FSB619 [ONSEMI]
NPN 低饱和晶体管;型号: | FSB619 |
厂家: | ONSEMI |
描述: | NPN 低饱和晶体管 放大器 光电二极管 晶体管 |
文件: | 总7页 (文件大小:320K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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September 2015
FSB619
NPN Low-Saturation Transistor
Features
C
• This device is designed with high-current gain and low-saturation
voltage with collector currents up to 3 A continuous.
E
B
SuperSOTTM-3 (SOT-23)
Ordering Information
Part Number
Marking
Package
Packing Method
FSB619
619
SSOT 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
50
50
V
5
V
Collector Current - Continuous
2
A
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
°C
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
500
4
Unit
mW
Total Device Dissipation(3)
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
250
Note:
3. Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Parameter
Conditions
Min.
Max.
Unit
V
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
50
50
5
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC = 100 μA, IE = 0
IE = 100 μA, IC = 0
VCB = 40 V, IE = 0
V
V
100
100
100
nA
nA
nA
IEBO
Emitter Cut-Off Current
VEB = 4 V, IC = 0
ICES
Collector Emitter Cut-Off Current
VCES = 40 V
IC = 10 mA, VCE = 2 V
IC = 200 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 100 mA, IB = 10 mA
IC = 1 A, IB = 10 mA
IC = 2 A, IB = 50 mA
IC = 2 A, IB = 50 mA
IC = 2 A, VCE = 2 V
VCB = 10 V, IE = 0, f = 1 MHz
200
300
200
100
hFE
DC Current Gain(4)
20
235
320
1
Collector-Emitter Saturation
Voltage(4)
V
CE(sat)
mV
VBE(sat) Base-Emitter Saturation Voltage(4)
V
V
VBE(on)
Cobo
Base-Emitter On Voltage(4)
1
Output Capacitance
30
pF
IC = 50 mA, VCE = 10 V,
f = 100 MHz
fT
Transition Frequency
100
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
2
Typical Performance Characteristics
400
1200
1000
800
600
400
200
0
TA = 25oC
IB = 0.9 mA
350
TA = 25oC
IB = 3 mA
B = 2.5 mA
B = 2 mA
B = 1.5 mA
IB = 0.8 mA
I
300
IB = 0.7 mA
I
250
200
150
100
50
IB = 0.6 mA
B = 0.5 mA
I
I
IB = 0.4 mA
IB = 0.3 mA
IB = 1 mA
IB = 0.2 mA
IB = 0.1 mA
0
0
2
4
6
8
10
0
2
4
6
8
10
1.0
10
VCE - Collector-Emitter Voltage (V)
VCE - Collector-Emitter Voltage (V)
Figure 1. Static Characteristics
Figure 2. Static Characteristics
700
600
500
400
300
200
100
0
10
1
TA = 150oC
0.1
TA = 25oC
TA = -55oC
TA = 150oC
TA = 25oC
TA = -55oC
0.01
1E-3
1E-4
1E-4
1E-3
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
VBE(ON) - Base-Emitter On Voltage (V)
IC - Collector Current (A)
Figure 3. DC Current Gain vs. Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Voltage
1
1
IC = 20IB
IC = 10IB
0.1
0.1
0.01
1E-3
TA = 150oC
TA = 25oC
TA = 150oC
0.01
TA = 25oC
TA = -55oC
TA = -55oC
1E-3
1E-4
1E-3
0.01
0.1
1
10
1E-4
1E-3
0.01
0.1
1
IC - Collector Current (A)
IC - Collector Current (A)
Figure 5. Collector-Emitter Saturation Voltage vs.
Collector Voltage
Figure 6. Collector-Emitter Saturation Voltage vs.
Collector Voltage
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
10
10
IC = 10IB
IC = 20IB
TA = -55oC
TA = -55oC
1
1
TA = 25oC
TA = 25oC
TA = 150oC
TA = 150oC
0.1
1E-4
0.1
1E-4
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
IC - Collector Current (A)
IC - Collector Current (A)
Figure 7. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 8. Base-Emitter Saturation Voltage vs.
Collector Current
1000
1000
100
100
TA = 150oC
TA = 150oC
10
10
1
1
0.1
TA = 25oC
0.1
TA = 25oC
TA = -55oC
0.01
1E-3
1E-4
0.01
TA = -55oC
1E-3
10
20
30
40
50
60
1
2
3
4
5
6
VCB - Collector-Base Voltage (V)
VEB - Emitter-Base Voltage (V)
Figure 9. Collector Cut-Off Current vs.
Collector-Base Voltage
Figure 10. Emitter Cut-Off Current vs.
Emitter-Base Voltage
1000
100
900
800
700
90
80
70
f = 1 MHz
f = 1 MHz
Level = 40 mV
TA = 25oC
Level = 40 mV
T
A = 25oC
600
60
500
50
400
300
40
30
200
20
100
0.1
10
0.1
1
10
100
1
10
VEB - Emitter-Base Voltage (V)
VCB - Collector-Base Voltage (V)
Figure 11. Typical Input Capacitance
Figure 12. Typical Output Capacitance
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
4
0.95
2.92±0.12
3
A
1.40
B
1.40±0.12
2.20
1
2
0.508
0.382
(0.29)
1.00
M
0.10
A B
0.95
1.90
LAND PATTERN RECOMMENDATION
1.90
SEE DETAIL A
1.12 MAX
0.10
0.00
(0.94)
M
0.10
C
C
2.51±0.20
GAGE PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO JEDEC REFERENCE AS OF AUGUST 2003
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 2009.
0.178
0.102
0.20
E) DRAWING FILE NAME: MKT-MA03BREV3
0.43
0.33
SEATING
PLANE
(0.56)
SCALE: 50:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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