FSFR2100_技术文档

DATA SHEET

www.onsemi.cn

᫒✈ꢀꢁᩅᛠᔏᨼᕂꢂŔꢃ╧ꢄꢅ

FSFR2100

ᛄ៮

SIP9 26x10.5

CASE 127EM

FSFR2100 ᠏ꢀႆꢁᏰŔꢀ⁰რꢀ，ꢁꢂꢀᜨ╧Ԫᩅᛠᔏᨼᕂ

ࡈ

૜ᚎᙱ。FSFR2100ꢃ

ߋ

Ϸ͗ᣩᥤლ

׏

∰૜ꢀ

ڡ

ឺŔԪᩅᛠᔏᨼ

ᕂ

ࡈ

ᐠ⇐Ŕ⛰ϧ⑙ሇ，

׏

ÅِӶᚎᙱ、ᖰꢀ⛿ѻ、᜙᪫ሇ

்。FSFR2100 ෦ѿ╧ MOSFETꢃ⛾ᇋ᫯ቂ૭५ĳlᥡ

ٱ

、ꢀƇ

᧥ᥡ╁҈ꢀᢿ、

ގ

̾ꢀἡᖇЖŔᔏั

ࡈ

、⍡╧℠Жꢀᢿ、ᨿ؏

҈٬ͥਾ

ƽᒄѿ்᝔

ר

ई⛰ᡇ。ꢀƇ᧥ᥡ╁҈ꢀᢿ͗ᣩ͑ᰁ

ࡊ

ૐὨℴ்ѻ，᫪᪗ԳᡚŔᑷ

ࡊ

்ѻ̾ƽ᪠ጜԃൺ。MOSFET Ŕ

ᇋ᫯ቂ૭ĳlᥡ

׏ٱ

Åᖰꢀტဘ࿅ļ᥁Ö⛻Ŕ

׏

∰ሇ，

׬

៖֨

்෦֭

ױ

ቂ૭Ŕᅑ

ڭ

ℝೃᣠĮ。ş✈⇆ꢀիრꢀ (ZVS) ᑠᤏ

׏

᠞༧ℝĮრꢀᔿ૧ၖᖰꢀᜨ╧。ZVSꢃ᪨

׏

᠞༧ℝĮრꢀ

ࡊ

ૐ，

̡ᚈş✈෯บෘŔꢀΑၒᑐ (EMI) ⃄Ể

ࡈ

。

MARKING DIAGRAM

$Y&Z &3&K

FSFR2100

$Y

&Z

&3

&K

= Logo

FSFR2100

׏

✈n

פ

ҝᛠᔏᨼᕂ

ࡈ

ᒳᐱ，ୢ：ꢄତᛠᔏ、ၖତ

ᛠᔏÅ֪ LLC ᛠᔏᨼᕂ

ࡈ

。

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digits Lot Run Traceability Code

= Device Code

⑙ሇ

FSFR2100

•ꢅꢂԪᩅᛠᔏᨼᕂ

ࡈ

ᒳᐱᖰŻf 50% ՀՊᶴŔָ⍡ᖇЖ

•ꢅ᫪᪗⇆ꢀիრꢀ (ZVS) ൾ▐ꢀᜨ╧

®

•ꢅ͗ᣩᇋ᫯ቂ૭५ĳlᥡ

ٱ

Ŕͥ᮸ SUPERFET (t = 120 ns)

rr

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

•ꢅꢂ MOSFET øӶŔ

ࣚ

ൺᵛԚ៖⃄ (350 ns)

•ꢅ࿅ļ⍡╧ᣠꢀ

׏

᪎ 300 kHz

•ꢅईᩋ៯ᩍ᥁Ö⛻✈n⍡╧℠Ж (

׏

০ӛ) Ŕ௙Βᣃᢓ

•ꢅş✈ᖇЖჵ௪Ŕ᪬ӛრ/ꢀᖇЖ

•ꢅƽᒄѿ்ꢃ᪗իƽᒄ (OVP)、᪗ᩍƽᒄꢃ(OLP)、᪗ἡƽᒄꢃ(OCP)、

ტဘ᪗ἡƽᒄ (AOCP)、ͥ᮸⋍ꢀឍ (TSD)

ꢆ✈

•ꢅؙҋര (PDP) ⛾ᾒᡖ (LCD) ꢀᒖ

•ꢅ

א

ჯᙱ

٧ᤚ

⛾ᣭҁ

ࡈ

•ꢅ᫒ᰝ

ࡈ

•ꢅ᫪ǁꢀ⁰

•ꢅ⋃

ڭ

ꢀ⁰

ǈꢅ᠔⁰

•ꢅAN−4151 — ş✈ꢃFSFR2100 ѿ╧რꢀŔԪᩅꢃLLC ᛠᔏᨼᕂ

ࡈ

ᚎ

ᙱ

•ꢅᚔἫᥟ：FEBFSFR2100_D015v1

1

Publication Order Number:

March, 2022 − Rev. 2

FSFR2100CN/D

FSFR2100

ᙲ៽ꢇ቏

ꢎᝃ⋍␧Ŕ ᣠꢏᩣꢐꢃ╧

ꢍꢎᝃ⋍␧Ŕᣠꢏᩣꢐꢃ╧

(V = 350~400 V) (ꢀꢁ 1, 2)

IN

ꢂꢈ০ꢉ

ꢊ᎕

ꢋꢌণꢀ

R

Shipping

IN

DS(ON_MAX)

FSFR2100

9−SIP

−40 ꢂ +130°C

0.38 W

200 W

450 W

475 Units /

Tube

1. ꢃꢄꢅꢆꢀꢇꢈꢉꢁꢂꢊ。

2. 50°C ꢋꢌꢄꢍꢎꢏꢐꢑꢒꢓꢃꢔꢇꢈꢕꢖꢗꢘꢂꢊ。

ꢆ✈ꢁᢿꢑ

ꢑ 1. ꢒꢓꢆ✈ꢁᢿ (LLC ᛠᔏꢁᩅᨼᕂꢂ)

2

FSFR2100

ᨦꢑ

s

1.5m

ꢑ 2. ꢔ᮸ᨦꢑ

3

FSFR2100

ჵ௪ꢕꢖ

1

V_DL

2 3 4 5 6 7 8

R_TSG LVcc

9

10

V_CTR

CON CS PG

HVcc

ꢑ 3. ꢊ᎕ꢑ

ჵ௪ꢗꢘ

ჵ௪ꢉ

ꢙӀ

VDL

CON

ᛄ៮

1

2

ꢙꢚꢛƇMOSFET ꢔꢜꢝ，᫪ဘ᪮ᖅꢂꢛիǄἡꢉͅ。

ᚵჵ௪✈n؏✈/

ё✈٬

ƽᒄ。ᄳᵄჵ௪ꢔꢞիꢛnꢄ0.6 V ꢎ，෦ş்ꢄICꢄᚭļ。ᄳᵄჵ௪ꢔꢞիℝꢂĮn0.4 Vꢄꢎ，

ꢅꢆMOSFET ꢔ᧥ꢝ╁҈ǁ

ח

෦ё✈。ᄳᵄჵ௪ꢔꢞի੾ꢈАꢄ5 VꢄÅ⛺ꢎ，෦ᒶֱƽᒄ。

3

4

R

ᚵჵ௪✈n০ӛꢏ͓⍡ꢊ。⛰೼ऐ，⇐ᑑ̩૶᪮ᖅАᚵჵ௪，✈᥅ᛓ൒ꢉꢁꢞիꢔꢏ͓⍡ꢊ。

ᵄჵ௪᪠ἫἡটĮƇMOSFET ꢔꢞἡ。͘५ऐ，៯ꢞի፻ឝҀАᚵჵ௪。

ᚵჵ௪ꢇᖇꢀऐ。

T

CS

SG

PG

5

6

ᚵჵ௪ꢇꢞ⁰ऐ。ᚵჵ௪᪮ᖅАĮƇMOSFET ꢔ⁰ꢝ。

ᚵჵ௪ꢇᖇꢀIC ꢔŻꢞꢞի。

7

LV

CC

8

NC

ៀ᪮ᖅ。

9

HV

ꢙꢚꢛƇ᧥ꢝ╁҈ꢞᢿ IC ꢔꢞ⁰ꢞի。

CC

10

V

CTR

ꢙꢚĮƇMOSFET ꢔꢜꢝ。͘५ऐ，ָի

ࡈ

᪮ᖅАᚵჵ௪。

4

FSFR2100

ভꢚᣠꢏ⍭ꢗꢛ(T = 25°C ，ℴ∮

׆

ᣩᛄ៮。)

A

׶

ꢉ

ꢜᝐ

-PG)

ᣠꢝꢛ ᣠꢏꢛ

Եĭ

V

DS

ꢇꢈꢜꢝꢂ⁰ꢝꢞի(V -V

٬

V

CTR

600

−0.3

−5.0

−0.3

−

DL CTR

LV

CC

ĮƇꢞ⁰ꢞի

25.0

625.0

V

ꢂ

HV

V

ꢛƇV ჵ௪ꢂĮƇꢜꢝꢞի

V

CC

CTR

CC

HV

ꢛƇ὎҈ꢞ⁰ꢞի

V

CC

V

CON

ᖇꢀჵ௪ꢉͅꢞի

LV

CC

V

CS

ꢞἡዿἫ (CS) ჵ௪ꢉͅꢞի

1.0

V

RT

R

T

ჵ௪ꢉͅꢞի

5.0

50

V

dV

CTR

/dt

̡ᚈꢔĮƇMOSFET ꢜꢝꢞիիᘦꢊ

(℔ᔋ 3)

ማꢂ૧

V/ns

W

°C

P

D

−

12

T

J

−

+150

+130

+150

ꢇꢈꢃꢄ (℔ᔋ 4)

ᖈภꢔ࿅ļꢃꢄ (℔ᔋ 4)

സʈꢄꢍී

ࣔ

−40

−55

T

STG

°C

MOSFET ᮸Ϧ

V

ꢜꢝ᧥ꢝꢞի(R = 1 MW)

600

−

30

33

11

7

V

A

DGR

GS

V

᧥ꢝ⁰ꢝ (GND) ꢞի

௙Βꢜꢞἡ (℔ᔋ 5)

᪮ꢘꢜꢝꢞἡ

GS

I

−

DM

I

D

T

= 25°C

−

C

= 100°C

−

C

PACKAGE ꢊ᎕᮸Ϧ

ᑍʹ ლᙾኊ᧳ᑍʹ

5~7

kgf·cm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(֢૓ᚡᝧ)

ୢ᥼ꢞիᡕ᪗ꢇꢈ⍭ൺȜጸꢃϷꢁꢔȜී

ࣔ

，

ࡈ

Öꢅ்úᔿय。ୢ᥼ᡕ᪗Ûĵꢙ{ꢆȜ，෦ៀẵƽᚑ

ࡈ

Öꢂ்，ꢅ்úොೄ

ࡈ

Öᔿय，ᅑ

ڭ

ꢅ∰ሇ。

3. ᶯꢆMOSFET (ꢅꢆMOSFET ᯍො᫪)。

4. ᐠᖈภꢔ࿅ļ൒ꢄꢇꢈȜַꢆn⋍ƽᒄꢂ்。

5. ௙Βඝꢍַꢆnꢇꢈꢃꢄ。

⋍ℋἫᚥ (T = 25°C，ℴ∮

׆

ᣩᛄ៮。)

A

׶

ꢉ

ꢜᝐ

ᝐꢛ

10.44

80

Եĭ

°C/W

q

ꢃꢟꢃᆣ⋍ℋ (ꢅꢆMOSFET ො᫪)

൒-ꢋꢌ+⃄⋍ℋ

JC

q

JA

ꢁᷴ⑙ሇ (ℴ∮

׆

ᣩᒔൺ，؆ϹT = 25°C。)

A

׶

ꢉ

ꢜᝐ

Ἣᚥ᥁ꢈ

ᣠꢝꢛ ꢒꢓꢛ ᣠꢏꢛ

Եĭ

MOSFET ᮸Ϧ

BV

ꢜꢝꢂ⁰ꢝϛՏꢞի

600

−

V

I

= 200 mA, T = 25°C

DSS

D

A

I

D

= 200 mA, T = 125°C

650

0.32

120

1148

671

A

R

DS(ON)

ො᫪ꢞℋ

V

= 10 V, I = 5.5 A

−

0.38

−

W

GS

DS

D

t

ĳlꢝ

ٱ

֭

ױ

ቂ૭ꢎ⃄ (℔ᔋ 6)

ꢉͅꢞ඙ (℔ᔋ 6)

= 0 V, I

= 11.0 A

−

ns

pF

rr

Diode

C

ISS

= 25V, V = 0 V, f = 1.0 MHz

−

GS

C

OSS

ꢉꢁꢞ඙ (℔ᔋ 6)

−

ꢁ⁰᮸Ϧ

I

LK

ȯਾꢜꢞἡ

H−V = V = 600 V/500 V

CTR

−

50

mA

CC

5

FSFR2100

ꢁᷴ⑙ሇ (ℴ∮

׆

ᣩᒔൺ，؆ϹT = 25°C。) (ꢘ)

A

׶

ꢉ

ꢜᝐ

Ἣᚥ᥁ꢈ

ᣠꢝꢛ ꢒꢓꢛ ᣠꢏꢛ

Եĭ

ꢁ⁰᮸Ϧ

I HV

HV ȯਾꢜꢞἡ

(HV UV+) − 0.1 V

−

50

100

6

120

200

9

mA

Q

CC

I LV

LV ȯਾꢜꢞἡ

CC

(LV UV+) − 0.1 V

CC

Q

CC

I HV

࿅ļHV ꢞ⁰ꢞἡ (RMSȜ)

f

= 100 kHz, V

> 0.6 V

mA

O

CC

OSC

CON

ៀꢏ͓，V

< 0.4 V

100

7

200

11

CON

I LV

࿅ļLV ꢞ⁰ꢞἡ (RMSȜ)

f

= 100 kHz, V

mA

O

CC

OSC

CON

ៀꢏ͓，V

< 0.4 V

2

4

CON

UVLO ᮸Ϧ

LV UV+

LV ꢞ⁰ᴀիᵃ

ױ

⃐Ȝ(LV ؏҈)

13.0

10.2

−

14.5

11.3

3.2

16.0

12.4

−

V

CC

LV UV−

CC

LV ꢞ⁰ᴀի៯

ױ

⃐Ȝ(LV ȼᵂ)

CC CC

LV UVH LV ꢞ⁰ᴀի₾

ࢾ

CC

HV UV+ HV ꢞ⁰ᴀիᵃ

ױ

⃐Ȝ(HV ؏҈)

8.2

7.8

−

9.2

10.2

9.6

−

CC

HV UV− HV ꢞ⁰ᴀի៯

ױ

⃐Ȝ(HV ȼᵂ)

8.7

CC

HV UVH HV ꢞ⁰ᴀի₾

ࢾ

0.5

CC

ᔏัꢂ⛾֭⑘᮸Ϧ

V

ᖇꢀჵ௪ё✈⃐Ȝꢞի

ᖇꢀჵ௪ş்⃐Ȝꢞի

V-I ᨼᕂ

ࡈ

⃐Ȝꢞի

ꢉꢁᔏั⍡ꢊ

0.36

0.54

1.5

94

0.40

0.60

2.0

100

50

0.44

0.66

2.5

106

52

V

CONDIS

V

CONEN

V

RT

R = 5.2 KW

T

V

f

kHz

%

OSC

DC

ꢉꢁՀՊᶴ

48

f

SS

t

SS

ͥ᮸ᨿ؏҈Ͻ஫⍡ꢊ

ͥ᮸ᨿ؏҈ꢎ⃄

f

SS

= f

OSC

+ 40 kHz, R = 5.2 kW

−

140

3

−

kHz

ms

T

2

4

ƽᒄ᮸Ϧ

I

OLP ზ᪯ꢞἡ

OLP ƽᒄꢞի

V

= 4 V

3.6

4.5

21

4.8

5.0

6.0

5.5

25

mA

V

OLP

CON

V

> 3.5 V

OLP

CON

V

LV ᪗իƽᒄ

CC

L−V > 21 V

23

V

OVP

CC

V

AOCP ⃐Ȝꢞի

DV/Dt = −0.1 V/ms

−1.0

−

−0.9

50

−0.8

−

V

AOCP

t

AOCP ὨⅠꢎ⃄ (℔ᔋ 6)

OCP ⃐Ȝꢞի

V

CS

< V ; DV/Dt = −0.1 V/ms

AOCP

ns

V

BAO

V

V/Dt = −1 V/ms

< V ; DV/Dt = −1 V/ms

−0.64

1.0

−

−0.58

1.5

−0.52

2.0

400

150

−

OCP

t

OCP ὨⅠꢎ⃄ (℔ᔋ 6)

V

CS

ms

ns

°C

mA

V

BO

OCP

t

ზ᪯ꢎ⃄ (ĮƇ) ®V

᪠ἫА͓ឍ (ꢀꢁ 6) DV/Dt = −1 V/ms

AOCP

250

130

100

−

DA

T

⋍͓₽ꢄꢍ (℔ᔋ 6)

110

−

SD

SU

I

ƽᒄῑസ

ࡈ

ƽꢗ LV ꢞ⁰ꢞἡ

LV = 7.5 V

CC

V

ƽᒄῑസ

ࡈ

૭ĭLV ꢞ⁰ꢞի

5

PRSET

CC

ᵛԚ៖⃄ᖇЖ᮸Ϧ

Dead Time (℔ᔋ 7)

D

T

−

350

−

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(֢૓ᚡᝧ)

ℴ∮

׆

ᣩᛄ៮，“ꢞᷴ⑙ሇ”ጸ᨜ꢃϷꢁꢔꢚᐠϷἫᚥ᥁Ö⛻ꢔ

ڡ

ሇ்֢ᝐ。ୢ᥼ई⛽

׬

᥁Ö⛻ꢠጜ，

ڡ

ሇ்ꢅ்⛾“ꢞᷴ⑙ሇ”ጸ᨜

ꢃᐠϷሇ்֢ᝐ⛽⛰ೄ。

6. ᚵ֢ᝐꢡꢒꢓƽᚑ；ꢢটꢣἫᚥ。

7. ꢙ{֢ᝐꢤ

ٱ

ট᪗ƽᚑ，?¥ई EDS (ꢥꢦἫᚥ) ᪗ӛꢃἫᚥ。

6

FSFR2100

ꢒꢓሇ்⑙ᅡ

(ꢙ{⑙ሇꢧई T = 25°C ⛻ꢨΦӶ。)

A

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

100

−50

−25

0

25

50

75

100

Temp (°C)

ꢑ 4. ĮƇMOSFET ՀՊᶴ⛾ꢀႆŔꢅ

ߋ

ꢑ 5. ꢄꢅ⍡╧⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

−50

−25

0

25

50

75

Temp (°C)

ꢑ 6. ▨ƇV_CC(HV_CC) ؏҈⛾ꢀႆŔꢅ

ߋ

ꢑ 7. ▨ƇV_CC(HV_CC) ȼᵂ⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.05

1

0.95

0.9

−50

−25

0

25

50

75

−25

0

25

50

75

Temp (°C)

ꢑ 8. ĮƇꢞV_CC(LV_CC) ؏҈⛾ꢀႆŔꢅ

ߋ

ꢑ 9. ĮƇV_CC(LV_CC) ȼᵂ⛾ꢀႆŔꢅ

ߋ

7

FSFR2100

ꢒꢓሇ்⑙ᅡ (ᖅ⛺ꢩ)

(ꢙ{⑙ሇꢧई T = 25°C ⛻ꢨΦӶ。)

A

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

100

−50

−25

0

25

50

75

100

Temp (°C)

ꢑ 10. OLP ꢟ᪯ꢁἡ⛾ꢀႆŔꢅ

ߋ

ꢑ 11. OLP ƽᒄꢁꢠ⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

−50

−25

0

25

50

75

Temp (°C)

ꢑ 12. LV_CCOVP ꢁꢠ⛾ꢀႆŔꢅ

ߋ

ꢑ 13. R_Tꢁꢠ⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

0.9

−50

−25

0

25

50

75

−25

0

25

50

75

Temp (°C)

ꢑ 14. CON ჵ௪ꢡ்ꢁꢠ⛾ꢀႆŔꢅ

ߋ

ꢑ 15. OCP ꢁꢠ⛾ꢀႆŔꢅ

ߋ

8

FSFR2100

ꢃ்ᛄ៮

Gain

1.8

ꢢᤌꢋꢌ

FSFR2100 ᚎᙱꢂ╁҈ꢀƇ

٬

ĮƇ MOSFET，

פ

Հ

50%ꢃՀՊᶴ。ई᪮ঽᨼᕂ᣿⃄ჵͅf

ࣚ

ൺᵛԚ៖⃄

350 ns，ୢ

ࣞ

16. ᐠЊ。

max

min

normal

ISS

f

1.6

1.4

1.2

1.0

0.8

0.6

Dead time

High side

MOSFET

gate drive

Low side

MOSFET

gate drive

Soft−Start

time

ꢑ 16. MOSFET ᧥ᥡ╁҈ꢇꢉ

60 70 80 90 100 110 120 130 140 150

ꢔ᮸ᔏัꢂ

Frequency (kHz)

FSFR2100ꢃᲗ✈ꢀἡᖇЖŔᔏั

ࡈ

，ୢ

ࣞ

17. ᐠЊ。

ꢑ 18. ᛠᔏᨼᕂꢂꢒꢓꢣƚᣒএ

ईͥ᮸，R ჵ௪Ŕꢀիᛓ൒ई 2 V，ၖ✄ᔏั

ࡈ

ꢀ඙

T

C Ŕ̥ꢀ/᜞ꢀꢀἡ᫪᪗ş✈ꢀἡ ʯ૭Ж® R ჵ௪

T

LV_CC

VDL

(I

Ŕ੾Ҁ૜੾Ҁ。

) ἡϚŔꢀἡ᥅ງᅷ。

ࣀ

ᵄ，რꢀ⍡╧⅟Ȑ I

CTC

RT

I_CTC

V_REF

+

−

+

−

S

R

Q

3 V

1 V

R_max

R_mi

R_ss

−Q

I_CTC

2I_CTC

C_T

F/F

Control

IC

CON

C_ss

+

2 V

−

Divider

(1/4)

R_T

Gate Drive

3

ꢑ 17. ꢁἡᖇЖŔᔏัꢂ

SG

PG

⍡╧ᚎਾ

ꢑ 19. ⍡╧ᖇЖꢁᢿ

ࣞ

18. ᠞Њᛠᔏᨼᕂ

ࡈ

Ŕ͘५ꢀի੾ƚᣒএ，͖ꢆ

੾ƚ⛾ꢃZVS ԚꢆŔრꢀ⍡╧Ᏸ֭ᶴ。ᩣϚꢀի

׏

᫪᪗

ᣠ෯რꢀ⍡╧ꢁ⛻ჯ̾ൺ：

ᛓЖრꢀ⍡╧᥅ᛓ൒。

ࣞ

ꢃ19.ꢃ᠞Њ R ꢃჵ௪Ŕ͘५ꢀᢿ

T

5.2 kW

f^min

+

100 (kHz)

ᰝਾ，͖ꢆ̩ꢀ૶

ࡈר

ꢀℋ᪮ᖅೃ R ꢃჵ௪ÅᛓЖრ

T

(eq. 1)

R_min

ꢀ⍡╧。

ȧൺ̩ꢀ૶

ࡈר

ꢀℋŔ⑁

٬ꢀի

ꢂ 0.2 V，Ϲᣠଇრ

ꢀ⍡╧ꢁ⛻ჯ̾ൺ：

5.2 kW 4.68 kW

f^max

)

100 (kHz)

₊ǒ

Ǔ

(eq. 2)

R_min

R_max

9

FSFR2100

ꢂfℂᵂई؏҈℆ᶕ，Βϛꢀἡ᪗ଇ，ᩣϚꢀի᪗

Β，⇐ᑑ᫠῰੾Ҁᚵᛠᔏᨼᕂ

ࡈ

Ŕꢀի੾ƚ。ꢁnᛠ

ᔏᨼᕂ

ࡈ

Ŕꢀի੾ƚ⛾რꢀ⍡╧Ᏸ֭ᶴ，

ࣀ

ᵄ᫪᪗®

௙Βᣃᢓ

ᄳᖇЖჵ௪ꢀիℝೃꢃ0.4 V Å⛻៖，FSFR2100ꢃȼᵂ

რꢀᚭļ，ၖईᖇЖჵ௪ꢀի⛺ԧೃ 0.6 VꢃÅ⛺៖ቂ

૭რꢀᚭļ。ᑑş✈௙Βᣃᢓ，ᖇЖჵ௪ၴ᪮ᖅೃ̩

ꢀ૶

ࡈר

ꢁꢀᥡჵ௪。ჵᡇ௙ΒᣃᢓŔ⍡╧

׏

ꢁ⛻ჯ

ᅷϚ：

ISS

Ͻ஫ꢀ⍡╧ (f )ꢃ

ױ

⛻ᑋᖯრꢀ⍡╧Ǆೃლ֛ᩣϚꢀ

ի，᥅ൾឝᨿ؏҈。᫪᪗ई R ꢃჵ௪⛺᪮ᖅ R-Cꢃ

ߋ

Ϸ

T

ਡব᥅ლ֛ᨿ؏҈ꢀᢿ，ୢ

ࣞ

19.ꢃᐠЊ。FSFR2100ꢃ?

ᣩ⛰ꢇ 3 msꢃŔͥ᮸ᨿ؏҈᥅ℝĮϽ஫

و

᣿᪗ӛꢆŔꢀ

ἡ᪗Β，᪩ฑ

ױ

ꢂ᮸ᨿ؏҈ꢀᢿŔϽ஫⍡╧ꢆ੾Ҁf

40 kHz，ୢ

ࣞ

20. ᐠЊ。ᨿ؏҈ŔϽ஫⍡╧ꢁ⛻ჯ঩

Ϛ：

5.2 kW 4.16 kW

f^SKIP

)

100 (kHz)

₊ǒ

Ǔ

(eq. 5)

V_DL

R_min

R_max

LV_CC

5.2 kW 5.2 kW

f^ISS

)

100 ) 40 (kHz)

₊ǒ

Ǔ

᫪ဘ෦ᨿ؏҈ŔϽ஫⍡╧ᚎਾꢂᛠᔏਡবŔᛠᔏ⍡

(eq. 3)

R_min

R_SS

RT

╧ (f ) Ŕꢈೃ⛹ǭ。

O

ᨿ؏҈៖⃄᠏ꢃRC ៖⃄ဘᝐŔ⛹ೃ

ࢻ

ǭ。RC ៖⃄ဘ

ᝐୢ⛻ᐠЊ：

R_max

R_min

R_ss

Control

IC

T_SS+ R_SS@ C_SS

CON

(eq. 4)

C_ss

f_s

f ^ISS

40 kHz

Control loop

take over

SG

PG

ꢑ 22. ✈ꢀ௙ꢤᣃᢓŔᖇЖჵ௪ᰝਾ

᪬ӛრ/͓

ᄳᩕ҉ꢀ⁰✈nᅥᤚ៖，ş✈ FSFR2100ꢃŔꢉѿ╧

ॷ

׏

᫪᪗⛻ᒩᖇЖჵ௪ꢀիꢀឍ，ୢ

ࣞ

23.ꢃꢆᐠЊ。

R1

٬

C1 ✈ n̾ƽრꢀᚭļቂ૭៖ᨿ؏҈。

time

ꢑ 20. ᨿ؏҈Ŕ⍡╧ᑋᖯ

ᖇЖჵ௪

Main

OP1

FSFR2100 ͗ᣩ⛰ꢇ✈nƽᒄ、

و

᣿ᣃᢓ

٬

᪬ӛრ/

ꢀŔᖇЖჵ௪。

ࣞ

ꢃ21. ᠞ЊᖇЖჵ௪Ŕͥ᮸ᨦ

ࣞ

。

Output

R1

+

LV_CC

I_delay

C1

+

2

CON

Power

Main Off

Switch

0.6 V /

0.4 V

−

+

5 V

S

Q

−

OLP

R_T

R_min

AUX

R −Q

LV_CC

OVP

+

−

Stop

Switching

Output

+

Auto−restart

Protection

LV_CCGood

CON

ꢑ 21. ᖇЖჵ௪Ŕꢔ᮸ᨦꢑ

OP1

ƽᒄ

ᄳᖇЖჵ௪ꢀիᡕ᪗ꢃ5 V ៖，෦ᒶֱƽᒄ。ᚶখၴ

✈ईƽᒄ᮸Ϧᣩᐠᖯᫀ。

ꢑ 23. ᪬ӛꢄ/ꢅꢁᢿ

10

FSFR2100

ꢁἡዿἫ

ꢂᣠଇӛႆऐί෯ѿ૧，᫪ဘ෦ꢀ඙Ϧի

ࡈ

✈nꢀ

඙ꢀիዿἫ，ୢ

ࣞ

26. ᐠЊ。

ş✈ꢀℋŔꢀἡዿἫ

FSFR2100ꢃ᪠Ἣ⃯ꢀἡꢂ៯ի，ୢ

ࣞ

24.ꢃ

٬

ࣞ

25.ꢃᐠ

Њ。ԪỂ᪠Ἣយჯ̡ᚈ᪠Ἣꢀℋ⛿Įѿ૧，ꢊ᠏ꢋ

Ể᪠ἫយჯŔ᪠Ἣǁ

ח

͗ᣩᩓĮრꢀ

ࡊ

ૐ。

R

T

+

Cr

Np

Control

IC

CON

Ns

Np

C

d

Ns

I

p

R

d

+

Ns

SG

PG

100

Control

IC

V

SENSE

+

C

+

−

V_CS

B

Cr

I_ds

−

CS

C

SENSE

SG

PG

Ids

R_sense

+

I

p

−

V _CS

V

Cr

p−p

V

Cr

ꢑ 24. ꢁỂ᪠Ἣ

pk

I _ds

C

V

pk

sense

B

V

sense

2

V

+

sence

p*p

+

V

CON

C

) C

B

V

sense

Cr

pk

V

sence

V

CON

V _CS

V

sence

T

delay

= R C

d d

+

Cr

ꢑ 26. ꢡ✈ᛠᔏꢁꢦꢁꢠŔꢁἡዿἫ

Control

IC

V_CS

ƽᒄꢁᢿ

Ns

Np

CS

FSFR2100ꢃ͗ᣩૺꢇ಺Ᏹƽᒄѿ்，ୢ᪗ᩍƽᒄ

(OLP)、᪗ἡƽᒄ (OCP)、ტဘ᪗ἡƽᒄ (AOCP)、᪗

իƽᒄ (OVP)ꢃ

٬⋍

ꢀឍ (TSD)。OLP、OCPꢃ

٬

OVP

ꢂ಺҈Ო؏ᰁჯƽᒄ；૜ AOCPꢃ

٬

TSDꢃꢂꢂꢃᰁჯ

ƽᒄ，ୢ

ࣞ

27. ᐠЊ。

PG

SG

R_sense

+

−

Ids

ꢑ 25. ꢥỂ᪠Ἣ

಺҈Ო؏ᰁჯƽᒄ

⛰ ំ ᪠ Ἣ А ᜥ ꢄ እ Ε ， რ ꢀ ᚭ ļ Փ ঘ ᵂ ၖ ✄

ş✈ᛠᔏꢀ඙ꢀիŔꢀἡዿἫ

MOSFETꢃƽᓡꢀឍ。ᄳ LV ꢃℝೃ 11.3 VꢃŔ LV ꢃȼᵂ

cc

ෙnꢀѿ╧ၴ✈，ş✈ꢀℋŔꢀἡዿἫ

׏

்

ࣀ

ꢀℋ

ꢆᥡꢀŔѿ૧૜ꢌ

׏

✈。ई᪩ҝእΕ⛻，ş✈ᛠᔏꢀ

඙ꢀիŔ⃄ᖅꢀἡዿἫꢍ᠏⛰ꢇଢ଼Ŕꢃ᫙យᨨ，

ࣀ

ꢂ

ꢀի，෦૭ꢎƽᒄ。ᄳ LV ꢃ᪎А 14.5 VꢃŔ؏҈ꢀի

cc

៖，ѿ╧რꢀቂ૭ᵃဘᚭļ。

p−p

ᛠᔏꢀ඙ꢀի (V

ꢀἡᏰᵃᶴꢂ：

)ꢃŔဥႆ⛾Ͻॷֿ (I

)ꢃŔᛠᔏ

cr

p

p*p

I_p

p*p

V_Cr

+

(eq. 6)

2pf_sC_r

11

FSFR2100

₹ῑᰁჯƽᒄ

⛰ំᒶֱᵄƽᒄ，რꢀՓঘᵂၖ✄ MOSFETꢃƽᓡꢀ

᪗իƽᒄ (OVP)

ᄳ LV ꢃ᪎А 23 Vꢃ៖，෦ᒶֱ OVP。ईş✈

ױ

ѿ╧

cc

ឍ。ꢂꢃꢏई LV ᜞ꢀೃĮn 5 V ៖૭ꢎ。

რꢀŻၴ V ꢃŔָի

ࡈ

Ŕᩕ҉থঔ៖，ş✈ᵄƽᒄ。

cc

⋍͓ឍ (TSD)

LV_CC

7

MOSFETꢃ

٬ᖇЖ

ICꢃई⛰ꢇ෡ꢉꢆşᖇЖ ICꢃ᪠Ἣ

MOSFETꢃŔტဘ᪗ꢄָᅷِԵ。ୢ᥼ꢄႆᡕ᪗ॶ

130_，෦ᒶֱ⋍ꢀឍ。

+

−

LV_CCgood

Internal

Bias

V_REF

11 / 14 V

PCB ꢕꢖᓧꢧ

Shutdown

ꢁnꢉָի

ࡈ

Ŕꢊ෤

ࡊ

⋃、ꢉָի

ࡈ

Ŕᴁॷֿ⃯ዿ

ꢌǈؙؙտ

׏ࣀ

்ֱ⛿ՀՊᶴꢌၓꢋꢌꢍ。R ꢃჵ௪ꢎ

OCP

Latch

Protection

T

Auto−restart

Protection

OLP

ꢏŔᖇЖꢔÖई PCBꢃ࿣ภ⛺ꢐꢉϽॷֿꢀἡ▏ᢿӥ

ࣔ

᠏ꢑᏰՀՊᶴꢌၓꢋŔꢉᑑտ

ࣀ

。ᄳꢀĮƇ MOSFET

ꢕᣟො᫪៖，ꢁϽॷֿꢀἡἡ

ױ

ොꢇŔꢔÖ⛺ΑचŔ

យ

ױ

ֱ⛿ָӶ。ǈꢖយ

ױ

ǈ֭ŔΑच⛿᫪᪗、᪫ͅ

AOCP

Q

S

R

S

R

Q

OVP

−Q

LV_CCgood

CON

−Q

TSD

F/F

20 k

LV_CC< 5 V

᏶® R ꢃჵ௪ἡϚŔꢀἡ，᪩şᅷᶯꢇ MOSFETꢃŔො

T

᫪ᓡঽ៖⃄

פ

ꢌǈ

׬

。ᄚ⊨ლꢒ෦ R ꢃჵ௪ꢎꢏŔᖇ

Ж ꢔ Ö ⛾ PCBꢃ ࿣ ภ ⛺ Ŕ Ͻ ॷ ֿ ꢀ ἡ ᢿ ᅤ Ϧ რ 。

ࣞ

28.ꢃ᠞ЊՀՊᶴၓꢋእΕŔЊꢗ。

T

ꢑ 27. ƽᒄᨦꢑ

᪗ἡƽᒄ (OCP)

ᄳዿἫჵ௪ꢀիℝೃĮnꢃ-0.58 Vꢃ៖，ᒶֱ OCPꢃၖ

✄ MOSFETꢃƽᓡꢀឍ。ᵄƽᒄ͗ᣩ 1.5ĂmsꢃŔꢀឍ៖⃄

ზꢅÅꢆꢐ؏҈᣿⃄ᖰЭꢀឍ。

ტဘ᪗ἡƽᒄ (AOCP)

ୢ᥼ᴁॷ᝔ἡ

ࡈ

lᥡ

ٱ

ʽᢿ，͗ᣩᥡꢀ di/dtꢃŔଇꢀ

ἡ

׏

ईᒶֱ OCPꢃ᏶ OLPꢃꢑЭἡট MOSFET。ᄳዿἫ

ჵ௪ꢀիℝೃĮnꢃ-0.9 Vꢃ៖，෦ᒶֱ AOCP，✄ẁᣩ

ꢀឍზꢅ。ᵄƽᒄꢂꢂꢃᰁჯၖई LV ꢃ⛻ᒩೃĮn

cc

5 Vꢃ៖૭ꢎ。

᪗ᩍƽᒄ (OLP)

᪗ᩍൺꢒꢂ

ࣀ

ዯꢂტဘꢓÖොꢇᡕ᪗͖ᵃဘꢀၓŔ

៯ᩍꢀἡ。ई᪩ҝእΕ⛻，ၴᒶֱƽᒄꢀᢿÅƽᒄꢀ

⁰。ꢊ᠏，Փşꢀ⁰૤nᵃဘ⒖Ε，ई៯ᩍָӶ᣿⃄

?

׏

்ֱ⛿᪗ᩍእΕ。ꢂꢆꢐᖰЭᒶֱƽᒄ，᪗ᩍƽ

ᒄꢀᢿၴᚎᙱꢂꢏई⛰ൺ៖⃄

׮

ᒶֱ，Å̾ൺ᪩᠏ɼ

ᇡእΕ᪨᠏ǯᵃŔ᪗ᩍእΕ。

ࣞ

26.ꢃ᠞Њ͘५᪗ᩍƽ

ᒄꢀᢿ。᫪᪗ዿἫᖇЖჵ௪⛺Ŕᛠᔏꢀ඙ꢀի，

׏

ൾ

ឝ᪗ᩍƽᒄ。᫪᪗ş✈ RCꢃ៖⃄ဘꢈ，?

׏

ჵͅꢀឍ

ზꢅ。ईᖇЖჵ௪⛺ງᅷŔꢀիꢁ⛻ჯ঩Ϛ：

ꢑ 28. ՀՊᶴꢨጱЊꢩ

C_B

p*p

V_CON

+

V_Cr

(eq. 7)

2(C_B) C_sense

p-p

)

͖ꢆ V

ꢃ᠏ᛠᔏꢀ඙ꢀիŔဥႆ。

Cr

12

FSFR2100

ꢒꢓꢆ✈ꢁᢿ (ꢁᩅ LLC ᛠᔏᨼᕂꢂ)

ጸ 1.

ꢆ✈

LCD ꢞꢪ

ꢃ╧ꢄꢅꢂꢈ

ᩣꢪꢁꢠීꢫ

390 V (340~400 V

⍭ꢗᩣꢐꢃ╧

ᩣꢐꢁꢠ(⍭ꢗꢁἡ)

FSFR2100

)

DC

200 W

24 V − 8.3 A

DC

⑙ሇ

• ꢀᜨ╧ (400 V ᩣͅ៖ >94%)

DC

• ᫪᪗⇆ꢀիრꢀ (ZVS) ℝĮ EMI

ࡊ

⋃

• ᫪᪗

פ

ҝƽᒄѿ்੾ᄚ

ߋ

য

׏

∰ሇ

ꢑ 29. ꢒꢓꢆ✈ꢁᢿ

13

FSFR2100

ꢒꢓꢆ✈ꢁᢿ (ꢘ)

᫪ဘ，LLC ᛠᔏᨼᕂ

ࡈ

⇐ᑑଇ⃯ዿ。ꢂfງֶᩓଇŔ⃯ꢀዿ，Თ✈Ϧᶕথঔẵ。

• Αꢓ：EC35 (Ae = 106 mm2)

• এ

آ

：EC35 (Ḕၓ)

• ָի

ࡈ

५

ח

：SNX-2468-1

EC35

3.3 mm

12.8 mm

9.5 mm

N

2

6

13

12

p

N

s2

s1

N

p

2

6

13

9

10

9

12

10

N

S2

S1

ꢑ 30. ꢬꢠꢂণᥤ

ጸ 2.

ჵ௪ (S " F)

6 → 2

থএ

ꢭᝐ

36

4

ꢮỈ

N

0.08φ x 88 (Љ͙ꢫ)

0.08φ x 234 (Љ͙ꢫ)

p

Ns1

Ns2

12 → 9

ꢬꢫꢭꢮ

10 → 13

4

ጸ 3.

ჵ௪

2−6

ᒔ᨜

ꢮỈ

Ͻꢯꢞዿ (L )

550 mH 10%

110 mH 10%

100 kHz, 1 V

p

Ͻꢯᣩꢰꢜꢞዿ (L )

ꢱᢿꢲꢯꢭꢮ+⛰

r

ᣩꢀָի

ࡈ

Ŕᣔૺᚶখǁ቏，ꢔꢕꢌ http://www.santronics−usa.com/documents.htmlꢃ᏶ତ

ߋ

sales@santronics−usa.comꢃ

᏶ +1−408−734−1878 (ਫ਼

ࣝ

ҀЉџผꢘᨱผৄ෴)。

SUPERFET is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States

and/or other countries.

14

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SIP9 26x10.5

CASE 127EM

ISSUE O

DATE 31 DEC 2016

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DOCUMENT NUMBER:

DESCRIPTION:

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SIP9 26x10.5

PAGE 1 OF 1

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型号：	FSFR2100
厂家：	ONSEMI
描述：	600V 集成电源开关 (FPS™)，用于 450W 半桥谐振转换器开关 PC 驱动电源开关接口集成电路转换器
文件：	总16页 (文件大小：1247K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSFR2100 [ONSEMI]

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FSG15N1A

FSGJ063D1

FSGJ063R3