FYA3010DNTU [ONSEMI]
肖特基势垒整流器;
| 型号： | FYA3010DNTU |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒整流器 局域网 二极管 |
| 文件： | 总5页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2016
FYA3010DN
Schottky Barrier Rectifier
Features
•
•
•
Low forward voltage drop
High frequency properties and switching speed
Guard ring for over-voltage protection
Applications
•
•
Switched mode power supply
Freewheeling diodes
1. Anode 2.Cathode 3. Anode
TO-3P
Marking: Y3010DN
1 2 3
Absolute Maximum Ratings
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
100
100
30
Units
V
V
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
V
V
A
A
RRM
R
I
I
Average Rectified Forward Current
@ T = 135°C
C
F(AV)
FSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
250
T
T
Operating Junction and Storage Temperature
- 65 to +150
°C
J, STG
Thermal Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
0.78
0.48
0.2
Units
°C/W
°C/W
°C/W
R
R
R
Maximum Thermal Resistance, Junction to Case (per diode)
Maximum Thermal Resistance, Junction to Case (per PKG)
Maximum Thermal Resistance, Case to Heatsink
θJC
θJC
θJC
Electrical Characteristics (per diode) T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
Maximum Instantaneous Forward Voltage
FM *
I
I
I
I
= 15A
= 15A
= 30A
= 30A
T
T
T
T
= 25 °C
= 125 °C
= 25 °C
= 125 °C
0.85
0.67
1.05(Typ.)
0.80
V
F
F
F
F
C
C
C
C
I
Maximum Instantaneous Reverse Current
@ rated V
RM
*
T
T
= 25 °C
= 125 °C
1
20
mA
R
C
C
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2005 Fairchild Semiconductor Corporation
FYA3010DN Rev. 1.1
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Forward Voltage
Characteristics (per diode)
Figure 2. Typical Reverse Current vs.
Reverse Voltage (per diode)
100
10
1
101
TJ=125 o
C
100
10-1
10-2
10-3
TJ=75 o
TJ=25 o
C
TJ=125 o
C
TJ=75 o
C
0.1
C
TJ=25 o
C
0.01
0.0
0.5
1.0
1.5
20
40
60
80
100
Forward Voltage Drop, VF[V]
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
Figure 4. Forward Current Derating Curve
35
DC
TJ=25 oC
30
1000
900
800
700
25
20
15
10
5
600
500
400
300
200
100
90
0
80
0
20
40
60
80
100
0
20
40
60
80
100
120
140
160
Reverse Voltage, VR[V]
Case Temperature, TC[°C]
Figure 5. Non-Repetive Surge Current
(per diode)
Figure 6. Thermal Impedance Characteristics
(per diode)
300
275
250
225
200
175
150
10
1
0.1
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
1
10
100
Pulse Duration [s]
Number of Cycles @ 60Hz
©2005 Fairchild Semiconductor
Corporation FYA3010DN Rev. 1.1
2
www.fairchildsemi.com
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 40V V(RRM), Silicon, TO-3PF, 3 PIN
FAIRCHILD
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