FSB50450A [ONSEMI]
智能功率模块，500V，4A;
| 型号： | FSB50450A |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块，500V，4A 电动机控制 光电二极管 |
| 文件： | 总14页 (文件大小：937K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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8 2016
FSB50450A / FSB50450AS / FSB50450AT
Motion SPM® 5 系列
产品特性
相关资料
• 通过UL 第E209204 号认证(UL1557)
• RD-FSB50450A - Motion SPM 5 系列参考设计版本2
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• 500 V RDS(on) = 2.4 W （最大值）FRFET MOSFET
三相逆变模块，带有栅极驱动器和保护功能
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
• 内置自举二极管以简化印刷电路板布局
• 低侧MOSFET 的三个开源引脚用于三相电流感测
概述
• 高电平有效接口，可用于3.3 / 5 V 逻辑电平，施密
特触发脉冲输入
FSB50450A/AS/AT 是一款先进的Motion SPM® 5 模块，
为交流感应、无刷直流电机和 PMSM 电机提供非常全面
的高性能逆变输出级。这些模块集成了优化的内置
MOSFET（FRFET® 技术）的栅极驱动以最小化电磁干扰
和能量损耗，同时也提供多重模组保护特性，包括欠压闭
锁和热监测。内置的高速 HVIC 只需要一个单电源电压，
将逻辑电平栅极输入转化为适合驱动模块内部 MOSFET
的高电压、高电流驱动信号。独立的开源 MOSFET 端子
在每个相位均有效，可支持大量不同种类的控制算法。
• 针对低电磁干扰进行优化
• 内置于HVIC 的温度感测
• 用于栅极驱动和欠压保护的HVIC
• 绝缘等级：1500 Vrms/ 分
• 湿度敏感等级(MSL) 3
• 符合RoHS 标准
应用
• 小功率交流电机驱动器的三相逆变器驱动
FSB50450A
FSB50450AS
FSB50450AT
封装标识与定购信息
器件封装
FSB50450A
FSB50450AS
FSB50450AT
器件
封装
卷盘大小
包装类型
数量
15
FSB50450A
FSB50450AS
FSB50450AT
SPM5P-023
SPM5Q-023
SPM5N-023
Rail
不适用
330mm
NA
450
15
卷带和卷盘
Rail
©2012 Fairchild Semiconductor Corporation
1
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
绝对最大额定值
逆变部分（单个MOSFET，除非另有说明。）
符号
VDSS
*ID 25
*ID 80
*IDP
参数
工作条件
额定值
500
1.5
单位
V
单个MOSFET 的漏极- 源极电压
单个MOSFET 的漏极持续电流
单个MOSFET 的漏极持续电流
单个MOSFET 的漏极峰值电流
单个MOSFET 的漏极电流有效值
最大功耗
TC = 25°C
TC = 80°C
A
1.1
A
TC = 25°C, PW < 100 s
3.9
A
*IDRMS
*PD
TC = 80°C, FPWM < 20 kHz
TC = 25°C, For Each MOSFET
0.8
Arms
W
14
控制部分（单个HVIC，除非另有说明。）
符号
VCC
VBS
VIN
参数
工作条件
施加在VCC 和COM 之间
施加在VB 和VS 之间
额定值
单位
20
20
V
V
V
控制电源电压
高侧偏压
-0.3 ~ VCC + 0.3
输入信号电压
施加在VIN 和COM 之间
自举二极管部分（单个自举二极管，除非另有说明。）
符号
参数
工作条件
额定值
单位
VRRMB
最大重复反向电压
正向电流
V
A
500
0.5
* IFB
TC = 25°C
* IFPB
正向电流（峰值）
TC = 25°C，脉冲宽度小于1 ms
1.5
A
热阻
符号
参数
工作条件
额定值
单位
逆变工作条件下的单个MOSFET
（注1）
°C/W
RqJC
结点- 壳体的热阻
8.9
整个系统
符号
TJ
参数
工作条件
额定值
-40 ~ 150
-40 ~ 125
单位
°C
工作结温
存储温度
TSTG
°C
60 Hz，正弦波形，1 分钟，连接陶
瓷基板到引脚
VISO
1500
Vrms
隔离电压
注：
1. 关于壳体温度T 的测量点，参见图4。
C
2. 标记为“ * ” 的为计算值或设计因数。
©2012 Fairchild Semiconductor Corporation
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
引脚描述
引脚号
1
引脚名
COM
VB(U)
VCC(U)
IN(UH)
IN(UL)
N.C
引脚描述
IC 公共电源接地
2
U 相高端侧MOSFET 驱动的偏压
U 相IC 和低侧MOSFET 驱动的偏压
U 相高侧的信号输入
3
4
5
U 相低侧的信号输入
6
无连接
7
VB(V)
VCC(V)
IN(VH)
IN(VL)
VTS
V 相高侧MOSFET 驱动的偏压
V 相IC 和低侧MOSFET 驱动的偏压
V 相高侧的信号输入
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V 相低侧的信号输入
HVIC 温度感测输出
VB(W)
VCC(W)
IN(WH)
IN(WL)
N.C
W 相高侧MOSFET 驱动的偏压
W 相IC 和低侧MOSFET 驱动的偏压
W 相高侧的信号输入
W 相低侧的信号输入
无连接
P
直流输入正端
U, VS(U)
NU
高侧MOSFET 驱动的U 相偏压接地输出
U 相的直流输入负端
NV
V 相的直流输入负端
V, VS(V)
NW
高端MOSFET 驱动的V 相偏压接地输出
W 相的直流输入负端
W, VS(W)
高侧MOSFET 驱动的W 相偏压接地输出
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(17) P
VCC
HIN
VB
HO
VS
LO
(18) U, VS(U)
LIN
COM
(6) N.C
(19) NU
(20) NV
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
VCC
HIN
LIN
VB
HO
VS
LO
(21) V, VS(V)
COM
VTS
(11) VTS
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
VB
HO
VS
LO
(22) NW
(23) W, VS(W)
LIN
COM
(16)
N.C
图1. 引脚布局和内部框图（仰视图）
注：
®
3. 每个低侧MOSFET 的源极端子与Motion SPM 5 中的电源接地或偏压接地不连接。外部连接应当如图3 所示。
©2012 Fairchild Semiconductor Corporation
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
电气特性（TJ = 25°C、VCC = VBS = 15 V，除非另有说明。）
逆变器部分（单个MOSFET，除非另有说明。）
符号
参数
工作条件
最小值 典型值 最大值 单位
漏极- 源极
击穿电压
BVDSS
500
-
-
V
mA
V
IN = 0 V、ID = 1 mA （第二个注1）
零栅极电压
漏极电流
IDSS
RDS(on)
VSD
VIN = 0 V, VDS = 500 V
-
-
-
-
1
漏极至源极静态
导通电阻
VCC = VBS = 15 V, VIN = 5 V, ID = 1.0 A
VCC = VBS = 15V, VIN = 0 V, ID = -1.0 A
1.9
-
2.4
1.2
漏极－源极二极管
正向电压
V
tON
tOFF
trr
-
-
-
-
-
1250
680
200
60
-
-
-
-
-
ns
ns
ns
J
J
VPN = 300 V, VCC = VBS = 15 V, ID = 1.0 A
开关时间
V
IN = 0 V 5 V、电感负载L = 3 mH
高侧和低侧MOSFET 开关（注2）
EON
EOFF
10
VPN = 400 V, VCC = VBS = 15 V, ID = IDP
,
RBSOA
VDS = BVDSS, TJ = 150°C
反向偏压安全工作区
整个区域
高侧和低侧MOSFET 开关（注3）
控制部分（单个HVIC，除非另有说明。）
符号
参数
工作条件
最小值 典型值 最大值 单位
VCC = 15 V,
VIN = 0 V
IQCC
-
-
200
A
A
V
CC 静态电流
施加在VCC 和COM 之间
VBS = 15 V,
VIN = 0 V
施加在VB(U)- U 之间
IQBS
-
-
100
VBS 静态电流
V
B(V) - V, VB(W) - W
VCC = 15 V、fPWM = 20 kHz、
占空比= 50%，施加于低端的一个
PWM 信号输入
IPCC
V
CC - COM
-
-
-
-
800
700
V
CC 工作电源电流
VB(U) - VS(U),
V
VB(W) - VS(W)
VCC = VBS = 15 V、
fPWM = 20 kHz、占空比= 50%，
施加于高端的一个PWM 信号输入
IPBS
B(V) - VS(V)
,
VBS 工作电源电流
UVCCD
UVCCR
UVBSD
UVBSR
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
V
V
CC 欠压保护检测电平
CC 欠压保护复位电平
低侧欠压
保护（图8）
VBS 欠压保护检测电平
VBS 欠压保护复位电平
高侧欠压
保护（图9）
HVIC Temperature
Sensing Voltage Output
VTS
mV
600
790
980
VCC = 15 V、THVIC = 25°C （第二个注4）
VIH
VIL
-
-
-
2.9
-
V
V
导通阈值电压
关断阈值电压
逻辑高电平
施加在VIN 和COM 之间
0.8
逻辑低电平
自举二极管部分（单个自举二极管，除非另有说明。）
符号
VFB
trrB
参数
工作条件
最小值 典型值 最大值 单位
-
-
2.5
80
-
-
V
正向电压
反向恢复时间
IF = 0.1 A、TC = 25°C （第二个注5）
IF = 0.1 A, TC = 25°C
ns
©2012 Fairchild Semiconductor Corporation
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
推荐工作条件
符号
参数
工作条件
最小值 典型值 最大值 单位
VPN
VCC
-
13.5
13.5
3.0
0
300
400
16.5
16.5
VCC
0.6
-
V
V
电源电压
施加在P 和N 之间
15.0
控制电源电压
施加在VCC 和COM 之间
施加在VB 和VS 之间
VBS
15.0
V
高端偏压
VIN(ON)
VIN(OFF)
tdead
-
-
V
输入导通阈值电压
输入关断阈值电压
防止桥臂直通的死区时间
PWM 开关频率
施加在VIN 和COM 之间
V
V
CC = VBS = 13.5 ~ 16.5 V, TJ 150°C
1.0
-
-
s
kHz
fPWM
TJ 150°C
15
-
Built-In Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
TC = 25°C
图2. 内置自举二极管特性（典型值）
注：
®
1. BV
是Motion SPM 5 产品中的单个MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感，V 应远低于该值，因此V 在任何情况下不得超过BV
。
DSS
PN
PN
DSS
2. t 和t
包括内部驱动IC 的传输延迟。所列出的数值是在实验室测试条件下测得，在实际应用中因为印刷电路板和布线的差异，数值也会有所不同。请参阅图6 介绍的开关
OFF
ON
时间定义，以及图7 中的开关测试电路。
3. 每个MOSFET 在开关工作时的峰值电流和电压也应在安全工作区（SOA）的范围内。请参阅图7 中的RBSOA 测试电路，它与开关测试电路相同。
4. V 只能用作模块的温度感测，但不能自动关闭MOSFET。
ts
5. 内置自举二极管其阻抗特性约为15 Ω。请参阅图2。
©2012 Fairchild Semiconductor Corporation
5
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
These values depend on PWM control algorithm
* Example Circuit : V phase
C
1
+15 V
VDC
P
V
HIN
0
LIN
0
Output
Note
VCC
HIN
LIN
VB
HO
VS
LO
Inverter
Output
Z
Both FRFET Off
Low side FRFET On
High side FRFET On
Shoot through
R
5
0
1
0
VDC
1
0
C3
C5
COM
VTS
1
1
Forbidden
Z
R
3
N
Open Open
Same as (0,0)
C4
One Leg Diagram of Motion SPM® 5 Product
C2
10 F
*
Example of Bootstrap Param: ters
C = C2 = 1 F Ceramic Capacitor
1
图3. 推荐的MCU 接口和自举电路及其参数
注：
1. 自举电路元件的参数取决于PWM 算法。上述为开关频率为15 kHz 时的参数的典型例子。
2. RC 耦合（R , R 和C ）在Motion SPM 5 产品和MCU （虚线显示部分）的每个输入端都可用于防止由浪涌噪声产生的错误信号。
5
5
4
3. 印刷电路板图形中的粗线应尽量短且粗，以减少电路中的寄生电感，从而导致浪涌电压的降低。旁路电容如C 、C 和C 应具有良好的高频特性，以吸收高频纹波电流。
1
2
3
图4. 壳体温度测量
注：
4. 将热电耦贴在SPM 5 封装（如果应用到，放在SPM 5 封装和散热片中间）的散热片的顶部，以获得正确的温度测量数值。
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
140
160
THVIC [oC]
图5. V 温度曲线（典型）
TS
©2012 Fairchild Semiconductor Corporation
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
VIN
VIN
Irr
120% of ID
100% of ID
VDS
ID
10% of ID
ID
VDS
tON
trr
tOFF
(a) Turn-on
(b) Turn-off
图6. 开关时间定义
CBS
VCC
ID
VCC
HIN
LIN
VB
HO
VS
LO
L
VDC
+
VDS
-
COM
VTS
One Leg Diagram of Motion SPM® 5 Product
图7. 开关和RBSOA （单脉冲）测试电路（低端）
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVCCR
Low-side Supply, VCC
MOSFET Current
UVCCD
图8. 欠压保护（低侧）
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVBSR
High-side Supply, VBS
MOSFET Current
UVBSD
图9. 欠压保护（高侧）
©2012 Fairchild Semiconductor Corporation
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FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7
C1
(1) COM
(2)VB(U)
(17)P
(3)VCC(U)
VCC
HIN
VB
HO
VS
LO
R5
(4)IN
(UH)
(18)U,VS(U)
(5)IN
(UL)
VDC
C3
LIN
C5
C2
COM
(6)N.C
(7)VB(V)
(8)VCC(V)
(19)NU
(20)NV
VCC
HIN
LIN
VB
HO
VS
LO
(9)IN
(VH)
(21)V,VS(V)
(10) IN
(VL)
M
COM
VTS
(11)VTS
(12)VB(W)
(13)VCC(W)
(22)NW
VCC
HIN
VB
HO
VS
LO
(14) IN
(WH)
(23)W,VS(W)
(15) IN
(WL)
LIN
COM
(16)N.C
C4
R4
For current-sensing and protection
15 V
Supply
C6
R3
图10. 应用电路实例
注：
1. 关于引脚的位置，请参阅图1。
®
2. SPM 5 产品和MCU 的每个输入端的RC 耦合（R 和C 、R 和C ）和C 都可用于防止由浪涌噪声产生的错误信号。
5
5
4
6
4
3. 由于位于COM 和低侧MOSFET 的源极端子之间，R 的压降会影响低端的开关性能和自举特性。为此，稳态情况下R 的压降应小于1 V。
3
3
4. 为避免浪涌电压和HVIC 故障，接地线和输出端子之间的接线应短且粗。
5. 所有的滤波电容器应紧密连接到Motion SPM 5 产品，它们应当具有能够很好的阻挡高频纹波电流的特性。
©2012 Fairchild Semiconductor Corporation
8
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轮廓封装详图(FSB50450A)
封装图纸作为一项服务，提供给考虑Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和/ 或
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产品保修的部分。
随时访问Fairchild 在线封装网页，可以获取最新的封装图纸：
https://www.fairchildsemi.com/package-drawings/MO/MOD23DC.pdf
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封装图纸作为一项服务，提供给考虑Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和/ 或
日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问Fairchild 在线封装网页，可以获取最新的封装图纸：
https://www.fairchildsemi.com/package-drawings/MO/MOD23DG.pdf
©2012 Fairchild Semiconductor Corporation
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轮廓封装详图(FSB50450AT)
封装图纸作为一项服务，提供给考虑Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和/ 或
日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问Fairchild 在线封装网页，可以获取最新的封装图纸：
https://www.fairchildsemi.com/package-drawings/MO/MOD23DF.pdf
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intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
AttitudeEngine™
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
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TinyPWM¥
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AX-CAP®*
Power Supply WebDesigner¥
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PowerXS™
BitSiC¥
Build it Now¥
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CorePOWER¥
CROSSVOLT¥
CTL¥
Programmable Active Droop¥
GTO¥
IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
TriFault Detect¥
TRUECURRENT®*
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Saving our world, 1mW/W/kW at a time™
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ESBC¥
MicroPak¥
SMART START¥
Solutions for Your Success¥
SPM®
®
UHC®
MicroPak2¥
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VCX¥
VisualMax¥
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XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
MTi®
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MTx®
FastvCore¥
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FPS¥
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
MVN®
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Xsens™
®
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❺
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OPTOLOGIC®
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Definition of Terms
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Definition
Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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First Production
Full Production
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Rev. I77
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