FQI8N60CTU [ONSEMI]
N 沟道 QFET® MOSFET 600V,7.5A,1.2Ω;型号: | FQI8N60CTU |
厂家: | ONSEMI |
描述: | N 沟道 QFET® MOSFET 600V,7.5A,1.2Ω 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:881K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FQB8N60C / FQI8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Features
7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V,
ID = 3.75 A
•
Description
•
•
•
•
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
RoHS Compliant
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
D
G
G
G
I2-PAK
D
S
D2-PAK
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQB8N60CTM / FQI8N60CTU
Unit
V
V
I
Drain-Source Voltage
600
7.5
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
4.6
A
C
I
(Note 1)
Drain Current
- Pulsed
30
A
DM
V
E
I
Gate-Source Voltage
± 30
230
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
7.5
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
14.7
4.5
mJ
V/ns
W
AR
dv/dt
Power Dissipation (T = 25°C)*
3.13
147
A
P
Power Dissipation (T = 25°C)
W
D
C
- Derate above 25°C
1.18
-55 to +150
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
J
STG
T
300
°C
L
Thermal Characteristics
FQB8N60CTM /
FQI8N60CTU
Symbol
Parameter
Unit
RJC
RJA
Thermal Resistance, Junction to Case, Max.
0.85
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
62.5
40
oC/W
Publication Order Number:
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FQI8N60C/D
Package Marking and Ordering Information
Part Number
FQB8N60CTM
FQI8N60CTU
Top Mark
FQB8N60C
FQI8N60C
Package
D2-PAK
I2-PAK
Packing Method Reel Size
Tape Width
Quantity
330 mm
N/A
24 mm
800 units
Tape and Reel
Tube
N/A
50 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
600
--
--
--
--
V
DSS
∆BV
/ ∆T
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.7
V/°C
D
J
I
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
10
DS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
V
= -30 V, V = 0 V
GSSR
GS
DS
On Characteristics
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
1.2
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
V
= 10 V, I = 3.75 A
1.0
8.7
D
g
V
= 40 V, I = 3.75 A
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
965
105
12
1255
135
16
pF
pF
pF
iss
V
= 25 V, V = 0 V,
DS
GS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
16.5
60.5
81
45
130
170
140
36
ns
ns
d(on)
V
= 300 V, I = 7.5A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
64.5
28
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 480 V, I = 7.5A,
DS
D
4.5
12
--
= 10 V
gs
gd
GS
(Note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
7.5
30
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 7.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 7.5 A,
365
3.4
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.L = 7.3 mH, I = 7.5 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
≤ 7.5 A, di/dt ≤ 200 A/µs , V ≤ BV
starting T = 25°C.
I
3.
SD
DD
DSS,
J
4.
Essentially independent of operating temperature.
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ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
10
101
150oC
Bottom: 5.0V
25oC
0
10
-55oC
100
※
Notes :
1. VDS = 40V
μ
※
Notes :
-1
10
μ
1. 250 s Pulse Test
2. TC = 25
2. 250 s Pulse Test
℃
-1
10
2
4
8
10
-1
10
0
10
6
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
VGS = 10V
0
10
VGS = 20V
※
Notes :
1. VGS = 0V
μ
℃
150
℃
25
※
℃
2. 250 s Pulse Test
Note : T = 25
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1800
1600
1400
1200
1000
800
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = Cgd
VDS = 120V
VDS = 300V
C
iss
VDS = 480V
6
C
oss
4
※
Notes ;
600
1. VGS = 0 V
2. f = 1 MHz
C
rss
400
2
200
※
Note : ID = 8A
25
0
0
10
0
5
10
15
20
30
-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
(Continued)
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID= 250 μA
※
Notes :
1. VGS = 10 V
2. ID = 4 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2
10
8
6
4
2
0
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
1
10
100 ms
DC
0
10
-1
10
※
Notes :
1. TC = 25 o
2. T = 150 o
C
C
J
3. Single Pulse
-2
10
0
10
1
10
2
10
3
10
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
℃
]
TC, Case Temperature [
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
1 0 0
D = 0 .5
0 .2
1 0 -1
0 .1
0 .0 5
※
N o te s
1 . Z θ JC (t)
2 . D uty Fa c to r, D = t1/t2
:
℃
/W M a x.
=
0.85
0 .0 2
0 .0 1
3 . T JM
-
T C
=
P D
* Z θ JC (t)
M
PDM
s in g le p u ls e
1 0 -2
t1
t2
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
2
Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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7
Mechanical Dimensions
2
Figure 17. TO262 (I PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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