FQB47P06TM-AM002 [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-60 V，-47 A，26 mΩ，D2PAK;
| 型号： | FQB47P06TM-AM002 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-60 V，-47 A，26 mΩ，D2PAK 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：1273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQB47P06
P-Channel QFET® MOSFET
-60 V, -47 A, 26 mΩ
Features
• -47 A, -60 V, RDS(on) = 26 mΩ (Max.) @ VGS = .10 V,
ID = -23.5 A
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
•
•
•
•
Low Gate Charge (Typ. 84 nC)
Low Crss (Typ. 320 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQB47P06TM-AM002
Unit
V
Drain-Source Voltage
-60
-47
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
-33.2
-188
± 25
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
820
mJ
A
-47
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
16
mJ
V/ns
W
-7.0
3.75
160
Power Dissipation (TC = 25°C)
W
- Derate above 25°C
1.06
-55 to +175
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Unit
oC/W
FQB47P06TM-AM002
RJC
RJA
Thermal Resistance, Junction to Case, Max.
0.94
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
Publication Order Number:
FQB47P06TM-AM002/D
©2000 Semiconductor Components Industries, LLC.
September-2017,Rev.3
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
FQB47P06
D2-PAK
Tape and Reel
330 mm
800 units
24 mm
FQB47P06TM-AM002
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
∆BVDSS
/∆TJ
VGS = 0 V, ID = -250 µA
Drain-Source Breakdown Voltage
-60
--
--
--
--
V
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
-0.06
V/°C
IDSS
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
Zero Gate Voltage Drain Current
-10
IGSSF
IGSSR
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
VGS = 25 V, VDS = 0 V
On Characteristics
VGS(th)
VDS = VGS, ID = -250 µA
Gate Threshold Voltage
-2.0
--
--
-4.0
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -23.5 A
0.021 0.026
gFS
VDS = -30 V, ID = -23.5 A
Forward Transconductance
--
21
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
2800
1300
320
3600
1700
420
pF
pF
pF
V
DS = -25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
50
450
100
195
84
110
910
210
400
110
--
ns
ns
V
DD = -30 V, ID = -23.5 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = -48 V, ID = -47 A,
GS = -10 V
Qgs
Qgd
18
V
44
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-47
-188
-4.0
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -47 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = -47 A,
130
0.55
ns
µC
dIF / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.43 mH, I = -47 A, V = -25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ -47 A, di/dt ≤ 300 A/µs , V ≤ BV
starting T = 25°C.
DSS, J
SD
DD
Essentially independent of operating temperature.
4.
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2
Typical Characteristics
VGS
102
101
100
102
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
175oC
101
25oC
-55oC
* Notes :
1. VDS = -30V
* Notes :
1. 250µs Pulse Test
2. TC = 25oC
100
2. 250µs Pulse Test
-1
10
-1
10
100
101
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.10
102
101
100
0.08
0.06
0.04
0.02
0.00
VGS = - 10V
VGS = - 20V
175oC
25oC
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
2. 250µs Pulse Test
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0
100
200
300
400
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
8000
7000
6000
5000
4000
3000
2000
1000
0
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
C
C
10
8
VDS = -30V
VDS = -48V
C
oss
C
iss
* Notes :
1. VGS = 0 V
6
2. f = 1 MHz
4
C
rss
2
* Note : ID = -47 A
0
-1
100
101
0
10
20
30
40
50
60
70
80
90
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
(Continued)
Typical Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = -10 V
2. ID = -250µA
2. ID = -23.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
103
50
40
30
20
10
0
Operation in This Area
is Limited by R DS(on)
102
101
100
100 µs
1 ms
10 ms
DC
* Notes :
1. TC = 25 o
C
2. TJ = 175 o
C
3. Single Pulse
-1
10
25
50
75
100
125
150
175
100
101
102
TC, Case Temperature [oC]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
*
N o te s
1 . θ J C (t)
2 . D u ty F a c to r, D = t1 /t2
:
Z
=
0 .9 4 o C /W M a x .
0 .2
1 0 -1
0 .1
3 . T J M
- T C = P D M * Z θ J C (t)
0 .0 5
PDM
0 .0 2
0 .0 1
t1
t2
s in g le p u ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
VGS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
VGS
DUT
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
FM , Body Diode Forward Current
VSD
I
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
2
Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount
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any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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