FQI5N60CTU [ONSEMI]
N 沟道 QFET® MOSFET 600 V、4.5 A、2.5 Ω;
| 型号： | FQI5N60CTU |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 600 V、4.5 A、2.5 Ω |
| 文件： | 总9页 (文件大小：1017K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQI5N60C
®
N-Channel QFET MOSFET
600 V, 4.5 A, 2.5 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•
•
•
•
4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A
Low Gate Charge (Typ. 15 nC)
Low Crss (Typ. 6.5 pF)
100% Avalanche Tested
D
G
G
I2-PAK
D
S
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
FQI5N60CTU
Unit
V
Drain-Source Voltage
600
4.5
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
2.6
A
IDM
(Note 1)
Drain Current
18
A
VGSS
EAS
IAR
Gate-Source Voltage
30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
210
mJ
A
4.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
10
mJ
V/ns
W
4.5
100
PD
- Derate above 25°C
0.8
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
-55 to +150
300
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQI5N60CTU
Unit
RθJC
RθJA
1.25
62.5
°C/W
PPublication Order Number:
©2003 SSemiconductor Components Industries, LLC.
October-2017,Rev.3
FQI5N60C/D
Package Marking and Ordering Information
Device Marking
Device
Package
I2-PAK
Reel Size
Tape Width
Quantity
FQI5N60C
FQI5N60CTU
Tube
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
600
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C
0.6
V/°C
/
ΔTJ Coefficient
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 2.25 A
VDS = 40 V, ID = 2.25 A
Gate Threshold Voltage
2.0
--
--
4.0
2.5
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
2.0
4.7
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
515
55
670
72
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
6.5
8.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
10
42
38
46
15
2.5
6.6
30
90
85
100
19
--
ns
ns
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
VDS = 480 V, ID = 4.5A,
GS = 10 V
Qgs
Qgd
V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.5
18
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 4.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 4.5 A,
300
2.2
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9 mH, I = 4.5 A, V = 50V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 4.5 A, di/dt ≤ 200 A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
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2
Typical Characteristics
VGS
101
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
150oC
-55oC
Bottom : 4.5 V
25oC
100
-1
10
※ Notes :
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
1. VDS = 40V
2. 250μs Pulse Test
-1
10
-2
10
2
4
6
8
10
-1
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
101
VGS = 10V
100
150℃
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : T = 25℃
J
-1
10
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
800
600
400
200
0
12
10
8
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
C
6
oss
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 4.5A
0
0
4
8
12
16
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※ Notes :
1. VGS = 10 V
2. ID = 2.25 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
100
100 μs
1 ms
10 ms
100 ms
DC
-1
10
※Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
-2
10
10
101
10
0
2
3
10
25
50
75
100
125
150
TC, Case Temperature [℃]
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
1 0 0
D = 0 .5
0 .2
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D M Z θ JC(t)
:
1 0 -1
=
1 .2 5 ℃ /W M a x.
0 .0 5
-
=
*
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
1 0 -2
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
2
Figure 16. TO262 (I PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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