FZT3019 [ONSEMI]
NPN中等功率晶体管;
| 型号： | FZT3019 |
| 厂家： | 
ONSEMI |
| 描述： | NPN中等功率晶体管 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2006
FZT3019
tm
NPN General Purpose Amplifier
4
Features
•
•
This device is designed for general purpose medium power amplifiers and
switches requiring collector currents to 500 mA and collector voltages up to 80 V.
3
2
Sourced from process 12.
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
80
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
V
140
7.0
V
Collector current - Continuous
1.0
A
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
= 30 mA, I = 0
80
140
7.0
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
C
C
E
B
= 100 µA, I = 0
E
= 100 µA, I = 0
Vn
C
I
V
V
= 90 V, I = 0
10
10
nA
µA
CB
CB
E
= 90 V, I = 0, T = 150°C
E
a
I
Emitter-Cutoff Current
V
= 5 V,
10
nA
EBO
EB
On Characteristics
h
DC Current Gain
I
I
I
I
I
= 0.1 mA, V = 10 V
50
90
100
50
FE
C
C
C
C
C
CE
= 10 mA, V = 10 V
CE
= 150 mA, V = 10 V
300
CE
= 500 mA, V = 10 V
CE
= 1.0 A, V = 10 V
15
CE
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
= 150 mA, I = 15 mA
0.2
0.5
V
V
CE(sat)
BE(sat)
C
C
B
= 500 mA, I = 50 mA
B
I
= 150 mA, I = 15 mA
1.1
V
C
B
Small Signal Characteristics
f
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Capacitance
I
= 50 mA, V = 10 V, f = 20 MHz
100
80
MHz
pF
T
C
CE
C
C
V
V
= 10 V, I = 0, f = 1.0 MHz
12
60
cob
ibo
CB
BE
E
= 0.5 V, I = 0, f = 1.0 MHz
pF
E
h
Small Signal current Gain
I
= 50 mA, V = 10 V,
400
fe
C
CE
f = 20 MHz
rb’Cc
NF
Collector Base Time Constant
Noise Figure
I
I
= 10 mA, V = 10 V, f = 4.0 MHz
400
4.0
pS
dB
C
CB
= 100 mA, V = 10 V,
C
CE
R
= 1.0kΩ, f = 1.0KHz
S
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation
FZT3019 Rev. B
1
www.fairchildsemi.com
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25°C
1.0
8.0
W
mW/°C
RθJA
NOTES :
*
Thermal Resistance, Junction to Ambient
125
°C/W
2
* Device mounted on FR-4 PCB 36mm × 18mm ×1.5mm, Mounting Pad for the collector lead is 600mm
2
www.fairchildsemi.com
FZT3019 Rev. B
Package Dimensions
SOT-223
3.00 0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 0.25
0.70 0.10
(0.95)
°
~10
°
0
+0.10
–0.05
(0.95)
0.25
6.50 0.20
Dimensions in Millimeters
3
www.fairchildsemi.com
FZT3019 Rev. B
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Advance Information
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Definition
Formative or In
Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner with-
out notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary
data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild Semi-
conductor reserves the right to make changes at any time
without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product that has
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
Rev. I19
4
www.fairchildsemi.com
FZT3019 Rev. B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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