FSV1060V [ONSEMI]
10 A，60 V 超低 VF 肖特基整流器;
| 型号： | FSV1060V |
| 厂家： | 
ONSEMI |
| 描述： | 10 A，60 V 超低 VF 肖特基整流器 光电二极管 |
| 文件： | 总6页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Rectifier
10 A, 60 V Ultra−Low VF
FSV1060V
Description
The FSV1060V schottky rectifier offers break−through size and
performance. The device is optimized for mobile charger applications.
It sinks only 13 mA reverse current at high temperature and provides
forward voltage drop of 0.2 V at 1 A operating current in a charger
design.
All this capability is packed into a small, flat−lead, TO−277
package, optimized for space−constrained applications. The
FSV1060V supports a typical Z height of 1.1 mm. It is RoHS
compliant and halogen free. It is also qualified for a wave soldering
process.
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Anode 1
Anode 2
3. Cathode
Schottky Rectifier
3
Features
• Ultra−Low Forward Voltage Drop:
♦ 0.47 V Typical at 10 A, T = 25°C
A
2
1
♦ 0.52 V Maximum at 10 A, T = 25°C
A
• Low Thermal Resistance
TO−277−3LD
CASE 340BQ
• Very Low Profile: Typical Height of 1.1 mm
• Meets MSL 1 per JESD22−A111 Full−Body Solder Immersion
• Non−DAP Option Only
MARKING DIAGRAM
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
$Y&Z&3
Applications
FSV1060V
• Mobile Charger
• Solar Panel
• Reverse Polarity Protection
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
FSV1060V = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2020 − Rev. 1
FSV1060V/D
FSV1060V
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)
A
Symbol
Parameter
Peak Repetitive Reverse Voltage
Value
Unit
V
V
60
RRM
RWM
V
Working Peak Reverse Voltage
RMS Reverse Voltage
60
V
V
RMS
42
60
V
V
I
DC Blocking Voltage
V
R
Average Rectified Output Current at T = 90°C (Note 2)
10
A
O
L
I
Non−Repetitive Peak Forward Surge Current (Note 3)
280
A
FSM
C
T
Typical Junction Capacitance, V = 4 V, 1 MHz
550
pF
°C
°C
J
R
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. All test conducted at T = T = 25°C unless otherwise noted.
A
J
2. Mounted on 30 mm x 30 mm FR4 PCB.
3. Pulse condition: 8.3 ms single half−sine wave. Test method is compliant with MIL standard (MIL−STD−750E).
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)
A
Minimum Land
Pattern
Maximum Land
Pattern
Symbol
Characteristic
Unit
°C/W
°C/W
R
Junction−to−Ambient Thermal Resistance
105
18
38
q
JA
Ψ
JL
Junction−to−Lead Thermal Characteristics,
Thermocouple Soldered to Anode
13
Junction−to−Lead Thermal Characteristics,
Thermocouple Soldered to Cathode
8
5
4. The thermal resistances (R
&Ψ ) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1
JL
q
JA
and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2).
Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils.
F
S
F
S
F
S
F
F
S
S
Figure 1. Minimum Land Pattern of 2 oz Copper
Figure 2. Maximum Land Pattern of 2 oz Copper
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2
FSV1060V
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
BV
Parameter
Breakdown Voltage
Conditions
Min
60
−
Typ
−
Max
Unit
V
I = 500 mA
−
−
R
T
V
F
Forward Voltage Drop
I = 1 A
F
0.30
0.47
0.20
0.46
0.056
13
V
I = 10 A
F
−
0.52
−
I = 1 A, T = 125°C
−
F
A
I = 10 A, T = 125°C
−
−
F
A
I
R
Maximum Leakage
V = V
−
0.220
−
mA
RWM
V = V
, T = 125°C
A
−
RWM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
FSV1060V
FSV1060V
TO−277−3LD
(Pb−Free/Halogen Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FSV1060V
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
100000
10000
T
A = 150oC
1000
TA=150oC
TA=125oC
T
A = 125oC
TA=85oC
100
o
T
A = −55C
0.1
10
1
TA=25oC
TA = 85oC
TA = 25oC
0.1
0.01
0.001
0.01
o
TA=−55 C
1E−3
10 15 20 25 30 35 40 45 50 55 60
Reverse Voltage, VR[V]
0.0
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF [V]
Figure 3. Forward Current Characteristics
Figure 4. Typical Reverse Characteristics
12
10000
Yjl (30mm x 30mm Pad)
10
8
Yjl (Min. Pad)
1000
6
4
qja (30mm x 30mm Pad)
2
qja (Min. Pad)
100
0
1
10
100
0
25
50
75
100
125
150
175
Reverse Voltage, VR[V]
Ambient / Lead Temperature, [oC]
Figure 5. Typical Junction Capacitance
Figure 6. Forward Current Derating Curve
300
250
200
150
100
50
0
0
20
40
60
80
100
Number of Cycles
Figure 7. Surge Current Derating Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−277−3LD
CASE 340BQ
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13861G
TO−277−3LD
PAGE 1 OF 1
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