FSV530AF [ONSEMI]
肖特基势垒整流器;
| 型号： | FSV530AF |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒整流器 光电二极管 |
| 文件： | 总5页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSV530AF
Schottky Barrier Rectifier
Features
• Low Forward Voltage Drop: 0.54 V Maximum at 5 A, T = 25°C
A
• Ultra Thin Profile − Maximum Height of 1.0 mm
• High Surge Capacity
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• UL Flammability 94V−0 Classification
• MSL 1
1
2
• Green Mold Compound
Cathode
Anode
• These Devices are Pb−Free, Halogen Free Free and are RoHS
Schottky Barrier Rectifier
Compliant
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Recurrent Peak Reverse Voltage
RMS Reverse Voltage
Value
30
Unit
V
DO−214AD
(SMAF)
CASE 403AD
V
RRM
V
RMS
21
V
MARKING DIAGRAM
V
R
DC Blocking Voltage
30
V
I
Average Forward Current
5
A
F(AV)
$Y&Z&3
FSV530AF
I
Peak Forward Surge Current: 8.3 ms
Single Half Sine−Wave Superimposed
on Rated Load (JEDEC Method)
100
A
FSM
Band Indicates Cathode
T
J
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FSV530AF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2018 − Rev. 2
FSV530AF/D
FSV530AF
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1)
A
Symbol
Characteristic
Typical Thermal Characteristics, Junction−to−Lead (Note 2)
Typical Thermal Resistance, Junction−to−Ambient
Value
15
Unit
°C/W
°C/W
Ψ
JL
R
120
q
JA
1. Per JESD51−3 recommended thermal test board. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm.
2. Thermocouple soldered at cathode lead.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Forward Voltage
Conditions
Min
−
Typ
−
Max
0.54
100
−
Unit
V
F
I = 5 A
V
F
I
R
Reverse Current
V
R
= 30 V
−
−
mA
ns
pF
Trr
Reverse Recovery Time
Junction Capacitance
I = 0.5 A, I = 1 A, I = 0.25 A
−
15.72
159
F
R
rr
C
V
R
= 0 V, f = 1 MHz
−
−
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
FSV530AF
FSV530AF
DO−214AD (SMAF)
(Pb−Free/Halogen Free)
10000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FSV530AF
TYPICAL PERFORMANCE CHARACTERISTICS
100
6
5
T = 150°C
J
10
1
T = 125°C
J
4
3
2
T = 75°C
J
0.1
20 ~ 45 V
0.01
0.001
1
0
T = 25°C
J
0
25
50
75
100
125
150
10
15
20
25
30
35
40
45
T , Case Temperature (5C)
C
V , Peak Reverse Voltage (V)
R
Figure 1. Forward Current Derating Curve
Figure 2. Typical Reverse Characteristics
800
600
10
T = 150°C
J
T = 125°C
J
1
0.1
400
200
0
T = 75°C
J
T = 25°C
J
20 ~ 45 V
0.01
0
0.2
0.4
0.6
0
10
20
30
40
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 3. Typical Forward Characteristics
Figure 4. Typical Junction Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA−FL
CASE 403AD
ISSUE A
DATE 14 JUL 2020
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13439G
SMA−FL
PAGE 1 OF 1
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