FQP17P10 [ONSEMI]
P 沟道，QFET® MOSFET，-100V，-16.5A，190mΩ;
| 型号： | FQP17P10 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，QFET® MOSFET，-100V，-16.5A，190mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel, QFET)
-100 V, -16.5 A, 190 mW
FQP17P10
V
R
MAX
I MAX
D
DS
DS(ON)
−100 V
0.19 W @ −10 V
−16.5 A
D
General Description
This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored to reduce
on−state resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor control,
and variable switching power applications.
G
S
P−Channel MOSFET
Features
• −16.5 A, −100 V, R
= 190 mW (Max.) at V = −10 V,
GS
DS(on)
I = −8.25 A
D
• Low Gate Charge (Typ. 30 nC)
• Low C (Typ. 100 pF)
G
rss
D
S
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
• This is a Pb−Free Device
TO−220−3LD
CASE 340AT
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Drain−Source Voltage
Drain Current Continuous (T = 25°C)
Ratings
−100
−16.5
−11.7
−66
Unit
V
V
DSS
I
D
A
C
$Y&Z&3&K
FQP
17P10
Continuous (T = 100°C)
C
I
Drain Current Pulsed (Note 1)
A
V
DM
V
GSS
Gate−Source Voltage
30
E
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
580
mJ
A
AS
I
−16.5
10
AR
E
AR
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
mJ
V/ns
W
dv/dt
−6.0
100
$Y
= onsemi Logo
P
Power
Dissipation
(T = 25°C)
D
C
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
Derate above 25°C
0.67
W/°C
°C
T , T
Operating and Storage Temperature
Range
−55 to
+175
J
STG
FQP17P10
= Specific Device Code
T
L
Maximum Lead Temperature for
Soldering, 1/8″ from Case for 5 Seconds
300
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
FQP17P10
Package
Shipping
TO−220−3LD
(Pb−Free)
50 Units/
Tube
1. Repetitive rating: pulse−width limited by maximum junction temperature
2. L = 3.2 mH, I = −16.5 A, V = −25 V, R = 25 W, Starting T = 25°C
AS
DD
G
DSS
J
3. I ≤ −16.5 A, di/dt ≤ 300 A/ms, V ≤ BV
, Starting T = 25°C
J
SD
DD
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2022 − Rev. 3
FQP17P10/D
FQP17P10
THERMAL CHARACTERITICS
Symbol
Parameter
Ratings
1.5
Unit
°C/W
°C/W
°C/W
R
R
Maximum Thermal Resistance, Junction to Case
q
JC
Thermal Resistance, Case−to−Sink, Typ.
0.5
q
CS
R
Maximum Thermal Resistance, Junction to Ambient
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = −250 mA
−100
−
−
−
V
DSS
GS
D
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−
−0.1
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= −100 V, V = 0 V
−
−
−
−
−
−
−1
−10
−100
100
mA
DSS
GS
= −80 V, T = 150 °C
C
I
Gate −Body Leakage Current, Forward
Gate −Body Leakage Current, Reverse
= −30 V, V = 0 V
nA
nA
GSSF
DS
I
= 30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = −250 mA
−2.0
−
−
−4.0
0.19
−
V
W
S
GS(th)
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= −10 V, I = −8.25 A
0.14
9.9
D
g
FS
= −40 V, I = −8.25 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −25 V, V = 0 V, f = 1.0 MHz
−
−
−
850
310
100
1100
400
130
pF
pF
pF
iss
oss
rss
GS
C
C
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= −50 V, I = −16.5 A,
−
−
−
−
−
−
−
17
200
45
45
410
100
210
39
ns
ns
d(on)
DD
G
D
R
= 25 W
t
r
(Note 4)
t
ns
d(off)
t
f
100
30
ns
Q
V
DS
V
GS
= −80 V, I = −16.5 A
nC
nC
nC
g
D
,
= −10 V
Q
4.8
17
−
gs
gd
(Note 4)
Q
−
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
−16.5
−66
−4.0
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = −16.5 A
−
V
GS
S
t
rr
= 0 V, I = −16.5 A,
120
0.52
ns
mC
GS
S
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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2
FQP17P10
TYPICAL CHARACTERISTICS
1
1
10
10
175°C
V
GS
Top: −15.0 V
−10.0 V
0
0
10
10
−8.0 V
−55°C
25°C
−7.0 V
−6.5 V
−5.5 V
−5.0 V
*Notes:
1. 250 ms Pulse Test
*Notes:
1. V = −40 V
DS
2. T = 25°C
2. 250 ms Pulse Test
C
Bottom: −4.5 V
−1
−1
10
10
−1
0
1
10
10
10
2
4
8
10
6
−V , Drain−Source Voltage [V]
DS
−V , Gate−Source Voltage (V)
GS
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
1
10
V
= −10 V
GS
V
GS
= −20 V
0
10
25°C
*Notes:
175°C
0.1
0.0
1. V = 0 V
GS
*Note: T = 25°C
J
2. 250 ms Pulse Test
−1
10
0
60
80
20
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
−I , Drain Current (A)
D
−V , Source−Drain Voltage (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Current and Gate Voltage
2200
2000
1800
1600
1400
1200
1000
800
12
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
oss
rss
ds
gd
C
oss
= C
gd
10
8
V
DS
V
DS
V
DS
= −20 V
= −50 V
= −80 V
C
iss
*Notes:
1. V = 0 V
GS
2. f = 1 MHz
6
C
rss
4
600
400
2
200
*Note: I = −16.5 A
D
0
0
−1
0
1
0
5
10
15
20
25
30
35
10
10
10
Q , Total Gate Charge (nC)
G
V
DS
, Drain−Source Voltage (V)
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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3
FQP17P10
TYPICAL CHARACTERISTICS (continued)
1.2
1.1
2.5
2.0
1.5
1.0
1.0
0.9
0.8
*Notes:
*Notes:
0.5
0.0
1. V = −10 V
1. V = 0 V
GS
GS
2. I = −8.25 A
2. I = −250 mA
D
D
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction Temperature 〈°C)
J
T , Junction Temperature 〈°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
20
Operation in This Area
is Limited by R
DS(on)
2
1
10
16
12
8
100 ms
1 ms
10 ms
DC
10
0
10
*Notes:
1. T = 25°C
4
C
2. T = 175°C
J
3. Single Pulse
−1
10
0
0
1
2
10
10
10
25
50
75
100
125
150
175
−V , Drain−Source Voltage (V)
DS
T , Case Temperature (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
D=0.5
0.2
*Notes:
1. Z (t) = 1.5°C/W Max.
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
0.1
0.05
P
DM
0.02
t
1
0.01
t
2
Single Pulse
−5
−4
−3
−2
−1
0
1
0
10
10
10
10
10
10
t , Square Wave Pulse Duration (s)
1
Figure 11. Transient Thermal Response Curve
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4
FQP17P10
Same Type
as DUT
V
GS
50 kW
Q
g
12 V
−10 V
200 nF
300 nF
V
DS
Q
Q
gs
gd
V
GS
DUT
−3 mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
t
off
t
on
V
DS
t
r
t
f
V
DD
t
V
GS
t
d(off)
d(on)
V
GS
R
G
10%
DUT
−10 V
90%
V
DS
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
tp
Time
I
D
V
DS
(t)
V
DD
R
G
V
DD
I (t)
D
DUT
−10 V
I
AS
t
p
BV
DSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
FQP17P10
+
V
DS
DUT
−
I
SD
L
Driver
R
G
Compliment of DUT
(N−Channel)
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
SD
(DUT)
I
RM
di/dt
I
, Body Diode Reverse Current
FM
V
DS
(DUT)
V
DD
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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