FSBF15CH60CT [ONSEMI]
智能功率模块，600V，15A;
| 型号： | FSBF15CH60CT |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块，600V，15A 局域网 电动机控制 |
| 文件： | 总19页 (文件大小：984K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2009
TM
Motion - SPM
FSBF15CH60CT
Smart Power Module
Features
General Description
It is an advanced motion-smart power module (Motion-SPMTM
)
•
UL Certified No.E209204(SPM27-JA package)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur-
ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
•
600V-15A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
•
•
Easy PCB layout due to built in bootstrap diode
Divided negative dc-link terminals for inverter current sensing
applications
•
•
Single-grounded power supply due to built-in HVIC
Isolation rating of 2500Vrms/min.
Applications
•
AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
•
Home appliances applications like air conditioner and wash-
ing mashine
Top View
Bottom View
44mm
26.8mm
Figure 1.
©2009 Fairchild Semiconductor Corporation
FSBF15CH60CT Rev. A
1
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Integrated Power Functions
•
600V-50A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
•
For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 12 and 13.
•
For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
•
•
Fault signaling: Corresponding to UV (Low-side supply) and SC faults
Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
Figure 2.
2
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FSBF15CH60CT Rev. A
Pin Descriptions
Pin Number
Pin Name
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
1
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
2
3
Signal Input for Low-side U Phase
4
Signal Input for Low-side V Phase
5
Signal Input for Low-side W Phase
6
Fault Output
7
CFOD
CSC
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
8
9
IN(UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
NV
Negative DC–Link Input for V Phase
NW
Negative DC–Link Input for W Phase
U
Output for U Phase
V
Output for V Phase
W
Output for W Phase
P
Positive DC–Link Input
3
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FSBF15CH60CT Rev. A
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) VB(W)
VB
(18) VCC(H)
VCC
OUT
COM
(17) IN(WH)
W (26)
VS
IN
(20) VS(W)
(15) VB(V)
VB
(14) VCC(H)
VCC
COM
IN
OUT
VS
(13) IN(VH)
(16) VS(V)
V (25)
(11) VB(U)
VB
(10) VCC(H)
VCC
COM
IN
OUT
VS
(9) IN(UH)
(12) VS(U)
U (24)
(8) CSC
(7) CFOD
(6) VFO
OUT(WL)
OUT(VL)
C(SC)
C(FOD)
VFO
NW (23)
NV (22)
NU (21)
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
IN(WL)
IN(VL)
IN(UL)
(2) COM
(1) VCC(L)
COM
VCC
OUT(UL)
VSL
Note:
1) Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3) Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
4
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FSBF15CH60CT Rev. A
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
VPN
Parameter
Conditions
Applied between P- NU, NV, NW
Applied between P- NU, NV, NW
Rating
450
Units
Supply Voltage
V
V
VPN(Surge)
VCES
± IC
Supply Voltage (Surge)
500
Collector-emitter Voltage
600
V
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
TC = 25°C
15
A
± ICP
PC
TC = 25°C, Under 1ms Pulse Width
TC = 25°C per One Chip
(Note 1)
30
A
25
W
°C
TJ
Operating Junction Temperature
-40 ~ 150
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.
Control Part
Symbol
VCC
Parameter
Conditions
Rating
20
Units
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
V
V
VBS
High-side Control Bias
Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W)
VS(W)
-
20
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL)
IN(WL) - COM
,
-0.3~17
V
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
Applied between VFO - COM
Sink Current at VFO Pin
-0.3~VCC+0.3
5
V
mA
V
VSC
Current Sensing Input Voltage Applied between CSC - COM
-0.3~VCC+0.3
Bootstrap Diode Part
Symbol
Parameter
Conditions
Rating
600
Units
VRRM
IF
Maixmum Repetitive Reverse Voltage
Forward Current
V
A
TC = 25°C
0.5
IFP
TJ
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
2
A
Operating Junction Temperature
-40 ~ 150
°C
Total System
Symbol
Parameter
Conditions
Rating
Units
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2ms
400
V
TSTG
VISO
Storage Temperature
Isolation Voltage
-40 ~ 150
2500
°C
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to ceramic substrate
Vrms
Thermal Resistance
Symbol
Rth(j-c)Q
Parameter
Conditions
Min. Typ. Max. Units
Junction to Case Thermal Inverter IGBT part (per 1/6 module)
Resistance
-
-
-
-
4.9
5.7
°C/W
°C/W
Rth(j-c)F
Inverter FWD part (per 1/6 module)
Note:
2. For the measurement point of case temperature(T ), please refer to Figure 2.
C
5
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FSBF15CH60CT Rev. A
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
Min. Typ. Max. Units
VCE(SAT)
Collector-Emitter Saturation VCC = VBS = 15V
IC = 15A, TJ = 25°C
-
-
2.2
V
Voltage
VIN = 5V
VF
FWD Forward Voltage
Switching Times
VIN = 0V
IC = 15A, TJ = 25°C
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
V
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
mA
HS
tON
tC(ON)
tOFF
tC(OFF)
trr
VPN = 300V, VCC = VBS = 15V
IC = 15A
VIN = 0V « 5V, Inductive Load
(Note 3)
0.85
0.15
0.45
0.10
0.10
0.55
0.25
0.45
0.10
0.15
-
-
-
-
-
-
-
-
-
-
-
1
LS
tON
VPN = 300V, VCC = VBS = 15V
IC = 15A
VIN = 0V « 5V, Inductive Load
(Note 3)
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector-Emitter
Leakage Current
VCE = VCES
Note:
3.
t
and t
include the propagation delay time of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally.
C(OFF)
ON
OFF
C(ON)
For the detailed information, please see Figure 4.
Control Part
Symbol
Parameter
Conditions
Min.
Typ. Max. Units
IQCCL
IQCCH
IQBS
Quiescent VCC Supply
Current
VCC = 15V
IN(UL, VL, WL) = 0V
VCC(L) - COM
-
-
-
-
23
mA
mA
mA
VCC = 15V
IN(UH, VH, WH) = 0V
VCC(H) - COM
-
-
600
500
Quiescent VBS Supply
Current
VBS = 15V
VB(U) - VS(U), VB(V) -VS(V),
IN(UH, VH, WH) = 0V VB(W) - VS(W)
VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up
VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up
VCC = 15V (Note 4)
VFOH
VFOL
Fault Output Voltage
4.5
-
-
-
-
V
V
0.8
0.55
13.0
13.4
12
VSC(ref)
UVCCD
UVCCR
UVBSD
UVBSR
tFOD
Short Circuit Trip Level
0.45
10.7
11.2
10
0.5
11.9
12.4
11
V
Supply Circuit Under-
Voltage Protection
Detection Level
V
Reset Level
V
Detection Level
V
Reset Level
10.5
1.0
2.8
-
11.5
1.8
-
12.5
-
V
Fault-out Pulse Width
ON Threshold Voltage
CFOD = 33nF (Note 5)
ms
V
VIN(ON)
Applied between IN(UH), IN(VH), IN(WH), IN(UL)
IN(VL), IN(WL) - COM
,
-
VIN(OFF) OFF Threshold Voltage
-
0.8
V
Note:
4. Short-circuit current protection is functioning only at the low-sides.
-6
5. The fault-out pulse width t
depends on the capacitance value of C
according to the following approximate equation : C
= 18.3 x 10 x t
[F]
FOD
FOD
FOD
FOD
6
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FSBF15CH60CT Rev. A
100% IC 100% IC
trr
VCE
IC
IC
VCE
VIN
VIN
tON
tOFF
tC(ON)
tC(OFF)
VIN(ON)
VIN(OFF)
10% VCE
10% IC
10% IC 90% IC 10% VCE
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
Switching Loss (Typical)
SWITCHINGLOSS(OFF) VS. COLLECTORCURRENT
VCE=300V
SWITCHINGLOSS(ON) VS. COLLECTORCURRENT
1000
900
800
700
600
500
400
300
200
100
0
500
450
400
350
300
250
200
150
100
50
VCE=300V
VCC=15V
VCC=15V
V =5V
V =5V
IN
IN
TJ=25℃
TJ=150℃
TJ=25℃
TJ=150℃
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17
COLLECTOR CURRENT, Ic [AMPERES]
COLLECTOR CURRENT, Ic [AMPERES]
Figure 5. Switching Loss Characteristics
7
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FSBF15CH60CT Rev. A
Bootstrap Diode Part
Symbol
Parameter
Conditions
Min. Typ. Max. Units
VF
trr
Forward Voltage
IF = 0.1A, TC = 25°C
-
-
2.5
80
-
-
V
Reverse Recovery Time
IF = 0.1A, TC = 25°C
ns
Built in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
TC=25℃
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
Note:
6. Built in bootstrap diode includes around 15Ω resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Value
Symbol
Parameter
Conditions
Units
Min.
-
Typ. Max.
VPN
VCC
VBS
Supply Voltage
Applied between P - NU, NV, NW
300
15
400
16.5
18.5
V
V
V
Control Supply Voltage
High-side Bias Voltage
Applied between VCC(H), VCC(L) - COM
13.5
13.0
Applied between VB(U) - VS(U), VB(V) - VS(V)
VB(W) - VS(W)
,
15
dVCC/dt, Control supply variation
dVBS/dt
-1
-
-
-
1
-
V/ms
ms
tdead
Blanking Time for Preventing For Each Input Signal
1.5
Arm-short
fPWM
VSEN
PWM Input Signal
Voltage for Current Sensing
-20°C £ TJ £ 125°C
-
20
4
kHz
V
Applied between NU, NV, NW - COM
(Including surge voltage)
-4
8
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FSBF15CH60CT Rev. A
Mechanical Characteristics and Ratings
Limits
Parameter
Conditions
Units
Min.
Typ.
0.62
-
Max.
1.00
+120
-
Mounting Torque
Device Flatness
Weight
Mounting Screw: - M3
Recommended 0.62N•m
Note Figure 5
0.51
N•m
mm
g
0
-
15.4
( + )
( + )
Figure 7. Flatness Measurement Position
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FSBF15CH60CT
FSBF15CH60CT
SPM27-JA
-
-
10
9
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FSBF15CH60CT Rev. A
Time Charts of SPMs Protective Function
Input Signal
Protection
RESET
SET
RESET
Circuit State
UVCCR
a1
a6
UVCCD
Control
Supply Voltage
a3
a4
a2
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-side)
Input Signal
Protection
RESET
SET
RESET
Circuit State
UVBSR
b5
b1
Control
Supply Voltage
UVBSD
b2
b3
b4
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR
)
b6 : Normal operation: IGBT ON and carrying current
Figure 9. Under-Voltage Protection (High-side)
10
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FSBF15CH60CT Rev. A
Lower arms
control input
c6
c7
Protection
circuit state
SET
RESET
Internal IGBT
Gate-Emitter Voltage
c4
c3
c2
SC
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of the shunt
resistance
CR circuit time
constant delay
c5
Fault Output Signal
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO
.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state
Figure 10. Short-Circuit Current Protection (Low-side Operation only)
11
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FSBF15CH60CT Rev. A
5V-Line
SPM
RPF=4.7㏀
100Ω
100Ω
100Ω
,
,
IN(UH) IN(VH)
IN
(WH)
,
,
IN(UL) IN(VL)
IN(WL)
CPU
VFO
1nF
1nF
1nF
CPF= 1nF
COM
Note:
1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig-
nal voltage drop at input terminal.
2) The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 11. Recommended CPU I/O Interface Circuit
These Values depend on PWM Control Algorithm
One-Leg Diagram of SPM
P
Vcc VB
IN
HO
VS
15V-Line
0.1uF
22uF
COM
Inverter
Output
Vcc
IN OUT
VSL
1000uF
1uF
COM
N
Note:
1) The ceramic capacitor placed between V -COM should be over 1uF and mounted as close to the pins of the SPM as possible.
CC
Figure 12. Recommended Bootstrap Operation Circuit and Parameters
12
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FSBF15CH60CT Rev. A
5V line
15V line
P (27)
(19) VB(W)
(18) VCC(H)
VB
VCC
OUT
VS
RS
RS
RS
COM
IN
CBS
CBSC
(17) IN(WH)
(20) VS(W)
W
(26)
Gating WH
Gating VH
Gating UH
CPS
(15) VB(V)
VB
(14) VCC(H)
VCC
OUT
VS
COM
IN
(13) IN(VH)
(16) VS(V)
CBS
CBSC
V (25)
M
CPS
(11) VB(U)
VB
C
P
U
(10) VCC(H)
VCC
CDCS
Vdc
OUT
VS
COM
IN
CBSC
CBS
(9) IN(UH)
(12) VS(U)
U (24)
CPS
RF
RPF
(8) CSC
(7) CFOD
(6) VFO
CSC
OUT(WL)
OUT(VL)
C(SC)
C(FOD)
VFO
RSW
NW (23)
RS
RS
CFOD
Fault
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
Gating WL
Gating VL
IN(WL)
IN(VL)
IN(UL)
RS
RS
RSV
NV (22)
Gating UL
(2) COM
(1) VCC(L)
COM
VCC
CPF
CBPF
CPS
CPS CPS
OUT(UL)
VSL
RSU
NU (21)
CSPC15
CSP15
RFW
Input Signal for
Short-Circuit Protection
W-Phase Current
V-Phase Current
U-Phase Current
RFV
RFU
CFW
CFU
CFV
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
3) V output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kW resistance. Please refer to Figure11.
FO
4) C
of around 7 times larger than bootstrap capacitor C is recommended.
BS
SP15
5) V output pulse width should be determined by connecting an external capacitor(C
FO
) between C
(pin7) and COM(pin2). (Example : if C
= 33 nF, then t = 1.8ms
FOD
FOD
FOD FO
(typ.)) Please refer to the note 5 for calculation method.
6) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommended for the prevention
of input signal oscillation. R time constant should be selected in the range 50~150ns. C should not be less than 1nF. (Recommended R =100Ω, C =1nF)
C
S
PS
PS
S
PS
7) To prevent errors of the protection function, the wiring around R and C should be as short as possible.
F
SC
8) In the short-circuit protection circuit, please select the R C time constant in the range 1.5~2ms.
F
SC
9) Each capacitor should be mounted as close to the pins of the SPM as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1~0.22mF between the P&GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) C
should be over 1mF and mounted as close to the pins of the SPM as possible.
SPC15
Figure 13. Typical Application Circuit
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Detailed Package Outline Drawings
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Detailed Package Outline Drawings (Continued)
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相关型号：
FSBH0170NYF116
0.9 A SWITCHING CONTROLLER, 106 kHz SWITCHING FREQ-MAX, PDIP8, GREEN, MS-001BA, DIP-8
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