GBU8B [ONSEMI]
8 A 桥式整流器;
| 型号： | GBU8B |
| 厂家： | 
ONSEMI |
| 描述： | 8 A 桥式整流器 局域网 IOT 二极管 |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Bridge Rectifiers
GBU8A - GBU8M
Features
• Glass−Passivated Junction
• Surge Overload Rating: 200 A Peak
• Reliable Low−Cost Construction Utilizing Molded Plastic Technique
• Ideal for Printed Circuit Board
• UL Certified: UL #E258596
SIP4
CASE 127EL
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Marking
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
GBU8M
Package
GBU8A
GBU 4L
Rail
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
GBU8M
MARKING DIAGRAM
RU$Y&Z&3
GBU
8A
−
~
~
+
RU
= UL Marking
$Y
&Z
&3
GBU8A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Specific Device Code
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
September, 2021 − Rev. 3
GBU8B/D
GBU8A − GBU8M
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
8G
8A
50
35
50
8B
100
70
8D
8J
8K
8M
1000
700
Symbol
Parameter
Units
V
V
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
200
140
200
400
280
400
8.0
600
420
600
800
560
800
V
V
V
A
A
A
RRM
RMS
V
R
DC Reverse Voltage (Rated V )
100
1000
R
I
Average Rectified Forward
Current
T = 100°C
A
F(AV)
T = 45°C
A
6.0
I
Non−Repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
200
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
STG
T
J
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARECTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
16
Units
W
P
D
Power Dissipation
R
Thermal Resistance per Leg, Junction to Ambient (Note 1)
Thermal Resistance per Leg, Junction to Case (Note 2)
18
°C/W
°C/W
q
JA
R
3
q
JL
1. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)
2. Heat sink mounting, 4 × 4 × 0.15 inch copper plate
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
1.0
Units
V
V
I
Forward Voltage, per Element
8.0 A
F
Reverse Current, per Element at Rated V
T = 25°C
A
5.0
mA
R
R
T = 100°C
500
166
mA
A
2
2
2
I t
I t Rating for Fusing
t < 8.35 ms
A s
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
GBU8A − GBU8M
TYPICAL PERFORMANCE CHARACTERISTICS
8
6
4
100
HEAT−SINK
MOUNTING, TC
4”x4”x0.15”
COPPER PLATE
10
1
T
= 25°C
A
Pulse Width = 300 ms
1% Duty Cycle
2
0
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OR INDUCTIVE LOAD
0.1
0.7
0
50
100
150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Ambient Temperature (5C)
V , Forward Voltage (V)
F
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
10
250
T
= 100°C
T = 150°C
J
8.3 ms Single Half Sine−Wave
C
200
150
100
1
0.1
T
= 25°C
C
50
0
0.01
0
20
40
60
80
100
120
140
1
10
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Non−Repetitive Surge Current
400
T
A
= 25°C
f = 1.0 MHz
Visg = 50m Vp−p
100
50
10
1
5
10
50
100
V , Reverse Voltage (V)
R
Figure 5. Total Capacitance
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SIP4 22.05x18.55
CASE 127EL
ISSUE O
DATE 31 DEC 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13717G
SIP4 22.05x18.55
PAGE 1 OF 1
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