FQT7N10LTF [ONSEMI]
功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，1.7 A，350 mΩ，SOT-223;
| 型号： | FQT7N10LTF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，1.7 A，350 mΩ，SOT-223 PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：881K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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July 2015
FQT7N10L
N-Channel QFET® MOSFET
100 V, 1.7 A, 350 mΩ
Description
Features
1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
•
•
•
•
Low Gate Charge (Typ. 5.8 nC)
Low Crss (Typ. 10 pF)
100% Avalanche Tested
D
!
D
"
! "
"
!
G
S
"
G
!
S
SOT-223
Absolute Maximum Ratings
T = 25°C unless otherwise noted
A
Symbol
Parameter
FQT7N10L
100
Unit
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
1.7
A
A
D
- Continuous (T = 70°C)
A
1.36
6.8
A
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 20
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
50
mJ
A
AS
1.7
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
0.2
mJ
V/ns
W
AR
dv/dt
6.0
P
Power Dissipation (T = 25°C)
2.0
D
A
- Derate above 25°C
Operating and Storage Temperature Range
0.016
-55 to +150
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
Max
Unit
R
Thermal Resistance, Junction-to-Ambient *
--
62.5
°C/W
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
Electrical Characteristics
T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
100
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.1
V/°C
D
/ ∆T
J
I
V
V
V
V
= 100 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 80 V, T = 125°C
10
DS
GS
GS
C
I
I
= 20 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -20 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
1.0
--
--
2.0
V
Ω
S
GS(th)
DS
GS
D
= 10 V, I = 0.85 A
R
Static Drain-Source
On-Resistance
0.275
0.300
0.35
0.38
GS
GS
D
DS(on)
= 5 V, I = 0.85 A
D
g
= 30 V, I = 0.85 A
Forward Transconductance
--
2.75
--
(Note 4)
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
220
55
290
72
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
12
15
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
9
30
210
45
110
6.0
--
ns
ns
d(on)
V
= 50 V, I = 7.3 A,
DD
D
100
17
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
50
ns
Q
Q
Q
4.6
1.0
2.6
nC
nC
nC
g
V
V
= 80 V, I = 7.3 A,
DS
D
= 5 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.7
6.8
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 1.7 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 7.3 A,
70
140
ns
nC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 26mH, I = 1.7A, V = 25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 7.3A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
Typical Characteristics
V
Top :
10.0GVS
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom: 3.0 V
℃
150
100
100
℃
25
℃
-55
※
Notes :
※
Notes :
μ
1. V = 30V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TA = 25℃
DS μ
-1
-1
10
10
-1
0
10
1
10
0
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
VGS = 5V
100
VGS = 10V
℃
150
℃
25
※
Notes :
1. V = 0V
GSμ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 50V
VDS = 80V
※
Notes :
C
1. VGS = 0 V
2. f = 1 MHz
iss
6
Coss
4
C
rss
2
※
Note : ID = 7.3 A
7
0
10-1
100
101
0
1
2
3
4
5
6
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
0.9
1. VGS = 0 V
※
Notes :
2. ID = 250 μA
1. VGS = 10 V
2. ID = 0.85 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.6
1.2
0.8
0.4
0.0
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100 ms
100
DC
-1
10
※
Notes :
1.TA = 25 o
C
2. T = 150 oC
J
3. Single Pulse
-2
10
10
100
101
102
-1
25
50
75
100
125
150
℃
TA, Ambient Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Ambient Temperature
1 0 2
D = 0 .5
※
N otes
1 . Zθ JA(t)
:
=
0 .2
1 0 1
62.5 oC/W Max.
t1 t2
Zθ JA(t)
2. Duty Factor,
3. TJM TC PDM *
D
=
/
0 .1
-
=
0 .05
0 .02
1 0 0
PDM
0 .01
t1
sin gle pu lse
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
1 0 2
1 0 3
t1 , S qu a re W a ve P ulse D u ration [se c]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
5V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. 1.3
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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