FQPF19N20C [ONSEMI]
功率 MOSFET,N 沟道,QFET®,200 V,19 A,170 mΩ,TO-220F;型号: | FQPF19N20C |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,QFET®,200 V,19 A,170 mΩ,TO-220F 局域网 开关 脉冲 晶体管 |
文件: | 总12页 (文件大小:793K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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November 2013
FQP19N20C / FQPF19N20C
®
N-Channel QFET MOSFET
200 V, 19 A, 170 mΩ
Features
Description
•
19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V,
D = 9.5 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
I
•
•
•
Low Gate Charge (Typ. 40.5 nC)
Low Crss (Typ. 85 pF)
100% Avalanche Tested
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FQP19N20C
FQPF19N20C
Unit
V
Drain to Source Voltage
Drain Current
200
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
19.0
12.1
76.0
19.0 *
12.1 *
76.0 *
A
ID
A
IDM
Drain Current
(Note 1)
A
VGSS
EAS
IAR
Gate to Source Voltage
30
433
19.0
13.9
5.5
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
(TC = 25oC)
- Derate above 25oC
139
43
PD
Power Dissipation
1.11
0.34
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Unit
°C/W
°C/W
FQP19N20C
FQPF19N20C
2.89
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
0.9
62.5
62.5
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
1
Package Marking and Ordering Information
Device Marking
FQP19N20C
Device
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
50 units
FQP19N20C
FQPF19N20C
FQPF19N20C
TO-220F
Tube
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
200
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature Coeffi-
I
D = 250 μA, Referenced to 25°C
0.24
V/°C
/
ΔTJ cient
IDSS
V
V
DS = 200 V, VGS = 0 V
DS = 160 V, TC = 125°C
--
--
--
--
--
--
--
--
10
μA
μA
nA
nA
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
0.17
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 9.5 A
0.14
10.8
gFS
VDS = 40 V, ID = 9.5 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
830
195
85
1080
255
110
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
150
135
115
40.5
6.0
40
310
280
240
53.0
--
ns
ns
VDD = 100 V, ID = 19.0 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 160 V, ID = 19.0 A,
Qgs
Qgd
VGS = 10 V
22.5
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
19.0
76.0
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 19.0 A
GS = 0 V, IS = 19.0 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
208
1.63
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 1.8 mH, I = 19.0 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 19.0 A, di/dt ≤ 300 A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
2
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
150oC
101
Bottom : 4.5 V
25oC
-55oC
100
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
0.6
0.4
0.2
0.0
101
VGS = 10V
100
150℃
25℃
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
20
30
40
50
60
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
VDS = 40V
VDS = 100V
gd
2500
2000
1500
1000
500
VDS = 160V
C
iss
6
C
oss
C
4
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 19.0A
0
10
0
-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※ Notes :
1. VGS = 10 V
2. ID = 9.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
2
102
101
100
10
100 μs
1 ms
10 μs
100 μs
1
10
10 ms
1 ms
10 ms
DC
DC
0
10
※ Notes :
1. TC = 25 oC
※Notes :
1. TC = 25 oC
2. TJ = 150 oC
2. T = 150 oC
J
3. Single Pulse
3. Single Pulse
-1
-1
10
10
0
1
10
2
10
10
100
101
102
V , Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP19N20C
Figure 9-2. Maximum Safe Operating Area
for FQPF19N20C
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
4
Typical Characteristics (Continued)
1 0 0
D = 0 .5
※
N o te s
1 . Z θ J C (t)
2 . D u ty F a c to r, D = t1 /t2
:
=
0 .9 0 ℃ /W M a x.
0 .2
1 0 -1
0 .1
3 . T J M
-
T C
=
P D
* Z θ J C (t)
M
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP19N20C
D = 0 .5
1 0 0
※
N o te s
1 . Z θ J C (t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .2
=
2 .8 9 ℃ /W M a x.
0 .1
3 . T J M
-
T C = P D M * Z θ J C (t)
0 .0 5
1 0 -1
0 .0 2
0 .0 1
PDM
sin g le p u lse
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF19N20C
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
5
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
7
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
8
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
9
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AccuPower™
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Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
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QS™
Quiet Series™
RapidConfigure™
™
®
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TinyBuck
®
®
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®
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®
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Saving our world, 1mW/W/kW at a time™
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®
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66
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©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
10
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相关型号:
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N 沟道,QFET® MOSFET 60V,15.7A,52mΩ 功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,15.7 A,52 mΩ,TO-220F
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