FW217A-TL-2W [ONSEMI]
N 沟道，功率 MOSFET，35V，6A，39mΩ;
| 型号： | FW217A-TL-2W |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，35V，6A，39mΩ |
| 文件： | 总7页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8994B
FW217A
N-Channel Power MOSFET
http://onsemi.com
Ω
35V, 6A, 39m , Dual SOIC8
Features
•
On-state resistance R (on)1=30m (typ.)
Ω
DS
•
•
•
4.5V drive
Halogen free compliance
Protection Diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
35
DSS
V
±20
V
GSS
I
6
A
D
Drain Current (PW 10s)
I
DP
Duty cycle 1%
6.5
A
≤
≤
Drain Current (PW 10 s)
I
Duty cycle 1%
When mounted on ceramic substrate (2000mm2 0.8mm) 1unit, PW 10s
When mounted on ceramic substrate (2000mm2 0.8mm), PW 10s
24
1.8
A
≤
μ
≤
DP
Allowable Power Dissipation
Total Dissipation
P
P
W
W
°C
°C
×
≤
D
T
2.2
×
≤
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SOIC8
7072-001
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW217A-TL-2W
4.9
0.22
Packing Type : TL
Marking
8
5
FW217
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
LOT No.
A
1
4
1.27
0.254 (GAGE PLANE)
0.445
Electrical Connection
8
7
6
5
SOIC8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7
FW217A
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
35
(BR)DSS
D
GS
I
V
=35V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.7
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =6A
D
3
S
|
DS
R
R
(on)1
(on)2
=6A, V =10V
GS
30
50
470
70
35
8
39
70
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=3A, V =4.5V
GS
m
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
34
31
30
10
2
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=20V, V =10V, I =6A
GS
DS
D
2
V
I =6A, V =0V
S GS
0.84
1.2
SD
Switching Time Test Circuit
V =20V
DD
V
IN
10V
0V
I
=6A
D
V
IN
R =3Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
FW217A
P. G
50Ω
S
Ordering Information
Device
Package
SOIC8
Shipping
2,500pcs./reel
memo
FW217A-TL-2W
Pb Free and Halogen Free
No.8994-2/7
FW217A
I
D
-- V
DS
I
-- V
D GS
6
5
4
3
2
10
9
V
DS
=10V
8
7
6
5
4
3
2
1
0
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Drain-to-Source Voltage, V
-- V
IT16778
Gate-to-Source Voltage, V
GS
-- V
IT16779
DS
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
100
100
80
Ta=25°C
I =3A
D
80
60
40
6A
60
40
20
0
20
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT16780
Ambient Temperature, Ta -- °C
IT16781
GS
| yfs | -- I
I
-- V
D
S SD
10
10
7
V
=10V
V
=0V
DS
7
5
GS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16783
0.1
1.0
Drain Current, I -- A
IT16784
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
100
V
=20V
f=1MHz
DD
7
5
7
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
10
1.0
0.1
0
5
10
15
20
25
30
35
IT16785
2
3
5
7
2
3
5
7
1.0
10
IT16784
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No.8994-3/7
FW217A
V
GS
-- Qg
A S O
10
9
100
7
V
=10V
DS
=4.5A
5
I
D
I
=24A(PW≤10μs)
3
2
DP
8
10
7
5
I =6A
D
7
3
2
6
5
1.0
7
5
4
3
2
Operation in this
area is limited by R (on).
3
DS
0.1
7
5
2
Ta=25°C
Single pulse
3
2
1
0
1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
0.01
0
2
4
6
8
10
IT16786
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
100
IT16787
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
(FET1) -- P (FET2)
D D
D
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.4
When mounted on ceramic substrate
(2000mm2×0.8mm), PW
10s
When mounted on ceramic substrate
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
(2000mm2×0.8mm), PW
≤
10s
≤
0.2
0
0.2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
2.4
0
25
50
75
100
125
150
175
IT16789
Ambient Temperature, Ta -- °C
Allowable Power Dissipation(FET2), P -- W IT16790
D
Taping Specification
FW217A-TL-2W
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No.8994-4/7
FW217A
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No.8994-5/7
FW217A
Outline Drawing
Land Pattern Example
FW217A-TL-2W
Mass (g) Unit
Unit: mm
0.082
mm
* For reference
0.65
1.27
No.8994-6/7
FW217A
Note on usage : Since the FW217A is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.8994-7/7
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