FQPF9N25CT [ONSEMI]
功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-220F;
| 型号： | FQPF9N25CT |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-220F |
| 文件： | 总10页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
FQPF9N25C / FQPF9N25CT
®
N-Channel QFET MOSFET
250 V, 8.8 A, 430 mΩ
Features
Description
•
8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V,
D = 4.4 A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
I
•
•
•
Low Gate Charge (Typ. 26.5 nC)
Low Crss (Typ. 45.5 pF)
100% Avalanche Tested
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FQPF9N25C / FQPF9N25CT
Unit
V
Drain to Source Voltage
Drain Current
250
8.8 *
5.6 *
35.2 *
30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
A
A
ID
A
IDM
Drain Current
(Note 1)
V
VGSS
EAS
IAR
Gate to Source Voltage
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
285
8.8
mJ
V/ns
W
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
7.4
5.5
(TC = 25oC)
- Derate Above 25oC
38
PD
Power Dissipation
W/°C
°C
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Unit
FQPF9N25C / FQPF9N25CT
3.29
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
°C/W
62.5
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
1
Package Marking and Ordering Information
Device Marking
FQPF9N25C
Device
Package
TO-220F
TO-220F
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
50 units
FQPF9N25C
FQPF9N25CT
FQPF9N25CT
Tube
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
Drain-Source Breakdown Voltage
250
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature Coeffi-
I
0.30
V/°C
/
ΔTJ cient
V
V
DS = 250 V, VGS = 0 V
DS = 200 V, TC = 125°C
--
--
--
--
--
--
--
--
10
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
0.43
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 4.4 A
0.35
7.0
VDS = 40 V, ID = 4.4 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
545
115
710
150
60
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
45.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
85
40
180
190
140
35
ns
ns
VDD = 125 V, ID = 8.8 A,
VGS = 10 V , RG = 25 Ω
90
ns
(Note 4)
(Note 4)
65
ns
Qg
26.5
3.5
13.5
nC
nC
nC
V
DS = 200 V, ID = 8.8 A,
Qgs
Qgd
--
VGS = 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
8.8
35.2
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 8.8 A
GS = 0 V, IS = 8.8 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
218
1.58
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 5.9 mH, I = 8.8 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 8.8 A, di/dt ≤ 300 A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
2
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
101
150oC
Bottom : 4.5 V
25oC
-55oC
100
100
※ Notes :
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
1. VDS = 40V
2. 250μs Pulse Test
-1
-1
10
10
-1
100
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.25
1.00
0.75
0.50
0.25
0.00
101
VGS = 10V
100
150℃
25℃
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1500
1000
500
0
12
10
8
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 50V
VDS = 125V
VDS = 200V
C
iss
6
C
oss
4
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 8.8A
0
-1
10
100
101
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
3
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※ Notes :
1. VGS = 10 V
2. ID = 4.4 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
102
101
100
10
8
Operation in This Area
is Limited by R DS(on)
10 μs
100 μs
6
1 ms
10 ms
4
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
2
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
1 0 0
※
N o te s
1 . Z θ J C (t)
2 . D u ty F a c to r, D = t1/t2
:
0 .2
=
3 .2 9 ℃ /W M a x.
0 .1
3 . T JM
-
T C
=
P D
* Z θ J C (t)
M
0 .0 5
0 .0 2
1 0 -1
0 .0 1
PDM
sin g le p u lse
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
www.fairchildsemi.com
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
7
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I66
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©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
8
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