Pulse Test
0.10
1E-4
0.0
0
10
20
30
40
60
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
4000
VDS = 66V
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
10
VDS = 165V
C
VDS = 264V
3000
2000
1000
0
8
6
4
2
C
iss
C
oss
* Note ;
1. VGS = 0 V
C
rss
2. f = 1 MHz
* Note : ID = 25A
0
0
10
20
30
40
50
60
70
0.1
1
10
100
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 250 µA
2. ID = 12.5 A
0.8
-100
-100
-50
0
50
100
150 200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
500
30
25
20
15
10
5
100
100 µs
1ms
10
1
10ms
DC
Operation in This Area
is Limited by R DS(on)
* Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
0
25
0.1
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
2
1
D
=
0
. 5
5
0
. 2
0
. 1
0
. 1
0
. 0
0
. 0
2
1
PDM
0 . 0
t1
t2
0
. 0 1
s i n g l e p u l s e
*
N
1
2
o
.
t e
Z
s
:
( t )
C
=
a
0
. 5 0 C / W
M
a
x .
θ
J
.
D
u
t y
F
c
t o r ,
D
=
t
1 / t 2
3
.
T
-
T
=
P
*
Z
( t )
θ J C
J
M
C
D
M
1
E - 3
- 5
- 4
- 3
- 2
-
1
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1 0
t 1
,
S q u a r e
W
a v e P u l s e
D
u r a t i o n [ s e c ]
www.onsemi.com
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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www.onsemi.com
❖
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