FSA636UCX [ONSEMI]
Ultra Small, Low Power, 4-Data Lane, 2:1 Switch for MIPI, SuperSpeed USB, PCIe and DisplayPort;型号: | FSA636UCX |
厂家: | ONSEMI |
描述: | Ultra Small, Low Power, 4-Data Lane, 2:1 Switch for MIPI, SuperSpeed USB, PCIe and DisplayPort PC |
文件: | 总8页 (文件大小:827K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Ultra Small, Low Power,
4 Data Lane, 2:1 Switch
for MIPI, SuperSpeed USB,
PCIe and DisplayPort
Product Preview
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FSA636
Description
The FSA636 may be configured as a four data lane MIPI D−PHY,
V2.1 switch or a three data lane MIPI C−PHY, V1.2 switch. This
single pole, double throw (SPDT) switch is optimized for switching
between both high speed and low power MIPI sources. The FSA636 is
designed for the MIPI specification and allows connection to a CSI or
DSI module. It may also be used for any high speed switching
application with amplitudes of 2 V or less and is capable of a total data
throughput of up to 23.9 Gbps.
WLCSP36 2.06x2.06x0.432
CASE 567XU
MARKING DIAGRAMS
Features
VRKK
XYZ
• Switch Type: SPDT (10x)
• Signal Type:
♦ MIPI D−PHY V2.1
♦ MIPI C−PHY V1.2
♦ SuperSpeed USB
♦ PCIe 2.0
VR
KK
X
Y
Z
= Specific Device Code
= Assembly Lot
= Year
= Work Week
= Assembly Location
♦ DisplayPort HBR
• Input Signal: 0 V to 2 V
• V : 1.5 to 5.0 V
CC
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
• R : 6 W Typical HS/LP MIPI
ON
• DR : 0.1 W Typical
ON
• R
: 0.9 W Typical
• I : 1.0 mA Maximum
ON_FLAT
CCZ
• I : 30 mA Maximum
CC
• O : −24 dB Typical
IRR
• Bandwidth: 4 GHz Typical
• Xtalk: −30 dB Typical
• C : 1.5 pF Typical
ON
• Skew: 6 ps Typical
Applications
• Cellular Phones, Smart Phones
• Cameras
• Tablets
• Laptops
• Displays
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2020 − Rev. P0
NCV8730/D
FSA636
PIN DESCRIPTIONS
Figure 1. Analog Symbol
Figure 2. Top Through View
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2
FSA636
BALL−TO−PIN MAPPINGS
Ball
A1
A2
A3
A4
Pin Name
Ball
C1
C2
C3
C4
Pin Name
Ball
E1
E2
E3
E4
Pin Name
D7A
GND
GND
/OE
D3A
D4A
D3
D8A
D7
SEL
D4
D8
A5
A6
B1
B2
B3
B4
B5
B6
C5
C6
D1
D2
D3
D4
D5
D6
D3B
D4B
D5A
D6A
D5
E5
E6
F1
F2
F3
F4
F5
F6
D7B
D8B
D9A
D10A
D9
VCC
GND
D1A
D2A
D1
D2
D6
D10
D1B
D2B
D5B
D6B
D9B
D10B
1.5 V – 5.0 V DC
FSA 636
CLKP
CLKN
1P
/OE
VCC
AP
D1A
D1B
D2A
D2B
D3A
D3B
D4A
D4B
D1
D2
D3
D4
CLKP
1N
2P
CLKN
1P
2N
3P
3N
4P
1N
4N
D5A
D5B
D6A
D6B
D7A
D7B
D8A
D8B
D9A
D9B
D10A
D10B
D5
D6
CLKP
CLKN
1P
2P
2N
1N
D7
2P
3P
2N
D8
3P
3N
3N
D9
4P
4P
4N
D10
SEL
4N
GND
Figure 3. Suggested Configuration for 4 Lane D−PHY
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3
FSA636
1.5V – 5.0V DC
FSA 636
/OE
VCC
AP
D1A
D1B
D2A
1A
1B
1C
2A
2B
2C
3A
3B
3C
D1
D2
D3
D4
1A
1B
1C
D2B
D3A
D3B
D4A
D4B
2A
2B
2C
3A
3B
3C
D5A
D5B
D6A
D5
D6
1A
1B
1C
2A
2B
2C
3A
3B
3C
D6B
D7A
D7B
D7
D8A
D8B
D9A
D8
D9
D9B
D10A
D10B
D10
SEL
GND
Figure 4. Suggested Configuration for 3 Lane C−PHY
TRUTH TABLE
SEL
LOW
HIGH
X
/OE
Function
LOW
LOW
HIGH
Dn = DnA
Dn = DnB
All Ports High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
−0.5
−0.5
−0.3
−50
Max
6.0
Unit
V
Supply Voltage
V
CC
DC Input Voltage (/OE, SEL) (Note 1)
DC Switch I/O Voltage (Note 1, 2)
DC Input Diode Current
V
V
V
CC
CNTRL
V
V
SW
2.1
mA
mA
°C
kV
I
IK
DC Output Current
25
I
OUT
Storage Temperature
−65
2.0
0.5
+150
T
STG
ESD
Human Body Model, JEDEC: JESD22−A114
Charged Device Model, JEDEC: JESD22−C101
All Pins
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed.
2. VSW refers to analog data switch paths.
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4
FSA636
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.5
0
Max
Unit
V
Supply Voltage
5.0
VCC
Control Input Voltage (SEL, /OE) (Note 3)
Switch I/O Voltage (Dn, DAn, DBn)
V
VCNTRL
VSW
VCC
0.425
2.0
HS Mode
LP Mode
0
V
V
−0.05
−40
_C
TA
Operating Temperature
+85
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. The control inputs must be held HIGH or LOW; they must not float.
ELECTRICAL SPECIFICATION TABLE Typical values are at TA = 25°C, VCC = 3.3 V unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DC ELECTRICAL PARAMETERS
VIK
VIH
VIL
IIN
Clamp Diode Voltage (/OE, SEL)
Input Voltage High (/OE, SEL)
Input Voltage Low (/OE, SEL)
IIN = −18 mA, VCC = 1.5 V
VCC = 1.5 V to 5.0 V
VCC = 1.5 V to 5.0 V
VCNTRL = 0 to VCC
−1.2
−0.6
V
V
1.3
0.5
0.5
V
Control Input Leakage
(SEL, /OE)
−0.5
−0.5
−0.5
mA
INO(OFF),
INC(OFF)
Off Leakage Current of Port
Dn, DnA, DnB
VSW = 0.0 ⇐ DATA ⇐ 2.0 V, VCC = 5 V
VSW = 0.0 ⇐ DATA ⇐ 2.0 V, VCC = 5 V
VSW = 0 V or 2.0 V; VCC = 0 V
0.5
0.5
mA
mA
IA(ON)
On Leakage Current of
Common Ports (Dn)
IOFF
IOZ
Power−Off Leakage Current
Off−State Leakage
−0.5
−0.5
0.5
0.5
mA
mA
VSW = 0.0 ⇐ DATA ⇐ 2.0 V, /OE = High,
VCC = 5 V
RON_MIPI_HS
RON_MIPI_LP
DRON_MIPI_HS
DRON_MIPI_LP
Switch On Resistance for HS MIPI ION = −8 mA, /OE = 0 V,
Applications SEL = VCC or 0 V, DnA or DnB = 0.2 V,
VCC = 1.5 V to 5.0 V
6
9
W
W
W
W
W
W
Switch On Resistance for LP MIPI ION = −8 mA, /OE = 0 V,
Applications SEL = VCC or 0 V, DnA or DnB = 1.2 V,
VCC = 1.5 V to 5.0 V
6
9
On Resistance Matching Between ION = −8 mA, /OE = 0 V,
0.1
0.1
0.9
0.9
0.25
0.25
HS MIPI Channels
(Note 4)
SEL = VCC or 0 V, DnA or DnB = 0.2 V,
VCC = 1.5 V to 5.0 V
On Resistance Matching Between ION = −8 mA, /OE = 0 V,
LP MIPI Channels (Note 4)
SEL = VCC or 0 V, DnA or DnB = 1.2 V,
VCC = 1.5 V to 5.0 V
RON_FLAT_MIPI_HS On Resistance Flatness for HS
MIPI Signals (Note 4)
ION = −8 mA, /OE = 0 V,
SEL = VCC or 0 V, DnA or DnB = 0 V to
0.3 V, VCC = 1.5 V to 5.0 V
RON_FLAT_MIPI_LP On Resistance Flatness for LP
MIPI Signals (Note 4)
ION = −8 mA, /OE = 0 V,
SEL = VCC or 0 V, DnA or DnB = 0V to
1.2 V, VCC = 1.5 V to 5.0 V
ICCZ
ICC
Quiescent Hi−Z Supply Current
VIN = 0 V or VCC, VSEL = 0 V or VCC,
IOUT = 0 A, VCC = 5.0 V, /OE = 5.0 V
1
mA
mA
Quiescent Supply Current
VIN = 0 or VCC, IOUT= 0 A, VCC = 5.0 V,
/OE = 0 V
30
ICCT
Increase in ICC Current Per
Control Voltage and VCC
VSEL = 1.5 V, /OE = 5.0 V, VCC = 5.0 V
1
4
mA
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5
FSA636
ELECTRICAL SPECIFICATION TABLE Typical values are at TA = 25°C, VCC = 3.3 V unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
AC ELECTRICAL PARAMETERS
tINIT
Initialization Time VCC to Output
(Note 4)
RL = 50 W, CL = 0 pF, VSW = 0.6 V
RL = 50 W, CL = 0 pF, VSW = 0.6 V
RL = 50 W, CL =0 pF, VSW = 0.6 V
60
60
150
150
ms
ms
ns
ns
tEN
Enable Turn−On Time,
/OE to Output
tDIS
tON
Disable Turn−Off Time,
/OE to Output
25
250
Turn−On Time, SEL to Output
Turn−Off Time SEL to Output
RL = 50 W, CL = 0 pF, VSW = 0.6 V,
SEL H to L, SEL L to H
350
1100
tOFF
tBBM
RL = 50 W, CL = 0 pF, VSW = 0.6 V,
SEL H to L, SEL L to H
125
150
1100
ns
ns
Break−Before−Make Time (Note 4) RL = 50 W, CL = 0 pF, VSW = 0.6 V,
50%DnA/B to 50%DnB/A
tPD
Propagation Delay (Note 4)
Off Isolation for MIPI (Note 4)
RL = 50 W, CL = 0 pF
TBD
ps
OIRR
RL = 50 W, f = 2250 MHz, /OE = VCC,
−24
dB
VSW = 200 mVpp
XTALK
Crosstalk for MIPI (Note 4)
RL = 50 W, f = 2250 MHz,
VSW = 200 mVpp, SEL = H & L
−30
dB
BW
Bandwidth at −3dB (Note 4)
RL = 50 W, CL = 0 pF, VSW = 200 mVpp
4.0
−0.7
6
GHz
dB
IL
Insertion Loss at 750 MHz (Note 4) RL = 50 W, CL = 0 pF, VSW = 200 mVpp
tSK(O)
Channel−to−Channel
Single−Ended Skew (Note 4)
RL = 50 W, CL = 0 pF, VSW = 0.3 V
ps
tSK(P)
Skew of Opposite Transitions of
the Same Output (Note 4)
RL = 50 W, CL = 0 pF, VSW = 0.3 V
6
ps
CAPACITANCE
CIN
Control Pin Input Capacitance
(Note 5)
VCC = 0 V, f = 1 MHz
2.1
pF
CON
On Capacitance (Note 5)
Off Capacitance (Note 5)
VCC = 3.3 V, /OE = 0 V, f = 2250 MHz
VCC and /OE = 3.3 V, f = 2250 MHz
1.5
0.9
pF
pF
COFF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES: Guarantee Levels:
4. Guaranteed by Design. Characterized on the ATE or Bench.
5. Guaranteed by Design and Characterization, not Production Tested
The table below pertains to the Packaging information on
the following page
ORDERING INFORMATION
Part Number
Operating Temperature Range
Package
Top Mark
−40 to +85_C
FSA636UCX
36−Ball WLCSP, Non−JEDEC
2.06 x 2.06 mm, 0.35 mm Pitch
VR
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6
FSA636
PACKAGE DIMENSIONS
WLCSP36 2.06x2.06x0.432
CASE 567XU
ISSUE O
DATE 26 APR 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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