概述
规格参数
数据手册FQPF33N10 概述
功率 MOSFET，N 沟道，QFET®，100 V，18 A，52 mΩ，TO-220F 功率场效应晶体管
FQPF33N10 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.29.00.95 |
| Factory Lead Time： | 1 week | 风险等级： | 1.48 |
| 雪崩能效等级（Eas）： | 430 mJ | 外壳连接： | ISOLATED |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 100 V |
| 最大漏极电流 (Abs) (ID)： | 18 A | 最大漏极电流 (ID)： | 18 A |
| 最大漏源导通电阻： | 0.052 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 175 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 41 W |
| 最大脉冲漏极电流 (IDM)： | 72 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | NO |
| 端子面层： | Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
FQPF33N10 数据手册
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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November 2013
FQPF33N10
®
N-Channel QFET MOSFET
100 V, 18 A, 52 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V,
D = 9 A
I
•
•
•
•
Low Gate Charge (Typ. 38 nC)
Low Crss (Typ. 62 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQPF33N10
Unit
V
Drain-Source Voltage
100
18
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
12.7
72
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
25
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
430
mJ
A
18
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
4.1
mJ
V/ns
W
dv/dt
PD
6.0
41
- Derate above 25°C
0.27
-55 to +175
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
FQPF33N10
3.70
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
62.5
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQPF33N10
FQPF33N10
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
Drain-Source Breakdown Voltage
100
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.11
V/°C
/
ΔTJ
IDSS
V
DS = 100 V, VGS = 0 V
DS = 80 V, TC = 150°C
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
Zero Gate Voltage Drain Current
V
10
IGSSF
IGSSR
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
VGS =10V, ID =9A
0.040 0.052
gFS
VDS = 40 V, ID = 9 A
Forward Transconductance
--
20
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1150
320
62
1500
420
80
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
195
80
40
400
170
230
51
ns
ns
VDD = 50 V, ID = 33 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
110
38
ns
Qg
nC
nC
nC
VDS = 80 V, ID = 33 A,
Qgs
Qgd
7.5
18
--
VGS = 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
18
72
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 18 A
GS = 0 V, IS = 33 A,
dIF / dt = 100 A/μs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
80
0.22
ns
μC
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 2 mH, I = 18 A, V = 25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 33 A, di/dt ≤ 300 A/μs, V
≤ B V starting T = 25°C.
4. Essentially independent of operating temperature.
SD
DD
DSS, J
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
2
Typical Characteristics
V
2
10
2
10
Top : 15.0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
1
10
1
10
175℃
25℃
※Notes :
1. VDS = 40V
2. 250μs Pulse Test
※Notes :
1. 250μs Pulse Test
2. T = 25℃
-55℃
C
0
10
0
10
-1
10
0
10
1
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
2
10
VGS = 10V
VGS = 20V
1
10
※Notes:
1. VGS = 0V
2. 250μs Pulse Test
175℃
25℃
※Note : T = 25℃
J
0
0
20
40
60
80
100
120
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS =50V
VDS = 80V
2500
2000
1500
1000
500
0
C
iss
※Notes :
1. VGS = 0 V
2. f =1MHz
C
oss
6
4
C
rss
2
※Note : ID = 33A
0
0
5
10
15
20
25
30
35
40
-1
1
10
10
100
QG, Total Gate Charge [nC]
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
3
Typical Characteristics (continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes:
1. VGS = 0 V
2. ID= 250 μA
0.9
※Notes :
1. V = 10 V
2. IDG=S 16.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
101
100
100 μs
1 ms
10 ms
100 ms
DC
※Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
0
-1
25
50
75
100
125
150
175
10
-1
10
100
101
102
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o t e s
1 . Z θ J C(t )
2 . D u t y Fa c t o r , D =t 1 /t 2
:
0 .1
=
3 .7 ℃ /W M a x.
0 .0 5
3 . T J M
-
T C
=
P D
* Z θ J C(t )
M
1 0 - 1
0 .0 2
PDM
0 .0 1
s in g le p u ls e
1 0 - 2
t1
t2
1 0 - 5
1 0 - 4
1 0 -3
1 0 - 2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
www.fairchildsemi.com
7
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
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CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF33N10 Rev. C1
8
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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FQPF33N10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FQPF33N10L | FAIRCHILD | 100V LOGIC N-Channel MOSFET | 获取价格 |
|
| FQPF33N10L | ONSEMI | 功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，18 A，52 mΩ，TO-220F | 获取价格 |
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| FQPF34N20 | FAIRCHILD | 200V N-Channel MOSFET | 获取价格 |
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| FQPF34N20L | FAIRCHILD | 200V LOGIC N-Channel MOSFET | 获取价格 |
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| FQPF3N25 | FAIRCHILD | 250V N-Channel MOSFET | 获取价格 |
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| FQPF3N25 | ONSEMI | 功率 MOSFET，N 沟道，QFET®， 250 V，2.3 A，2.2 Ω，TO-220F | 获取价格 |
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| FQPF3N30 | FAIRCHILD | 300V N-Channel MOSFET | 获取价格 |
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| FQPF3N40 | FAIRCHILD | 400V N-Channel MOSFET | 获取价格 |
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| FQPF3N50C | FAIRCHILD | 500V N-Channel MOSFET | 获取价格 |
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| FQPF3N50C_NL | FAIRCHILD | Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | 获取价格 |
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