FSTU32160MTDX [ONSEMI]
具有 -2V 欠冲保护的 16 位至 32 位复用器/解复用器总线开关;
| 型号： | FSTU32160MTDX |
| 厂家： | 
ONSEMI |
| 描述： | 具有 -2V 欠冲保护的 16 位至 32 位复用器/解复用器总线开关 开关 复用器 解复用器 |
| 文件： | 总7页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
16-Bit to 32-Bit Multiplexer/
Demultiplexer Bus Switch
with -2 V Undershoot
Protection
FSTU32160
www.onsemi.com
General Description
The ON Semiconductor Switch FSTU32160 is a 16−bit to 32−bit
highspeed CMOS TTL−compatible multiplexer/demultiplexer bus
switch. The low on resistance of the switch allows inputs to be
connected to outputs without adding propagation delay or generating
additional ground bounce noise.
TSSOP56 14x6.1
CASE 948BR
CONNECTION DIAGRAM
The device can be used in applications where two buses need to be
addressed simultaneously. The FSTU32160 is designed so that the A
Port demultiplexes into B or B or both. The A and B Ports have
1
2
“undershoot hardened” circuit protection to support an extended range
to 2.0 V below ground. The integrated Undershoot Hardened Circuit
senses undershoot at the I/O’s, and responds by preventing voltage
differentials from developing and turning on the switch.
Two select (S , S ) inputs provide switch enable control. When S ,
1
2
1
S are HIGH, the device precharges the B Port to a selectable bias
2
voltage (Bias V) to minimize live insertion noise.
Features
• Undershoot hardened to −2 V (A and B Ports)
• Slower Output Enable Times prevent Signal Disruption
• 4 W Switch Connection between Two Ports
• Minimal Propagation Delay through the Switch
• Low I
CC
• Zero Bounce in Flow−through Mode
• Control Inputs Compatible with TTL Level
• See Application Note AN−5008 for Details
• This Device is Pb−Free and is RoHS Compliant
PIN DESCRIPTIONS
Pin Name
Description
Select Inputs
Bus A
S , S
1
2
A
B , B
Bus B
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
TRUTH TABLE
Inputs
S
1
S
2
Function
L
H
x A = x B
1
2
H
L
L
L
x A = x B
x A = x B and x B
1
2
H
H
x B , x B = BiasV
1 2
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2019 − Rev. 1
FSTU32160/D
FSTU32160
Figure 1. Logic Diagram
Symbol
ABSOLUTE MAXIMUM RATINGS
Parameter
Conditions
Note 1
Rating
−0.5 to 7.0
−2.0 to 7.0
−0.5 to 7.0
−0.5 to 7.0
−50
Units
V
Supply Voltage
V
CC
DC Switch Voltage
V
S
V
BiasV Voltage Range
DC Input Control Pin Voltage
DC Input Diode Current
DC Output Current
V
V
IN
Note 2
V
I
IK
V
IN
< 0 V
mA
mA
mA
°C
I
128
OUT
DC V /GND Current
I
/I
100
CC
CC GND
Storage Temperature Range
T
STG
−65 to 150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V is the voltage observed/applied at either the A or B Ports across the switch.
S
2. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed.
RECOMMENDED OPERATING CONDITIONS (Note 3)
Parameter
Symbol
Conditions
Rating
Units
V
Power Supply Operating
Precharge Supply
Input Voltage
V
CC
4.0 to 5.5
BiasV
1.5 to V
V
CC
V
IN
0 to 5.5
0 to 5.5
0 to 5
V
Output Voltage
V
OUT
V
Input Rise and Fall Time
t /t
Switch Control Input
Switch I/O
ns/V
r
f
0 to DC
−40 to 85
Free Air Operating Temperature
T
A
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. Unused control inputs must be held HIGH or LOW. They may not float.
ORDERING INFORMATION
†
Part Number
Package
Shipping
FSTU32160MTDX
TSSOP56 14x6.1, JEDEC MO−153, 6.1 mm Wide
(Pb−Free)
1000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
2
FSTU32160
DC ELECTRICAL CHARACTERISTICS
T = −40 5C to +85 5C
A
V
(V)
Min
Typ (Note 4)
Max
Symbol
Parameter
Clamp Diode Voltage
HIGH Level Input Voltage
LOW Level Input Voltage
Input Leakage Current
Units
V
Conditions
= −18 mA
CC
V
IK
4.5
−1.2
I
IN
V
IH
4.0–5.5
4.0–5.5
5.5
2.0
V
V
IL
0.8
1.0
10
V
I
I
mA
mA
mA
0 ≤ V ≤ 5.5 V
IN
0
V
= 5.5 V
IN
I
O
Output Current
4.5
0.25
BiasV = 2.4 V, S = 2.0 V
X
B = 0
X
I
I
, I
OFF−STATE Leakage Current
OFF−STATE Leakage Current
5.5
5.5
1.0
1.0
mA
mA
0 ≤ A, ≤ V , V
OZH OZL
CC
BiasV = BiasV = 5.5 V
1
2
, I
0 ≤ B, ≤ V , V
OZH OZL
CC
BiasV = BiasV = FLOATING
1
2
4.5
4.5
4.5
4.0
5.5
5.5
4
4
7
7
W
W
V
V
V
V
V
= 0 V, I = 64 mA
IN
IN
IN
IN
IN
IN
Switch On Resistance (Note 5)
R
ON
= 0 V, I = 30 mA
IN
8
14
20
3
W
= 2.4 V, I = 15 mA
IN
11
W
= 2.4 V, I = 15 mA
IN
I
Quiescent Supply Current
mA
mA
= V or GND, I
= 0
CC
CC
OUT
Δ I
Increase in I per Input
2.5
One input at 3.4 V
Other inputs at V or GND
CC
CC
CC
I
Bias Pin Leakage Current
Voltage Undershoot
5.5
5.5
1.0
mA
S , S = 0 V
1 2
BIAS
B = 0 V, BiasV = 5.5 V
X
X
V
−2.0
V
0.0 mA ≥ I ≥ −50 mA
IN
IKU
S , S = 5.5 V
1
2
4. Typical values are at V = 5.0 V and T = +25_C
CC
A
5. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower
of the voltages on the two (A or B) pins.
AC ELECTRICAL CHARACTERISTICS
T
= −40 5C to +85 5C,
A
C = 50 pF, RU = RD = 500 W
L
V
CC
= 4.5 − 5.5 V
V
CC
= 4.0 V
Min
Max
Min
Max
Symbol
, t
Parameter
Units
Conditions
V = OPEN
Figure No.
Figures 4, 5
Figures 4, 5
t
A or B, to B or A (Note 6)
0.25
0.25
35.0
35.0
7.3
ns
PHL PLH
I
t
Output Enable Time,
S to A, B
V = OPEN for t
PZH
I
PZH
7.0
7.0
1.0
1.0
30.0
30.0
6.9
ns
ns
ns
ns
BiasV = GND
t
Output Enable Time,
S to A, B
V = 7 V for t
PZL
I
PZL
Figures 4, 5
Figures 4, 5
Figures 4, 5
BiasV = 3 V
t
Output Disable Time,
S to A, B
V = OPEN for t
PHZ
I
PHZ
BiasV = GND
t
Output Disable Time,
S to A, B
V = 7 V for t
PLZ
I
PLZ
7.7
7.7
BiasV = 3 V
6. This parameter is guaranteed by design but is not tested. The bus switch contributes no propagation delay other than the RC delay of the
typical On resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
www.onsemi.com
3
FSTU32160
CAPACITANCE (Note 7)
Symbol
Parameter
Typ
4
Max
Units
pF
Conditions
= 5.0 V
C
IN
Control pin Input Capacitance
V
V
CC
C
I/O OFF
Input/Output Capacitance “OFF State”
8
pF
= 5.0 V, Switch OFF
CC
7. T = +25_C, f = 1 MHz, Capacitance is characterized but not tested.
A
UNDERSHOOT CHARACTERISTIC (Note 8)
Symbol
Parameter
Min
Typ
− 0.3
Max
Units
Conditions
VOUTU
Output Voltage During Undershoot
2.5
V
V
Figure 2
OH
8. This test is intended to characterize the device’s protective capabilities by maintaining output signal integrity during an input transient voltage
undershoot event.
Figure 2.
DEVICE TEST CONDITIONS
Parameter
Value
see Waveform
100K
Units
V
IN
V
W
V
V
R = R
1
2
V
TRI
11.0
Figure 3. Transient Input Voltage (VIN) Waveform
V
CC
5.5
www.onsemi.com
4
FSTU32160
AC Loading and Waveforms
Notes:
Input driven by 50 W source terminated in 50 W.
C includes load and stray capacitance, C = 50 pF
L
L
Input PRR = 1.0 MHz, t = 500 ns
W
Figure 4. AC Test Circuit
Figure 5. AC Waveforms
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP56 14x6.1
CASE 948BR
ISSUE O
DATE 30 SEP 2016
A
51
34
29
56
B
8.10
4.05
0.2 C B A
1
6
23
28
0.30
0.50
0.1 C
−C−
0.50
0.10
A B
C
0.25
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13776G
TSSOP56 14X6.1
PAGE 1 OF 1
ON Semiconductor and
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相关型号：
FSTU32160_06
16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch with −2V Undershoot Protection
FAIRCHILD
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