FQT1N80TF-WS [ONSEMI]
功率 MOSFET,N 沟道,QFET®,800 V,0.2 A,20 Ω,SOT-223;型号: | FQT1N80TF-WS |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,QFET®,800 V,0.2 A,20 Ω,SOT-223 开关 光电二极管 晶体管 |
文件: | 总9页 (文件大小:1065K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQT1N80TF-WS
N-Channel QFET® MOSFET
800V, 0.2 A, 20 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-
state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
•
0.2 A, 800 V, RDS(on)=15.5 Ω(Typ.)@VGS=10 V, ID=0.1 A
Low Gate Charge (Typ. 5.5 nC)
Low Crss (Typ. 2.7 pF)
100% Avalanche Tested
RoHS Compliant
•
•
•
•
D
D
S
G
G
SOT-223
S
o
MOSFET Maximum Ratings T =ꢀ25 Cꢀunlessꢀotherwiseꢀnoted*
Cꢀ
Symbol
Parameter
FQT1N80TF-WS
Unit
V
V
V
DrainꢀtoꢀSourceꢀVoltage
GateꢀtoꢀSourceꢀVoltage
800
±30
DSS
GSS
V
o
ꢁContinuousꢀ(T ꢀ=ꢀ25 C)
0.2
C
I
I
Drain
Current
ꢀ
A
D
o
ꢁContinuousꢀ(T ꢀ=ꢀ100 C)
0.12
0.8
C
DrainꢀCurrentꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢁꢀPulsedꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ1)
SingleꢀPulsedꢀAvalancheꢀEnergyꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ2)
AvalancheꢀCurrentꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ1)
RepetitiveꢀAvalancheꢀEnergyꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ1)
A
mJ
A
DM
E
90
AS
I
0.2
AR
E
0.2
mJ
V/ns
W
AR
dv/dt
PeakꢀDiodeꢀRecoveryꢀdv/dtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ3)
4.0
o
(T ꢀ=ꢀ25 C)
2.1
C
P
PowerꢀDissipation
D
o
o
ꢁꢀDerateꢀaboveꢀ25 C
0.02
ꢁ55ꢀtoꢀ+150
W/ C
o
T ,ꢀT
OperatingꢀandꢀStorageꢀTemperatureꢀRange
C
J
STG
MaximumꢀLeadꢀTemperatureꢀforꢀSolderingꢀPurpose,
1/8”ꢀfromꢀCaseꢀforꢀ5ꢀSeconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
ThermalꢀResistance,ꢀJunctionꢀtoꢀAmbient*ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Unit
Min.
Max.
60
o
R
ꢁ
C/W
θJA
*ꢀWhenꢀmountedꢀonꢀtheꢀminimumꢀpadꢀsizeꢀrecommendedꢀ(PCBꢀMount)
©2013 ON Semiconductor Components Industries, LLC
August-2017.Rev3
Pronduct Order Number:
FQT1N80TF-WS /D
o
Package Marking and Ordering Information T =ꢀ25 Cꢀunlessꢀotherwiseꢀnoted
Cꢀ
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQT1N80
FQT1N80TF-WS
SOTꢁ223
330mm
12mm
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
o
BV
DrainꢀtoꢀSourceꢀBreakdownꢀVoltage
I ꢀ=ꢀ250ꢀA,ꢀV ꢀ=ꢀ0V,ꢀT ꢀ=ꢀ25 C
800
ꢁ
ꢁ
ꢁ
ꢁ
V
DSS
D
GS
J
ꢁBV
/ꢀꢀꢀꢀꢀꢁT
BreakdownꢀVoltageꢀTemperatureꢀ
Coefficient
DSS
o
o
I ꢀ=ꢀ250ꢀA,ꢀReferencedꢀtoꢀ25 C
0.8
V/ C
D
J
V
ꢀ=ꢀ800V,ꢀV =ꢀ0V
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
25
DS
DS
GS
GSꢀ
I
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
GateꢀtoꢀBodyꢀLeakageꢀCurrent
ꢀA
DSS
o
V
V
ꢀ=ꢀ640V,ꢀT =ꢀ125 C
250
Cꢀ
I
ꢀ=ꢀ±30V,ꢀV =ꢀ0V
±100
nA
GSS
DSꢀ
On Characteristics
V
GateꢀThresholdꢀVoltage
V
V
V
ꢀ=ꢀV ,ꢀI ꢀ=ꢀ250ꢀA
3.0
ꢁ
ꢁ
5.0
20
ꢁ
V
ꢂ
S
GS(th)
GS
GS
DS
DS
D
R
StaticꢀDrainꢀtoꢀSourceꢀOnꢀResistance
ForwardꢀTransconductance
ꢀ=ꢀ10V,ꢀI ꢀ=ꢀ0.1Aꢀꢀꢀꢀ
15.5
0.75
DS(on)
FS
D
g
ꢀ=ꢀ40V,ꢀI ꢀ=ꢀ0.1Aꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ4)
ꢁ
D
Dynamic Characteristics
C
C
C
InputꢀCapacitance
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
150
20
195
30
5.0
7.2
ꢁ
pF
pF
pF
nC
nC
nC
iss
V
ꢀ=ꢀ25V,ꢀV ꢀ=ꢀ0V
GS
DS
OutputꢀCapacitance
oss
rss
fꢀ=ꢀ1MHz
ReverseꢀTransferꢀCapacitance
TotalꢀGateꢀChargeꢀatꢀ10Vꢀ
GateꢀtoꢀSourceꢀGateꢀCharge
GateꢀtoꢀDrainꢀ“Miller”ꢀCharge
2.7
5.5
1.1
3.3
Q
Q
Q
g
V
V
ꢀ=ꢀ640V,ꢀI ꢀ=ꢀ1A
DS
GS
D
gs
gd
ꢀ=ꢀ10Vꢀ
ꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ4,ꢀ5)
Switching Characteristicsꢀ
t
t
t
t
TurnꢁOnꢀDelayꢀTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayꢀTime
TurnꢁOffꢀFallꢀTime
ꢁ
ꢁ
ꢁ
ꢁ
10
25
15
25
30
60
ꢀ40
60
ns
ns
ns
ns
d(on)
V
ꢀ=ꢀ400V,ꢀI ꢀ=ꢀ1A
D
DD
r
R ꢀ=ꢀ25ꢂꢀ
G
d(off)
f
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ4,ꢀ5)
Drain-Source Diode Characteristics
I
I
MaximumꢀContinuousꢀDrainꢀtoꢀSourceꢀDiodeꢀForwardꢀCurrent
MaximumꢀPulsedꢀDrainꢀtoꢀSourceꢀDiodeꢀForwardꢀCurrent
ꢁ
ꢁ
ꢁ
0.2
0.8
1.4
ꢁ
A
A
S
ꢁ
SM
V
t
DrainꢀtoꢀSourceꢀDiodeꢀForwardꢀVoltage
ReverseꢀRecoveryꢀTime
V
=ꢀ0V,ꢀI =ꢀ0.2A
ꢁꢀꢀ
ꢁ
ꢁ
V
SD
GSꢀ
SDꢀ
300
0.6
ns
ꢃꢀC
V
ꢀ=ꢀ0V,ꢀI =ꢀ1A
rr
GS
SDꢀ
dI /dtꢀ=ꢀ100A/ꢀsꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Noteꢀ4)
Q
ReverseꢀRecoveryꢀCharge
ꢁ
ꢁ
F
rr
Notes:
1.ꢀRepetitiveꢀRating:ꢀPulseꢀwidthꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperature
2.ꢀLꢀ=ꢀ170mH,ꢀI ꢀ=ꢀ1A,ꢀV ꢀ=ꢀ50V,ꢀR ꢀ=ꢀ25ꢂ,ꢀStartingꢀT ꢀ=ꢀ25°C
AS
DD
G
J
3.ꢀI ꢀ≤ꢀ1A,ꢀdi/dtꢀ≤ꢀ200A/ꢀs,ꢀV ꢀ≤ꢀBV
,ꢀStartingꢀT ꢀ=ꢀ25°C
SD
DD
DSS
J
4.ꢀPulseꢀTest:ꢀPulseꢀwidthꢀ≤ꢀ300ꢀs,ꢀDutyꢀCycleꢀ≤ꢀ2%
5.ꢀEssentiallyꢀIndependentꢀofꢀOperatingꢀTemperatureꢀTypicalꢀCharacteristics
www.onsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀV
GS
Topꢀ:ꢀꢀꢀꢀꢀꢀꢀ15.0ꢀV
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ10.0ꢀV
0
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ8.0ꢀV
10
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ7.0ꢀV
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ6.5ꢀV
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ6.0ꢀV
Bottomꢀ:ꢀꢀꢀꢀ5.5ꢀV
0
10
o
ꢁ1
10
150C
o
25C
o
ꢁ55C
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀ250ꢂsꢀPulseꢀTest
ꢀꢀꢀ2.ꢀTCꢀ=ꢀ25℃
ꢁ2
10
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVDSꢀ=ꢀ50V
ꢀꢀꢀ2.ꢀ250ꢂsꢀPulseꢀTest
ꢁ1
10
ꢁ1
10
0
10
1
10
2
4
6
8
10
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
VGS,ꢀGateꢁSourceꢀVoltageꢀ[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
40
V ꢀ=ꢀ10V
GS
0
10
30
V ꢀ=ꢀ20V
GS
20
10
150℃
25℃
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0V
※ꢀNoteꢀ:ꢀTꢀ=ꢀ25℃
ꢀꢀꢀ2.ꢀ250ꢂsꢀPulseꢀTest
J
ꢁ1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.6
0.8
1.0
1.2
ID,ꢀDrainꢀCurrentꢀ[A]
V ,ꢀSourceꢁDrainꢀvoltageꢀ[V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
250
C ꢀ=ꢀC ꢀ+ꢀC ꢀ(C ꢀ=ꢀshorted)
iss
gs
gd
ds
C
ossꢀ=ꢀC ꢀ+ꢀC
ds gd
C
rssꢀ=ꢀC
VDSꢀ=ꢀ160V
VDSꢀ=ꢀ400V
gd
10
8
200
150
100
50
C
iss
VDSꢀ=ꢀ640V
6
C
oss
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
4
C
rss
2
※ꢀNoteꢀ:ꢀI ꢀ=ꢀ1.0ꢀA
D
0
10
0
ꢁ1
0
10
1
10
0
1
2
3
4
5
6
V ,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Q ,ꢀTotalꢀGateꢀChargeꢀ[nC]
G
DS
www.onsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
3.0
1.2
2.5
2.0
1.5
1.0
1.1
1.0
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
0.9
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
0.5
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ250ꢀꢂA
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ0.1ꢀA
0.8
ꢁ100
0.0
ꢁ100
ꢁ50
0
50
100
150
200
ꢁ50
0
50
100
150
200
T,ꢀJunctionꢀTemperatureꢀ[oC]
T,ꢀJunctionꢀTemperatureꢀ[oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
0.20
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
100
100ꢀꢀs
1ꢀms
10ꢀms
ꢁ1
10
100ꢀms
1ꢀs
DC
ꢁ2
10
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀTCꢀ=ꢀ25ꢀoC
ꢀꢀꢀ2.ꢀTꢀ=ꢀ150ꢀoC
J
ꢀꢀꢀ3.ꢀSingleꢀPulse
ꢁ3
10
10
0
1
10
2
10
3
10
25
50
75
100
125
150
V ,ꢀDrainꢁSourceꢀVoltageꢀ[V]
TC,ꢀCaseꢀTemperatureꢀ[°C]
DS
Figure 11. Transient Thermal Response Curve
ꢀ
1 0 2
1 0 1
1 0 0
1 0 ꢁ1
D = 0 .5
※
ꢀN o te s ꢀ:
0 .2
0 .1
ꢀꢀꢀ1 .ꢀZ θ (t)ꢀ= ꢀ6 0 ꢀ℃ /W ꢀM a x .
J C
ꢀꢀꢀ2 .ꢀD u tyꢀF a c to r,ꢀD = t1 /t2
ꢀꢀꢀ3 .ꢀT J M ꢀꢁꢀT C ꢀ= ꢀP D M ꢀ*ꢀZ θ (t)
J C
0 .0 5
PDM
0 .0 2
0 .0 1
t1
t2
s in g le ꢀp u ls e
1 0 ꢁ5
1 0 ꢁ4
1 0 ꢁ3
1 0 ꢁ2
1 0 ꢁ1
1 0 0
1 0 1
1 0 2
1 0 3
t1 ,ꢀS q u a re ꢀW a v e ꢀP u ls e ꢀD u ra tio n ꢀ[s e c ]
www.onsemi.com
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
SameꢀTypeꢀ
asꢀDUT
VDD
VGS
• dv/dt controlledꢀbyꢀꢀRG
• ISD controlledꢀbyꢀpulseꢀperiodꢀ
GateꢀPulseꢀWidth
ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁ
VGS
Dꢀ=
GateꢀPulseꢀPeriod
10V
( Driver )
IFM ,ꢀBodyꢀDiodeꢀForwardꢀCurrent
I SD
di/dt
( DUT )
IRM
BodyꢀDiodeꢀReverseꢀCurrent
BodyꢀDiodeꢀRecovery dv/dt
VSD
VDS
( DUT )
VDD
BodyꢀDiode
ForwardꢀVoltageꢀDrop
www.onsemi.com
6
Mechanical Dimensions
SOTꢁ223
3.00 ±0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
0.70 ±0.10
+0.10
–0.05
(0.95)
(0.95)
0.25
4.60 ±0.25
6.50 ±0.20
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号:
FQT26N03L
Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
FAIRCHILD
FQT26N03LD84Z
Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT26N03LL99Z
Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT2P25L99Z
Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT2P25S62Z
Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT2P25TF
Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT3N25
Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
FAIRCHILD
FQT3N25L99Z
Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FQT3N25S62Z
Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明