FW4604 [ONSEMI]
Complementary Dual Power MOSFET;
| 型号： | FW4604 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Dual Power MOSFET |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0273B
FW4604
Power MOSFET
http://onsemi.com
–
–
Ω
Ω
30V, 6A, 39m , 30V, 4.5A, 65m , Complementary Dual SOIC8
Features
•
On-state resistance Nch : R (on)1=30m (typ.)
Ω
DS
Pch : R (on)1=50m (typ.)
Ω
DS
•
•
•
•
4.5V drive
Halogen free compliance
Nch + Pch MOSFET
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
P-channel
--30
Unit
V
V
30
±20
6
DSS
V
±20
V
GSS
I
--4.5
--5
A
D
Drain Current (PW 10s)
I
Duty cycle 1%
6.5
24
A
≤
≤
DP
Drain Current (PW 10 s)
I
Duty cycle 1%
--18
A
≤
μ
≤
DP
Allowable Power Dissipation
Total Dissipation
P
P
When mounted on ceramic substrate (2000mm2 0.8mm) 1unit, PW 10s
When mounted on ceramic substrate (2000mm2 0.8mm), PW 10s
1.8
2.2
W
W
°C
°C
×
≤
D
T
×
≤
Channel Temperature
Storage Temperature
Tch
150
--55 to +150
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SOIC8
7072-001
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
4.9
FW4604-TL-2W
0.22
8
5
Packing Type : TL
Marking
W4604
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
LOT No.
1
4
1.27
0.254 (GAGE PLANE)
0.445
Electrical Connection
8
7
6
5
SOIC8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM/61312 TKIM/12512PA TKIM TC-00002681 No. A0273-1/7
FW4604
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.7
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =6A
D
3
S
|
DS
R
R
(on)1
(on)2
=6A, V =10V
GS
30
50
39
70
m
Ω
Ω
DS
DS
D
Static Drain to Source On-State Resistance
I
D
=3A, V =4.5V
GS
m
Input Capacitance
Ciss
490
85
pF
Output Capacitance
Coss
Crss
V
=10V, f=1MHz
pF
pF
ns
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
45
t
t
t
t
(on)
8
d
r
45
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
31
ns
d
f
28
ns
Total Gate Charge
Qg
9.1
1.7
1.7
0.84
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=15V, V =10V, I =6A
GS
DS
D
V
SD
I =6A, V =0V
S GS
1.2
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--30
V
(BR)DSS
D GS
I
V
=--30V, V =0V
--1
±10
A
A
μ
DSS
DS
GS
I
V
=±16V, V =0V
GS DS
μ
GSS
V
(off)
|
V
=--10V, I =--1mA
DS D
--1.7
--2.6
V
GS
yfs
Forward Transfer Admittance
V
I
=--10V, I =--4.5A
D
5.2
50
S
|
DS
R
R
(on)1
(on)2
=--4.5A, V =--10V
GS
65
m
Ω
DS
DS
D
Static Drain to Source On-State Resistance
I
D
=--2.5A, V =--4.5V
GS
85
119
m
Ω
Input Capacitance
Ciss
430
105
75
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
7.5
42
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
43
ns
d
f
40
ns
Total Gate Charge
Qg
10
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--4.5A
2.0
2.5
--0.86
DS
GS
D
V
SD
I =--4.5A, V =0V
S GS
--1.5
Switching Time Test Circuit
[N-channel]
[P-channel]
V =15V
DD
V = --15V
DD
V
IN
V
IN
10V
0V
0V
--10V
I
=6A
I = --4.5A
D
R =3.3Ω
L
D
V
IN
V
IN
R =2.5Ω
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
FW4604
FW4604
P. G
P. G
50Ω
50Ω
S
S
Ordering Information
Device
Package
SOIC8
Shipping
memo
Pb-Free and Halogen Free
FW4604-TL-2W
2,500pcs./reel
No. A0273-2/7
FW4604
[Nch]
[Nch]
=10V
I
D
-- V
DS
I
-- V
D GS
6
5
4
3
2
10
9
V
DS
8
7
6
5
4
3
2
1
0
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Drain to Source Voltage, V
-- V
IT16716
Gate to Source Voltage, V
GS
-- V
IT16717
DS
R
(on) -- V
GS
R
(on) -- Ta
[Nch]
[Nch]
DS
DS
100
80
100
80
Ta=25°C
I
=3A
D
6A
60
60
40
40
20
0
20
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate to Source Voltage, V
-- V
IT16718
Ambient Temperature, Ta -- °C
IT16719
GS
[Nch]
=10V
[Nch]
| yfs | -- I
I
-- V
D
S SD
10
7
5
10
7
V
V
=0V
DS
GS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
5
7
2
3
5
7
2
3
5
7
10
0.1
1.0
Drain Current, I -- A
D
Diode Forward Voltage, V
Ciss, Coss, Crss -- V
-- V
SD
IT16720
IT16721
SW Time -- I
[Nch]
[Nch]
D
DS
100
1000
f=1MHz
7
5
7
Ciss
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
V
=15V
DD
V
=10V
GS
10
1.0
0.1
2
3
5
7
2
3
5
7
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
1.0
10
Drain Current, I -- A
IT16722
IT16723
Drain to Source Voltage, V
DS
-- V
D
No. A0273-3/7
FW4604
V
GS
-- Qg
[Nch]
A S O
[Nch]
100
10
9
7
V
=15V
=6A
DS
5
I
D
I
=24A (PW
DP
≤10μs)
3
2
8
10
7
5
I =6A
D
1ms
7
3
2
6
5
1.0
7
5
4
3
2
Operation in this
area is limited by R (on).
3
DS
0.1
7
5
2
Ta=25°C
3
2
1
0
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm)
0.01
0.01
0
2
4
6
8
10
IT16724
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
100
0.1
1.0
10
Total Gate Charge, Qg -- nC
Drain to Source Voltage, V -- V
DS
IT16725
I
D
-- V
DS
[Pch]
I
-- V
[Pch]
D GS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--8
V
DS
= --10V
--7
--6
--5
--4
--3
--2
--1
0
--0.5
0
V
= --2.5V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--1
--2
--3
--4
--5
Drain to Source Voltage, V
-- V
Gate to Source Voltage, V
GS
-- V
IT16727
IT16726
DS
R
(on) -- V
GS
[Pch]
R
(on) -- Ta
[Pch]
DS
DS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
Ta=25°C
I
= --2.5A
D
--4.5A
60
60
40
40
20
0
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate to Source Voltage, V
-- V
IT16728
Ambient Temperature, Ta -- °C
IT16729
[Pch]
=0V
GS
| yfs | -- I
[Pch]
I
-- V
D
S SD
--10
10
7
V
V
= --10V
7
5
GS
DS
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5 7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT16731
--0.01
--0.1
--1.0
--10
Drain Current, I -- A
IT16730
Diode Forward Voltage, V
-- V
SD
D
No. A0273-4/7
FW4604
SW Time -- I
Ciss, Coss, Crss -- V
[Pch]
[Pch]
D
DS
1000
100
f=1MHz
7
7
5
5
t
f
3
2
3
2
10
100
t
d(on)
7
5
7
5
3
2
3
2
V
V
= --15V
= --10V
DD
GS
5
1.0
--0.1
10
2
3
5
7
2
3
7
0
--5
--10
--15
--20
--25
--30
--1.0
--10
Drain Current, I -- A
IT16732
Drain to Source Voltage, V
-- V
IT16733
D
DS
V
-- Qg
[Pch]
[Pch]
A S O
GS
--10
--100
7
V
= --15V
= --4.5A
DS
5
--9
--8
--7
--6
--5
--4
--3
--2
I
D
3
2
≤10μs)
I
= --18A (PW
DP
--10
7
5
I = --4.5A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
3
2
--1
0
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm)
--0.01
--0.01
0
2
4
6
8
10
IT16734
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--100
IT16735
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
Drain to Source Voltage, V
DS
-- V
P
-- Ta
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW
10s
P
(FET1) -- P (FET2) [Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW
≤10s
D
D
D
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
≤
0.2
0
0.2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
25
50
75
100
125
150
175
IT16736
Ambient Temperature, Ta -- °C
Allowable Power Dissipation(FET2), P -- W IT16737
D
No. A0273-5/7
FW4604
Outline Drawing
Land Pattern Example
FW4604-TL-2W
Mass (g) Unit
Unit: mm
0.082
mm
* For reference
0.65
1.27
No. A0273-6/7
FW4604
Note on usage : Since the FW4604 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A0273-7/7
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