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January 2014

FSQ510 / FSQ510MX

Green Mode Fairchild Power Switch (FPS™)

for Valley Switching Converter – Low EMI and High Efficiency

Features

Description

A Valley Switching Converter (VSC) generally shows

lower EMI and higher power conversion efficiency than

a conventional hard-switched converter with a fixed

switching frequency. The FSQ510 is an integrated

Valley Switching Pulse Width Modulation (VS-PWM)

controller and SenseFET specifically designed for

offline Switch-Mode Power Supplies (SMPS) for valley

switching with minimal external components. The VS-

PWM controller includes an integrated oscillator, under-

voltage lockout (UVLO), leading-edge blanking (LEB),

optimized gate driver, internal soft-start, temperature-

compensated precise current sources for loop

compensation, and self-protection circuitry.

. Uses an LDMOS Integrated Power Switch

. Optimized for Valley Switching Converter (VSC)

. Low EMI through Variable Frequency Control and

Inherent Frequency Modulation

. High Efficiency through Minimum Drain Voltage

Switching

. Extended Valley Switching for Wide Load Ranges

. Small Frequency Variation for Wide Load Ranges

. Advanced Burst-Mode Operation for Low Standby

Power Consumption

Compared with discrete MOSFET and PWM controller

solutions, the FSQ510 can reduce total cost,

component count, size and weight; while simultaneously

increasing efficiency, productivity, and system reliability.

This device provides a platform for cost-effective designs

of a valley switching flyback converters.

. Pulse-by-Pulse Current Limit

. Protection Functions: Overload Protection (OLP),

Internal Thermal Shutdown (TSD) with Hysteresis

. Under-Voltage Lockout (UVLO) with Hysteresis

. Internal Startup Circuit

. Internal High-Voltage SenseFET: 700 V

. Built-in Soft-Start: 5 ms

Applications

. Auxiliary Power Supplies for LCD TV, LCD Monitor,

Personal Computer, and White Goods

Ordering Information

Output Power Table⁽¹⁾

Packing

Operating

Junction

230 V_AC± 15%⁽²⁾

85-265 V_AC

Part

Number

Current R_DS(ON)

Limit (Max.)

Package

Method

Open

Adapter⁽³⁾

Open

Adapter⁽³⁾

Temperature

Frame⁽⁴⁾

FSQ510

7-DIP

Rail

320 mA

5.5 W

9 W

4 W

6 W

-40 to +130°C

32 Ω

Tape &

Reel

FSQ510MX 7-MLSOP

For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

Notes:

1. The junction temperature can limit the maximum output power.

2. 230 V_ACor 100/115 V_ACwith voltage doubler.

3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a non-

ventilated, enclosed adapter housing, measured at 50°C ambient temperature.

4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature.

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

Application Circuit

Vo

AC

IN

V_str

D

VS

-PWM

Sync

GND

V_fb

V_cc

Figure 1. Typical Application Circuit

Internal Block Diagram

Sync

4

V_cc

5

V_str

8

D

7

200ns

delay

UVLO

V_REF

0.7V / 0.1V

8.7V / 6.7V

V_REF

I

delay

IFB

OSC

3

V_fb

S

R

Q

6R

R

360ns

LEB

R

sense

(0.4V)

0.85V / 0.75V

S/S

5msec

OLP

S

R

TSD

Q

4.7V

A/R

1,2

GND

Figure 2. Internal Block Diagram

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

2

Pin Configuration

GND

V

str

D

FSQ510

V

fb

Sync

V

cc

Figure 3. Pin Assignments

Pin Definitions

Pin #

1, 2

Name

Description

GND This pin is the control ground and the SenseFET source.

This pin is internally connected to the inverting input of the PWM comparator. The collector of

an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed

between this pin and GND. If the voltage of this pin reaches 4.7 V, the overload protection

triggers, which shuts down the FPS.

3

4

V_fb

This pin is internally connected to the sync-detect comparator for valley switching. In normal

valley-switching operation, the threshold of the sync comparator is 0.7 V/0.1 V.

Sync

This pin is the positive supply input. This pin provides internal operating current for both startup

and steady-state operation.

5

7

V_CC

D

High-voltage power SenseFET drain connection.

This pin is connected directly, or through a resistor, to the high-voltage DC link. At startup, the

internal high-voltage current source supplies internal bias and charges the external capacitor

connected to the V_CCpin. Once V_CCreaches 8.7 V, the internal current source is disabled.

8

V_str

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

3

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device

reliability. The absolute maximum ratings are stress ratings only.

Symbol

V_STR

Parameter

Min.

Max.

500

700

20

Unit

V

V_strPin Voltage

Drain Pin Voltage

Supply Voltage

V_DS

V

V_CC

V

Internally

Feedback Voltage Range

V_FB

-0.3

V

Clamped⁽⁵⁾

V_Sync

Sync Pin Voltage

6.5

7-DIP

1.38

P_D

Total Power Dissipation

W

7-MLSOP

Maximum Junction Temperature

+150

+140

+150

T_J

°C

Recommended Operating Junction Temperature⁽⁶⁾

Storage Temperature

-40

-55

T_STG

Notes:

5. V_FBis internally clamped at 6.5 V (I_{CLAMP_MAX}<100 µA) which has a tolerance between 6.2 V and 7.2 V.

6. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

Thermal Impedance

T_A=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP).

Symbol

Parameter

Value

Unit

7-DIP, 7-MLSOP

θ_JA

θ_JC

Junction-to-Ambient Thermal Impedance⁽⁷⁾

Junction-to-Case Thermal Impedance⁽⁸⁾

90

13

°C/W

Notes:

7. Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature

T_Jenters into TSD.

8. Measured on the DRAIN pin close to plastic interface.

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

4

Electrical Characteristics

T_J=25°C unless otherwise specified.

Symbol

Parameter

Conditions

Min. Typ. Max.

Unit

SenseFET Section

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero-Gate-Voltage Drain Current

700

V

µA

Ω

V

_CC=0 V, I_D=100 µA

V_DS=700 V

150

T_J=25°C, I_D=180 mA

T_J=100°C, I_D=180 mA

V_GS=11 V

28

42

32

48

R_DS(ON)

Drain-Source On-State Resistance

Ω

Input Capacitance⁽⁹⁾

Output Capacitance⁽⁹⁾

Rise Time⁽⁹⁾

C_ISS

C_OSS

t_r

96

pF

ns

V_DS=40 V

28

V_DS=350 V, I_D=25 mA

V_DS=350 V, l_D=25 mA

100

50

Fall Time⁽⁹⁾

t_f

Control Section

Initial Switching Frequency

Switching Frequency Variation⁽⁹⁾

V_CC=11 V, V_FB=5 V, V_sync=0 V

-25°C < T_J< 125°C

f_S

87.7

94.3

±5

100.0

±8

kHz

%

∆f_S

I_FB

Feedback Source Current

V_CC=11 V, V_FB=0 V

200

7.2

225

250

µA

V_CC=11 V, V_FB=1 V,

V_syncFrequency Sweep

t_B

Switching Blanking Time

7.6

8.2

µs

Valley Detection Window Time⁽⁹⁾

Maximum Duty Ratio

t_W

3.0

60

µs

%

V

V_CC=11 V, V_FB=3 V

V_CC=11 V, V_FB=0 V

V_FB=0 V, V_CCSweep

After Turn-on, V_FB=0 V

V_STR=40 V, V_CCSweep

D_MAX

D_MIN

V_START

V_STOP

t_S/S

54

66

0

Minimum Duty Ratio

8.0

6.0

3

8.7

6.7

5

9.4

7.4

7

UVLO Threshold Voltage

Internal Soft-Start Time

V

ms

Burst-Mode Section

V_BURH

0.75

0.65

0.85

0.75

100

0.95

0.85

V

Burst-Mode Voltage

V_CC=11 V, V_FBSweep

di/dt=90 mA/µs

V_BURL

HYS

mV

Protection Section

Peak Current Limit

I_LIM

280

4.2

320

4.7

360

5.2

mA

V

V_DS=40 V, V_CC=11 V,

V_FBSweep

V_SD

Shutdown Feedback Voltage

I_DELAY

Shutdown Delay Current

V_CC=11 V, V_FB=5 V

3.5

4.5

5.5

µA

ns

°C

Leading-Edge Blanking Time⁽⁹⁾

t_LEB

T_SD

360

140

60

130

150

Thermal Shutdown Temperature⁽⁹⁾

HYS

Synchronous Section

V

_CC=11 V, V_FB=1 V

V_SH

0.55

0.05

180

0.70

0.10

200

0.85

0.15

220

V

Synchronous Threshold Voltage

V_CC=11 V, V_FB=1 V

V_SL

Synchronous Delay Time

t_Sync

ns

Total Device Section

Operating Supply Current

I_OP

V_CC=11 V, V_FB=5.5 V

0.8

1.0

1.2

mA

(Control Part Only)

Startup Charging Current

Supply Voltage

V_CC=V_FB=0 V,V_STR=40 V

V_CC=V_FB=0 V, V_STRSweep

I_CH

1.0

27

mA

V

V_STR

Note:

9. These parameters, although guaranteed, are not 100% tested in production.

www.fairchildsemi.com

FSQ510 / FSQ510MX • Rev. 1.4.0

5

Comparison between FSD210B and FSQ510

Function

FSD210B

FSQ510

Advantages of FSQ510

Fast Response

Easy-to-Design Control Loop

Control Mode

Voltage Mode

Current Mode

Constant Frequency

PWM

Valley Switching

Operation

Turn-on at Minimum Drain Voltage

High Efficiency and Low EMI

Operation Method

Frequency Variation Depending on the Ripple

of DC Link Voltage

High Efficiency and Low EMI

EMI Reduction

Method

Frequency

Modulation

Valley Switching

Soft-Start

Protection

3 ms (Built-in)

TSD

5ms (Built-in)

Longer Soft-Start Time

TSD with Hysteresis Enhanced Thermal Shutdown Protection

Small Difference of Input Power between the

Short T_CLD

Power Balance

Long T_CLD

Low and High Input Voltage Cases

Less than 5 W

Under Open-Frame

Condition at the

More than 6 W

Under Open-Frame More Output Power Rating Available due to the

Condition at the

Power Ratings

Valley Switching

Universal Line Input Universal Line Input

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

6

Typical Performance Characteristics

Characteristic graphs are normalized at T_A=25°C.

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [℃]

Figure 4. Operating Frequency (f_OSC) vs. T_A

Figure 5. Peak Current Limit (I_LIM) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [℃]

Figure 6. Start Threshold Voltage (V_START) vs. T_A

Figure 7. Stop Threshold Voltage (V_STOP) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [℃]

Figure 8. Shutdown Feedback Voltage (V_SD) vs. T_A

Figure 9. Maximum Duty Cycle (D_MAX) vs. T_A

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

7

Typical Performance Characteristics (Continued)

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [℃]

Figure 10. Feedback Source Current (I_FB) vs. T_A

Figure 11. Shutdown Delay Current (I_DELAY) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

Temperature [℃]

Figure 12. Operating Supply Current (I_OP) vs. T_A

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

8

Functional Description

1. Startup: At startup, an internal high-voltage current

source supplies the internal bias and charges the

external capacitor (C_a) connected to the V_CCpin, as

illustrated in Figure 13. When V_CCreaches 8.7 V, the

FPS begins switching and the internal high-voltage

current source is disabled. The FPS continues normal

switching operation and the power is supplied from the

auxiliary transformer winding unless V_CCgoes below the

stop voltage of 6.7 V.

2.2 Leading-Edge Blanking (LEB): At the instant the

internal SenseFET is turned on, a high-current spike

usually occurs through the SenseFET, caused by

primary-side capacitance and secondary-side rectifier

reverse recovery. Excessive voltage across the R_sense

resistor would lead to incorrect feedback operation in

the current mode VS-PWM control. To counter this

effect, the FPS employs a leading-edge blanking

(LEB) circuit to inhibit the VS-PWM comparator for a

short time (t_LEB) after the SenseFET is turned on.

V_DC

V_refV_ref

C_a

I_delay

VS signal

OSC

I_FB

V

V_O

SenseFET

FOD817

KA431

fb

3

D1

D2

OB

6R

+

V_fb

Gate

driver

V_CC

V_str

*

R

5

8

-

I_CH

OLP

R_sense

V_SD

V_ref

6.7V/

8.7V

V_CCgood

Figure 14. Valley Switching Pulse-Width

Modulation (VS-PWM) Circuit

Internal

Bias

3. Synchronization: The FSQ510 employs a valley-

switching technique to minimize the switching noise and

loss. The basic waveforms of the valley switching

converter are shown in Figure 15. To minimize the

MOSFET switching loss, the MOSFET should be turned

on when the drain voltage reaches its minimum value,

as shown in Figure 15. The minimum drain voltage is

indirectly detected by monitoring the V_CCwinding

voltage, as shown in Figure 15.

Figure 13. Startup Block

2. Feedback Control: This device employs current-

mode control, as shown in Figure 14. An opto-coupler

(such as the FOD817) and shunt regulator (such as the

KA431) are typically used to implement the feedback

network. Comparing the feedback voltage with the

voltage across the R_senseresistor makes it possible to

control the switching duty cycle. When the reference pin

voltage of the shunt regulator exceeds the internal

reference voltage of 2.5 V, the opto-coupler LED current

increases, pulling down the feedback voltage and

reducing the drain current. This typically occurs when the

input voltage is increased or the output load is decreased.

V_DS

V_RO

V_DC

2.1 Pulse-by-Pulse Current Limit: Because current-

mode control is employed, the peak current through the

SenseFET is limited by the inverting input of PWM

comparator (V_FB*), as shown in Figure 14. Assuming

that the 225 µA current source flows only through the

internal resistor (6R + R=12.6kΩ), the cathode voltage

of diode D2 is about 2.8 V. Since D1 is blocked when

the feedback voltage (V_FB) exceeds 2.8 V, the maximum

voltage of the cathode of D2 is clamped at this voltage,

clamping V_FB*. Therefore, the peak value of the current

through the SenseFET is limited.

t_F

V_Sync

0.7V

0.1V

200ns Delay

MOSFET

Gate

ON

Figure 15. Valley Switching Waveforms

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

9

most applications. This protection is implemented in

auto-restart mode.

4. Protection Circuits: The FSQ510 has two self-

protective functions, overload protection (OLP) and

thermal shutdown (TSD). The protections are

implemented as auto-restart mode. Once the fault

condition is detected, switching is terminated and the

SenseFET remains off. This causes V_CCto fall. When

V_FB

Overload Protection

4.7V

V

_CCfalls down to the under-voltage lockout (UVLO) stop

voltage of 6.7 V, the protection is reset and the startup

circuit charges the V_CCcapacitor. When V_CCreaches

the start voltage of 8.7 V, the FSQ510 resumes normal

operation. If the fault condition is not removed, the

SenseFET remains off and V_CCdrops to stop voltage

again. In this manner, the auto-restart can alternately

enable and disable the switching of the power

SenseFET until the fault condition is eliminated.

Because these protection circuits are fully integrated

into the IC without external components, reliability is

improved without increasing cost.

2.8V

t₁₂= C_B•(4.7-2.8)/I_delay

t₁

Figure 17. Overload Protection

t₂

t

Fault

occurs

Fault

removed

Power

on

V_ds

4.2 Thermal Shutdown (TSD): The SenseFET and the

control IC on a die in one package make it easy for the

control IC to detect the abnormal over temperature of

the SenseFET. If the temperature exceeds

approximately 140°C, the thermal shutdown triggers

and the FPS stops operation. The FPS operates in

auto-restart mode until the temperature decreases to

around 80°C, when normal operation resumes.

V_CC

5. Soft-Start: The FPS has an internal soft-start circuit

that increases the VS-PWM comparator inverting input

voltage, together with the SenseFET current, slowly

after it starts up. The typical soft-start time is 5 ms. The

pulse width to the power switching device is

progressively increased to establish the correct working

conditions for transformers, inductors, and capacitors.

The voltage on the output capacitors is progressively

increased with the intention of smoothly establishing the

required output voltage. This helps prevent transformer

saturation and reduces stress on the secondary diode

during startup.

8.7V

6.7V

t

Normal

operation

Fault

situation

Normal

operation

Figure 16. Auto Restart Protection Waveforms

4.1 Overload Protection (OLP): Overload is defined as

the load current exceeding its normal level due to an

unexpected event. In this situation, the protection circuit

should trigger to protect the SMPS. However, even

when the SMPS is in the normal operation, the overload

protection circuit can be triggered during the load

transition. To avoid this undesired operation, the

overload protection circuit is designed to trigger only

after a specified time to determine whether it is a

transient situation or a true overload situation. Because

of the pulse-by-pulse current limit capability, the

maximum peak current through the SenseFET is limited

and, therefore, the maximum input power is restricted

with a given input voltage. If the output consumes more

than this maximum power, the output voltage (V_o)

decreases below the set voltage. This reduces the

current through the opto-coupler LED, which also

reduces the opto-coupler transistor current, increasing

the feedback voltage (V_FB). If V_FBexceeds 2.8 V, D1 is

blocked and the 5 µA current source starts to charge C_B

slowly up_.In this condition, V_FBcontinues increasing

until it reaches 4.7 V, when the switching operation is

terminated, as shown in Figure 17. The delay time for

shutdown is the time required to charge C_Bfrom 2.8 V

to 4.7 V with 5 µA. A 20 ~ 50 ms delay time is typical for

6. Burst-Mode Operation: To minimize power

dissipation in standby mode, the FPS enters burst-

mode operation. As the load decreases, the feedback

voltage decreases. As shown in Figure 18, the device

automatically enters burst mode when the feedback

voltage drops below V_BURL(750 mV). At this point,

switching stops and the output voltages start to drop at

a rate dependent on standby current load. This causes

the feedback voltage to rise. Once it passes V_BURH

(850 mV), switching resumes. The feedback voltage

then falls and the process repeats. Burst mode

alternately enables and disables switching of the

SenseFET, reducing switching loss in standby mode.

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

10

Once the SenseFET is enabled, the next start is

prohibited during the blanking time (t_B). After the

blanking time, the controller finds the first valley within

the duration of the valley detection window time (t_W)

(case A, B, and C). If no valley is found in t_W, the

internal SenseFET is forced to turn on at the end of t_W

(case D). Therefore, FSQ510 has minimum switching

frequency of 94.3 kHz and maximum switching

frequency of 132 kHz, typically, as shown in Figure 20.

Vo

Vo^set

V_FB

0.85V

0.75V

T_s^max=10.6µs

I_DS

I_ds

A

B

t_B=7.6µs

T_{s_A}

I_DS

V_ds

t_B=7.6µs

T_{s_B}

time

Switching

disabled

Switching

disabled

t₁

t₂t₃

t₄

I_DS

Figure 18. Burst-Mode Operation

7. Advanced Valley Switching Operation: To

C

t_B=7.6µs

T_{s_C}

minimize switching loss and Electromagnetic

Interference (EMI), the MOSFET turns on when the

drain voltage reaches its minimum value in VS

converters. Due to the Discontinuous Conduction Mode

(DCM) operation, the feedback voltage is not changed,

despite the DC link voltage ripples, if the load condition

is not changed. Since the slope of the drain current is

changed depending on the DC link voltage, the turn-on

duration of MOSFET is variable with the DC link voltage

ripples. The switching period is changed continuously

with the DC link voltage ripples. Not only the switching

at the instant of the minimum drain voltage, but also the

continuous change of the switching period, reduces

EMI. V_Sconverters inherently scatter the EMI spectrum.

I_DS

D

t_B=7.6µs

t_W=3µs

T_s^max=10.6µs

Figure 19. Advanced VS Operation

Typical products for VSC turn the MOSFET on when the

first valley is detected. In this case, the range of the

switching frequency is very wide as a result of the load

When the resonant period is 2µs

132kHz

C

Con stant

frequency

A

B

variations. At

a very light-load, for example, the

104kHz

94.3kHz

switching frequency can be as high as several hundred

kHz. Some products for VSC, such as Fairchild’s

FSCQ-series, define the turn-on instant of SenseFET

change at the first valley into at the second valley, when

the load condition decreases under its predetermined

level. The range of switching frequency narrows

somewhat. For details, consult an FSCQ-series

datasheet, such as:

D

Burst

mode

http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html

The range of the switching frequency can be limited

tightly in FSQ-series. Because a kind of blanking time

(t_B) is adopted, as shown in Figure 19, the switching

frequency has minimum and maximum values.

P_o

Figure 20. Switching Frequency Range of the

Advanced Valley Switching

FSQ510 / FSQ510MX • Rev. 1.4.0

www.fairchildsemi.com

11

10.00

9.10

A

B

7.62

0.56

0.36

2.54

2.00

10.70

1.252

7

5

6.60 9.90

6.20 9.30

6.70

1

4

1.09

0.94

0.56

0.10

1.784

1.62

1.47

M

0.10

C B A

0.56

0.36

M

C B A

LAND PATTERN RECOMMENDATION

TOP VIEW

7.62

A

3.60

3.20

3.70 MAX

0.10 C

2.54

7.62

0.35

0.20

C

0.10 MIN

SIDE VIEW

FRONT VIEW

NOTES: UNLESS OTHERWISE SPECIFIED

A. NO INDUSTRY STANDARD APPLIES TO

THIS PACKAGE

9°

R0.20

B. ALL DIMENSIONS ARE IN MILLIMETERS

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSIONS

D. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M-2009

GAGE PLANE

0.25

8°

0°

E. DRAWING FILENAME: MKT-MLSOP07Arev2

1.12

0.72

SEATING

PLANE

3°

1.60 REF

DETAIL A

SCALE 2:1

10.00

9.10

7

5

6.60

6.20

1

4

0.56

TOP VIEW

7.62

3.60

3.20

5.08 MAX

3.60

3.00

0.35

0.20

0.33 MIN

15°

0°

1.62

1.42

0.56

0.36

9.91

7.62

2.54

7.62

FRONT VIEW

SIDE VIEW

NOTES: UNLESS OTHERWISE SPECIFIED

A. THIS PACKAGE COMPLIES TO JEDEC MS-001,

VARIATION BA, EXCEPT FOR TERMINAL COUNT

(7 RATHER THAN 8)

B. ALL DIMENSIONS ARE IN MILLIMETERS

C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD

FLASH, AND TIE BAR PROTRUSIONS.

D. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M-2009

E. DRAWING FILENAME: MKT-NA07BArev3

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1


型号：	FSQ510
厂家：	ONSEMI
描述：	包含谷底开关控制的 700 V 集成电源开关，用于 6 W 离线反激式转换器开关电源开关光电二极管转换器
文件：	总15页 (文件大小：646K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSQ510 [ONSEMI]

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