FSCQ0965RTYDTU [ONSEMI]
用于 110W 离线反激转换器的 650V 集成电源开关;
| 型号： | FSCQ0965RTYDTU |
| 厂家： | 
ONSEMI |
| 描述： | 用于 110W 离线反激转换器的 650V 集成电源开关 开关 电源开关 转换器 |
| 文件： | 总33页 (文件大小：1968K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Green Mode Fairchild
Power Switch (FPSt)
FSCQ Series
FSCQ0765RT / FSCQ0965RT /
FSCQ1265RT / FSCQ1565RT
TO−220−5
CASE 340BH
MARKING DIAGRAM
Description
A Quasi−Resonant Converter (QRC) typically shows lower EMI
and higher power conversion efficiency compared to a conventional
hard−switched converter with a fixed switching frequency. Therefore,
a QRC is well suited for noise−sensitive applications, such as color TV
and audio. Each product in the FSCQ series contains an integrated
$Y&Z&3&K
CQxx65RT
®
Pulse Width Modulation (PWM) controller and a SENSEFET . This
series is specifically designed for quasi−resonant off−line Switch
Mode Power Supplies (SMPS) with minimal external components.
The PWM controller includes an integrated fixed frequency oscillator,
under−voltage lockout, leading−edge blanking (LEB), optimized gate
driver, internal soft−start, temperature−compensated precise current
sources for loop compensation, and self−protection circuitry.
Compared with a discrete MOSFET and PWM controller solution,
the FSCQ series can reduce total cost, component count, size,
and weight; while increasing efficiency, productivity, and system
reliability. These devices provide a basic platform for cost−effective
designs of quasi−resonant switching flyback converters.
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
CQXX65RT = Specific Device Code
XX
= 07, 09, 12, 15
Features
ORDERING INFORMATION
• Optimized for Quasi−Resonant Converter (QRC)
• Advanced Burst−Mode Operation for under 1 W Standby Power
Consumption
See detailed ordering and shipping information on page 31 of
this data sheet.
• Pulse−by−Pulse Current Limit
• Overload Protection (OLP) – Auto Restart
• Over−Voltage Protection (OVP) – Auto Restart
• Abnormal Over−Current Protection (AOCP) – Latch
• Internal Thermal Shutdown (TSD) – Latch
• Under−Voltage Lockout (UVLO) with Hysteresis
• Low Startup Current (Typical: 25 mA)
• Internal High Voltage SENSEFET
• Built−in Soft−Start (20 ms)
• Extended Quasi−Resonant Switching
• This is a Pb−Free and Halid−Free Device
Applications
• CTV
• Audio Amplifier
Related Resources
• https://www.onsemi.com/pub/Collateral/AN−4146.pdf
• https://www.onsemi.com/pub/Collateral/AN−4140.pdf
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
September, 2021 − Rev. 2
FSCQ1565RT/D
FSCQ Series
V
O
AC
IN
Drain
GND
FSCQ−Series
PWM
Sync
V
CC
V
FB
Figure 1. Typical Flyback Application
Table 1. MAXIMUM OUTPUT POWER (Note 1)
230 V + 15% (Note 2)
85−265 V
AC
AC
Product
Open Frame (Note 3)
100 W
Open Frame (Note 3)
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
85 W
110 W
140 W
170 W
130 W
170 W
210 W
1. The junction temperature can limit the maximum output power.
2. 230 V or 100/115 V with doubler.
AC
AC
3. Maximum practical continuous power in an open frame design at 50°C ambient.
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2
FSCQ Series
Internal Block Diagram
Sync
5
Vcc
3
Drain
1
+
Quasi−Resonant
(QR) Switching
Controller
+
fs
Threshold
−
−
9 V/15 V
Soft Start
4.6 V/2.6 V: Normal QR
3.0 V/1.8 V: Extended QR
Vcc good
Auxiliary
Burst Mode
Controller
OSC
Vref
Main Bias
VBurst
Normal Operation
Burst Switching
Normal
Internal
Bias
Vref
IBFB
Vref
IFB
Vref
IB
Operation
Vcc
Idelay
PWM
VFB
S
R
Q
Q
4
2.5 R
Gate
Driver
R
LEB
600 ns
VSD
Sync
S
R
Q
Q
AOCP
Q
Q
S
R
Vovp
Vcc good
2
GND
(Vcc = 9 V)
TSD
Vocp
Power Off Reset (Vcc = 6 V)
Figure 2. Functional Block Diagram
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3
FSCQ Series
Pin Configuration
SYNC
VFB
VCC
GND
5
4
3
2
DRAIN
1
Figure 3. Pin Assignments (Top View)
PIN DESCRIPTION
Pin No.
Symbol
Description
This pin is the high−voltage power SENSEFET drain connection.
This pin is the control ground and the SENSEFET source.
1
2
3
DRAIN
GND
VCC
This pin is the positive supply input. This pin provides internal operating current for both startup
and steady−state operation.
4
VFB
This pin is internally connected to the inverting input of the PWM comparator. The collector
of an opto−coupler is typically tied to this pin. For stable operation, a capacitor should be placed
between this pin and GND. If the voltage of this pin reaches 7.5 V, the overload protection
triggers, which results in the FPS] shutting down.
5
SYNC
This pin is internally connected to the sync detect comparator for quasi−resonant switching. In
normal quasi−resonant operation, the threshold of the sync comparator is 4.6 V / 2.6 V. Whereas,
the sync threshold is changed to 3.0 V / 1.8 V in an extended quasi−resonant operation.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Parameter
Drain Pin Voltage
Symbol
Value
650
Unit
V
V
DS
V
CC
Supply Voltage
20
V
Analog Input Voltage Range
V
sync
−0.3 to 13
V
V
−0.3 to V
15.2
16.4
21.2
26.4
3.8
FB
CC
Drain Current Pulsed (Note 4)
FSCQ0765RT
I
A
DM
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
Continuous Drain Current (T = 25°C)
C
I
A
C
D
(rms)
(rms)
(rms)
(T : Case Back Surface Temperature)
4.1
5.3
6.6
Continuous Drain Current* (T = 25°C)
I *
7.0
A
A
DL
D
(T : Case Back Surface Temperature)
DL
7.6
11.0
13.3
2.4
Continuous Drain Current (T = 100°C)
I
D
C
2.6
3.4
4.4
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4
FSCQ Series
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) (continued)
A
Parameter
Symbol
Value
570
Unit
Single−Pulsed Avalanche Energy (Note 5)
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
E
AS
mJ
630
950
1050
45
Total Power Dissipation (T = 25°C with Infinite Heat Sink)
P
D
W
C
49
50
75
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
T
150
°C
°C
°C
kV
V
J
T
A
−25 to +85
−55 to +150
2.0
T
STG
Human Body Model (All Pins Except V
)
(GND − V = 1.7 kV)
ESD
FB
FB
Machine Model (All Pins Except V
)
(GND − V = 170 V)
300
FB
FB
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. Repetitive rating: pulse width limited by maximum junction temperature.
5. L = 15 mH, starting T = 25°C. These parameters, although guaranteed by design, are not tested in production.
J
THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Characteristic
Characteristic
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
Symbol
Value
2.60
2.55
2.50
2.00
Unit
Junction−to Case Thermal Impedance
J
°C/W
C
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5
FSCQ Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SENSEFET PART
BV
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain−Source On−State Resistance
V
= 0 V, I = 250 mA
650
−
−
−
250
1.60
1.20
0.90
0.70
−
V
mA
W
DSS
GS
D
I
V
DS
= 650 V, V = 0 V
−
DSS
GS
R
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
V
V
V
V
= 10 V, I = 1 A
−
1.40
1.00
0.75
0.53
1415
1750
2400
3050
100
130
175
220
DS(ON)
GS
GS
GS
GS
D
= 10 V, I = 1 A
−
D
= 10 V, I = 1 A
−
D
= 10 V, I = 1 A
−
D
C
Input Capacitance
Output Capacitance
V
V
= 0 V, V = 25 V,
−
pF
pF
ISS
GS
DS
f = 1 MHz
−
−
−
−
−
−
C
= 0 V, V = 25 V,
−
−
OSS
GS
DS
f = 1 MHz
−
−
−
−
−
−
CONTROL SECTION
f
Switching Frequency
V
= 5 V, V = 18 V
18
0
20
5
22
10
0.80
98
−
kHz
%
OSC
FB
CC
Df
Switching Frequency Variation (Note 7)
Feedback Source Current
Maximum Duty Cycle
−25°C ≤ T ≤ 85°C
A
OSC
I
FB
V
FB
= 0.8 V, V = 18 V
0.50
92
−
0.65
95
0
mA
%
CC
D
V
= 5 V, V = 18 V
CC
MAX
FB
FB
D
Minimum Duty Cycle
V
= 0 V, V = 18 V
%
MIN
CC
V
UVLO Threshold Voltage
V = 1 V
FB
14
8
15
9
16
10
22
V
START
V
STOP
t
SS
Soft−Start Time (Note 6)
18
20
ms
BURST MODE SECTION
V
Burst Mode Enable Feedback Voltage
Burst Mode Feedback Source Current
Burst Mode Switching Time
0.25
60
0.40
100
1.4
0.55
140
1.6
V
BEN
BFB
I
V
= 0 V
mA
ms
ms
FB
t
V
= 0.9 V, Duty = 50%
1.2
1.2
BS
BH
FB
t
Burst Mode Hold Time
V
= 0.9 V → 0 V
1.4
1.6
FB
PROTECTION SECTION
V
Shutdown Feedback Voltage
Shutdown Delay Current
V
= 18 V
7.0
4
7.5
5
8.0
6
V
mA
V
SD
DELAY
CC
I
V
= 5 V, V = 18 V
FB CC
V
OVP
V
OCL
Over−Voltage Protection
V
= 3 V
11
12
1.0
−
13
1.1
−
FB
Over−Current Latch Voltage (Note 6)
Thermal Shutdown Temperature (Note 7)
V
CC
= 18 V
0.9
140
V
TSD
SYNC SECTION
°C
V
Sync Threshold in Normal QR (H)
Sync Threshold in Normal QR (L)
Sync Threshold in Extended QR (H)
Sync Threshold in Extended QR (L)
Extended QR Enable Frequency
Extended QR Disable Frequency
V
CC
= 18 V, V = 5 V
4.2
2.3
2.7
1.6
−
4.6
2.6
3.0
1.8
90
5.0
2.9
3.3
2.0
−
V
V
SH1
FB
V
SL1
SH2
V
V
V
V
SL2
f
kHz
kHz
SYH
f
−
45
−
SYL
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6
FSCQ Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
TOTAL DEVICE SECTION
I
Operating Supply Current in Normal
Operation (Note 8)
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
V
= 5 V
−
−
−
−
−
4
6
6
8
mA
OP
FB
6
8
7
9
I
Operating Supply Current in Burst Mode
(Non−Switching) (Note 8)
0.25
0.50
mA
OB
V
FB
= GND
I
Startup Current
V
= V − 0.1 V
START
−
−
25
50
50
mA
mA
START
CC
I
Sustain Latch Current (Note 6)
V
= V − 0.1 V
STOP
100
SN
CC
CURRENT SENSE SECTION
I
Maximum Current Limit (Note 9)
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1565RT
V
= 18 V, V = 5 V
4.40
5.28
6.16
7.04
0.65
0.60
0.80
−
5.00
6.00
7.00
8.00
0.90
0.90
1.20
1.00
5.60
6.72
7.84
8.96
1.15
1.20
1.60
−
A
LIM
CC
FB
I
Burst Peak Current
V
= 18 V, V = Pulse
A
BUR(pk)
CC FB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. These parameters, although guaranteed, are tested only in wafer test process.
7. These parameters, although guaranteed by design, are not tested in production.
8. This parameter is the current flowing in the control IC.
9. These parameters indicate inductor current.
10.These parameters, although guaranteed, are tested only in wafer test process.
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7
FSCQ Series
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Operating Supply Current
Figure 5. Burst Mode Supply Current
(Non−Switching)
Figure 7. Start Threshold Voltage
Figure 6. Startup Current
Figure 8. Stop Threshold Voltage
Figure 9. Initial Frequency
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8
FSCQ Series
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 10. Maximum Duty Cycle
Figure 11. Over−Voltage Protection
Figure 13. Shutdown Feedback Voltage
Figure 12. Shutdown Delay Current
Figure 14. Feedback Source Current
Figure 15. Burst Mode Feedback Source Current
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9
FSCQ Series
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 16. Feedback Offset Voltage
Figure 17. Burst Mode Enable Feedback Voltage
Figure 19. Sync. Threshold in Normal QR(L)
Figure 18. Sync. Threshold in Normal QR(H)
Figure 20. Sync. Threshold in Extended QR(H)
Figure 21. Sync. Threshold in Extended QR(L)
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10
FSCQ Series
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 23. Extended QR Disable Frequency
Figure 22. Extended QR Enable Frequency
Figure 24. Pulse−by−Pulse Current Limit
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11
FSCQ Series
Functional Description
The minimum average of the current supplied from the
AC is given by:
Startup
MIN
Ǹ
2 @ VAC
VSTART
Figure 25 shows the typical startup circuit and the
transformer auxiliary winding for the FSCQ series. Before
the FSCQ series begins switching, it consumes only startup
current (typically 25 mA). The current supplied from the AC
1
AVG
ISUP
+
−
@
ǒ
Ǔ
(eq. 1)
p
2
RSTR
min
where V
is the minimum input voltage, V
is
ac
START
line charges the external capacitor (C ) that is connected to
the FSCQ series’ start voltage (15 V), and R is
a1
str
the V pin. When V reaches the start voltage of 15 V
the startup resistor. The startup resistor should be
CC
CC
avg
(V ), the FSCQ series begins switching and its current
START
chosen so that I
is larger than the maximum
sup
consumption increases to IOP. Then, the FSCQ series
continues normal switching operation and the power
required is supplied from the transformer auxiliary winding,
startup current (50 mA).
Once the resistor value is determined, the maximum loss in
the startup resistor is obtained as:
unless V drops below the stop voltage of 9 V (V
guarantee stable operation of the control IC, V
). To
has
CC
STOP
2
MAX
2
MAX
Ǹ
ǒV
Ǔ
) V
CC
2
2 @ V
@ V
START AC
ȡ
ȣ
AC
START
1
Loss +
@
*
under−voltage lockout (UVLO) with 6 V hysteresis.
Figure 26 shows the relationship between the operating
supply current of the FSCQ series and the supply voltage
ȧ
ȧ
p
R
2
STR
Ȣ
Ȥ
(eq. 2)
(V ).
CC
max
where V
is the maximum input voltage.
ac
The startup resistor should have properly rated dissipation
wattage.
CDC
Synchronization
The FSCQ series employs a quasi−resonant switching
technique to minimize the switching noise and loss. In this
technique, a capacitor (Cr) is added between the MOSFET
drain and the source, as shown in Figure 27. The basic
waveforms of the quasi−resonant converter are shown in
Figure 28. The external capacitor lowers the rising slope of
the drain voltage to reduce the EMI caused when the
MOSFET turns off. To minimize the MOSFET’s switching
loss, the MOSFET should be turned on when the drain
voltage reaches its minimum value, as shown in Figure 28.
1N4007
Isup
AC line max
(V min − Vac
)
ac
Rstr
Da
VCC
FSCQ−Series
Ca2
Ca1
+
VDC
−
Np
Lm
CDC
Ns
Figure 25. Startup Circuit
Vo
Drain
ICC
IOP Value
+
Vds
−
Cr
Ids
FSCQ0565RT: 4 mA (Typ.)
FSCQ0765RT: 4 mA (Typ.)
FSCQ0965RT: 6 mA (Typ.)
FSCQ1265RT: 6 mA (Typ.)
FSCQ1565RT: 7 mA (Typ.)
Sync
GND
Da
Vco
Vcc
Rcc
Ca2
Na
IOP
Ca1
DSY
Power Up
RSY1
Power Down
ISTART
VCC
CSY
RSY2
VSTOP = 9 V VSTART = 15 V
VZ
Figure 26. Relationship between Operating Supply
Current and VCC Voltage
Figure 27. Synchronization Circuit
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12
FSCQ Series
MOSFET
On
Vds
MOSFET
Off
Vgs
Vds
2VRO
tQ
VRO
VRO
Vsync
V
VDC
Vrh (4.6 V)
Vrf (2.6 V)
tR
Ids
Ipk
MOSFET Gate
ON
Figure 28. Quasi−Resonant Operation Waveforms
ON
The minimum drain voltage is indirectly detected by
Figure 29. Normal QR Operation Waveforms
monitoring the V winding voltage, as shown in Figure 27
CC
and Figure 29. Choose voltage dividers, R
and R , so
SY1
SY2
that the peak voltage of the sync signal (V
) is lower than
sypk
Switching
Frequency
the OVP voltage (12 V) to avoid triggering OVP in normal
operation. It is typical to set V to be lower than OVP
sypk
Extended QR
Operation
voltage by 3–4 V. To detect the optimum time to turn on
MOSFET, the sync capacitor (CSY) should be determined
so that t is the same with t , as shown in Figure 29. The t
R
Q
R
Normal QR
Operation
90 kHz
and t are given as:
Q
VCO
2.6
RSY2
@ In ǒ
Ǔ
tR + RSY2 @ CSY
@
(eq. 3)
RSY1 ) RSY2
Ǹ
tQ + p @ Lm @ Ceo
(eq. 4)
(eq. 5)
@ ǒV
Ǔ
O ) VFO
Na
VCO
+
* VFa
Ns
Output Power
Figure 30. Extended Quasi−Resonant Operation
where:
L
is the primary side inductance of the
transformer,
m
In general, the QRC has a limitation in a wide load range
application, since the switching frequency increases as the
output load decreases, resulting in a severe switching loss in
the light load condition. To overcome this limitation, the
FSCQ series employs an extended quasi−resonant switching
operation. Figure 30 shows the mode change between
normal and extended quasi−resonant operations. In the
normal quasi−resonant operation, the FSCQ series enters
into the extended quasi−resonant operation when the
switching frequency exceeds 90 kHz as the load reduces. To
reduce the switching frequency, the MOSFET is turned on
when the drain voltage reaches the second minimum level,
N
N
V
V
C
is the number of turns for the output
winding,
s
is the number of turns for the V
a
CC
winding,
is the diode forward−voltage drop of
the output winding,
is the diode forward−voltage drop of
Fo
Fa
the V winding; and
CC
is the sum of the output capacitance
of the MOSFET and the external
eo
capacitor, C .
r
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13
FSCQ Series
as shown in Figure 31. Once the FSCQ series enters into the
Leading Edge Blanking (LEB)
extended quasi−resonant operation, the first sync signal is
ignored. After the first sync signal is applied, the sync
threshold levels are changed from 4.6 V and 2.6 V to 3 V and
1.8 V, respectively, and the MOSFET turn−on time is
synchronized to the second sync signal. The FSCQ series
returns to its normal quasi−resonant operation when the
switching frequency reaches 45 kHz as the load increases.
At the instant the internal SENSEFET is turned on, there
is usually a high current spike through the SENSEFET,
caused by the external resonant capacitor across the
MOSFET and secondary−side rectifier reverse recovery.
Excessive voltage across the R
resistor can lead to
sense
incorrect feedback operation in the current mode PWM
control. To counter this effect, the FSCQ series employs a
leading edge blanking (LEB) circuit. This circuit inhibits the
Vds
PWM comparator for a short time (t ) after the Sense FET
LEB
is turned on.
2VRO
VCC
Idelay
Vref
IFB
Vfb
VO
OSC
4
Vsyn
c
H11A817A
KA431
D1
D2
CB
2.5R
R
+
Vfb
Gate
Driver
*
4.6 V
2.6 V
−
3 V
1.8 V
OLP
Rsense
VSD
MOSFET Gate
Figure 32. Pulse Width Modulation (PWM) Circuit
ON
ON
Protection Circuits
Figure 31. Extended QR Operation Waveforms
The FSCQ series has several self−protective functions
such as overload protection (OLP), abnormal over−current
protection (AOCP), overvoltage protection (OVP), and
thermal shutdown (TSD). OLP and OVP are auto−restart
mode protections, while TSD and AOCP are latch mode
protections. Because these protection circuits are fully
integrated into the IC without external components, the
reliability can be improved without increasing cost.
− Auto− Restart Mode Protection: Once the fault condition
is detected, switching is terminated and the SENSEFET
Feedback Control
The FSCQ series employs current mode control, as shown
in Figure 32. An optocoupler (such as onsemi’s H11A817A)
and shunt regulator (such as onsemi’s KA431) are typically
used to implement the feedback network. Comparing the
feedback voltage with the voltage across the R
resistor,
sense
plus an offset voltage, makes it possible to control the
switching duty cycle. When the reference pin voltage of the
shunt regulator exceeds the internal reference voltage of 2.5
V, the opto−coupler LED current increases, pulling down the
feedback voltage and reducing the duty cycle. This typically
occurs when input voltage is increased or output load is
decreased.
remains off. This causes V to fall. When V falls to
CC
CC
the under voltage lockout (UVLO) stop voltage of 9 V, the
protection is reset and the FSCQ series consumes only
startup current (25 mA). Then, the V
capacitor is
CC
charged up, since the current supplied through the startup
resistor is larger than the current that the FPS consumes.
Pulse−by−Pulse Current Limit
When V reaches the start voltage of 15 V, the FSCQ
CC
Because current mode control is employed, the peak
current through the SENSEFET is limited by the inverting
series resumes its normal operation. If the fault condition
is not removed, the SENSEFET remains off and V
CC
input of the PWM comparator (V *) as shown in Figure 32.
drops to stop voltage again. In this manner, the
auto−restart can alternately enable and disable the
switching of the power SENSEFET until the fault
condition is eliminated (see Figure 33).
fb
The feedback current (I ) and internal resistors are
FB
designed so that the maximum cathode voltage of diode D
2
is about 2.8 V, which occurs when all IFB flows through the
internal resistors. Since D is blocked when the feedback
− Latch Mode Protection: Once this protection is triggered,
switching is terminated and the SENSEFET remains off
1
voltage (V ) exceeds 2.8 V, the maximum voltage of the
fb
cathode of D is clamped at this voltage, thus clamping V *.
until the AC power line is unplugged. Then, V
2
fb
CC
Therefore, the peak value of the current through the
SENSEFET is limited.
continues charging and discharging between 9 V and
15 V. The latch is reset only when V is discharged to
CC
6 V by unplugging the AC power line.
www.onsemi.com
14
FSCQ Series
Fault
Abnormal Over Current Protection (AOCP)
occurs
Fault
removed
Power
on
V
ds
When the secondary rectifier diodes or the transformer
pins are shorted, a steep current with extremely high di/dt
can flow through the SENSEFET during the LEB time.
Even though the FSCQ series has OLP (Overload
Protection), it is not enough to protect the FSCQ series in
that abnormal case, since severe current stress will be
imposed on the SENSEFET until the OLP triggers. The
FSCQ series has an internal AOCP (Abnormal
Over−Current Protection) circuit as shown in Figure 35.
When the gate turn−on signal is applied to the power
SENSEFET, the AOCP block is enabled and monitors the
current through the sensing resistor. The voltage across the
resistor is then compared with a preset AOCP level. If the
sensing resistor voltage is greater than the AOCP level, the
set signal is applied to the latch, resulting in the shutdown of
SMPS. This protection is implemented in the latch mode.
V
cc
15 V
9 V
ICC
IOP
ISTART
t
Normal Fault
Normal
operation
operation situation
Figure 33. Auto Restart Mode Protection
2.5R
OSC
Overload Protection (OLP)
Overload is defined as the load current exceeding its
normal level due to an unexpected abnormal event. In this
situation, the protection circuit should trigger to protect the
SMPS. However, even when the SMPS is in the normal
operation, the over load protection circuit can be triggered
during the load transition. To avoid this undesired operation,
the overload protection circuit is designed to trigger after a
specified time to determine whether it is a transient situation
or an overload situation. Because of the pulse−by−pulse
current limit capability, the maximum peak current through
the SENSEFET is limited, and therefore the maximum input
power is restricted with a given input voltage. If the output
consumes more than this maximum power, the output
voltage (Vo) decreases below the set voltage. This reduces
the current through the opto−coupler LED, which also
reduces the opto−coupler transistor current, thus increasing
S
R
Q
Q
PWM
Gate
Driver
R
LEB
R
+
2
AOCP
GND
−
VAOCP
Figure 35. AOCP Block
Over−Voltage Protection (OVP)
If the secondary side feedback circuit malfunctions or a
solder defect causes an open in the feedback path, the current
through the opto−coupler transistor becomes almost zero.
Then, V climbs up in a similar manner to the over load
fb
the feedback voltage (V ). If V exceeds 2.8 V, D is
fb
fb
1
situation, forcing the preset maximum current to be supplied
to the SMPS until the over load protection triggers. Because
more energy than required is provided to the output, the
output voltage may exceed the rated voltage before the
overload protection triggers, resulting in the breakdown of
the devices in the secondary side. In order to prevent this
situation, an over voltage protection (OVP) circuit is
employed. In general, the peak voltage of the sync signal is
proportional to the output voltage and the FSCQ series uses
a sync signal instead of directly monitoring the output
voltage. If the sync signal exceeds 12 V, an OVP is triggered
resulting in a shutdown of SMPS. In order to avoid
undesired triggering of OVP during normal operation, the
peak voltage of the sync signal should be designed to be
below 12 V. This protection is implemented in the auto
restart mode.
blocked, and the 5 mA current source starts to charge C
B
slowly up to V . In this condition, Vfb continues
CC
increasing until it reaches 7.5 V, then the switching operation
is terminated as shown in Figure 34. The delay for shutdown
is the time required to charge CB from 2.8 V to 7.5 V with
5 mA. In general, a 20~50 ms delay is typical for most
applications. OLP is implemented in auto restart mode.
V
FB
Overload Protection
7.5 V
2.8 V
t
12
= C *(7.5 − 2.8)/I
B delay
t1
t
t
Figure 34. Overload Protection
www.onsemi.com
15
FSCQ Series
Thermal Shutdown (TSD)
Figure 38 shows the burst mode operation waveforms.
When the picture ON signal is disabled, Q is turned off and
The SENSEFET and the control IC are built in one
package. This makes it easy for the control IC to detect
abnormal over temperature of the SENSEFET. When the
temperature exceeds approximately 150°C, the thermal
shutdown triggers. This protection is implemented in the
latch mode.
1
R and Dz are connected to the reference pin of KA431
3
stby
through D . Before Vo2 drops to V
, the voltage on the
1
o2
reference pin of KA431 is higher than 2.5 V, which increases
the current through the opto LED. This pulls down the
feedback voltage (V ) of FSCQ series and forces FSCQ
FB
series to stop switching. If the switching is disabled longer
than 1.4 ms, FSCQ series enters into burst operation and the
Soft Start
The FSCQ series has an internal soft−start circuit that
increases PWM comparator’s inverting input voltage
together with the SENSEFET current slowly after it starts
up. The typical soft start time is 20 ms. The pulse width to
the power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. Increasing the pulse width to the
power switching device also helps prevent transformer
saturation and reduces the stress on the secondary diode
during startup. For a fast build up of the output voltage, an
offset is introduced in the soft−start reference current.
operating current is reduced from I to 0.25 mA (IOB).
OP
Since there is no switching, V decreases until it reaches
o2
stby
stby
V
. As V reaches V
, the current through the opto
o2
o2
o2
LED decreases allowing the feedback voltage to rise. When
the feedback voltage reaches 0.4 V, FSCQ series resumes
switching with a predetermined peak drain current of 0.9 A.
After burst switching for 1.4 ms, FSCQ series stops
switching and checks the feedback voltage. If the feedback
voltage is below 0.4 V, FSCQ series stops switching until the
feedback voltage increases to 0.4 V. If the feedback voltage
is above 0.4 V, FSCQ series goes back to the normal
operation. The output voltage drop circuit can be
implemented alternatively, as shown in Figure 37. In the
circuit, the FSCQ series goes into burst mode, when picture
Burst Operation
To minimize the power consumption in the standby mode,
the FSCQ series employs burst operation. Once FSCQ series
enters burst mode, FSCQ series allows all output voltages
and effective switching frequency to be reduced. Figure 36
shows the typical feedback circuit for C−TV applications. In
normal operation, the picture on signal is applied and the
off signal is applied to Q . Then, V is determined by the
1
o2
Zener diode breakdown voltage. Assuming that the forward
voltage drop of opto LED is 1 V, the approximate value of
V
o2
in standby mode is given by:
transistor Q is turned on, which decouples R , D and D
from the feedback network. Therefore, only V
1
3
Z
1
is
STBY
VO2
+ VZ ) 1
(eq. 8)
O1
regulated by the feedback circuit in normal operation and
VO2
determined by R and R as:
1
2
R1 ) R2
NORM
Micom
Linear
Regulator
+ 2.5 @ ǒ Ǔ
VO1
(eq. 6)
R2
In standby mode, the picture ON signal is disabled and the
transistor Q is turned off, which couples R , D , and D to
RD
V
O1 (B+)
1
3
Z
1
R
bias
the reference pin of KA431. Then, V is determined by the
O2
Zener diode breakdown voltage. Assuming that the forward
R1
CF
RF
voltage drop of D is 0.7 V, V in standby mode is
1
O2
approximately given by:
C
STBY
R
VO2
+ VZ ) 0.7 ) 2.5
(eq. 7)
KA431
A
R2
Dz
VO2
Micom
Linear
Regulator
VO1 (B+)
Q
1
Picture OFF
RD
Dz
R
bias
R3
R1
D1
Figure 37. Feedback Circuit to Drop Output
Voltage in Standby Mode
CF RF
Q1
Picture ON
C
A
R
KA431
R2
Figure 36. Typical Feedback Circuit to Drop
Output Voltage in Standby Mode
www.onsemi.com
16
FSCQ Series
(a)
(b)
(c)
norm
V
o2
stby
V
o2
VFB
0.4 V
Iop
IOP
IOB
Vds
Picture
On
Picture
On
Picture Off
Burst Mode
0.4 V
0.3 V
0.4 V
0.4 V
VFB
V
ds
1.4 ms
1.4 ms
0.9 A
0.9 A
I
ds
(a) Mode Change to Burst Operation
(b) Burst Operation
(c) Mode Change to Normal Operation
Figure 38. Burst Operation Waveforms
www.onsemi.com
17
FSCQ Series
FSCQ0765RT Typical Application Circuit
FSCQ0765RT TYPICAL APPLICATION CIRCUIT
Application
Output Power
Input Voltage
Output Voltage (Max. Current)
12 V (1 A)
C−TV
83 W
Universal Input
(90−270 V
)
ac
18 V (0.5 A)
125 V (0.4 A)
24 V (0.5 A)
Features
• Enhanced System Reliability Through Various
Protection Functions
• Internal Soft−Start (20 ms)
• High Efficiency (>83% at 90 V Input)
ac
• Wider Load Range through the Extended
Quasi−Resonant Operation
Key Design Notes
• 24 V Output Designed to Drop to 8 V in Standby Mode
• Low Standby Mode Power Consumption (<1 W)
• Low Component Count
T1
EER3540
D205
EGP20D
12 V, 1.0 A
18 V, 0.5 A
125 V,, 0.4 A
24 V, 0.5 A
10
11
RT101
5D−9
1
3
C204
1000uF
35V
C210
470pF
1kV
C102
220uF
400V
D204
EGP20D
BEAD101
R 102
150kΩ
0. 25W
R 101
100kΩ
4
13
12
0..25W
C205
1000uF
35V
C107
1nF
1kV
BD101
C209
470pF
1k V
R106 C104
1.5kΩ 10uF
1W
D102
1N4937
D104
1
50V
UF4007
Dra in
D202
EGP20J
SYNC
ZD101
18V
1W
3
Vcc
5
IC101
FSCQ0965RT
6
R 104
1.5kΩ
0.25W
R 103
5.1Ω
0.25W
D103
14
15
D101
1N4937
L201
BEAD
C202
47uF
160V
GND FB
C201
100uF
160V
1N4148
C207
470pF
1k V
2
4
16
C 105
3.9nF
50V
C103
10uF
50V
R105
470Ω
0.25W
C106
47nF
50V
D203
EGP20D
17
18
7
C203
1000uF
35V
C208
470pF
1k V
LF101
VR2201
30kΩ
R205
220kΩ
0. 25W
R201
1kΩ
0. 25W
OPTO101
FOD817A
Normal
ZD202
5.1V
0. 5W
R202
1kΩ
C101
330nF
275VAC
0. 25W
R208
1kΩ
0. 25W
SW201
Standby
R 207
5.1kΩ
0.25W
FUSE
250V
2.0A
ZD201
C206
22nF
50V
R203
39kΩ
0. 25W
D201
Q 202
R 206
5.1kΩ
0. 25W
KSC945
C301
2. 2nF
R 204
4.7kΩ
0. 25W
Q201
K A 431
Figure 39. FSCQ0765RT Typical Application Circuit Schematic
www.onsemi.com
18
FSCQ Series
EER3540
1
2
3
18
17
16
15
14
13
12
11
10
Np1
N24V
N
a
N
18V
Np2
N
125V/2
N125V/2
4
5
6
7
8
9
Np2
N
125V/2
N12V
N24V
N12V
N
125V/2
Na
Np1
N18V
Figure 40. Transformer Schematic Diagram
WINDING SPECIFICATION
No
Pin (s " f)
1−3
Wire
Turns
Winding Method
Center Winding
N
0.5φ x 1
0.5φ x 1
0.4φ x 2
0.5φ x 2
0.5φ x 1
0.5φ x 1
0.4φ x 2
0.3φ x 1
32
32
13
7
p1
N
/2
16−15
18−17
12−13
3−4
125V
N
N
24V
12V
N
32
32
10
20
p2
N
/2
15−14
11−10
7−6
125V
N
18V
N
a
ELECTRICAL CHARACTERISTICS
Pin
1−3
1−3
Specification
515 mH 5%
10 mH Max.
Remarks
Inductance
1 kHz, 1 V
nd
Leakage Inductance
2
all short
Core & Bobbin
• Core: EER3540
• Bobbin: EER3540
2
• Ae: 107 mm
www.onsemi.com
19
FSCQ Series
BILL OF MATERIALS
BILL OF MATERIALS (continued)
Part
Value
Note
Part
Value
Note
C207
C208
C209
C210
C301
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
2.2 nF / 1 kV
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
AC Ceramic Capacitor
Fuse
250 V / 2 A
NTC
FUSE
RT101
5D−9
Resistor
100 kW
Inductor
R101
R102
R103
R104
R105
R106
R107
R201
R202
R203
R204
R205
R206
R207
R208
VR201
0.25 W
0.25 W
0.25 W
0.25 W
0.25 W
1 W
BEAD101
BEAD201
BEAD
150 kW
5.1 W
5 mH
3 A
Diode
1.5 kW
470 W
1.5 kW
Open
D101
D102
D103
D104
D105
ZD101
ZD102
ZD201
D201
D202
D203
D204
D205
1N4937
1N4937
1N4148
Short
1 A, 600 V
1 A, 600 V
0.15 A, 50 V
1 kW
0.25 W
0.25 W
Open
1 kW
1N4746
Open
18 V, 1 W
39 kW
4.7 kW
220 kW
5.1 kW
5.1 kW
1 kW
0.25 W
0.25 W, 1%
0.25 W, 1%
0.25 W
1N5231
1N4148
5.1 V, 0.5 W
0.15 A, 50 V
2 A, 600 V
2 A, 200 V
2 A, 200 V
2 A, 200 V
EGP20J
EGP20D
EGP20D
EGP20D
0.25 W
0.25 W
30 kW
Capacitor
330 nF / 275 V
Bridge Diode
GSIB660
Line Filter
C101
C102
C103
C104
C105
C106
C107
C108
C201
C202
C203
C204
C205
C206
AC
BD101
LF101
T101
6 A, 600 V
14 mH
220 mF / 400 V
10 mF / 50 V
10 mF / 50 V
3.9 nF / 50 V
47 nF / 50 V
680 pF / 1 kV
Open
Box Capacitor
Electrolytic
Electrolytic
Transformer
EER3540
Switch
ON/OFF
Electrolytic
Film Capacitor
Film Capacitor
SW201
For MCU Signal
TO−220F−5L
TO−92
IC
FSCQ0765RT
100 mF / 160 V
47 mF / 160 V
1000 mF / 35 V
1000 mF / 35 V
1000 mF / 35 V
22 nF / 50 V
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Film Capacitor
IC101
OPT101
Q201
FOD817A
KA431LZ
KSC945
Q202
www.onsemi.com
20
FSCQ Series
FSCQ0965RT Typical Application Circuit
FSCQ0965RT TYPICAL APPLICATION CIRCUIT
Application
Output Power
Input Voltage
Output Voltage (Max. Current)
12 V (0.5 A)
C−TV
102 W
Universal Input
(90−270 V
)
ac
18 V (0.5 A)
125 V (0.5 A)
24 V (1.0 A)
Features
• Enhanced System Reliability Through Various
Protection Functions
• Internal Soft−Start (20 ms)
• High Efficiency (>83% at 90 V Input)
ac
• Wider Load Range through the Extended
Quasi−Resonant Operation
Key Design Notes
• 24 V Output Designed to Drop to 8 V in Standby Mode
• Low Standby Mode Power Consumption (<1 W)
• Low Component Count
T1
EER3540
D205
EGP20D
12 V, 0.5 A
18 V, 0.5 A
125 V, 0.5 A
24 V, 1.0 A
10
11
RT101
5D−9
1
3
C204
1000uF
35V
C210
470pF
1kV
C102
220uF
400V
D204
EGP20D
BEAD101
R102
150kΩ
0. 25W
R101
100kΩ
0. 25W
4
13
12
C205
1000uF
35V
C107
1nF
1kV
BD101
C209
470pF
1kV
R106 C104
1.5kΩ 10uF
1W
D102
1N4937
D104
UF4007
1
50V
Dra in
D202
EGP30J
SYNC
ZD101
18V
1W
3
Vcc
5
IC101
FSCQ0965RT
6
R104
1.5kΩ
0. 25W
R103
5.1Ω
D103
14
15
D101
1N 4937
L201
BEAD
C202
47uF
160V
GND FB
C201
100uF
160V
1N4148
0. 25W
C207
470pF
1kV
2
4
16
C105
3. 9nF
50V
C103
10uF
50V
R105
470Ω
0.25W
C106
47nF
50V
D203
EGP30D
17
18
7
C203
1000uF
35V
C208
470pF
1kV
LF101
VR201
30kΩ
R205
220kΩ
0. 25W
R201
1kΩ
0. 25W
OPTO101
FOD817A
Normal
ZD202
5.1V
0. 5W
R202
1kΩ
C101
330nF
275VAC
0. 25W
R208
1kΩ
0. 25W
SW201
Standby
R207
5.1kΩ
0. 25W
FUSE
250V
3.0A
ZD201
C206
22nF
50V
R203
39kΩ
0. 25W
D201
Q202
KSC945
R 206
C301
5.1kΩ
0. 25W
2. 2nF
R204
4.7kΩ
0. 25W
Q201
KA431
Figure 41. FSCQ0965RT Typical Application Circuit Schematic
www.onsemi.com
21
FSCQ Series
EER3540
1
2
3
18
17
16
15
14
13
12
11
10
Np1
N24V
N
a
N
18V
Np2
N
125V/2
N
125V/2
4
5
6
7
8
9
Np2
N
125V/2
N12V
N24V
N12V
N
125V/2
Na
Np1
N18V
Figure 42. Transformer Schematic Diagram
WINDING SPECIFICATION
No
Pin (s " f)
1−3
Wire
Turns
Winding Method
Center Winding
N
0.5φ x 1
0.5φ x 1
0.4φ x 2
0.5φ x 2
0.5φ x 1
0.5φ x 1
0.4φ x 2
0.3φ x 1
32
32
13
7
p1
N
/2
16−15
18−17
12−13
3−4
125V
N
N
24V
12V
N
32
32
10
20
p2
N
/2
15−14
11−10
7−6
125V
N
18V
N
a
ELECTRICAL CHARACTERISTICS
Pin
1−3
1−3
Specification
410 mH 5%
10 mH Max.
Remarks
Inductance
1 kHz, 1 V
nd
Leakage Inductance
2
all short
Core & Bobbin
• Core: EER3540
• Bobbin: EER3540
2
• Ae: 107 mm
www.onsemi.com
22
FSCQ Series
BILL OF MATERIALS
BILL OF MATERIALS (continued)
Part
Value
Note
Part
Value
Note
C207
C208
C209
C210
C301
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
2.2 nF / 1 kV
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
AC Ceramic Capacitor
Fuse
250 V / 3 A
NTC
FUSE
RT101
5D−9
Resistor
100 kW
Inductor
R101
R102
R103
R104
R105
R106
R107
R201
R202
R203
R204
R205
R206
R207
R208
VR201
0.25 W
0.25 W
0.25 W
0.25 W
0.25 W
1 W
BEAD101
BEAD201
BEAD
150 kW
5.1 W
5 mH
3 A
Diode
1.5 kW
470 W
1.5 kW
Open
D101
D102
D103
D104
D105
ZD101
ZD102
ZD201
D201
D202
D203
D204
D205
1N4937
1N4937
1N4148
Short
1 A, 600 V
1 A, 600 V
0.15 A, 50 V
1 kW
0.25 W
0.25 W
Open
1 kW
1N4746
Open
18 V, 1 W
39 kW
4.7 kW
220 kW
5.1 kW
5.1 kW
1 kW
0.25 W
0.25 W, 1%
0.25 W, 1%
0.25 W
1N5231
1N4148
5.1 V, 0.5 W
0.15 A, 50 V
3 A, 600 V
3 A, 200 V
2 A, 200 V
2 A, 200 V
EGP30J
EGP30D
EGP20D
EGP20D
0.25 W
0.25 W
30 kW
Capacitor
330 nF / 275 V
Bridge Diode
GSIB660
Line Filter
C101
C102
C103
C104
C105
C106
C107
C108
C201
C202
C203
C204
C205
C206
AC
BD101
LF101
T101
6 A, 600 V
14 mH
220 mF / 400 V
10 mF / 50 V
10 mF / 50 V
3.9 nF / 50 V
47 nF / 50 V
1 nF / 1 kV
Box Capacitor
Electrolytic
Electrolytic
Transformer
EER3540
Switch
ON/OFF
Electrolytic
Film Capacitor
Film Capacitor
SW201
For MCU Signal
TO−220F−5L
TO−92
Open
IC
FSCQ0965RT
100 mF / 160 V
47 mF / 160 V
1000 mF / 35 V
1000 mF / 35 V
1000 mF / 35 V
22 nF / 50 V
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Film Capacitor
IC101
OPT101
Q201
FOD817A
KA431LZ
KSC945
Q202
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23
FSCQ Series
FSCQ1265RT Typical Application Circuit
FSCQ1265RT TYPICAL APPLICATION CIRCUIT
Application
Output Power
Input Voltage
Output Voltage (Max. Current)
8.5 V (0.5 A)
C−TV
132 W
Universal Input
(90−270 V
)
ac
15 V (0.5 A)
140 V (0.6 A)
24 V (1.5 A)
Features
• Enhanced System Reliability Through Various
Protection Functions
• Internal Soft−Start (20 ms)
• High Efficiency (>83% at 90 V Input)
ac
• Wider Load Range through the Extended
Quasi−Resonant Operation
Key Design Notes
• 24 V Output Designed to Drop to 8 V in Standby Mode
• Low Standby Mode Power Consumption (<1 W)
• Low Component Count
T1
EER4042
D205
EGP20D
15 V, 0.5 A
8. 5 V, 0.5 A
140 V, 0.6 A
24 V, 1.5 A
10
11
RT101
5D−11
1
3
C204
1000uF
35V
C 210
470pF
1k V
C102
330uF
400V
D204
EGP20D
BEAD101
R102
150kΩ
0. 25W
4
13
12
R101
100kΩ
0. 25W
C 205
1000uF
35V
C107
1nF
1kV
BD101
C 209
470pF
1k V
R106 C 104
1kΩ 10uF
1W
D105
1N4937
1
50V
Dra in
D202
EGP30J
S Y N C
3
V c c
5
IC 101
F S C Q 1265R T
ZD102
18V
1W
6
R104
1.5kΩ
0. 25W
R103
5.1Ω
0. 25W
D106
14
15
D103
1N 4937
L 202
BEAD
C202
68uF
160V
G N D F B
C 201
150uF
160V
1N 4148
C 207
470pF
1k V
2
4
16
C105
3. 3nF
50V
C103
10μF
50V
R105
470Ω
0. 25W
C106
47nF
50V
D203
EGP30D
17
18
7
C 203
1000uF
35V
C 208
470pF
1k V
LF101
VR201
30kΩ
R201
1kΩ
0. 25W
OPTO101
FOD817A
ZD201
5. 1V
0. 5W
R 208
1kΩ
0. 25W
R202
1kΩ
0. 25W
R203
39kΩ
0. 25W
C101
330nF
275VAC
C206
150nF
50V
R205
240kΩ
0. 25W 1N4148
D201
SW201
R207
FUSE
5.1kΩ
250V
5.0A
0. 25W
C301
3. 3nF
Q202
KSC945
Q201
KA431
LZ
R204
4.7kΩ
0. 25W
R206
10kΩ
0. 25W
Figure 43. FSCQ1265RT Typical Application Circuit Schematic
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24
FSCQ Series
EER4042
1
2
3
18
17
16
15
14
13
12
11
10
Np1
N24V
N
a
N
15V
N8.5V
N140V/2
NP2
Np2
N
140V/2
4
5
6
7
8
9
N
140V/2
N140V/2
NP1
N8.5V
Na
N24V
N15V
Figure 44. Transformer Schematic Diagram
WINDING SPECIFICATION
No
Pin (s " f)
18−17
Wire
Turns
Winding Method
Space Winding
Center Winding
Center Winding
Center Winding
Center Winding
Space Winding
Space Winding
Space Winding
N
0.65φ x 2
8
24
N
1−3
16−15
3−4
0.1φ x 10 x 2
0.1φ x 10 x 2
0.1φ x 10 x 2
0.1φ x 10 x 2
0.6φ x 1
20
23
20
22
3
P1
N
N
/2
/2
140V
N
p2
140V
15−14
12−13
11−10
7−6
N
8.5V
N
0.6φ x 1
6
15V
N
0.3φ x 1
13
a
ELECTRICAL CHARACTERISTICS
Pin
1−4
1−4
Specification
315 mH 5%
10 mH Max.
Remarks
Inductance
1 kHz, 1 V
nd
Leakage Inductance
2
all short
Core & Bobbin
• Core: EER4042
• Bobbin: EER4042 (18 Pin)
2
• Ae: 153 mm
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25
FSCQ Series
BILL OF MATERIALS
BILL OF MATERIALS (continued)
Part
Value
Note
Part
Value
Note
C207
C208
C209
C210
C301
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
3.3 nF / 1 kV
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
AC Ceramic Capacitor
Fuse
250 V / 5 A
NTC
FUSE
RT101
5D−11
Resistor
100 kW
Inductor
R101
R102
R103
R104
R105
R106
R107
R201
R202
R203
R204
R205
R206
R207
R208
VR201
0.25 W
0.25 W
0.25 W
0.25 W
0.25 W
1 W
BEAD101
BEAD201
BEAD
150 kW
5.1 W
1.5 kW
470 W
1 kW
5 mH
3 A
Diode
D101
D102
D103
D104
D105
ZD101
ZD102
ZD201
D201
D202
D203
D204
D205
1N4937
1N4937
1N4148
Short
1 A, 600 V
1 A, 600 V
0.15 A, 50 V
Open
1 kW
0.25 W
0.25 W
Open
1 kW
1N4746
Open
18 V, 1 W
39 kW
4.7 kW
240 kW
10 kW
5.1 kW
1 kW
0.25 W
0.25 W, 1%
0.25 W, 1%
0.25 W
1N5231
1N4148
5.1 V, 0.5 W
0.15 A, 50 V
3 A, 600 V
3 A, 200 V
2 A, 200 V
2 A, 200 V
EGP30J
EGP30D
EGP20D
EGP20D
0.25 W
0.25 W
30 kW
Capacitor
330 nF / 275 V
Bridge Diode
GSIB660
Line Filter
C101
C102
C103
C104
C105
C106
C107
C108
C201
C202
C203
C204
C205
C206
AC
BD101
LF101
T101
6 A, 600 V
14 mH
330 mF / 400 V
10 mF / 50 V
10 mF / 50 V
3.3 nF / 50 V
47 nF / 50 V
1 nF / 1 kV
Box Capacitor
Electrolytic
Electrolytic
Transformer
EER4042
Switch
ON/OFF
Electrolytic
Film Capacitor
Film Capacitor
SW201
For MCU Signal
TO−220F−5L
TO−92
Open
IC
FSCQ1265RT
100 mF / 160 V
68 mF / 160 V
1000 mF / 35 V
1000 mF / 35 V
1000 mF / 35 V
150 nF / 50 V
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Film Capacitor
IC101
OPT101
Q201
FOD817A
KA431LZ
KSC945
Q202
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26
FSCQ Series
FSCQ1565RT Typical Application Circuit
FSCQ1565RT TYPICAL APPLICATION CIRCUIT
Application
Output Power
Input Voltage
Output Voltage (Max. Current)
8.5 V (0.5 A)
C−TV
160 W
Universal Input
(90−270 V
)
ac
15 V (0.5 A)
140 V (0.8 A)
24 V (1.5 A)
Features
• Enhanced System Reliability Through Various
Protection Functions
• Internal Soft−Start (20 ms)
• High Efficiency (>83% at 90 V Input)
ac
• Wider Load Range through the Extended
Quasi−Resonant Operation
Key Design Notes
• 24 V Output Designed to Drop to 8 V in Standby Mode
• Low Standby Mode Power Consumption (<1 W)
• Low Component Count
T1
EER4245
D205
EGP20D
15 V, 0.5 A
8. 5 V, 0.5 A
140 V, 0.8 A
24 V, 1.5 A
10
11
RT101
6D−22
1
3
C204
1000μF
35V
C210
470pF
1kV
C102
470μF
400V
D204
EGP20D
BEAD101
R102
150kΩ
0. 25W
4
13
12
R101
100kΩ
0. 25W
C205
1000μF
35V
C107
1nF
1V
BD101
C209
470pF
1kV
R106 C104
1kΩ 10uF
1W
D105
1N4937
1
50V
Dra in
D202
EGP30J
S Y N C
3
V c c
5
IC 101
F S C Q 1565R T
ZD102
18V
1W
6
R104
1.5kΩ
0. 25W
R103
5.1Ω
D106
14
15
D103
1N4937
L202
BEAD
C202
68μF
160V
G N D F B
C201
220μF
160V
1N 4148
0. 25W
C207
470pF
1kV
2
4
16
C105
2. 7nF
50V
C103
10uF
50V
R105
470Ω
0. 25W
C106
47nF
50V
D203
EGP30D
17
18
7
C203
1000uF
35V
C208
470pF
1kV
LF101
VR201
30kΩ
R201
1kΩ
0. 25W
OPTO101
FOD817A
ZD201
5. 1V
0. 5W
R208
1kΩ
0. 25W
R202
1kΩ
0. 25W
R203
39kΩ
0. 25W
C101
330nF
275VAC
C206
150nF
50V
R205
240kΩ
D201
0. 25W 1N4148
SW201
R207
FUSE
5.1kΩ
250V
5.0A
0. 25W
C301
3. 3nF
Q202
KSC945
Q201
KA431
LZ
R204
4.7kΩ
0. 25W
R206
10kΩ
0. 25W
Figure 45. FSCQ1565RT Typical Application Circuit Schematic
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27
FSCQ Series
EER4245
1
2
3
18
17
16
15
14
13
12
11
10
Np1
N24V
N
a
N
15V
N8.5V
N140V/2
NP2
Np2
N
140V/2
4
5
6
7
8
9
N
140V/2
N140V/2
NP1
N8.5V
Na
N24V
N15V
Figure 46. Transformer Schematic Diagram
WINDING SPECIFICATION
No
Pin (s " f)
18−17
Wire
Turns
Winding Method
Space Winding
Center Winding
Center Winding
Center Winding
Center Winding
Space Winding
Space Winding
Space Winding
N
0.65φ x 2
5
13
15
13
14
2
24V
N
1−3
16−15
3−4
0.08φ x 20 x 2
0.08φ x 20 x 2
0.08φ x 20 x 2
0.08φ x 20 x 2
0.6φ x 1
P1
N
/2
/2
140V
N
p2
140V
N
15−14
12−13
11−10
7−6
N
8.5V
N
0.6φ x 1
3
15V
N
0.3φ x 1
8
a
ELECTRICAL CHARACTERISTICS
Pin
1−4
1−4
Specification
220 mH 5%
10 mH Max.
Remarks
Inductance
1 kHz, 1 V
nd
Leakage Inductance
2
all short
Core & Bobbin
• Core: EER4245
• Bobbin: EER4245 (18 Pin)
2
• Ae: 201.8 mm
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28
FSCQ Series
BILL OF MATERIALS
BILL OF MATERIALS (continued)
Part
Value
Note
Part
Value
Note
C207
C208
C209
C210
C301
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
470 pF / 1 kV
3.3 nF / 1 kV
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
Ceramic Capacitor
AC Ceramic Capacitor
Fuse
250 V / 5 A
NTC
FUSE
RT101
6D−22
Resistor
100 kW
Inductor
R101
R102
R103
R104
R105
R106
R107
R201
R202
R203
R204
R205
R206
R207
R208
VR201
0.25 W
0.25 W
0.25 W
0.25 W
0.25 W
1 W
BEAD101
BEAD201
BEAD
150 kW
5.1 W
1.5 kW
470 W
1.5 kW
Open
1 kW
5 mH
3 A
Diode
D101
D102
D103
D104
D105
ZD101
ZD102
ZD201
D201
D202
D203
D204
D205
1N4937
1N4937
1N4148
Short
1 A, 600 V
1 A, 600 V
0.15 A, 50 V
0.25 W
0.25 W
Open
1 kW
1N4746
Open
18 V, 1 W
39 kW
4.7 kW
240 kW
10 kW
5.1 kW
1 kW
0.25 W
0.25 W, 1%
0.25 W, 1%
0.25 W
1N5231
1N4148
5.1 V, 0.5 W
0.15 A, 50 V
3 A, 600 V
3 A, 200 V
2 A, 200 V
2 A, 200 V
EGP30J
EGP30D
EGP20D
EGP20D
0.25 W
0.25 W
30 kW
Capacitor
330 nF / 275 V
Bridge Diode
GSIB660
Line Filter
C101
C102
C103
C104
C105
C106
C107
C108
C201
C202
C203
C204
C205
C206
AC
BD101
LF101
T101
6 A, 600 V
14 mH
470 mF / 400 V
10 mF / 50 V
10 mF / 50 V
2.7 nF / 50 V
47 nF / 50 V
1 nF / 1 kV
Box Capacitor
Electrolytic
Electrolytic
Transformer
EER4245
Switch
ON/OFF
Electrolytic
Film Capacitor
Film Capacitor
SW201
For MCU Signal
TO−220F−5L
TO−92
Open
IC
FSCQ1565RT
220 mF / 160 V
68 mF / 160 V
1000 mF / 35 V
1000 mF / 35 V
1000 mF / 35 V
150 nF / 50 V
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Film Capacitor
IC101
OPT101
Q201
FOD817A
KA431LZ
KSC945
Q202
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29
FSCQ Series
PCB Layout
Figure 47. Top View
Figure 48. Bottom View
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30
FSCQ Series
ORDERING INFORMATION TABLE
Part Number
Package
TO−220F−5L (Forming)
Marking Code
CQ0765RT
CQ0965RT
CQ1265RT
CQ1565RT
BV
(V)
R
Max. (W)
DSON
DSS
FSCQ0765RTYDTU
FSCQ0965RTYDTU
FSCQ1265RTYDTU
FSCQ1565RTYDTU
650
1.6
1.2
0.9
0.7
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countries.
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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31
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220− FULLPAK 5LD LF
CASE 340BH
ISSUE A
DATE 22 JUL 2021
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DOCUMENT NUMBER:
DESCRIPTION:
98AON13841G
TO−220 FULLPAK 5LD LF
PAGE 1 OF 1
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