FQPF5P20 [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-200 V，-3.4 A，1.4 Ω，TO-220F;
| 型号： | FQPF5P20 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-200 V，-3.4 A，1.4 Ω，TO-220F 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：587K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2014
FQPF5P20
®
P-Channel QFET MOSFET
-200 V, -3.4 A, 1.4 Ω
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
-3.4 A, -200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = -10 V,
D = -1.7 A
I
•
•
•
Low Gate Charge (Typ. 10 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
S
G
D
G
G
TO-220F
LG-formed
D
S
S
TO-220F
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FQPF5P20
FQPF5P20RDTU
Symbol
Parameter
Unit
VDSS
Drain-Source Voltage
-200
-3.4
V
A
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
-2.15
-13.6
30
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
330
mJ
A
-3.4
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
3.8
mJ
V/ns
W
dv/dt
PD
-5.5
38
- Derate Above 25°C
0.3
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
-55 to +150
300
°C
Thermal Characteristics
FQPF5P20
FQPF5P20RDTU
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
3.29
62.5
°C/W
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
TO-220F
Tube
N/A
N/A
50 units
FQPF5P20
FQPF5P20
TO-220F
(LG-formed)
Tube
N/A
N/A
50 units
FQPF5P20RDTU
FQPF5P20
Elerical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
VGS = 0 V, ID = -250 μA
Drain-Source Breakdown Voltage
-200
--
--
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, Referenced to 25°C
-0.17
V/°C
IDSS
V
DS = -200 V, VGS = 0 V
DS = -160 V, TC = 125°C
--
--
--
--
--
--
--
--
-1
μA
μA
nA
nA
Zero Gate Voltage Drain Current
V
-10
IGSSF
IGSSR
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
On Characteristics
VGS(th)
VDS = VGS, ID = -250 μA
Gate Threshold Voltage
-3.0
--
--
-5.0
1.4
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.7 A
1.1
gFS
VDS = -40 V, ID = -1.7 A
Forward Transconductance
--
2.15
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
330
75
430
98
pF
pF
pF
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
12
15
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
9
28
150
35
60
13
--
ns
ns
VDD = -100 V, ID = -4.8 A,
70
12
25
10
2.8
5.2
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
VDS = -160 V, ID = -4.8 A,
Qgs
Qgd
VGS = -10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-3.4
-13.6
-5.0
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -3.4 A
GS = 0 V, IS = -4.8 A,
dIF / dt = 100 A/μs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
175
1.07
ns
μC
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 42.8 mH, I = -3.4 A, V = -50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ -4.8 A, di/dt ≤ 300 A/μs, V
≤ BV starting T = 25°C.
4. Essentially independent of operating temperature.
SD
DD
DSS, J
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
2
Typical Characteristics
101
VGS
101
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100
Bottom : -5.5 V
100
150℃
-1
10
25℃
※ Notes :
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
1. VDS = -40V
2. 250μs Pulse Test
-55℃
-2
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.4
1.8
1.2
0.6
0.0
101
VGS = - 10V
VGS = - 20V
100
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
150℃
25℃
※ Note : T = 25℃
J
-1
10
0
3
6
9
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
750
600
450
300
150
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = -40V
VDS = -100V
VDS = -160V
C
iss
6
Coss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = -4.8 A
0
-1
10
100
101
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
3
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
※ Notes :
1. VGS = -10 V
2. ID = -2.4 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
100
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
-1
10
3. Single Pulse
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .1
=
3 .2 9 ℃ /W M a x.
0 .0 5
3 . T JM
-
T C
=
P D M * Z θ JC(t)
1 0 -1
0 .0 2
PDM
0 .0 1
t1
t2
s in g le p u ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
V
GS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
V
DUT
GS
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQPF5P20 Rev. C1
6
10.36
9.96
2.66
2.42
B
B
A
3.28
3.08
7.00
0.70
3.40
3.20
6.88
6.48
1 X 45°
16.07
15.67
B
R1.00
2.96
2.56
1
3
1.47
1.24
8.50
7.50
B
R1.00
0.90
0.70
2.14
0.60
0.45
4.50
3.50
B
M
0.50
A
B
4.80
4.20
2.54
2.54
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220N03REV2
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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