FQD9N25TM-F080 [ONSEMI]
功率 MOSFET，N 沟道，QFET®， 250 V，7.4 A，420 mΩ，DPAK;
| 型号： | FQD9N25TM-F080 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®， 250 V，7.4 A，420 mΩ，DPAK |
| 文件： | 总11页 (文件大小：1074K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FQD9N25 / FQU9N25
N-Channel QFET® MOSFET
250 V, 7.4 A, 420 mΩ
Features
7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V,
ID = 3.7 A
•
Description
•
•
•
Low Gate Charge (Typ. 15.5 nC)
Low Crss (Typ. 15 pF)
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
100% Avalanche Tested
D
D
G
I-PAK
G
S
D-PAK
G
D
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter
S
FQD9N25TM
FQD9N25TM-F080
Unit
FQU9N25TU
)*+
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Thermal Characteristics
FQD9N25TM
FQD9N25TM-F080
Symbol
Parameter
Unit
FQU9N25TU
RJC
RJA
Thermal Resistance, Junction to Case, Max.
2.27
110
50
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
oC/W
Publication Order Number:
FQU9N25/D
©2000 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Package Marking and Ordering Information
Part Number
FQD9N25TM
Top Mark
FQD9N25
FQD9N25
FQU9N25
Package
D-PAK
D-PAK
I-PAK
Packing Method Reel Size
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
70 units
330 mm
330 mm
N/A
Tape and Reel
Tape and Reel
Tube
FQD9N25TM-F080
FQU9N25TU
Electrical Characteristics TC = 25oC unless otherwise noted.
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.8 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 9.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
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ꢀ ꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢄꢄꢊꢇꢋꢂꢌꢍꢎ
ꢁꢀ
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ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ
ꢊꢎꢛꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
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ꢀꢗꢀꢘ ꢀꢙꢀꢘ ꢀꢚꢘ ꢀꢗꢀꢒꢛꢃꢜꢎꢑꢝꢞ
ꢆꢅ ꢆꢇ ꢇꢅ
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ꢀꢀꢀꢓꢈꢀ ꢀꢗꢀꢆꢀ!"#
ꢅꢆꢆ
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ꢀꢁꢂꢃꢄꢀꢆꢀꢒ ꢀꢊꢀꢓꢈꢔꢀꢕ
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ꢁꢂꢃꢄꢅꢆꢇꢐꢑꢒꢉꢄꢓꢊꢂꢏꢒꢔꢋꢅꢕꢊꢂꢌꢏꢎ
ꢗ ꢁꢂꢘꢒꢋꢅꢔꢂꢖꢅꢋꢊꢂꢈꢙꢅꢄꢕꢊꢂꢌꢇꢈꢎ
ꢂ
ꢀꢁ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
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3
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ
ꢂ
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ꢅꢊꢃ
ꢅꢊꢁ
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ꢂꢅꢇ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢀꢉ
ꢀꢁ
ꢀ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢀꢀꢀꢌꢈꢀꢍ ꢀꢊꢀꢌꢎꢋꢀꢁꢏ
ꢂ
ꢀꢀꢀꢆꢈꢀꢁ ꢀꢗꢀꢆꢉꢀꢁ
ꢀꢁ
ꢀꢀꢀꢓꢈꢀ0 ꢀꢗꢀ1ꢈꢋꢀ(
ꢃ
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ꢘ ꢁꢂ#ꢉꢇꢓꢋꢆꢒꢇꢂꢘꢊ"ꢚꢊꢄꢅꢋꢉꢄꢊꢂꢌꢆꢈꢎ
ꢀ ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢂꢀꢊꢋꢌꢊꢍꢎꢇꢄꢍꢊꢂꢏꢃꢐꢑ
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ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀꢁꢂꢃꢄꢅꢆ/ꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
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ꢙꢐꢈꢆꢆꢉꢊꢐꢅꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢕ ꢋ ꢀ ꢁꢇ
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ꢂ
ꢀꢀꢀꢇ ꢈꢀꢖ ꢊ ꢂꢗꢃꢘ ꢀꢊ ꢀꢌ ꢈꢌ ꢙ ꢀ ꢚꢛ ꢀꢜ ꢝ ꢞ ꢈ
ꢀ
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ꢀ ꢁꢅ
ꢀꢀꢀ& ꢈꢀꢑ ꢊ ꢍ ꢀ'ꢀꢑ ꢂ ꢀꢊ ꢀꢎ ꢃ ꢀ( ꢀꢖ ꢊ ꢂꢗꢃꢘ
ꢀ
ꢍ
ꢀ ꢁꢀ ꢇ
"
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ꢋ
ꢁꢂꢑ ꢜ ꢉ ꢅ ꢄꢊ ꢂꢝ ꢅ ꢞ ꢊ ꢂ ꢉ ꢔ! ꢊ ꢂꢃ ꢉ ꢄꢅ ꢋꢆꢒ ꢇ ꢂꢌ! ꢊ ꢓ ꢎ
ꢃ
ꢀꢁꢂꢃꢄꢅꢆ''ꢈꢆ#ꢄꢊꢎꢐꢁꢅꢎꢍꢆ#ꢏꢅꢄ$ꢊꢜꢆꢖꢅꢐꢋꢘꢎꢐꢅꢆꢉꢃꢄꢙꢅ
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
7
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM_F080
Figure 17. 3LD, TO-252, Jedec TO-252 VAR. AB, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
8
Mechanical Dimensions
TO-251 3L (IPAK)
Figure 18. TO251 (IPAK) Molded 3 Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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9
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