FQD1N60CTM [ONSEMI]
功率 MOSFET，N 沟道，QFET®，600 V，1 A，11.5 Ω，DPAK;
| 型号： | FQD1N60CTM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，600 V，1 A，11.5 Ω，DPAK |
| 文件： | 总8页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FQD1N60C / FQU1N60C
®
N-Channel QFET MOSFET
600 V, 1.0 A, 11.5 Ω
Features
Description
•
1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V,
D = 0.5 A
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
I
•
•
•
•
Low Gate Charge (Typ. 4.8 nC)
Low Crss (Typ. 3.5 pF)
100% Avalanche Tested
RoHS Compliant
D
D
G
S
I-PAK
G
D-PAK
G
D
S
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
FQD1N60CTM / FQU1N60CTU
Unit
V
Drain-Source Voltage
600
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
1
A
ID
0.6
A
IDM
(Note 1)
Drain Current
4
± 30
33
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
1
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
2.8
mJ
V/ns
W
4.5
2.5
PD
Power Dissipation (TC = 25°C)
28
W
- Derate Above 25°C
0.22
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8’’ from Case for 5 Seconds
300
°C
Thermal Characteristics
FQD1N60CTM /
FQU1N60CTU
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
4.53
Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction-to-Ambient (*1 in2 Pad of 2-oz Copper), Max.
110
50
°C/W
Semiconductor Components Industries, LLC, 2017
May, 2017, Rev.1.5
Publication Order Number:
FQD1N60C / FQU1N60C
1
Package Marking and Ordering Information
Part Number
FQD1N60CTM
FQU1N60CTU
Top Mark
FQD1N60C
FQU1N60C
Package
D-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16mm
Quantity
2500 units
70 units
N/A
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
Drain-Source Breakdown Voltage
600
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
I
0.6
V/°C
/
ΔTJ Coefficient
V
V
DS = 600 V, VGS = 0 V
DS = 480 V, TC = 125°C
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
2.0
--
--
4.0
11.5
--
V
Ω
S
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
9.3
V
GS = 10 V, ID = 0.5 A
--
0.75
VDS = 40 V, ID = 0.5 A
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
130
19
170
25
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
3.5
4.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
7
24
52
36
64
6.2
--
ns
ns
VDD = 300 V, ID = 1.1 A,
21
13
27
4.8
0.7
2.7
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 480 V, ID = 1.1 A,
Qgs
Qgd
VGS = 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1
4
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 0.5 A
GS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/μs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
1.4
--
V
V
190
0.53
ns
μC
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : pulse-width limited by maximum junction temperature.
2. L = 59 mH, I
=
1.1 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 1.1 A, di/dt ≤ 200 A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
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2
Typical Characteristics
VGS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
100
150oC
Bottom: 4.5V
-55oC
25oC
-1
10
∝Notes :
1. 250レs Pulse Test
2. TC = 25∩
∝ Notes :
1. VDS = 40V
2. 250レs Pulse Test
-1
10
-2
10
-1
2
4
6
8
10
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
5
VGS = 10V
100
VGS = 20V
150∩
∝
Notes
1. VGS
2. 250
:
=
レ
0V
s Pulse Test
25∩
∝Note : T = 25∩
J
10-1
0.2
0
0.0
0.4
0.6
0.8
1.0
1.2
1.4
0.5
1.0
1.5
2.0
2.5
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
250
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
gd
rss = Cds
gd
VDS = 120V
VDS = 300V
10
8
200
150
100
50
C
iss
VDS = 480V
C
oss
6
4
∝Notes ;
1. VGS = 0 V
2. f =1 MHz
C
rss
2
∝Note : ID = 1A
0
0
10
-1
1
10
100
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
∝Notes:
1. VGS = 0 V
2. ID= 250 レA
0.9
∝Notes :
1. VGS = 10 V
2. ID = 0.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
1.2
101
Operation in This Area
is Limited by R DS(on)
1.0
0.8
0.6
0.4
0.2
0.0
100 μs
100
1 ms
10 ms
100 ms
DC
-1
10
∝Notes :
1. TC = 25 o
C
2. T = 150 o
C
J
3. Single Pulse
-2
10
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [∩]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
D = 0 .5
∝
N otes
1. JC(t)
2. Dヨuty Factor, D =t1/t2
:
Z
= 4.53 ∩ /W M ax.
1 00
0 .2
3. TJM
-
TC
=
P DM
*
Zヨ JC(t)
0 .1
PDM
0 .0 5
t1
t2
0 .0 2
0 .0 1
1 0 -1
sin g le p u ls e
1 0-5
1 0 -4
1 0-3
1 0 -2
1 0 -1
1 00
10 1
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
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4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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