FQT3P20TF [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-200 V，-0.67 A，2.7 Ω，SOT-223;
| 型号： | FQT3P20TF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-200 V，-0.67 A，2.7 Ω，SOT-223 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQT3P20
P-Channel QFET® MOSFET
-200 V, -0.67 A, 2.7 Ω
Features
•
-0.67 A, -200 V, R
ID = 0.335 A
= 2.7 Ω (Max.) @V = 10 V,
DS(on) GS
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
•
•
Low Gate Charge ( Typ. 6.0 nC)
Low Crss ( Typ. 7.5 pF)
D
D
S
D
SOT-223
G
S
G
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQT3P20TF
-200
Unit
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
-0.67
-0.53
-2.7
A
D
C
- Continuous (T = 70°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
150
mJ
A
AS
-0.67
0.25
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
AR
dv/dt
-5.5
P
Power Dissipation (T = 25°C)
2.5
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.02
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Unit
FQT3P20TF
R
Thermal Resistance, Junction-to-Ambient
50
°C/W
θJA
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Publication Order Number:
FQT3P20/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQT3P20
FQT3P20TF
SOT-223
13"
12 mm
2500 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-200
--
--
--
--
V
DSS
∆B
/
Breakdown Voltage Temperature
Coefficient
VDSS
I
= -250 µA, Referenced to 25°C
-0.18
V/°C
D
∆T
J
I
V
V
V
V
= -200 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -160 V, T = 125°C
-10
DS
GS
GS
C
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
I
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-3.0
--
--
-5.0
2.7
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -0.335 A
2.06
0.7
D
g
= -40 V, I = -0.335 A
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
190
45
250
60
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
7.5
10
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
8.5
35
25
80
35
60
8.0
--
ns
ns
d(on)
V
= -100 V, I = -2.8 A,
DD
D
r
R
= 25 Ω
G
12
ns
d(off)
f
(Note 4)
(Note 4)
25
ns
Q
Q
Q
6.0
1.7
2.9
nC
nC
nC
g
V
V
= -160 V, I = -2.8 A,
DS
D
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-0.67
-2.7
-5.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
V
V
= 0 V, I = -0.67 A
S
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
trr
= 0 V, I = -2.8 A,
100
0.34
ns
µC
GS
S
dI / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
F
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 500mH, I = -0.67A, V = -50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -2.8A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
Essentially independent of operating temperature
4.
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2
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100
100
Bottom: -5.5 V
℃
150
-1
10
℃
25
℃
-55
※
Notes :
※
Notes :
μ
1. 250 s Pulse Test
1. V = -40V
DS μ
℃
2. TC = 25
2. 250 s Pulse Test
10-1
-1
10
100
101
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
8
VGS = - 10V
100
6
VGS = - 20V
4
℃
150
℃
25
2
※
Notes :
1. V = 0V
GSμ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
0
10
0
2
4
6
8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
400
300
200
100
0
VDS = -40V
VDS = -100V
VDS = -160V
C
iss
Coss
6
※
Notes :
4
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = -2.8 A
6
0
-1
10
100
101
0
1
2
3
4
7
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
0.9
0.8
1. VGS = 0 V
※
Notes :
1. VGS = -10 V
2. ID = -0.335 A
2. ID = -250 μ A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
0.8
0.6
0.4
0.2
0.0
101
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
-1
10
-2
10
※
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-3
10
10
101
102
-1
0
10
25
50
75
100
125
150
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
※
N otes
1. Z θJA(t)
:
1 0 1
0 .2
=
5 0
℃
/W M a x.
2. Duty F ac to r, D = t1 /t2
3. T J M
-
T A
=
P D
* ZθJA(t)
M
0 .1
0 .05
0 .02
1 0 0
PDM
0 .01
t1
sin gle pu lse
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
1 0 2
1 0 3
t1 , S qu a re W a ve P ulse D u ration [se c]
Figure 11. Transient Thermal Response Curve
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4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
V
GS
90%
VDS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
V
DUT
GS
IAS
t p
BVDSS
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
VDD
(N-Channel)
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
I SD
IRM
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
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6
Mechanical Dimensions
SOT-223 4L
Figure 16. Molded Package, SOT-223, 4 Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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