FQD2P40TM [ONSEMI]
功率 MOSFET,P 沟道,QFET®,-400 V,-1.56 A,6.5 Ω,DPAK;型号: | FQD2P40TM |
厂家: | ONSEMI |
描述: | 功率 MOSFET,P 沟道,QFET®,-400 V,-1.56 A,6.5 Ω,DPAK 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:868K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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May 2015
FQD2P40
P-Channel QFET® MOSFET
-400 V, -1.56 A, 6.5 Ω
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications..
• -1.56 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V,
ID = -0.78 A
•
•
•
•
Low Gate Charge (Typ. 10 nC)
Low Crss (Typ. 6.5 pF)
100% Avalanche Tested
RoHS Compliant
S
D
G
G
S
D-PAK
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQD2P40TM
-400
Unit
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
-1.56
-0.98
-6.24
± 30
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
120
mJ
A
-1.56
3.8
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
AR
dv/dt
-4.5
Power Dissipation (T = 25°C) *
2.5
P
A
D
Power Dissipation (T = 25°C)
38
W
C
- Derate above 25°C
0.3
W/°C
°C
T , T
Operating and Storage Temperature Range
-55 to +150
J
STG
Maximum lead temperature for soldering,
1/8” from case for 5 seconds
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Unit
FQD2P40TM
RJC
RJA
Thermal Resistance, Junction to Case, Max.
3.29
110
50
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
oC/W
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size
330 mm
Tape Width
Quantity
FQD2P40TM
FQD2P40
D-PAK
16 mm
2500 units
Tape and Reel
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-400
--
--
-
--
--
V
DSS
∆BV
/ ∆T
Breakdown Voltage Temperature
Coefficient
DSS
I
= -250 µA, Referenced to 25°C
V/°C
D
J
I
V
V
V
V
= -400 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -320 V, T = 125°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-3.0
--
--
-5.0
6.5
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -0.78 A
5.0
D
g
= -50 V, I = -0.78 A
Forward Transconductance
--
1.26
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
270
45
350
60
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
6.5
8.5
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
9
30
75
55
60
13
--
ns
ns
d(on)
V
= -200 V, I = -2.0 A,
DD
D
33
22
25
10
2.1
5.5
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -320 V, I = -2.0 A,
DS
D
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-1.56
-6.24
-5.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -1.56 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -2.0 A,
250
0.85
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 86 mH, I = -1.56 A, V = -50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ -2.0 A, di/dt ≤ 200 A/µs, V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
2
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100
Bottom : -5.5 V
100
℃
150
-1
10
℃
25
※
Notes :
※
Notes :
μ
1. 250 s Pulse Test
℃
-55
1. VDS = -50V
℃
2. TC = 25
μ
2. 250 s Pulse Test
-2
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
VGS = - 10V
VGS = - 20V
100
6
℃
25
℃
150
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
4
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
600
500
400
300
200
100
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = Cgd
VDS = -80V
VDS = -200V
VDS = -320V
C
iss
6
Coss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
4
C
rss
2
※
Note : ID = -2.0 A
10
0
-1
10
100
101
4
0
2
6
8
12
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
3
(Continued)
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = -250 μA
※
Notes :
1. VGS = -10 V
2. ID = -1.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.5
1.2
0.9
0.6
0.3
0.0
Operation in This Area
is Limited by R DS(on)
101
100
100 µs
1 ms
10 ms
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
※
N o te s
:
℃
/W M a x .
1 . Z θ C (t)
=
3 .2 9
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D Z θ C (t)
0 .2
J
-
=
*
M
J
0 .1
0 .0 5
0 .0 2
PDM
1 0 -1
0 .0 1
t1
s in g le p u ls e
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
VGS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
VGS
DUT
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
FM , Body Diode Forward Current
VSD
I
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FQD2P40 Rev. 1.3
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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