FQH44N10-F133 [ONSEMI]
N 沟道 QFET® MOSFET 100V，48A，39mΩ;
| 型号： | FQH44N10-F133 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 100V，48A，39mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel, QFET)
100 V, 48 A, 39 mW
FQH44N10
Description
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, audio
amplifier, DC motor control, and variable switching power
applications.
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V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
39 mW @ 10 V
48 A
D
Features
• 48 A, 100 V, R
= 39 mW (Max.) @ V = 10 V,
GS
DS(on)
I = 24 A
D
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 85 pF)
G
• 100% Avalanche Tested
S
• 175°C Maximum Junction Temperature Rating
POWER MOSFET
G
D
S
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FQH
44N10
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FQH44N10
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
March, 2021 − Rev. 5
FQH44N10/D
FQH44N10
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
FQH44N10−133
Unit
V
V
DSS
Drain−Source Voltage
100
48
I
D
Drain Current
Continuous (T = 25°C)
A
C
Continuous (T = 100°C)
34
C
I
Drain Current
Pulsed (Note 1)
192
25
A
V
DM
V
GSS
Gate−Source Voltage
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
530
48
mJ
A
AS
AR
I
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
18
mJ
V/ns
W
AR
dv/dt
6.0
P
(T = 25°C)
180
1.2
D
C
Derate Above 25°C
W/°C
°C
T , T
Operating and Storage Temperature Range
−55 to +175
300
J
STG
T
Maximum Lead Temperature for Soldering Purpose
1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. L = 0.345 mH, I = 48 A, V = 25 V, R = 25 W, starting T = 25°C.
AS
DD
G
DSS
J
3. I ≤ 43.5 A, di/dt ≤ 300 A/ms, V ≤ BV
, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FQH44N10−133
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case−to−Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
0.83
0.24
40
_C/W
_C/W
_C/W
q
JC
q
CS
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQH44N10−133
FQH44N10
TO−247
Tube
N/A
N/A
30 Units
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2
FQH44N10
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
100
V
DSS
GS
D
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
0.1
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 100 V, V = 0 V
1
mA
DSS
GS
= 80 V, T = 150_C
10
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 25 V, V = 0 V
100
−100
nA
nA
GSSF
DS
I
= −25 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 mA
2.0
4.0
V
W
S
GS(th)
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 24 A
0.03
31
0.039
D
g
FS
= 40 V, I = 24 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1.0 MHz
1400
425
85
1800
550
110
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 50 V, I = 43.5 A, R = 25 W
19
190
90
45
390
190
210
62
ns
ns
d(on)
DD
D
g
(Note 4)
t
r
t
ns
d(off)
t
f
100
48
ns
Q
V
DS
= 80 V, I = 43.5 A, V = 10 V
nC
nC
nC
g
D
GS
(Note 4)
Q
9.0
24
gs
gd
Q
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
48
192
1.5
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 48A
V
GS
S
t
rr
= 0 V, I = 43.5 A,
98
ns
nC
GS
S
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
360
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FQH44N10
TYPICAL PERFORMANCE CHARACTERISTICS
Top V
GS
:
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
2
10
2
1
10
175°C
1
10
Bottom : 4.5 V
10
25°C
−55°C
0
10
* Notes :
1. 250 ms Pulse Test
* Notes :
1. V =40 V
DS
2. T = 25 °C
C
2. 250 ms Pulse Test
0
−1
2
10
10
−1
0
1
4
6
8
10
10
10
10
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
2
1
10
V
= 10 V
GS
10
V
= 20 V
GS
0
10
* Notes :
175°C 25°C
1. V = 0 V
DS
* Notes : T = 25°C
J
2. 250 ms Pulse Test
−1
10
0
30
60
90
120
150
180
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I , Drain Current (A)
D
V
SD
, Source−Drain Voltage (V)
Figure 3. On−Resistance Variation
Figure 4. Body Diode Forward Voltage
vs. Drain Current and Gate Voltage
Variation vs. Source Current and Temperature
12
4000
3500
3000
2500
2000
1500
1000
500
C
C
C
= C + C (C = shorted)
iss
gs
gd
ds
= C + C
V
DS
= 50 V
oss
rss
ds
gd
10
8
= C
gd
V
DS
= 80 V
* Notes :
1. V = 0 V
2. f = 1 MHz
GS
C
iss
6
4
C
oss
C
rss
2
* Notes : I = 43.5 A
D
0
0
−1
0
1
10
10
10
0
10
20
30
40
50
V
DS
, Drain−Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FQH44N10
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
2.5
2.0
1.5
1.2
1.1
1.0
0.9
0.8
1.0
* Notes:
* Notes:
1. V = 0 V
1. V = 10 V
0.5
GS
GS
2. I = 21.75 A
D
2. I = 250 mA
D
0.0
−100
−100
−50
0
50
100
150
200
−50
0
50
100
150
200
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage
Variation vs. Temperature
Figure 8. On−Resistance
Variation vs. Temperature
50
40
30
20
10
0
3
10
10
10
Operation in This Area is
Limited by R
DS(on)
10 ms
2
1
100 ms
1 ms
10 ms
DC
* Notes:
1. T = 25 °C
0
10
C
2. T = 175 °C
J
3. Single Pulse
−1
10
0
1
2
10
10
10
25
50
75
100
125
150
175
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (5C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain
Current vs. Case Temperature
0
10
D=0.5
0.2
* Notes :
1. Z (t) = 0.83 °C/W Max.
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
0.1
−1
JM
C
DM
10
0.05
PDM
0.02
0.01
t1
t2
Single Pulse
−2
10
−5
−4
−3
−2
−1
−0
1
10
10
10
10
10
10
10
t1, Square Wave Pulse Duration (sec)
Figure 11. Transient Thermal Response Curve
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5
FQH44N10
V
GS
Q
g
50 kW
Same Type
as DUT
12 V
200 nF
300 nF
Q
Q
gs
gd
V
DS
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
L IAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FQH44N10
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
Body Diode Recovery dv/dt
(DUT)
V
DD
V
SD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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